Journal of Computational Electronics最新文献_第7页

AI-powered deep ultraviolet laser diode design for resource-efficient optimization 人工智能驱动的深紫外激光二极管设计，实现资源效率优化

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-07-02 DOI: 10.1007/s10825-025-02352-z

Asima Sarwar, Muhammad Usman, Masroor Hussain, Khurram Khan Jadoon, Tareq Manzoor, Shazma Ali

{"title":"AI-powered deep ultraviolet laser diode design for resource-efficient optimization","authors":"Asima Sarwar, Muhammad Usman, Masroor Hussain, Khurram Khan Jadoon, Tareq Manzoor, Shazma Ali","doi":"10.1007/s10825-025-02352-z","DOIUrl":"10.1007/s10825-025-02352-z","url":null,"abstract":"<div><p>AlGaN-based deep ultraviolet laser diodes (LDs) have attracted considerable interest because of their diverse applications over the last two decades. The optimization of DUV LDs is essential to advancing high-efficiency photonic devices. However, traditional simulation tools are computationally intensive and slow, presenting challenges for iterative development of optoelectronic devices. We propose an AI-driven approach that leverages machine learning (ML) and explainable AI (XAI) to accelerate the design process of DUV LD and enhance understanding of the correlation between key LD performance parameters. Our methodology involves training ML models on a dataset of DUV LD design parameters to evaluate each model’s predictive accuracy. We also integrate XAI to assess input feature importance such as material composition and thickness of epilayers. This framework provides predictions for laser output power (<span>(P_{text {out}})</span>), laser threshold current (<span>(I_{text {th}})</span>), and optical confinement factor (<span>(Gamma)</span>) with <i>R</i><sup>2</sup> values of 73%, 71%, and 80%, respectively, with the best-performing model that is extreme gradient boosting. This model substantially reduces the computational time required for optimum design iteration. These results demonstrate that our AI-based approach outperforms traditional methods in speed and resource efficiency, providing actionable insights into design parameters that align with physical mechanisms. This work establishes a resource-efficient AI framework that accelerates the development cycle of high-performance LDs.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Nonlinear and dispersive effects on dark soliton interaction in photonic crystal fiber 光子晶体光纤中暗孤子相互作用的非线性和色散效应

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-07-02 DOI: 10.1007/s10825-025-02371-w

Mohammed Salim Jasim AL-Taie

引用次数: 0

Design and simulation analysis of a cylindrical shell capacitive pressure sensor for noninvasive measurement of low pressure 一种无创低压测量柱壳电容式压力传感器的设计与仿真分析

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-07-01 DOI: 10.1007/s10825-025-02351-0

Leah Salome Anzetse, Zhaohua Chang, Jiahui Hu, Simon Nandwa Anjiri

{"title":"Design and simulation analysis of a cylindrical shell capacitive pressure sensor for noninvasive measurement of low pressure","authors":"Leah Salome Anzetse, Zhaohua Chang, Jiahui Hu, Simon Nandwa Anjiri","doi":"10.1007/s10825-025-02351-0","DOIUrl":"10.1007/s10825-025-02351-0","url":null,"abstract":"<div><p>Capacitive pressure sensors (CPS) have several applications and are widely used for pressure measurement. However, they have a significant disadvantage in terms of sensitivity versus dynamic range trade-off. Mostly, it is crucial and challenging to use CPS for noninvasive assessment of low pressure in medical flexible tubings. Diaphragm displacement of flat plate sensors due to a radial displacement of a fluid catheter is small. This makes the sensor insensitive because the transmission mechanism might not amplify the input displacement for minute but significant loads. Additionally, the dynamic range and sensitivity are reduced because of the small contact surface area between the catheter and a flat plate diaphragm. To address these challenges, we design and analyze a novel type of sensor, namely, the cylindrical shell capacitive pressure sensor (CS-CPS). CS-CPS allows increased contact surface area between the sensor and flexible tubings, thus enhancing input displacement, sensitivity, and simplicity of integration with flexible tubings. The sensor is designed and simulated in COMSOL Multiphysics. The finite element analysis method is utilized to analyze the diaphragm deformation and capacitance variations in response to pressure. For verification purposes, we do a mathematical analysis in MATLAB using the derived deformation and capacitance variation formulae. Compared to the flat plate sensor, the newly designed sensor achieved an increased diaphragm displacement of 2.49x10<span>(^{-7} text{mm})</span> and sensitivity of 2.312x10<span>(^{-21} text{pF/Pa})</span> without compromising the dynamic range. The CS-CPS has shown to be more effective than the flat plate sensor for noninvasive sensing of pressure in flexible tubings.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145141926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on single-event radiation effects and hardening techniques in GaN HEMTs 氮化镓hemt单事件辐射效应及硬化技术研究

