Mehmet Yilmaz, Adem Kocyigit, Erman Erdogan, Murat Yıldırım, Maria Luisa Grilli
{"title":"用于可见光探测的Ag/Ga2O3/n-Si肖特基型光电探测器","authors":"Mehmet Yilmaz, Adem Kocyigit, Erman Erdogan, Murat Yıldırım, Maria Luisa Grilli","doi":"10.1007/s10854-025-14892-y","DOIUrl":null,"url":null,"abstract":"<div><p>Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) is an ultra-wide band gap material which has been receiving increasing interest for its potential applications in power electronics, ultraviolet (UV) photodetectors, and gas sensors. In this study, we have synthesized <i>β</i>-phase Ga<sub>2</sub>O<sub>3</sub> on n-Si substrate using the electrodeposition technique, and investigated its properties for use in photodetector applications for broadband detection combining Si and Ga<sub>2</sub>O<sub>3</sub>. X-ray diffractometer (XRD), scanning electron microscope (SEM) with energy dispersive x-ray (EDX) analysis were conducted to illuminate structural and morphological behaviors of the Ga<sub>2</sub>O<sub>3</sub>. Ag metallic contacts on the Ga<sub>2</sub>O<sub>3</sub>/n-Si junction and Al ohmic contact on the back surface of the n-Si were obtained by thermal evaporation technique. Thus, Ag/Ga<sub>2</sub>O<sub>3</sub>/n-Si Schottky-type photodetectors were fabricated and characterized by current–voltage (<i>I-V</i>) measurements depending on various light power intensities and wavelengths ranging from UV to near-infrared (NIR). The diode characteristics, as well as the photodetection parameters such as responsivity, specific detectivity, and external quantum efficiency (<i>EQE</i>) were determined and discussed in detail. The Ag/Ga<sub>2</sub>O<sub>3</sub>/n-Si Schottky-type photodetectors showed high performances: 122.88 A/W responsivity, 1.07 × 10<sup>12</sup> Jones specific detectivity, and very high <i>EQE</i> value of 2.18 × 10<sup>4</sup>% at 700 nm wavelength. The obtained Ag/Ga<sub>2</sub>O<sub>3</sub>/n-Si Schottky-type photodetector exhibits promising potential as a candidate for optoelectronic applications in the visible range. These photodetectors can be used in visible light communication, light sensing and cameras.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 14","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10854-025-14892-y.pdf","citationCount":"0","resultStr":"{\"title\":\"Ag/Ga2O3/n-Si Schottky-type photodetector for visible light detection\",\"authors\":\"Mehmet Yilmaz, Adem Kocyigit, Erman Erdogan, Murat Yıldırım, Maria Luisa Grilli\",\"doi\":\"10.1007/s10854-025-14892-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) is an ultra-wide band gap material which has been receiving increasing interest for its potential applications in power electronics, ultraviolet (UV) photodetectors, and gas sensors. In this study, we have synthesized <i>β</i>-phase Ga<sub>2</sub>O<sub>3</sub> on n-Si substrate using the electrodeposition technique, and investigated its properties for use in photodetector applications for broadband detection combining Si and Ga<sub>2</sub>O<sub>3</sub>. X-ray diffractometer (XRD), scanning electron microscope (SEM) with energy dispersive x-ray (EDX) analysis were conducted to illuminate structural and morphological behaviors of the Ga<sub>2</sub>O<sub>3</sub>. Ag metallic contacts on the Ga<sub>2</sub>O<sub>3</sub>/n-Si junction and Al ohmic contact on the back surface of the n-Si were obtained by thermal evaporation technique. Thus, Ag/Ga<sub>2</sub>O<sub>3</sub>/n-Si Schottky-type photodetectors were fabricated and characterized by current–voltage (<i>I-V</i>) measurements depending on various light power intensities and wavelengths ranging from UV to near-infrared (NIR). The diode characteristics, as well as the photodetection parameters such as responsivity, specific detectivity, and external quantum efficiency (<i>EQE</i>) were determined and discussed in detail. The Ag/Ga<sub>2</sub>O<sub>3</sub>/n-Si Schottky-type photodetectors showed high performances: 122.88 A/W responsivity, 1.07 × 10<sup>12</sup> Jones specific detectivity, and very high <i>EQE</i> value of 2.18 × 10<sup>4</sup>% at 700 nm wavelength. The obtained Ag/Ga<sub>2</sub>O<sub>3</sub>/n-Si Schottky-type photodetector exhibits promising potential as a candidate for optoelectronic applications in the visible range. 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Ag/Ga2O3/n-Si Schottky-type photodetector for visible light detection
Gallium oxide (Ga2O3) is an ultra-wide band gap material which has been receiving increasing interest for its potential applications in power electronics, ultraviolet (UV) photodetectors, and gas sensors. In this study, we have synthesized β-phase Ga2O3 on n-Si substrate using the electrodeposition technique, and investigated its properties for use in photodetector applications for broadband detection combining Si and Ga2O3. X-ray diffractometer (XRD), scanning electron microscope (SEM) with energy dispersive x-ray (EDX) analysis were conducted to illuminate structural and morphological behaviors of the Ga2O3. Ag metallic contacts on the Ga2O3/n-Si junction and Al ohmic contact on the back surface of the n-Si were obtained by thermal evaporation technique. Thus, Ag/Ga2O3/n-Si Schottky-type photodetectors were fabricated and characterized by current–voltage (I-V) measurements depending on various light power intensities and wavelengths ranging from UV to near-infrared (NIR). The diode characteristics, as well as the photodetection parameters such as responsivity, specific detectivity, and external quantum efficiency (EQE) were determined and discussed in detail. The Ag/Ga2O3/n-Si Schottky-type photodetectors showed high performances: 122.88 A/W responsivity, 1.07 × 1012 Jones specific detectivity, and very high EQE value of 2.18 × 104% at 700 nm wavelength. The obtained Ag/Ga2O3/n-Si Schottky-type photodetector exhibits promising potential as a candidate for optoelectronic applications in the visible range. These photodetectors can be used in visible light communication, light sensing and cameras.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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