ZnO薄膜的层依赖光催化效率:动力学分析、结构见解和利用吸收光谱拟合、Tauc图和Cody模型的光学带隙表征

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ibrahim Yaacoub Bouderbala, Amir Guessoum, Selma Rabhi, Abdelmadjid Herbadji, Imed-Eddine Bouras
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引用次数: 0

摘要

本文主要研究多晶ZnO薄膜的微观结构特征和光学性能。采用溶胶-凝胶浸涂工艺在玻璃衬底上制备了不同层数(8、10和12)的ZnO薄膜。XRD结构表征证实了该多晶纤锌矿结构的结晶度随着层数的增加而增强,晶粒尺寸从34.8±0.6 nm增加到40.9±0.7 nm。FE-SEM分析显示,随着厚度的增加,表面皱纹尺寸增加,晶界减小。光学测量表明,在可见光区具有较高的透射率(> 80%),带隙能量从3.17±0.07 eV略微降低到3.11±0.03 eV,乌尔巴赫能量从763.9±5.3增加到847.3±6.1meV。通过紫外光降解罗丹明B来评价其光催化性能,发现随着膜厚度的增加,降解率从0.034±0.007显著提高到0.072±0.008 min−1。这些发现突出了厚度优化ZnO薄膜在环境光催化应用中的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Layer-dependent photocatalytic efficiency of ZnO Thin films: kinetic analysis, structural insights and optical bandgap characterization using absorption spectrum fitting, Tauc’s plot, and Cody models

This article has been allocated to studying microstructural features and optical properties of the polycrystalline thin ZnO films. ZnO thin films were deposited on glass substrates using a sol–gel dip-coating process with varied layer numbers (8, 10, and 12). Structural characterization via XRD confirmed a polycrystalline wurtzite structure with enhanced crystallinity as the number of layers increased and increasing the crystallite size from 34.8 ± 0.6 to 40.9 ± 0.7 nm. FE-SEM analysis revealed increased surface wrinkle size and reduced grain boundaries with thickness. Optical measurements showed high transmittance (> 80%) in the visible region and a slight reduction in bandgap energy from 3.17 ± 0.07 to 3.11 ± 0.03 eV with an increase in Urbach energy from 763.9 ± 5.3 to 847.3 ± 6.1meV. Photocatalytic performance was evaluated by degrading Rhodamine B under UV light, showing a significant enhancement in degradation rate from 0.034 ± 0.007 to 0.072 ± 0.008 min−1 with increased film thickness. These findings highlight the potential of thickness-optimized ZnO films for environmental photocatalytic applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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