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-30 DOI: 10.1007/s10825-025-02376-5

Yuan Liu, Ying Wang, Hao Huang

{"title":"Study on single-event radiation effects and hardening techniques in GaN HEMTs","authors":"Yuan Liu, Ying Wang, Hao Huang","doi":"10.1007/s10825-025-02376-5","DOIUrl":"10.1007/s10825-025-02376-5","url":null,"abstract":"<div><p>We propose a new radiation-hardened AlGaN/GaN High Electron Mobility Transistor (N-HEMT) structure with an AlGaN insertion layer integrated into a conventional gate field-plate configuration. The AlGaN insertion layer acts as a back-barrier, effectively minimizing leakage current in the buffer layer, which in turn boosts the breakdown voltage of the device. Due to the band discontinuity and bandgap difference between AlGaN and GaN, this layer creates a quantum well at the heterojunction interface, trapping radiation-induced electrons and blocking their entry into the conductive channel. This mechanism lowers the production rate of electron–hole pairs triggered by impact ionization, significantly enhancing the device’s tolerance to single-event burnout (SEB). By optimizing parameters using Sentaurus TCAD, the reinforced structure (N-HEMT) attains a breakdown voltage of 912 V and an SEB threshold of 600 V, reflecting gains of 77 V and 350 V, respectively, compared to the conventional standard AlGaN/GaN HEMT structure (T-HEMT). While slight reductions in output and transfer performance are observed, these are considered insignificant for practical use.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145145653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CsInTiS4 quantum dots as a next-generation material: bridging ceramics and semiconductors for sustainable nanotechnology CsInTiS4量子点作为下一代材料：桥接陶瓷和半导体的可持续纳米技术

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-30 DOI: 10.1007/s10825-025-02374-7

M. S. El-Bana, M. A. M. El-Mansy

{"title":"CsInTiS4 quantum dots as a next-generation material: bridging ceramics and semiconductors for sustainable nanotechnology","authors":"M. S. El-Bana, M. A. M. El-Mansy","doi":"10.1007/s10825-025-02374-7","DOIUrl":"10.1007/s10825-025-02374-7","url":null,"abstract":"<div><p>This in-depth exploration dives into the fascinating world of CslnTiS<sub>4</sub> quantum dots (QDs), uncovering their exciting potential for optoelectronics and photonics. Using X-ray diffraction (XRD), researchers found that these QDs have a unique monoclinic crystal structure, classified under <span>(P21)</span> space group. This sets them apart from typical perovskites and titanates, giving them a structural identity all their own. One standout feature is their direct forbidden bandgap of 2.22 eV, which is much smaller than the bandgaps of traditional titanate ceramics like CsAlTiO<sub>4</sub> (often above 3 eV). This narrower bandgap opens up new possibilities for visible-light applications. Advanced computational tools, like density functional theory (DFT), reveal strong interactions between the Ti-d % S-p orbitals, enhancing the material’s ability to absorb visible light. The authors highlight impressive optical properties, including high dielectric constants, refractive indices, and absorption coefficients, all pointing to excellent light–matter interactions. Notably, the material shows strong third-order nonlinear optical responses, making it ideal for cutting-edge photonic technologies. Swapping ln & S for Al & O in the CsAlTiO<sub>4</sub> framework adds even more flexibility, improving electronic transitions and boosting charge mobility. With such finely tuned bandgap, enhanced dielectric properties, and remarkable nonlinear behavior, CslnTiS<sub>4</sub>–QDs emerge as a game-changing alternative to traditional titanates. These tiny but mighty quantum dots hold immense promise for applications in solar cells, photodetectors, and advanced nonlinear optical devices that usher in a new era of materials science innovation.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145145452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation of a supercapciator device and its properties based on graphene/hBN electrode material and KCl as an electrolyte 以石墨烯/氢化硼为电极材料，以氯化钾为电解液的超级电容器装置及其性能模拟

