合成条件对锂离子电池用铁酸镍纳米颗粒形貌、表面化学和电化学性能的影响

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Reshma S Babu, Eszter Madai, Durga S Nair, Prasad Gonugunta, Seyedamirhossein Mohseni Armaki, Ruud Hendrikx, Thamayanthi Panneerselvam, Ramaswamy Murugan, V. V. Ravi Kanth Kumar, Peyman Taheri, Arjan Mol, N. Satyanarayana, Prasaanth Ravi Anusuyadevi
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引用次数: 0

摘要

在寻找用于能量转换和存储装置的有效高科技材料的过程中,尖晶石结构的镍铁氧体(NiFe2O4)已被确定为锂离子电池(LIBs)极具前景的负极材料。然而,纳米NiFe2O4的不同形貌和表面性质对电池性能的影响却很少被研究。为了了解不同形貌和表面性质对锂离子存储性能的影响,采用NFO-S、NFO-U、NFO-G和NFO-C四种不同的合成条件合成了纳米NiFe2O4。通过XRD、FTIR和拉曼光谱证实了NiFe2O4多晶反尖晶石的形成。用FESEM对所得样品的形貌进行了研究,发现四种不同的合成条件使我们得到了四种不同形貌的NiFe2O4。用XPS和BET分别表征了NiFe2O4样品的表面化学性质、比表面积和孔隙率。通过制备锂离子半电池,研究了四种NiFe2O4样品作为正极材料的电化学性能。在无表面活性剂条件下制备的NiFe2O4样品(NFO-S)在电流密度为100 mA/g时,初始放电容量为2258 mAh/g,初始充电容量为1815 mAh/g。即使在100次循环后,NFO-S在电流密度为100 mA/g时的放电容量也比其他样品更好,达到116 mAh/g。NFO-S样品具有较高的比表面积(40.8 m2/g)和孔体积(0.190 cm3/g)。用阳离子CTAB表面活性剂(NFO-C)制备的NiFe2O4样品表现出较好的循环稳定性,在第100次循环时库仑效率稳定在98.5%,这主要归功于其纳米立方体的形貌,比表面积(16.1 m2/g)和孔体积(0.087 cm3/g)较低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of synthesis conditions on morphology, surface chemistry and electrochemical performance of nickel ferrite nanoparticles for lithium-ion battery applications

In the search for effective high-tech materials for energy conversion and storage devices, spinel-structured nickel ferrite (NiFe2O4) has been identified as a promising anode material for lithium-ion batteries (LIBs). However, the influence of different morphologies and surface properties of NiFe2O4 nanoparticles on battery performance is hardly addressed. To understand the effect of different morphologies and surface properties on the lithium-ion storage performance, NiFe2O4 nanoparticles were synthesized through four different synthesis conditions: NFO-S, NFO-U, NFO-G, and NFO-C. The formation of polycrystalline inverse spinel NiFe2O4 was confirmed through XRD, FTIR, and Raman spectroscopy. The morphologies of the obtained samples were studied using FESEM, and it was found that the four different synthesis conditions employed here enabled us to obtain NiFe2O4 with four different morphologies. The surface chemistry, surface area and porosity of the NiFe2O4 samples were respectively characterized using XPS and BET. The electrochemical performance of the four NiFe2O4 samples as anode material was studied by fabricating lithium-ion half-cells. NiFe2O4 sample obtained from surfactant-free synthesis condition (NFO-S) displayed a high initial discharge and charge capacity of 2258 mAh/g and 1815 mAh/g, respectively at the current density of 100 mA/g. Even after 100 cycles, NFO-S showed a better discharge capacity of 116 mAh/g at the current density of 100 mA/g, compared to the other samples studied here. The observed higher capacity of the NFO-S sample is attributed to the higher surface area (40.8 m2/g) and pore volume (0.190 cm3/g). The NiFe2O4 sample prepared with cationic CTAB surfactant (NFO-C) showed better cyclic stability with a stable coulombic efficiency of 98.5% at the 100th cycle, mainly attributed to its nanocube morphology with lower surface area (16.1 m2/g) and pore volume (0.087 cm3/g).

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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