Journal of Computational Electronics最新文献

{"title":"Heterojunction active layer MAPbI3/CsPbI3 design for high-performance perovskite solar cells: a computational analysis achieving 20.5% efficiency","authors":"Darko Abdalla Noori","doi":"10.1007/s10825-025-02283-9","DOIUrl":"10.1007/s10825-025-02283-9","url":null,"abstract":"<div><p>This simulation study employed three distinct perovskite solar cell (PSC) structures: double electron transport layer (DETL) composed of (10–50 nm) TiO₂/ (50 nm) ZnO, double hole transport layer (DHTL) incorporated of (20–100 nm) MoO_<i>x</i>/ (200 nm) Spiro-OMeTAD, and double active layer (DAL) consisted of (300 nm) MAPbI₃/ (50–150 nm) CsPbI₃ based PSCs separately. These configurations aimed to increase the charge carrier population and enhance fast electron and hole injection toward the electrodes in PSCs-based MAPbI₃. Then, a morphological simulation study was conducted to evaluate the spatial distribution of the electron charge carrier density within the ETL, HTL, and perovskite materials. Additionally, the investigation delved into charge carrier density, charge carrier generation, and recombination within the thin-film materials, and compared the performance of single and doubling layers in PSCs. Notably, the simulation results demonstrated a remarkable power conversion efficiency (PCE) of 20.52% for the heterojunction active layer structure, surpassing the PCE of 19.8% and 18.5% were achieved for the DHTL and DETL configuration, respectively. Moreover, the PCE of the cell enhanced by 29% with the DAL (300-nm MAPbI₃/150-nm CsPbI₃) structure compared to the reference cell. This study provides meaningful information for advancing the realm of high-efficiency planar PSCs founded on double absorber layer structure.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143108628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Material-driven optimization of CdTe/gold interfaces to boost NIR performance in nanostructured solar cells","authors":"Mohammedasif Rahamathulla,&nbsp;Dinesh Kumar,&nbsp;Sheela K. Ramasesha,&nbsp;Jayesh Cherusseri","doi":"10.1007/s10825-025-02281-x","DOIUrl":"10.1007/s10825-025-02281-x","url":null,"abstract":"<div><p>This study investigates the optimization of the near-infrared (NIR) performance of CdS/CdTe nanowall-based solar cells through strategic engineering of the CdTe/gold interface. The effect of including various materials, including lead telluride (PbTe), lead sulfide (PbS), germanium telluride (GeTe), molybdenum ditelluride (MoTe₂), copper telluride (Cu₂Te), and tin telluride (SnTe), has been studied using the device physics-based simulations TCAD software Silvaco. The effect of these materials on NIR absorption and charge carrier dynamics is evaluated through in-depth simulations of current–voltage characteristics, internal quantum efficiency (IQE), and energy band diagrams. Our results reveal that MoTe₂ offers the optimal trade-off between IQE and key photovoltaic parameters, exhibiting superior performance across a broad spectral range, with particular excellence in the NIR region. The study reveals the pivotal role of heterojunction types formed at the CdTe/interfacial material interface on device performance. This study reveals critical material-performance relationships in nanostructured solar cells, offering a valuable insight to aid in optimizing NIR response for the development of advanced photovoltaics.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143108047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Computer simulations of a four-element array antenna using polyethylene (PE) substrate and parameter analysis for compact, flexible wireless applications","authors":"R. Ramyea,&nbsp;Senthil Kumar Kandasamy,&nbsp;N. Kasthuri","doi":"10.1007/s10825-024-02272-4","DOIUrl":"10.1007/s10825-024-02272-4","url":null,"abstract":"<div><p>Flexible wireless applications in the C band microwave region require a conformal wideband antenna that resonates equally in all directions. In this paper, a polymer substrate-based array antenna is designed at an operating frequency of 7.3 GHz covering a bandwidth from 5 to 8 GHz. Conventional substrates such as FR4 (flame-retardant) have certain operational constraints with regard to high power, gain, and high dielectric constant (4.4), which results in a narrow impedance bandwidth and high return loss. In order to reduce this, a thermally stable and low-dielectric-constant (2.25) polyethylene (PE) substrate-based antenna is designed with a four-element array. The designed antenna is simulated, and its results are analysed and compared for both substrates. The gain and directivity increased to 6.25 and 6.45 dB, respectively. The return loss and voltage standing wave ratio (VSWR) reduced to −32.57 dB and 0.33. The radiation efficiency for the proposed four-element array antenna with polyethylene substrate was 96.8%. Thus, the resultant gain and efficiency of the polymer substrate antenna are improved compared with conventional antennas. The fabricated four-element array antenna with PE substrate provides a −22.25-dB return loss and standing wave ratio less than 2 through real-time testing at 7.3 GHz.