Cogency of chromium ions in strengthening spectroscopic and dielectric properties of B2O3-Bi2O3-Al2O3-MgO glass materials

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
G. Krishna Priya, S. Yusub, A. Ramesh Babu, N. Sreeram, B. S. Ananda Kumar, Ravindranadh Koutavarapu, V. Aruna
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引用次数: 0

Abstract

The multi-functional glasses 65B2O3-20Bi2O3-10Al2O3-(5-x)MgO: xCr2O3 (0 ≤ x ≤ 0.5 mol%) were prepared by conventional melt quenching and heat treatment process. The samples were explored by examining X-ray diffraction (XRD), Fourier transform infrared (FTIR), Raman spectra, electron spin resonance spectra (ESR), emission spectra, optical absorption, and dielectric studies. The physical, optical, and dielectric properties of samples were investigated. The highest concentration of chromium ions is 9.845 X 1021 ions/cm3 for the glass doped with 0.5 mol% of Cr2O3. The studies on FTIR and Raman spectra reveal the structural changes in glasses by exhibiting an in increase in intensity of the bands due to BO3 units. ESR spectra of doped glasses displayed an intense resonance signal at g = 4.20 due to Cr3+ ions. The emission spectra of glasses exhibited a sharp peak centered at 740 nm due to 4T2g → 4A2g transitions of Cr3+ ions. The optical absorption spectra of glasses displayed an intense absorption band centered at 615 nm. The least values of direct and indirect optical bandgap of glasses are 2.687 and 2.364 eV, respectively. Dielectric properties were investigated on a temperature scale of 30–300 °C by varying frequencies in the range of 103–106 Hz to ascertain the suitability of glasses for various electronic and laboratory applications. The estimated maximum a.c. conductivity for a glass doped with 0.5 mol% of Cr2O3 is 5.86 X 10–6 (Ω-cm)−1. The glass doped with 0.5 mol% of Cr2O3 was perceived as the suitable material for diverse optical and dielectric applications.

铬离子在增强B2O3-Bi2O3-Al2O3-MgO玻璃材料的光谱和介电性能中的作用
采用常规熔融淬火和热处理工艺制备了65B2O3-20Bi2O3-10Al2O3-(5-x)MgO: xCr2O3(0≤x≤0.5 mol%)多功能玻璃。通过x射线衍射(XRD)、傅里叶变换红外(FTIR)、拉曼光谱、电子自旋共振光谱(ESR)、发射光谱、光吸收和介电研究对样品进行了探测。研究了样品的物理、光学和介电性能。当Cr2O3掺杂量为0.5 mol%时,玻璃中铬离子的最高浓度为9.845 × 1021个离子/cm3。红外光谱(FTIR)和拉曼光谱(Raman)的研究表明,由于BO3单元的存在,玻璃的能带强度增加,从而揭示了玻璃的结构变化。由于Cr3+离子的作用,掺杂玻璃的ESR光谱在g = 4.20处显示出强烈的共振信号。由于Cr3+离子的4T2g→4A2g跃迁,玻璃的发射光谱在740 nm处出现了一个尖峰。玻璃的光学吸收光谱显示出以615 nm为中心的强吸收带。玻璃的直接带隙最小值为2.687 eV,间接带隙最小值为2.364 eV。在温度范围为30-300°C的温度范围内,通过在103-106 Hz范围内改变频率来研究介电性能,以确定玻璃在各种电子和实验室应用中的适用性。掺入0.5 mol% Cr2O3的玻璃的最大交流电导率为5.86 X 10-6 (Ω-cm)−1。掺杂了0.5 mol% Cr2O3的玻璃被认为是适合各种光学和介电应用的材料。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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