Journal of Computational Electronics最新文献

Stepped graphene-covered plasmonic dipole antenna for detecting (text {NO}_2) gas at mid-infrared frequencies 用于探测中红外频率(text {NO}_2)气体的阶梯石墨烯覆盖等离子体偶极子天线

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-07-04 DOI: 10.1007/s10825-023-02057-1

Mohammad Mahdi Ghods, Majid Afsahi

引用次数: 0

A novel design of graphene field-effect transistor-based out-phasing power amplifier 一种基于石墨烯场效应晶体管的新型失相功率放大器设计

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-07-04 DOI: 10.1007/s10825-023-02064-2

Mohsen Pooya, Mohammad Bagher Tavakoli, Farbod Setoudeh, Ashkan Horri, Ali Safari

{"title":"A novel design of graphene field-effect transistor-based out-phasing power amplifier","authors":"Mohsen Pooya, Mohammad Bagher Tavakoli, Farbod Setoudeh, Ashkan Horri, Ali Safari","doi":"10.1007/s10825-023-02064-2","DOIUrl":"10.1007/s10825-023-02064-2","url":null,"abstract":"<div>Graphene transistors are promising candidates for nano-circuits in telecommunication bands due to their high amplification bandwidth, extremely high carrier mobility, high saturation velocity, and the good electric conductance of the graphene channel. In this study, the parameters of a compact model are implemented in the Verilog-A language. An out-phasing power amplifier is designed using microstrip input/output matching, bias network, and quarter-wave Chireix divider/combiner over the frequency range of 2–4 GHz. The simulation results of graphene out-phasing power amplifier in advanced design system software show an increase of about 14 dB in the output gain, an intermodulation distortion (IMD) suppression of better than − 21.8 dBc, and a DC power consumption of 20 mW. In addition, the figures of merit of the proposed design show improvements in terms of gain, IMD, power consumption, and input/output return loss compared to other graphene amplifiers at different frequencies. A comparison of our design with some other amplifiers in various technologies at different frequencies shows a good gain and better IMD suppression in our design. Moreover, the power consumption, input/output return loss, and bandwidth of our strategy are relatively improved.\u0000</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 4","pages":"1010 - 1023"},"PeriodicalIF":2.1,"publicationDate":"2023-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4505056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of carrier transport on modulation characteristics of quantum-well semiconductor lasers 载流子输运对量子阱半导体激光器调制特性的影响

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-06-30 DOI: 10.1007/s10825-023-02060-6

Moustafa Ahmed, Maan Al-Alhumaidi

{"title":"Influence of carrier transport on modulation characteristics of quantum-well semiconductor lasers","authors":"Moustafa Ahmed, Maan Al-Alhumaidi","doi":"10.1007/s10825-023-02060-6","DOIUrl":"10.1007/s10825-023-02060-6","url":null,"abstract":"<div>We discuss modeling the influence of carrier transport phenomena in quantum well (QW) semiconductor lasers on the device's current modulation characteristics. The escape and capture of charge carriers between the QW and the separate confinement heterostructure (SCH) are considered the major carrier transport phenomena. The small-signal analysis is applied to linearize the QW laser's rate equations and obtain expressions for the intensity modulation (IM) response. The carrier transport is assessed in terms of the lifetimes of the carrier escape and capture processes. In this study, we evaluated the impacts of these transport times on both the modulation bandwidth and response peak frequency. In addition, we used the obtained results to assess the tolerance of using the simple standard two-rate equation (STREs) model to describe the modulation properties of QW lasers. We demonstrate that when the capture lifetime is less than 20 ps and the escape lifetime is greater than 0.1 ps, the modulation bandwidth and response peak frequency reach their maximum values, which interestingly match the results simulated by the STRE model. With departures from the ideal ranges of these transport lifetimes, the tolerance of applying STREs becomes poorer. The findings in this study advance and supplement the theory and simulation of QW laser diodes.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 4","pages":"1140 - 1150"},"PeriodicalIF":2.1,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"5156814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comment on the paper “Analyzing the effect of dynamic properties of materials and operating medium on sensor parameters to increase the performance of diaphragmbased static/dynamic pressure sensors, Timuçin Emre Tabaru, Şekip Esat Hayber, Journal of Computational Electronics, 2021, 20:643–657” 评论论文 "分析材料和工作介质的动态特性对传感器参数的影响以提高膜片式静态/动态压力传感器的性能，Timuçin Emre Tabaru、Şekip Esat Hayber，《计算电子学杂志》，2021 年，20:643-657"

