Nidhi Prajapati, Preeti Sehgal, Hiren Machhi, S. S. Soni, C. N. Murthy
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引用次数: 0
摘要
在这项研究中,我们研究了提高含NiO的p型染料敏化太阳能电池(DSSCs)性能的最佳碳同素异形体。研究了各种碳的同素异形体,包括多壁碳纳米管(MWCNT)、还原氧化石墨烯(RGO)、石墨烯量子点(GQD)和富勒烯(C60),它们具有不同的结构和电化学性能。与NiO掺入后,这些碳同素异形体的功率转换效率(PCE)趋势为(NiO@GQD) NG < (NiO@fullerene) NF < (NiO@RGO) NR < (NiO@f-MWCNT) NM,对应的PCE值分别为0.55%、0.60%、0.72%和0.80%。NG、NR、NF和NM的量子效率(QE)值分别约为62%、65%、70%和80%。在四种镍基纳米杂化器件中,纳米基器件的PCE最高,为0.80%,短路电流密度(Jsc)为2.53 mA cm⁻2,开路电压(Voc)为0.56 V,填充因子(FF)为56.46%。这种优异的性能归因于纳米纳米杂化材料增强的染料吸附和快速电荷转移特性。
Nickel oxide and carbon allotropes-based nanohybrids show enhanced efficiency of p-type dye-sensitized solar cells
In this study, we investigated the optimal carbon allotropes to enhance the performance of p-type dye-sensitized solar cells (DSSCs) with NiO. Various allotropes of carbon, including multi-walled carbon nanotubes (MWCNT), reduced graphene oxide (RGO), graphene quantum dots (GQD), and fullerene (C60), were examined for their distinct structural and electrochemical properties. When incorporated with NiO, these carbon allotropes displayed a power conversion efficiency (PCE) trend of (NiO@GQD) NG < (NiO@fullerene) NF < (NiO@RGO) NR < (NiO@f-MWCNT) NM, with corresponding PCE values of 0.55%, 0.60%, 0.72%, and 0.80%. The quantum efficiency (QE) values of NG, NR, NF, and NM were found to be approximately 62%, 65%, 70%, and 80%, respectively. Among the four NiO-based nanohybrids, the NM-based device exhibited the highest PCE of 0.80%, with a short-circuit current density (Jsc) of 2.53 mA cm⁻2, an open-circuit voltage (Voc) of 0.56 V, and a fill factor (FF) of 56.46%. This superior performance is attributed to the enhanced dye adsorption and rapid charge transfer properties facilitated by the NM nanohybrid.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.