{"title":"PrFe₂O _4尖晶石铁氧体的实验和DFT + U研究:结构、光学和电子性能","authors":"Abdullah Saad Alsubaie, Karim Souifi, Ghada Raddaoui, Elyor Berdimurodov, Jasur Tursunqulov","doi":"10.1007/s10854-025-15895-5","DOIUrl":null,"url":null,"abstract":"<div><p>The multifunctional applications of rare-earth spinel ferrites remain limited due to incomplete understanding of their structural–electronic correlations. In this study, we address this challenge by combining experimental characterization and DFT + U calculations to uncover the structural, optical, and electronic properties of PrFe₂O₄. X-ray diffraction confirmed the formation of a single-phase cubic spinel structure (Fd-3 m) with a refined lattice parameter of 8.236 Å and unit cell volume of 558.661 Å3. Crystallite size analysis revealed nanoscale domains (32–43 nm), while SEM showed densely packed micrometer-sized grains, confirming structural densification. Optical measurements identified a strong absorption peak at 950 nm and dual band gaps—an indirect gap of 2.473 eV and a direct gap of 5.453 eV—highlighting broad-spectrum light response. A relatively high Urbach energy (1.941 eV) indicated structural disorder and localized electronic states, correlating with enhanced sub-bandgap absorption. Spin-polarized DFT + U calculations validated the half-metallic nature of PrFe₂O₄, with metallic character in the spin-up channel and semiconducting behavior in the spin-down channel, accompanied by strong spin polarization near the Fermi level. Theoretical optical simulations further revealed anisotropy in dielectric and absorption responses, with the extinction coefficient peaking at 6.5 near 1 eV and a static refractive index exceeding 6. These findings establish PrFe₂O₄ as a multifunctional material with promising potential for spintronic, optoelectronic, and energy-related applications, providing new insights into the structure–property relationship of rare-earth ferrites.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 27","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Experimental and DFT + U investigation of PrFe₂O₄ spinel ferrite: structural, optical, and electronic properties\",\"authors\":\"Abdullah Saad Alsubaie, Karim Souifi, Ghada Raddaoui, Elyor Berdimurodov, Jasur Tursunqulov\",\"doi\":\"10.1007/s10854-025-15895-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The multifunctional applications of rare-earth spinel ferrites remain limited due to incomplete understanding of their structural–electronic correlations. In this study, we address this challenge by combining experimental characterization and DFT + U calculations to uncover the structural, optical, and electronic properties of PrFe₂O₄. X-ray diffraction confirmed the formation of a single-phase cubic spinel structure (Fd-3 m) with a refined lattice parameter of 8.236 Å and unit cell volume of 558.661 Å3. Crystallite size analysis revealed nanoscale domains (32–43 nm), while SEM showed densely packed micrometer-sized grains, confirming structural densification. Optical measurements identified a strong absorption peak at 950 nm and dual band gaps—an indirect gap of 2.473 eV and a direct gap of 5.453 eV—highlighting broad-spectrum light response. A relatively high Urbach energy (1.941 eV) indicated structural disorder and localized electronic states, correlating with enhanced sub-bandgap absorption. Spin-polarized DFT + U calculations validated the half-metallic nature of PrFe₂O₄, with metallic character in the spin-up channel and semiconducting behavior in the spin-down channel, accompanied by strong spin polarization near the Fermi level. Theoretical optical simulations further revealed anisotropy in dielectric and absorption responses, with the extinction coefficient peaking at 6.5 near 1 eV and a static refractive index exceeding 6. These findings establish PrFe₂O₄ as a multifunctional material with promising potential for spintronic, optoelectronic, and energy-related applications, providing new insights into the structure–property relationship of rare-earth ferrites.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 27\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-15895-5\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-15895-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Experimental and DFT + U investigation of PrFe₂O₄ spinel ferrite: structural, optical, and electronic properties
The multifunctional applications of rare-earth spinel ferrites remain limited due to incomplete understanding of their structural–electronic correlations. In this study, we address this challenge by combining experimental characterization and DFT + U calculations to uncover the structural, optical, and electronic properties of PrFe₂O₄. X-ray diffraction confirmed the formation of a single-phase cubic spinel structure (Fd-3 m) with a refined lattice parameter of 8.236 Å and unit cell volume of 558.661 Å3. Crystallite size analysis revealed nanoscale domains (32–43 nm), while SEM showed densely packed micrometer-sized grains, confirming structural densification. Optical measurements identified a strong absorption peak at 950 nm and dual band gaps—an indirect gap of 2.473 eV and a direct gap of 5.453 eV—highlighting broad-spectrum light response. A relatively high Urbach energy (1.941 eV) indicated structural disorder and localized electronic states, correlating with enhanced sub-bandgap absorption. Spin-polarized DFT + U calculations validated the half-metallic nature of PrFe₂O₄, with metallic character in the spin-up channel and semiconducting behavior in the spin-down channel, accompanied by strong spin polarization near the Fermi level. Theoretical optical simulations further revealed anisotropy in dielectric and absorption responses, with the extinction coefficient peaking at 6.5 near 1 eV and a static refractive index exceeding 6. These findings establish PrFe₂O₄ as a multifunctional material with promising potential for spintronic, optoelectronic, and energy-related applications, providing new insights into the structure–property relationship of rare-earth ferrites.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.