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143110037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improving the efficiency and performance of Rb2SnI6-based perovskite solar cells through comprehensive optimization: a numerical study","authors":"Minhaz Ul Alam,&nbsp;Md. Kamrul Islam Shifat,&nbsp;Jibon Krishna Modak,&nbsp;Md. Tarekuzzaman,&nbsp;Md. Ismail Haque,&nbsp;Md. Rasheduzzaman,&nbsp;Md Abdul Qader,&nbsp;Riazul Islam,&nbsp;Yasir Arafat,&nbsp;Md. Zahid Hasan","doi":"10.1007/s10825-024-02276-0","DOIUrl":"10.1007/s10825-024-02276-0","url":null,"abstract":"<div><p>In this study, we explored the optimal performance of perovskite solar cells (PSCs) using the tin-halide material Rb₂SnI₆. This study focuses exclusively on the electrical properties of the devices, as simulated using SCAPS-1D software (solar capacitance simulator). The SCAPS-1D was employed to improve the device in the Rb₂SnI₆-based PSC, which utilized tungsten disulfide (WS₂) as the electron transport layer and cadmium telluride (CdTe) as the hole transport layer (HTL). To identify the most suitable electron transport layer (ETL), we initially investigated WS₂, SnS₂, PCBM, and C₆₀. The ITO/WS₂/ Rb₂SnI₆/CdTe/Ni structure proved to be the most effective ETL after extensive investigation, demonstrating a power conversion efficiency (PCE) of 24.95%, a Voc of 1.0896 V, a Jsc of 44.6795 mA cm², and an FF of 82.71%. Subsequently, we evaluated the impact of the absorber thickness, ETL thickness, and defect density on the device’s effectiveness in the Rb₂SnI₆, WS₂, and CdTe layers. We further investigated the effect of adjusting the interfacial defect densities at the CdTe/Rb₂SnI₆ and Rb₂SnI₆/WS₂ interfaces to optimize the device’s capabilities further. Additionally, we examined the proposed PSC’s quantum efficiency (QE), current density–voltage (J-V), shunt resistance, series resistance, capacitance–voltage, working temperature, and generation-recombination parameters. The results of these simulations provide valuable information for the excellent scientific fabrication of an inorganic PSC that is based on Rb₂SnI₆.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143110039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TiO2 and PbTiO3 assisted SPR biosensor for detection of malignancy in human-liver tissue with high sensitivity and figure of merit","authors":"Laxmi Jaiswal,&nbsp;Adarsh Chandra Mishra,&nbsp;Sapana Yadav,&nbsp;Pooja Lohia,&nbsp;D. K. Dwivedi,&nbsp;R. K. Yadav,&nbsp;Upendra Kulshrestha,&nbsp;Ammar M. Tighezza,&nbsp;M. Khalid Hossain","doi":"10.1007/s10825-025-02277-7","DOIUrl":"10.1007/s10825-025-02277-7","url":null,"abstract":"<div><p>A high performance Kretschmann configuration-based surface plasmons resonance (SPR) biosensor is proposed for the detection of hepatocellular carcinoma (HCC) liver tissues. The proposed structure consists of calcium fluoride (CaF₂) prism, silver (Ag) metal, and a heterojunction of titanium dioxide (TiO₂), lead titanate (PbTiO₃), and molybdenum di selenide (MoSe₂). Role of constituents materials is analyzed in terms of their contribution towards enhancement in the performance. At near infrared wavelength of 1000 nm, the thickness and number of layers of constituent layers is optimized in the light of practical realization. The proposed biosensor provides an ultrahigh sensitivity of 486 deg/RIU with a full-width half maximum (FWHM) of 1.0720 degrees and a figure of merits (FoM) of 453.35 RIU⁻¹. Further, the corresponding power-loss ratio is also calculated. Hence, the combined performance factor for the proposed sensor is 480.56 RIU⁻¹. The novelty of the work relies in the design and selection of material (especially TiO₂ and PbTiO₃) that offers the highest possible values of performance parameters for prism based sensor in the best of our knowledge.