Journal of Computational Electronics最新文献

{"title":"Design of quantum nonclassicality enhancing circuit (QNC): compromise among noise figure, gain, and nonclassicality","authors":"Ahmad Salmanogli","doi":"10.1007/s10825-026-02630-4","DOIUrl":"10.1007/s10825-026-02630-4","url":null,"abstract":"<div><p>This study presents the design and analysis of a specialized RF/MW circuit named the Quantum Non-classicality Enhancing Circuit, specifically developed for quantum applications. The primary objective is to reduce the noise figure within the operational frequency range of 4–8 GHz to enhance nonclassical properties in quantum signals. To achieve this, a HEMT was chosen due to its exceptional noise reduction capabilities, which are critical for quantum engineering. While targeting a noise figure of less than 0.065 dB within the specified frequency band, a trade-off with gain was identified. This issue was addressed by introducing additional amplification stages to stabilize the noise figure without compromising overall performance. Quantum analysis of the circuit, based on a simplified HEMT model, provided valuable insights into its nonlinear behavior and the interaction between circuit components and environmental factors. Using the QuTiP toolbox in Python, a time-evolution analysis of the system was conducted, revealing the circuit’s response as an open quantum system under cryogenic conditions. The study also explores the relationship between quantum correlation (measured by quantum discord) and the noise figure, raising significant questions about the impact of noise minimization on enhancing nonclassicality at low temperatures. Alongside the quantum analysis, a detailed circuit layout was designed and optimized to minimize the noise figure. The findings from the quantum analysis demonstrated that nonclassicality generation and noise minimization share a common foundation, reinforcing the design approach. This comprehensive study highlights the complex interplay between circuit design and quantum properties, offering a strategic path toward improved quantum signal processing at cryogenic temperatures.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148838019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-performance THz-inspired metamaterial sensor with perfect absorption for cancer cell detection","authors":"Pratibha Kumari,&nbsp;Ajeet Kumar","doi":"10.1007/s10825-026-02631-3","DOIUrl":"10.1007/s10825-026-02631-3","url":null,"abstract":"<div><p>In this paper, we propose a highly sensitive terahertz (THz) metamaterial biosensor for detecting cancer-related analytes. The finite element method and frequency- domain solver in the CST Studio Suite are used for analyzing the proposed design. The proposed structure employs gallium arsenide (GaAs) as the substrate material and a gold resonator architecture optimized for the THz frequency range. Unlike previously reported multilayer THz sensors, the proposed single-layer metamaterial sensor achieves absorptivity of 99.99% at a resonance frequency of 2.69 THz, with a maximum figure of merit of 60 RIU^<b>−1</b><b>.</b> A high quality factor of 134.50 indicates strong field confinement and sharp resonance behavior while maintaining the simple and fabrication-friendly structure. The analyte layer, representing various cancer-related biomolecules, is modelled by varying its refractive index (RI) to evaluate the sensor’s responsiveness. Significant redshift in the resonant frequency is observed with increasing refractive index, demonstrating excellent sensitivity and facilitating the cancerous cells detection. By changing the RI (1.36 to 1.40), a maximum sensitivity of 1200 GHz/RIU with an average sensitivity of 1040 GHz/RIU is achieved. The sensor attains a high R² value of 0.999 with a detection limit of 0.014 RIU. Furthermore, the maximum sensitivity of 1100 GHz/RIU, in addition to the quality factor of 132.95, is observed for basal cells. The use of GaAs enhances the electromagnetic field localization, thus improving sensor performance. Therefore, the proposed biosensor holds great potential for the early-stage identification of various cancer cells<b>,</b> providing a non-invasive, label-free solution for advanced biomedical diagnostics in the THz domain.