{"title":"Effect of Vanadium doping on the structural, vibrational, optical, dielectric, ferroelectric and electrical properties of Na0.5Bi0.5TiO3 ceramics","authors":"Kasiratnam Teki, Hari Sankar Mohanty, Krishnamayee Bhoi, Subrata Karmakar, Hitesh Borkar, Soumyaranjan Mohapatra","doi":"10.1007/s10854-025-15839-z","DOIUrl":null,"url":null,"abstract":"<div><p>In this report, we have studied the effect of Vanadium (V) substitution on the various properties such as structural, microstructural, morphological, optical and electrical properties of (Na<sub>0.5</sub>Bi<sub>0.5</sub>)Ti<sub>(1−5<i>x/</i>4)</sub>V<sub><i>x</i></sub>O<sub>3</sub> (0.00 ≤ <i>x</i> ≤ 0.15) (NBVT) ceramics. The polycrystalline samples are synthesized using solid-state route followed by high temperature microwave sintering technique. Room temperature XRD analysis along with structural Rietveld refinement technique confirms the existence of perovskite single-phase rhombohedral structure (R3c space group) for Na<sub>0.5</sub>Bi<sub>0.5</sub>TiO<sub>3</sub> (NBT) & NBVT. The obtained results are subsequently corroborated by Raman analysis. The FESEM image of NBVT compounds display the uniform, distinct microstructure, scattered voids and reduction in average grain size with increased V-concentration. The widening in the band gap energy of NBT ceramic is observed upon V doping. A well saturated ferroelectric hysteresis loop NBVT suggests existence of ferroelectric behavior in the material. The temperature dependent dielectric constant shows existence of ferroelectric phase transition and shifted towards low temperature side upon increase in V-concentration. A low dielectric loss at high frequencies makes the material suitable for microwave device applications. Impedance and modulus formalism analysis of electrical data revealed a dominant non-ideal bulk contribution to the compound’s overall electrical response and negative temperature coefficient of resistance (NTCR) behavior. To determine the conduction mechanism, the universal power law is used to model the frequency dependent ac conductivity data. To figure out the type of charge carriers involved in various electrical processes, activation energies are calculated from temperature dependent impedance data.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15839-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this report, we have studied the effect of Vanadium (V) substitution on the various properties such as structural, microstructural, morphological, optical and electrical properties of (Na0.5Bi0.5)Ti(1−5x/4)VxO3 (0.00 ≤ x ≤ 0.15) (NBVT) ceramics. The polycrystalline samples are synthesized using solid-state route followed by high temperature microwave sintering technique. Room temperature XRD analysis along with structural Rietveld refinement technique confirms the existence of perovskite single-phase rhombohedral structure (R3c space group) for Na0.5Bi0.5TiO3 (NBT) & NBVT. The obtained results are subsequently corroborated by Raman analysis. The FESEM image of NBVT compounds display the uniform, distinct microstructure, scattered voids and reduction in average grain size with increased V-concentration. The widening in the band gap energy of NBT ceramic is observed upon V doping. A well saturated ferroelectric hysteresis loop NBVT suggests existence of ferroelectric behavior in the material. The temperature dependent dielectric constant shows existence of ferroelectric phase transition and shifted towards low temperature side upon increase in V-concentration. A low dielectric loss at high frequencies makes the material suitable for microwave device applications. Impedance and modulus formalism analysis of electrical data revealed a dominant non-ideal bulk contribution to the compound’s overall electrical response and negative temperature coefficient of resistance (NTCR) behavior. To determine the conduction mechanism, the universal power law is used to model the frequency dependent ac conductivity data. To figure out the type of charge carriers involved in various electrical processes, activation energies are calculated from temperature dependent impedance data.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.