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-28 DOI: 10.1007/s10825-025-02363-w

Fatemeh Shirvani, Mohammad Reza Jafari, Aliasghar Shokri

{"title":"Simulation of a supercapciator device and its properties based on graphene/hBN electrode material and KCl as an electrolyte","authors":"Fatemeh Shirvani, Mohammad Reza Jafari, Aliasghar Shokri","doi":"10.1007/s10825-025-02363-w","DOIUrl":"10.1007/s10825-025-02363-w","url":null,"abstract":"<div><p>In this work, a supercapacitor device with a graphene/hexagonal boron nitride (hBN) electrode and KCl electrolyte was simulated to investigate its electrochemical performance. Key parameters such as potential and current of the cell, ion concentration (<span>(hbox {K}^+)</span> and <span>(hbox {Cl}^-)</span>), electrode and electrolyte potential, and total current density at the interface were analyzed over time. The electrode current density as a function of electrode potential was also studied. The results demonstrated a maximum specific capacitance of 624.72 F/g at a current density of <span>(-hbox {1.08 A/cm}^2)</span> and a potential of 0.116 V, confirming the system’s behavior within the supercapacitor range. Additionally, the maximum power dissipation density was 54.13 <span>(hbox {W/cm}^3)</span> at a current density of −0.61 <span>(times)</span> <span>(hbox {10}^{-4})</span> <span>(hbox {A/cm}^2)</span>. These findings highlight the potential of KCl as an effective electrolyte in graphene/hBN-based supercapacitors, paving the way for enhanced energy storage technologies.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145145508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reliable leakage-enabled memristor model for large-scale circuits 可靠的大规模电路漏使能忆阻器模型

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-28 DOI: 10.1007/s10825-025-02377-4

Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad

{"title":"Reliable leakage-enabled memristor model for large-scale circuits","authors":"Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad","doi":"10.1007/s10825-025-02377-4","DOIUrl":"10.1007/s10825-025-02377-4","url":null,"abstract":"<div><p>Memristors offer great potential for advanced memory and computing systems due to their ability to retain their resistance state. Several simulation models have been proposed to enable early analysis. However, there are convergence issues associated with some models, especially faster ones. This paper proposes reliable solutions to overcome convergence challenges in memristor simulation models. We studied and analyzed potential factors, including model nonlinearity, complexity, and the incorporated window functions. Adaptive solutions are developed to dynamically adjust to memristor behavior, effectively mitigating the convergence problem and improving accuracy and stability. We used genuine memristor experimental data and verified our solutions against the BELIEVER model in the simulations. These proposed adaptive techniques can enhance memristor convergence, enabling their adoption in diverse fields for improved simulation conditions. The maximum error of the proposed solution in the I–V characteristic remains below 15%. This level of accuracy is suitable, while it ensures the reliability of the circuit’s output with this specific model modification. </p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145145510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Utilizing dual inverted pyramid structures to optimize light absorption for significantly enhanced performance of perovskite solar cells 利用双倒金字塔结构优化光吸收，显著提高钙钛矿太阳能电池的性能