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148838241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling, validation, and performance analysis of nonlinear dynamics of CMUT membrane","authors":"Avik Ghosh Dastidar,&nbsp;Reshmi Maity,&nbsp;Ramesh Chandra Tiwari,&nbsp;Deepanwita Ghosh,&nbsp;Niladri Pratap Maity","doi":"10.1007/s10825-026-02621-5","DOIUrl":"10.1007/s10825-026-02621-5","url":null,"abstract":"<div><p>For a variety of causes, including membrane stretching and electrostatic softening, the membrane of a microelectromechanical system (MEMS)-based capacitive micromachined ultrasonic transducer (CMUT) exhibits nonlinear behavior when vibrating in response to an AC electrical signal over a DC bias. Effects like harmonic distortion, bi-stability, and frequency shifts are brought about by these occurrences. The higher-order modes that result from the deflections caused by nonlinear coupling are frequently difficult for various analytical models, such as lumped-element techniques, to capture. Using the Föppl–von Kármán equation, a dedicated theory for CMUT nonlinear vibrations is developed in this paper. Geometric nonlinearity, viscous damping, and external force are incorporated into a reduced-order Föppl–von Kármán plate equation. The nonlinear partial differential equations are converted into slow-flow amplitude and phase equations that characterize the membrane’s effective modal dynamics using perturbation-based averaging techniques. A CMUT model is developed for FEM simulation and calibrated with experimental data of resonance frequency. It is performed at sub-resonant (50 kHz), near-resonant (100 kHz), and super-resonant (150 kHz) regimes for a substantial period of time. The resulting time-domain displacement responses are then evaluated using Hilbert-transform-based amplitude. The key characteristics seen in FEM data, such as amplitude saturation, resonance detuning, asymmetric displacement envelopes, and sluggish modulation of oscillation amplitude close to resonance, are satisfactorily explained by the analytical model. The envelope modulation and enhanced phase sensitivity were observed near resonance. The analytical model explained the phenomenon as a consequence of nonlinear frequency pulling and the coexistence of stable and unstable fixed points in the amplitude–phase plane.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148837566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advanced photonic crystal-based design for NAND and NOR optical logic gates using spectral domain reconstruction graph neural network","authors":"Sweety Julia,&nbsp;Jayam Pradeep Kumar","doi":"10.1007/s10825-026-02624-2","DOIUrl":"10.1007/s10825-026-02624-2","url":null,"abstract":"<div><p>Photonic crystal-based optical logic gates are promising candidates for next-generation all-optical computing because of their high speed, compact size, and low power consumption. However, their practical implementation is often limited by fabrication sensitivity and restricted operational bandwidth. This paper presents an advanced photonic crystal-based design for NAND and NOR optical logic gates using spectral domain reconstruction graph neural network (SDRGNN) and stellar oscillation optimizer (SOO). A square-lattice photonic crystal structure with a photonic bandgap of 1.43–2.14 µm is employed, where waveguides and defect rods are strategically configured to control light propagation and output power. SDRGNN enables reliable all-optical computation by exploiting the photonic crystal’s energy gap and spectral characteristics, while SOO optimizes gate output performance. Simulation results demonstrate stable and accurate logic operations. The NOR gate achieves output intensities of 0.784, 0.052, 0.113, and 0.021 a.u., whereas the NAND gate produces 1.08, 0.556, 0.582, and 0.151 a.u. for different input states. The proposed design also attains a compact footprint of 95 µm and a stabilization time of 0.28 ps. These results confirm the effectiveness of the proposed framework for high-speed, reliable, and scalable photonic computing and optical signal processing applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical confinement-based pixel architecture for enhanced broadband near-infrared sensitivity in CMOS image sensors","authors":"Mustafa Ozber Yucekul,&nbsp;Mahmud Yusuf Tanrikulu","doi":"10.1007/s10825-026-02627-z","DOIUrl":"10.1007/s10825-026-02627-z","url":null,"abstract":"<div><p>The limited near-infrared (NIR) sensitivity of silicon-based complementary metal–oxide–semiconductor (CMOS) image sensors remains a fundamental constraint for low-light and broadband imaging applications, primarily due to the weak absorption of silicon at longer wavelengths. In this work, an optical confinement-based pixel architecture is proposed to enhance broadband near-infrared (NIR) sensitivity without modifying the material system or increasing the silicon thickness. The design introduces a geometrically engineered light-trapping mechanism that redistributes incident photons, increases their propagation path within the silicon, and suppresses transmission losses at the pixel level. The structure is analyzed using finite-difference time-domain (FDTD) simulations over the 400–1000 nm spectral range and compared with a conventional flat pixel configuration. The results indicate that, while the optical efficiency remains largely unchanged in the visible spectrum, a substantial enhancement is achieved in the near-infrared region. In particular, the optical efficiency reaches up to 0.94 at 1000 nm, corresponding to an enhancement factor of approximately 3.7 compared to the conventional structure. This improvement is attributed to enhanced photon confinement enabled by angular redistribution and multiple internal reflections within the pixel structure. The proposed architecture provides a broadband, fabrication-compatible, and scalable solution for extending the spectral response of CMOS image sensors.