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142976385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TCAD analysis of single-event burnout caused by heavy ions for a GaN HEMT","authors":"Jian Li,&nbsp;Ying Wang,&nbsp;Xin-Xing Fei,&nbsp;Biao Sun,&nbsp;Yan-Xing Song,&nbsp;Meng-Tian Bao","doi":"10.1007/s10825-024-02275-1","DOIUrl":"10.1007/s10825-024-02275-1","url":null,"abstract":"<div><p>Based on simulation, this work introduces the single-event burnout (SEB) results of P-GaN gate AlGaN/GaN high electron mobility transistors (HEMTs) and proposes a hardened structure with a PN junction connected to the drain in the buffer layer. The simulation results indicate that the SEB mechanism of P-GaN gate AlGaN/GaN-HEMTs is mainly related to the charge enhancement and the impact ionization process dominated by the high-field region near the drain. Electrons in the high-field region between the gate and drain can gain sufficient energy and generate electron–hole pairs in the high-field region near the drain during the collection process. The avalanche ionization process triggered by these electrons leads to a rapid increase in the electric field, ultimately causing the peak electric field at the drain side to exceed the critical electric field of the material, resulting in SEB. The proposed hardened structure (H-HEMT) effectively improves the SEB threshold voltage by improving the electric field distribution near the drain. Under the condition of linear energy transfer (LET) of 0.6<span>(pC/mu m)</span> with heavy ion normal incidence, the SEB threshold voltage of the conventional structure (C-HEMT) is 230 V, while the H-HEMT can reach 420 V, showing better SEB resilience.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-01-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142963118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance comparison between current-mode signaling and voltage-mode signaling for multilayer graphene nanoribbon (MLGNR) interconnects","authors":"Fa Zou,&nbsp;Zhongliang Pan,&nbsp;Peng Xu","doi":"10.1007/s10825-024-02274-2","DOIUrl":"10.1007/s10825-024-02274-2","url":null,"abstract":"<div><p>Graphene nanoribbon (GNR) is emerging as a superior material for nanometer-scale interconnects, offering superior performance compared with traditional copper materials. To date, most research on GNR interconnects has focused on voltage-mode signaling (VMS) scheme, with little study on current-mode signaling (CMS) scheme. In this paper, we propose an equivalent circuit model of two-wire coupled multilayer graphene nanoribbon (MLGNR) interconnects using VMS and CMS schemes. Moreover, the model takes into account influence of temperature effect, coupling capacitive and mutual inductive. Performance of victim wire in two-wire coupled MLGNR and Copper (Cu) interconnects using VMS and CMS signaling schemes is investigated by applying the decoupling approach and ABCD parameter matrix method at local, intermediate, and global levels, respectively. In addition, the performance of MLGNR and Cu interconnects employing VMS and CMS systems is thoroughly compared and examined in this research. The results reveal that interconnects adopting the CMS scheme have less output voltage swing, less crosstalk delay, greater 3-dB bandwidth, and better signal integrity, compared to interconnects applying the VMS scheme, under the same conditions. With respect to noise, we observe that the CMS scheme has lower noise amplitude, smaller noise peak, and smaller noise width, resulting in greater noise immunity. Moreover, it is manifested that crosstalk delay, noise width, and 3 dB bandwidth are all temperature-dependent. As the temperature rises, both the delay and noise width increase, while the bandwidth decreases. In addition, the results indicate that MLGNR interconnects exhibit lower crosstalk delay, narrower noise width, larger bandwidth, and smaller dynamic power consumption compared to Cu interconnects under the same conditions. Furthermore, we discuss performance optimization methods for interconnects using both VMS and CMS schemes. Also, it is discovered that there is great agreement between the results of HSPICE simulations and those produced by the ABCD parameter matrix technique.