BaxBi(1-x)TixFexO3 (BBTFx)复合材料是先进电子和光子应用的有前途的材料

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Manali N. Shah, Devang D. Shah, P. N. Gajjar, Rajshree B. Jotania, R. K. Mehta
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引用次数: 0

摘要

采用常规固相法合成了通式为BaxBi(1−x)TixFexO3的钡铋钛氧化铁化合物,其中x的范围为0.0 ~ 1.0,步长为0.25。x射线衍射分析证实形成了具有最小二次相的单相钙钛矿结构。傅里叶变换红外光谱揭示了与铁氧和钛氧键相关的特征金属-氧振动模式。扫描电镜显示晶粒结构清晰,孔隙率低,晶粒形态在不同成分中存在差异。紫外-可见吸收研究和tac图显示了可调谐的能带隙,支持该材料在光电应用方面的潜力,如紫外光电探测器。介电和阻抗谱揭示了非德拜型弛豫的频率和温度依赖行为。初步的极化电场测量表明,与钛酸钡相比,其热稳定性得到改善,漏电流减少,铁电行为增强,这表明居里温度可能有所提高。这些结果突出了BBTFx系统作为高温电子和光子应用的有前途的候选者,包括电容器,传感器和存储设备。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
BaxBi(1-x)TixFexO3 (BBTFx) composite as promising material for advanced electronic and photonic applications

Barium bismuth titanium iron oxide compounds with the general formula BaxBi(1−x)TixFexO3, where x ranges from 0.0 to 1.0 in steps of 0.25, were synthesized using the conventional solid-state method and systematically characterized. X-ray diffraction analysis confirmed the formation of a single-phase perovskite structure with minimal secondary phases. Fourier transform infrared spectroscopy revealed characteristic metal–oxygen vibrational modes associated with iron–oxygen and titanium–oxygen bonds. Scanning electron microscopy showed well-defined grains with low porosity and variations in grain morphology across different compositions. Ultraviolet–visible absorption studies and Tauc plots indicated a tunable energy band gap, supporting the material’s potential for optoelectronic applications, such as ultraviolet photodetectors. Dielectric and impedance spectroscopy revealed frequency- and temperature-dependent behavior with non-Debye-type relaxation. Preliminary polarization–electric field measurements demonstrated improved thermal stability, reduced leakage current, and enhanced ferroelectric behavior, suggesting a possible increase in Curie temperature compared to barium titanate. These results highlight the BBTFx system as a promising candidate for high-temperature electronic and photonic applications, including capacitors, sensors, and memory devices.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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