{"title":"在铜线上溅射超薄金涂层:提高球的形成和可靠性,为先进的电线连接","authors":"Bo-Chin Huang, Bo-Ding Wu, Chien-Te Huang, Fei-Yi Hung, Jie-Yun Zheng","doi":"10.1007/s10854-025-14975-w","DOIUrl":null,"url":null,"abstract":"<div><p>Au-coated Cu wire mitigates Cu oxidation while preserving excellent electrical and thermal conductivity, thereby enhancing second-bond reliability. However, conventional Au coatings are often too thick, disrupting free air ball (FAB) formation through molten Au encapsulation during the electronic flame-off (EFO) process. This study employs sputtering to maintain the Au coating at ~ 20 nm, improving FAB morphology. Thermal stability, bonding strength, and interfacial properties were evaluated via heat treatment and high-temperature aging. Results show that Au-coated Cu wire retained coating integrity after 300 °C treatment yet degraded beyond 400 °C due to Au diffusion along grain boundaries, causing interfacial defects. Aging tests (175 °C, 24–72 h) confirmed severe oxidation in Cu wire, whereas Au-coated Cu wire remained stable under its protective Au layer. FAB morphology was similar to Cu wire, with no Au segregation. Bonding tests revealed strong first bond adhesion in both wires, but aged Cu wire exhibited failures that Au-coated Cu wire avoided. Compared to Cu and Pd-coated Cu wires, Au-coated Cu wire also showed the lowest electrical resistance. Overall, sputter-deposited Au-coated Cu wire effectively improves oxidation resistance, FAB formation, and bonding reliability, offering strong potential for semiconductor packaging.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sputtered ultra-thin Au coating on Cu wire: enhancing ball formation and reliability for advanced wire bonding\",\"authors\":\"Bo-Chin Huang, Bo-Ding Wu, Chien-Te Huang, Fei-Yi Hung, Jie-Yun Zheng\",\"doi\":\"10.1007/s10854-025-14975-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Au-coated Cu wire mitigates Cu oxidation while preserving excellent electrical and thermal conductivity, thereby enhancing second-bond reliability. However, conventional Au coatings are often too thick, disrupting free air ball (FAB) formation through molten Au encapsulation during the electronic flame-off (EFO) process. This study employs sputtering to maintain the Au coating at ~ 20 nm, improving FAB morphology. Thermal stability, bonding strength, and interfacial properties were evaluated via heat treatment and high-temperature aging. Results show that Au-coated Cu wire retained coating integrity after 300 °C treatment yet degraded beyond 400 °C due to Au diffusion along grain boundaries, causing interfacial defects. Aging tests (175 °C, 24–72 h) confirmed severe oxidation in Cu wire, whereas Au-coated Cu wire remained stable under its protective Au layer. FAB morphology was similar to Cu wire, with no Au segregation. Bonding tests revealed strong first bond adhesion in both wires, but aged Cu wire exhibited failures that Au-coated Cu wire avoided. Compared to Cu and Pd-coated Cu wires, Au-coated Cu wire also showed the lowest electrical resistance. Overall, sputter-deposited Au-coated Cu wire effectively improves oxidation resistance, FAB formation, and bonding reliability, offering strong potential for semiconductor packaging.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 14\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14975-w\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14975-w","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Sputtered ultra-thin Au coating on Cu wire: enhancing ball formation and reliability for advanced wire bonding
Au-coated Cu wire mitigates Cu oxidation while preserving excellent electrical and thermal conductivity, thereby enhancing second-bond reliability. However, conventional Au coatings are often too thick, disrupting free air ball (FAB) formation through molten Au encapsulation during the electronic flame-off (EFO) process. This study employs sputtering to maintain the Au coating at ~ 20 nm, improving FAB morphology. Thermal stability, bonding strength, and interfacial properties were evaluated via heat treatment and high-temperature aging. Results show that Au-coated Cu wire retained coating integrity after 300 °C treatment yet degraded beyond 400 °C due to Au diffusion along grain boundaries, causing interfacial defects. Aging tests (175 °C, 24–72 h) confirmed severe oxidation in Cu wire, whereas Au-coated Cu wire remained stable under its protective Au layer. FAB morphology was similar to Cu wire, with no Au segregation. Bonding tests revealed strong first bond adhesion in both wires, but aged Cu wire exhibited failures that Au-coated Cu wire avoided. Compared to Cu and Pd-coated Cu wires, Au-coated Cu wire also showed the lowest electrical resistance. Overall, sputter-deposited Au-coated Cu wire effectively improves oxidation resistance, FAB formation, and bonding reliability, offering strong potential for semiconductor packaging.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.