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-06-26 DOI: 10.1007/s10825-023-02061-5

Asterios Pantokratoras

引用次数: 0

Correction to: Analyzing the effect of dynamic properties of materials and operating medium on sensor parameters to increase the performance of diaphragm-based static/dynamic pressure sensors 修正:分析材料和工作介质的动态特性对传感器参数的影响，提高基于膜片的静/动压力传感器的性能

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-06-26 DOI: 10.1007/s10825-023-02066-0

Timuçin Emre Tabaru, Şekip Esat Hayber

引用次数: 0

First principles investigation of transition metal hydrides LiXH3 (X = Ti, Mn, and Cu) for hydrogen storage 过渡金属氢化物LiXH3 (X = Ti, Mn和Cu)储氢第一性原理研究

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-06-20 DOI: 10.1007/s10825-023-02065-1

Syed Farhan Ali Shah, G. Murtaza, Khawar Ismail, Hafiz Hamid Raza, Imran Javed Khan

{"title":"First principles investigation of transition metal hydrides LiXH3 (X = Ti, Mn, and Cu) for hydrogen storage","authors":"Syed Farhan Ali Shah, G. Murtaza, Khawar Ismail, Hafiz Hamid Raza, Imran Javed Khan","doi":"10.1007/s10825-023-02065-1","DOIUrl":"10.1007/s10825-023-02065-1","url":null,"abstract":"<div>Renewable energy prices are decreasing, making it easier to make energy systems that are good for the environment. High-density storage for renewable energy is possible with hydrogen. This work focuses on the theoretical study of LiXH3 (where X = Ti, Mn, and Cu), including their structural, electronic, mechanical, thermoelectric, and hydrogen storage properties, using first-principles calculations. LiCuH3 is more stable than LiMnH3 and LiTiH3, based on the optimization graph. The electronic properties show the metallic nature of these studied hydrides. Born’s criterion indicates that all studied hydrides are brittle for various mechanical applications. LiTiH3, LiMnH3, and LiCuH3 are all thought to be able to store hydrogen with gravimetric storage capacities of 5.22%, 4.66%, and 4.11%, respectively. Based on how their thermoelectric properties change with temperature, all the materials under study can absorb heat energy, which shows that they are both electrically and thermally conductive.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 4","pages":"921 - 929"},"PeriodicalIF":2.1,"publicationDate":"2023-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4800285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

The impact of SnMnO2 TCO and Cu2O as a hole transport layer on CIGSSe solar cell performance improvement SnMnO2 TCO和Cu2O作为空穴传输层对CIGSSe太阳能电池性能提高的影响

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-06-14 DOI: 10.1007/s10825-023-02050-8

