Pb-16Sn-7.5Sb-xAg/Ni接头组织演变及剪切行为

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Fan Wang, Xiaodi Zhang, Richu Wang, Jian Peng
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引用次数: 0

摘要

熔点为240°C的pb16sn7.5 sb基焊料可以作为该温度范围内理想的候选焊料。研究了Pb16Sn7.5Sb-xAg/Ni焊点焊接2 ~ 60min后的显微组织和抗剪强度。在Pb-16Sn-7.5Sb-xAg/Ni接头界面处形成Ni3Sn2 + NiSb相。Ni3Sn2 + NiSb相的厚度与时间的平方根成正比。Ag的加入提高了Ni3Sn2和NiSb相的活化能,抑制了Ni3Sn2和NiSb相的快速生长。因此,焊接2 min后,Pb16Sn7.5Sb-1Ag/Ni接头的Ni3Sn2 + NiSb相厚度为0.35 μm,接头抗剪强度可达25.9 MPa。当Ni3Sn2 + NiSb相厚度为0.38 μm时,焊接5 min后抗剪强度提高到32.5 MPa。随着Ni3Sn2 + NiSb相厚度的增加,延长焊接时间后,其强度减小到23.5 MPa。均匀且厚度合适的Ni3Sn2 + NiSb层是保证Pb-16Sn-7.5Sb-xAg/Ni合金力学性能的关键。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microstructure evolution and shear behavior of Pb-16Sn-7.5Sb-xAg/Ni joints

The Pb16Sn7.5Sb-based solder with a melting point of 240 °C can be used as an ideal candidate solder in this temperature range. The microstructure and shear strength of Pb16Sn7.5Sb-xAg/Ni solder joints after soldering for 2 ~ 60 min were investigated in present work. The Ni3Sn2 + NiSb phases formed at the interface of the Pb-16Sn-7.5Sb-xAg/Ni joints. The thickness of Ni3Sn2 + NiSb phases was proportional to the square root of time. However, the Ag addition increased the activation energy of the Ni3Sn2 and NiSb phases, which inhibited the rapid growth of the Ni3Sn2 and NiSb phases. Therefore, the thickness of Ni3Sn2 + NiSb phases of Pb16Sn7.5Sb-1Ag/Ni joint was 0.35 μm after soldering for 2 min, the shear strength of the joint can reach 25.9 MPa. The shear strength increased to 32.5 MPa when the thickness of the Ni3Sn2 + NiSb phase was 0.38 μm after 5 min soldering. It decreased to 23.5 MPa after prolonged the soldering time as the Ni3Sn2 + NiSb phase thickness increased. A uniform Ni3Sn2 + NiSb layer with adequate thickness is the key for the mechanical properties of the Pb-16Sn-7.5Sb-xAg/Ni.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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