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-27 DOI: 10.1007/s10825-025-02375-6

Wang Wang, Enze Quan, Minchen Xie, Lijia Chen

{"title":"Utilizing dual inverted pyramid structures to optimize light absorption for significantly enhanced performance of perovskite solar cells","authors":"Wang Wang, Enze Quan, Minchen Xie, Lijia Chen","doi":"10.1007/s10825-025-02375-6","DOIUrl":"10.1007/s10825-025-02375-6","url":null,"abstract":"<div><p>Perovskite solar cells (PSCs) have garnered significant attention in photovoltaics due to their simple fabrication process, low cost, and excellent photovoltaic performance. To enhance the power conversion efficiency (PCE), we designed a PSC incorporating a charge transport layer with a dual inverted pyramid reflectance-reducing structure. The effect of the depth of the inverted pyramid spires on the PCE of PSCs was investigated. The results indicate that introducing the dual inverted pyramid in PSCs with the structure of ITO/PEDOT: PSS/MAPbI<sub>3</sub>/SnO<sub>2</sub>/Ag significantly reduces light reflectivity and enhances light absorption. This structural optimization facilitates better light energy capture, which improves PCE of PSCs. Additionally, the dual inverted pyramid structure increases the interfacial contact area between the light absorption layer and the charge transport layer and shortens carrier transport distances, contributing to improved carrier transport efficiency. The PSCs based on the dual inverted pyramid structure demonstrate outstanding photovoltaic performance, with a maximum short-current density (Jsc) of 26.24 mA/cm<sup>2</sup> and a PCE of 24.92%. Compared to the conventional PSCs without the pyramid structure, the Jsc and PCE increased by 16.3% and 11.3%, respectively.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145145312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic and magnetocaloric properties of a C20 fullerene structure: Monte Carlo study C20富勒烯结构的磁性和磁热学性质：蒙特卡罗研究

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-23 DOI: 10.1007/s10825-025-02368-5

A. Jabar, S. Benyoussef, L. Bahmad

引用次数: 0

Signal integrity analysis in mixed CNT bundle interconnects using EM-RA 基于EM-RA的混合碳纳米管束互连信号完整性分析

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-21 DOI: 10.1007/s10825-025-02353-y

Ashish Singh, Ajay Kumar, Amit Kumar

{"title":"Signal integrity analysis in mixed CNT bundle interconnects using EM-RA","authors":"Ashish Singh, Ajay Kumar, Amit Kumar","doi":"10.1007/s10825-025-02353-y","DOIUrl":"10.1007/s10825-025-02353-y","url":null,"abstract":"<div><p>This paper presents the exponential matrix-rational approximation (EM-RA) technique for signal integrity analysis in on-chip mixed-carbon-nanotube (CNT) bundle (MCB) interconnects incorporating the temperature (<i>T</i>) and dielectric surface roughness (DSR). The variations considered are temperature, ranging from 300 to 500 K, and dielectric surface roughness (DSR), spanning from 10 to 180 pm. The impact on the area and delay of the MCB interconnect is observed by varying the shells of multi-walled CNTs (MWCNTs) and the number of single-walled CNTs (SWCNTs). Using the proposed EM-RA technique for MCBs, the delay in three-line coupled interconnects is obtained by simplifying its multi-conductor transmission line representation to an equivalent single-conductor model. The transient response has been obtained through SPICE simulation across different numbers of conducting channels in MWCNTs compared to SWCNTs and is validated using EM-RA. The in-phase and out-of-phase delays are computed in this paper considering varying temperatures and dielectric surface roughness for different conducting channels of MWCNTs in relation to SWCNTs. From SPICE simulations, it is observed that with fewer shells in MWCNTs, the MCB on average requires 40.42% smaller area in comparison to the bundled SWCNTs for the same crosstalk delay. Subsequently, for the equivalent MCB area, the delay improves by 47.18% for MWCNTs with fewer shells than for bundled SWCNTs.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145144123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0