Raushan Kumar, Akhilesh Kumar, Ravi Pushkar, Alok Priyadarshi

{"title":"The impact of SnMnO2 TCO and Cu2O as a hole transport layer on CIGSSe solar cell performance improvement","authors":"Raushan Kumar, Akhilesh Kumar, Ravi Pushkar, Alok Priyadarshi","doi":"10.1007/s10825-023-02050-8","DOIUrl":"10.1007/s10825-023-02050-8","url":null,"abstract":"<div>In this work, two experimental CIGSSe thin-film solar cells (TFSCs) are simulated and demonstrate high efficiency of 20 and 22.92%. The photovoltaic results of both devices are then validated based on the experiential optoelectronic values. After the simulation, a compelling result is confirmed for both the experimental and simulated solar cells. Finally, various designs are proposed. The proposed Type-1 solar cell is designed by the addition of low resistivity, wide energy bandgap (Eg), and minimum absorption coefficient (α) based tin-doped manganese oxide (Sn1−xMnxO2) material in a conventional solar cell instead of ZnO:B and ZnMgO:Al transparent conducting oxide (TCO) layers. Further, by matching the band energy alignment and adjusting the thickness and doping concentration of the TCO, buffer, and absorber layers, the efficiency of the proposed Type1 TFSC has been increased from 20 to 27.75%. The proposed Type-1 solar cell has some drawbacks, such as the inability to appropriately suppress the photogenerated minority carrier recombination losses due to the absence of a hole transport layer (HTL), and the external quantum efficiency (EQE) is lower than that of the conventional solar cell. Furthermore, wide band energy and a high α based on cuprous oxide (Cu2O) as an HTL are added between the absorber and the back ohmic contact layers in the proposed Type-1 solar cell. Then the structure becomes a Type-2 TFSC. The Type-2 TFSC absorbs more blue light, instantly suppressing the recombination losses and enhancing power conversion efficiency (PCE) (η = 29.01%) and EQE (97%).</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 4","pages":"1107 - 1127"},"PeriodicalIF":2.1,"publicationDate":"2023-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4576456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Correction to: Microwave coplanar band-stop filters based on electric-LC resonators: systematic numerical approach and experimental validation 基于电- lc谐振器的微波共面带阻滤波器校正:系统数值方法与实验验证

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-06-13 DOI: 10.1007/s10825-023-02059-z

Martino Aldrigo, Leonardo Zappelli, Alina Cismaru, Mircea Dragoman, Sergiu Iordanescu, Damir Mladenovic, Catalin Parvulescu, C. H. Joseph, Davide Mencarelli, Luca Pierantoni, Paola Russo

引用次数: 0

Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer 具有梯度AlGaN/Si3N4栅极和p型缓冲层的超薄双势垒AlGaN/GaN高阈值电压HEMT

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-06-05 DOI: 10.1007/s10825-023-02063-3

Kexiu Dong, Yangyi Zhang, Bingting Wang, Yanli liu, Wenjuan Yu

{"title":"Ultra-thin double barrier AlGaN/GaN high threshold voltage HEMT with graded AlGaN/Si3N4 gate and p-type buffer layer","authors":"Kexiu Dong, Yangyi Zhang, Bingting Wang, Yanli liu, Wenjuan Yu","doi":"10.1007/s10825-023-02063-3","DOIUrl":"10.1007/s10825-023-02063-3","url":null,"abstract":"<div>An ultra-thin double barrier enhancement mode (E-mode) AlGaN/GaN high-electron mobility transistor (HEMT) with p-type buffer layer and Si3N4/graded p-AlGaN gate is proposed and investigated by Silvaco TCAD. The simulation results show that the designed HEMT can obtain a high threshold voltage over 5.0 V and large gate swing. The maximum gate leakage current is 3.11 × 10–4 A/mm at 30 V gate voltage, which decreases four orders of magnitude compared to the conventional double barrier HEMTs. Due to the p-type buffer layer, the cut-off frequency for the proposed HEMT is raised over three-times compared to the conventional double barrier structure HEMT with n-type buffer layer. Meanwhile the designed HEMT exhibits high breakdown voltage and large current-gain. Moreover, the impacts of Si3N4 layer thickness under gate and GaN channel layer thickness are analyzed. Both layers play significant roles in obtaining high threshold voltage for the device by adjusting the conduction band energy of AlGaN/GaN interface potential well.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 4","pages":"1024 - 1030"},"PeriodicalIF":2.1,"publicationDate":"2023-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4550711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mg2Si heterostructure-based SOI TFET with steep subthreshold swing and high current drivability 基于Mg2Si异质结构的SOI TFET具有陡峭的亚阈值摆幅和高电流驱动性

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-06-04 DOI: 10.1007/s10825-023-02051-7

Sukanta Kumar Swain, Sangita Kumari Swain, Shashi Kant Sharma

引用次数: 0