在铜线上溅射超薄金涂层:提高球的形成和可靠性,为先进的电线连接

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Bo-Chin Huang, Bo-Ding Wu, Chien-Te Huang, Fei-Yi Hung, Jie-Yun Zheng
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引用次数: 0

摘要

镀金铜线减轻了铜氧化,同时保持了优异的导电性和导热性,从而提高了第二键的可靠性。然而,传统的金涂层通常太厚,在电子点火(EFO)过程中,通过熔融金封装破坏自由空气球(FAB)的形成。本研究采用溅射将Au涂层保持在~ 20nm,改善FAB的形貌。通过热处理和高温时效对其热稳定性、结合强度和界面性能进行了评价。结果表明,镀金铜丝在300℃处理后仍能保持镀层的完整性,但在400℃处理后,由于金沿晶界扩散导致镀层退化,导致界面缺陷。老化试验(175°C, 24-72小时)证实了铜丝的严重氧化,而镀金的铜丝在其保护金层下保持稳定。FAB的形貌与铜丝相似,没有金的偏析。结合试验表明,两种铜线的第一键附着力都很强,但老化的铜线出现了镀金铜线所避免的失效。与镀铜和镀钯铜线相比,镀金铜线的电阻也最低。总体而言,溅射镀金铜线有效地提高了抗氧化性,FAB形成和键合可靠性,为半导体封装提供了强大的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sputtered ultra-thin Au coating on Cu wire: enhancing ball formation and reliability for advanced wire bonding

Au-coated Cu wire mitigates Cu oxidation while preserving excellent electrical and thermal conductivity, thereby enhancing second-bond reliability. However, conventional Au coatings are often too thick, disrupting free air ball (FAB) formation through molten Au encapsulation during the electronic flame-off (EFO) process. This study employs sputtering to maintain the Au coating at ~ 20 nm, improving FAB morphology. Thermal stability, bonding strength, and interfacial properties were evaluated via heat treatment and high-temperature aging. Results show that Au-coated Cu wire retained coating integrity after 300 °C treatment yet degraded beyond 400 °C due to Au diffusion along grain boundaries, causing interfacial defects. Aging tests (175 °C, 24–72 h) confirmed severe oxidation in Cu wire, whereas Au-coated Cu wire remained stable under its protective Au layer. FAB morphology was similar to Cu wire, with no Au segregation. Bonding tests revealed strong first bond adhesion in both wires, but aged Cu wire exhibited failures that Au-coated Cu wire avoided. Compared to Cu and Pd-coated Cu wires, Au-coated Cu wire also showed the lowest electrical resistance. Overall, sputter-deposited Au-coated Cu wire effectively improves oxidation resistance, FAB formation, and bonding reliability, offering strong potential for semiconductor packaging.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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