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142939292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Monolayer blue phosphorene's potential for nucleobase detection: a computational study","authors":"Fatemeh Safari,&nbsp;Mahdi Moradinasab,&nbsp;Seyed-Mohammad Tabatabaei","doi":"10.1007/s10825-024-02261-7","DOIUrl":"10.1007/s10825-024-02261-7","url":null,"abstract":"<div><p>Adsorption of four canonical, two methylated, and one mutated nucleobases have been studied on single-layer blue phosphorene (SL-BlueP), including van der Waals interactions within density functional theory. Our calculations for electronic charge transfer demonstrate that all the considered bases undergo physisorption on SL-BlueP with a charge transfer within the range of -0.004 to + 0.024 |<i>e</i>|. The work function of SL-BlueP decreases by 0.08, 0.10, and 0.19 upon adsorption of adenine, cytosine, and guanine, respectively, and its bandgap can be shrunk by as much as 36%. Interestingly, the current–voltage (I-V) curves show characteristic responses depending on the type of nucleobases. Furthermore, the adsorption of nucleobase molecules on SL-BlueP gives rise to distinct energy loss spectra. The obtained distinguishable features may be used for ultraselective detection of DNA nucleobases.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142939291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly efficient XCoSi (X=V, Nb, Ta) compounds for thermoelectricity: a density functional theory approach","authors":"O. R. Jolayemi,&nbsp;G. M. Mule,&nbsp;O. T. Uto,&nbsp;O. C. Olawole","doi":"10.1007/s10825-024-02273-3","DOIUrl":"10.1007/s10825-024-02273-3","url":null,"abstract":"<div><p>Half-Heusler compounds hold great promise for thermoelectricity due to their excellent thermal stability and electronic transport properties. This study unveils the physical characteristics of half-Heusler compounds XCoSi (X = V, Nb, Ta) as potential materials for thermoelectric using the Quantum ESPRESSO and PHONOPY codes with PBEsol-GGA correlation functional. The electronic band structure calculations revealed the semiconducting nature of the compounds with an indirect band gap (X <span>(rightarrow )</span> W) of size 0.55 eV, 0.84 eV, and 1.25 eV for VCoSi, NbCoSi, and TaCoSi, respectively. The XCoSi(X=V, Nb, Ta) compounds demonstrate dynamic and mechanical stability, with ionic bonds and predicted ductility of these alloys. Additionally, critical parameters for thermoelectric application are computed, including the Seebeck coefficient (<i>S</i>), electrical conductivity (<span>(sigma )</span>), thermal conductivity (<span>(kappa )</span>), and the figure of merit (ZT). At room temperature, both p-type and n-type XCoSi (X = V, Nb, Ta) exhibit figure of merit values close to unity: 0.96 for VCoSi, 0.98 for NbCoSi, and 0.99 for TaCoSi, based solely on the electronic contribution to thermal conductivity. Including the lattice thermal conductivity provides a more accurate assessment of the thermoelectric potential of XCoSi (X = V, Nb, Ta). Among them, VCoSi shows greater potential for thermoelectric applications compared to TaCoSi and NbCoSi.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Neural network implementation for smart medical systems with double-gate MOSFET","authors":"Epiphany Jebamalar Leavline,&nbsp;Krishnasamy Vijayakanth","doi":"10.1007/s10825-024-02246-6","DOIUrl":"10.1007/s10825-024-02246-6","url":null,"abstract":"<div><p>The implementation of a neural network on very large-scale integrated (VLSI) circuits provides flexibility in programmable systems. However, conventional field-programmable gate array (FPGA) neural chips suffer from longer computation times, higher costs, and greater energy consumption. On the other hand, multilayer perceptron (MLP) network implementation over VLSI exhibits increased speed with a smaller chip size and reduced cost. This work aims to implement an MLP neural network using double-gate metal oxide semiconductor field effect transistors (DGMOSFETs) functioning as neurons. The suggested network architecture is offered as a package utilizing very high-speed integrated circuit hardware description language (VHDL). The weights of the MLP are obtained by training a neural network with electrocardiogram (ECG) signals taken from the PhysioNet database. The ECG input signals, obtained weights and bias, are given to the designed MLP for testing. The classification accuracy of this trained neural network is 94.48%. A power analysis is also conducted for the hardware-designed MLP to validate the power reduction performance. In terms of speed, the required number of components and power, the performance of this design employing DGMOSFET outperforms its single-gate MOSFET (SGMOSFET) counterpart.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142906116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}