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Explicit near-threshold inversion charge solution for III–V MOSFETS within the unified charge control model","authors":"Tijana Kevkić,&nbsp;Slavica Jovanović,&nbsp;Dragana Todorović,&nbsp;Miljana Milentijević","doi":"10.1007/s10825-026-02617-1","DOIUrl":"10.1007/s10825-026-02617-1","url":null,"abstract":"<div><p>In long-channel III–V bulk MOSFETs, inversion charge is commonly described within the Unified Charge Control Model (UCCM) through an implicit nonlinear charge–voltage relation that generally requires numerical solution. In this work, the Homotopy Perturbation Method (HPM), a semi-analytical technique widely used for nonlinear problems in physics, is applied to the normalized UCCM relation in order to derive an explicit approximate solution in the near-threshold regime, where inversion charge control dominates. A third-order closed-form solution is obtained without numerical inversion or additional empirical fitting beyond the standard model parameterization. Compared with the numerical UCCM solution, the HPM-based approximation shows relative errors on the order of 10⁻⁶ near threshold. Comparable accuracy is obtained in the corresponding drain–current evaluation in the near-threshold low-<span>({V}_{DS})</span> linear regime. The explicit approximation also enables a significant reduction in computational effort relative to numerical inversion by allowing non-iterative <span>(Oleft(1right))</span> evaluation of the inversion charge. Although demonstrated for long-channel <span>({In}_{0.53}{Ga}_{0.47}As)</span> nMOSFETs, the formulation is general within the UCCM framework and can be extended to other III–V channel materials through appropriate parameter selection.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Segment-wise local adiabatic design for compact photonic mode-evolution devices","authors":"Junyu Qiu,&nbsp;Yihang Yan,&nbsp;Jiarui Zhang,&nbsp;Jin Zhang,&nbsp;Wenxi Zhou,&nbsp;Baiyu Wang,&nbsp;Tu-Lu Liang","doi":"10.1007/s10825-026-02620-6","DOIUrl":"10.1007/s10825-026-02620-6","url":null,"abstract":"<div><p>Adiabatic mode evolution is widely employed in integrated photonic devices because of its broadband operation and tolerance to fabrication variations. In practice, however, adiabatic structures are often designed using heuristic geometric profiles, which can lead to unnecessarily long device footprints. This difficulty is closely related to the asymptotic dependence of transmission efficiency on device length, which makes unconstrained efficiency maximization ineffective for practical compact design synthesis. In this work, we present a segment-wise locally constrained design framework for compact adiabatic photonic devices. The method reformulates adiabatic design as a sequential construction problem in which a prescribed global transmission target is enforced through spatially distributed local coupling constraints. To quantify these constraints, we introduce the maximum mode-connection loss fraction, a phase-insensitive local metric that relates transmission requirements to segment-wise admissibility conditions. Based on this formulation, device geometries are generated through a deterministic map-and-solve procedure, where each segment is constructed near its admissible coupling boundary under the specified performance constraint. The proposed framework provides an explicit computational workflow for determining compact geometry evolution without relying on predefined global taper parameterizations. The method is validated using representative photonic components including tapers, mode converters, and directional couplers. Compared with conventional globally parameterized designs under identical transmission targets, the proposed approach consistently achieves substantial footprint reduction, with reductions of up to ~ 80% observed in strongly non-uniform coupling regimes. Additional studies further demonstrate the influence of spatial discretization and local constraint allocation on achievable device compactness. These results establish a practical numerical framework linking local coupling constraints to compact adiabatic device synthesis and provide a systematic design methodology compatible with standard simulation tools such as EME and FDTD.