Effect of Vanadium doping on the structural, vibrational, optical, dielectric, ferroelectric and electrical properties of Na0.5Bi0.5TiO3 ceramics

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Kasiratnam Teki, Hari Sankar Mohanty, Krishnamayee Bhoi, Subrata Karmakar, Hitesh Borkar, Soumyaranjan Mohapatra
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Abstract

In this report, we have studied the effect of Vanadium (V) substitution on the various properties such as structural, microstructural, morphological, optical and electrical properties of (Na0.5Bi0.5)Ti(1−5x/4)VxO3 (0.00 ≤ x ≤ 0.15) (NBVT) ceramics. The polycrystalline samples are synthesized using solid-state route followed by high temperature microwave sintering technique. Room temperature XRD analysis along with structural Rietveld refinement technique confirms the existence of perovskite single-phase rhombohedral structure (R3c space group) for Na0.5Bi0.5TiO3 (NBT) & NBVT. The obtained results are subsequently corroborated by Raman analysis. The FESEM image of NBVT compounds display the uniform, distinct microstructure, scattered voids and reduction in average grain size with increased V-concentration. The widening in the band gap energy of NBT ceramic is observed upon V doping. A well saturated ferroelectric hysteresis loop NBVT suggests existence of ferroelectric behavior in the material. The temperature dependent dielectric constant shows existence of ferroelectric phase transition and shifted towards low temperature side upon increase in V-concentration. A low dielectric loss at high frequencies makes the material suitable for microwave device applications. Impedance and modulus formalism analysis of electrical data revealed a dominant non-ideal bulk contribution to the compound’s overall electrical response and negative temperature coefficient of resistance (NTCR) behavior. To determine the conduction mechanism, the universal power law is used to model the frequency dependent ac conductivity data. To figure out the type of charge carriers involved in various electrical processes, activation energies are calculated from temperature dependent impedance data.

钒掺杂对Na0.5Bi0.5TiO3陶瓷结构、振动、光学、介电、铁电及电学性能的影响
本文研究了钒(V)取代对(Na0.5Bi0.5)Ti(1−5x/4)VxO3(0.00≤x≤0.15)(NBVT)陶瓷的结构、微观结构、形貌、光学和电学等性能的影响。采用固态法和高温微波烧结技术合成了多晶样品。室温XRD分析和结构Rietveld细化技术证实了Na0.5Bi0.5TiO3 (NBT) & NBVT存在钙钛矿单相菱形结构(R3c空间群)。所得结果随后被拉曼分析证实。NBVT化合物的FESEM图像显示,随着v浓度的增加,NBVT化合物的微观结构均匀、清晰,孔洞分散,平均晶粒尺寸减小。V掺杂后,NBT陶瓷带隙能呈增宽趋势。饱和铁电滞回线NBVT表明材料中存在铁电行为。随着v浓度的增加,介电常数随温度的变化呈现铁电相变,并向低温侧偏移。高频率下的低介电损耗使该材料适合于微波器件应用。电学数据的阻抗和模量形式分析表明,非理想体积对化合物的整体电响应和负电阻温度系数(NTCR)行为的贡献占主导地位。为了确定传导机制,采用通用幂律对频率相关的交流电导率数据进行建模。为了确定各种电过程中所涉及的载流子类型,从温度相关的阻抗数据中计算活化能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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