Investigating the effect of structural modifications on the performance of transistors based on black phosphorene nanoribbons

Abstract

The modern electronic devices’ development heavily relies on the miniaturization of MOSFET transistors. On the other hand, reduction in transistor sizes will face significant challenges, like short-channel effects. To enhance transistor performance, it is essential to explore and utilize new materials. Black phosphorene has emerged as a promising material for constructing transistors and other electronic components. Accurate modeling is crucial for predicting the behavior of future nanoscale transistors. One of proposed simulation methods is the top-of-barrier model. This study analyzes transistors based on black phosphorene nanoribbons. The electronic structure of these nanoribbons is calculated using the tight-binding method with up to five nearest neighbors. The top-of-barrier computational approach within the Landauer framework is employed to determine device characteristics. Initial evaluations of a structure without antidots show that creating an off-center antidot increases the on current to 4.98 mA. The threshold voltage also rises by 0.2 V, indicating an increase in the energy band gap, which reduces the off current significantly. The on/off current ratio can be improved by up to 2500 times with an optimal antidot design. Non-central antidots do not significantly affect the threshold voltage or off current.