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148782130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction: Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension","authors":"Philip Calado,&nbsp;Ilario Gelmetti,&nbsp;Benjamin Hilton,&nbsp;Mohammed Azzouzi,&nbsp;Jenny Nelson,&nbsp;Piers R. F. Barnes","doi":"10.1007/s10825-026-02618-0","DOIUrl":"10.1007/s10825-026-02618-0","url":null,"abstract":"","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148751749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-sensitivity grated D-shaped Au–SnSe₂ SPR fiber-optic sensor for temperature detection using Bayesian regularized neural networks","authors":"Rahul Rahul,&nbsp;Jaisingh Thangaraj","doi":"10.1007/s10825-026-02622-4","DOIUrl":"10.1007/s10825-026-02622-4","url":null,"abstract":"<div><p>Conventional optical-fiber temperature sensors often suffer from limited sensitivity, narrow dynamic range, and reliance on manual spectral interpretation without intelligent predictive integration. To address these limitations, we propose a grated D-shaped fiber-based SPR sensor for temperature sensing application. We used gold (Au) and tin selenide (SnSe₂) as the sensing layers. The analyte we have chosen is ethanol–chloroform solution with 50–50% and 60–40%, respectively. We varied the temperature (T) from 0 to 100 °C with 10 °C intervals. This work makes two main contributions: First, it optimizes the structure of the Au/SnSe₂ grating-assisted D-shaped configuration and analyzes its practical feasibility, including a study of how a ± 2% fabrication tolerance affects performance. Second, it introduces a machine learning framework that compares with various models: Bayesian Regularized Artificial Neural Network (BRANN), Kolmogorov–Arnold Network (KAN), Gaussian Process Regression (GPR), XGBoost, CatBoost etc., to automatically and accurately predict resonance wavelength (RW) and temperature sensitivity (TS) for the range 0–100 ⁰C. We got the best performance with the BRANN model with mean absolute percentage error (MAPE) of 0.009985%. We achieved a maximum TS of around 12 nm/°C for both concentration variations, manually. The maximum value of the figure of merit (FOM) was 0.132°C⁻¹ for 50–50% solution and 0.137 °C⁻¹ for 60–40% solution, respectively. It provides a promising platform for high-sensitivity temperature monitoring in applications requiring compact size, high immunity to electromagnetic interference, and optical remote sensing.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148751640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical design and optimization of a black phosphorus-BiFeO3 multilayer SPR sensor for enhanced refractive index sensing toward anemia diagnosis","authors":"Debashish Pal,&nbsp;Arijit De,&nbsp;Prithviraj Singh Chouhan,&nbsp;Subhankar Shome,&nbsp;Manoj Sharma,&nbsp;M. Chethan,&nbsp;Helen Merina Albert,&nbsp;Tapasmini Sahoo,&nbsp;Anita Gehlot,&nbsp;Amrindra Pal","doi":"10.1007/s10825-026-02619-z","DOIUrl":"10.1007/s10825-026-02619-z","url":null,"abstract":"<div><p>This research details the design and optimization of a surface plasmon resonance (SPR) biosensor with enhanced sensitivity, achieved through the implementation of multilayer heterostructures comprising black phosphorus (BP), BaTiO₃ and BiFeO₃. SPR sensors are vital for label-free biomolecule detection due to their high sensitivity and real-time monitoring capabilities, but traditional designs often suffer from limited field confinement and suboptimal sensitivity. Addressing these limitations, we propose innovative configurations based on a BK7 prism coupled with Ag/Dielectric/Ag/BP multilayers. The reflectivity and sensitivity of each configuration were assessed using the transfer matrix method, with variations in silver and dielectric layer thicknesses. The results demonstrate that the incorporation of BP significantly improves field confinement, resulting in sharper resonance dips and more pronounced resonance angle shifts, especially when combined with BiFeO₃. The BK7/ Ag(55 nm)/ BiFeO₃(4 nm)/ Ag(1 nm)/ BP(1 nm) sensor exhibited the highest sensitivity, reaching 350.44°/RIU, exceeding that of the BaTiO₃-based sensor (305.38°/RIU). Further investigation showed that increasing the BP layer thickness and the refractive index of the sensing medium, like blood, further boosted the sensor’s sensitivity, reaching values exceeding 520°/RIU for the BiFeO₃-based sensor. This enhanced performance is attributed to BP’s outstanding optoelectronic properties, including high carrier mobility and strong light-matter interaction. These results highlight the critical role of BP in improving SPR biosensor performance, making it a highly promising material for precise, label-free detection of biomolecules, in clinical diagnostics and environmental monitoring applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148751334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}