Journal of Computational Electronics最新文献

Analytical performance of a 2D photonic crystal nanocavity sensor for hemoglobin concentration measurement 用于血红蛋白浓度测量的二维光子晶体纳米腔传感器的分析性能

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-08 DOI: 10.1007/s10825-026-02548-x

Shivesh Kumar, Mrinal Sen, Haraprasad Mondal, Himanshu Ranjan Das

{"title":"Analytical performance of a 2D photonic crystal nanocavity sensor for hemoglobin concentration measurement","authors":"Shivesh Kumar, Mrinal Sen, Haraprasad Mondal, Himanshu Ranjan Das","doi":"10.1007/s10825-026-02548-x","DOIUrl":"10.1007/s10825-026-02548-x","url":null,"abstract":"<div><p>This study presents a two-dimensional photonic crystal nanocavity biosensor design that incorporates holes within a silicon slab to detect the hemoglobin concentration in blood. Since the refractive index of blood varies linearly with hemoglobin concentration, examining samples with different refractive indices enables accurate quantification of hemoglobin levels. The performance of the sensor is evaluated using the finite-difference time-domain (FDTD) method to observe resonance wavelength shifts at the output port for different blood analytes. Additionally, the photonic band structure is examined through the plane-wave expansion (PWE) method. Variations in the refractive indices of blood components result in corresponding shifts in resonant wavelength and output power. The sensor is designed to precisely measure and monitor hemoglobin concentration for clinical and diagnostic applications while maintaining a simplified fabrication process for enhanced efficiency and cost-effectiveness. The proposed device demonstrates excellent sensing performance, with a high sensitivity of 789.5 nm/RIU, a high quality factor of 1.5254<span>(times)</span>10<span>(^textrm{5})</span>, a low detection limit of 1.282<span>(times)</span>10<span>(^{-6})</span> RIU, and an impressive figure of merit of 7.80065<span>(times)</span>10<span>(^textrm{4})</span> RIU <span>(^mathrm{-1})</span>. The device demonstrates reliable performance throughout temperatures ranging from 0 to 90 <span>(^{circ })</span>C. Furthermore, considering the susceptibility of photonic crystal structures to fabrication imperfections, the study includes an in-depth evaluation of their impact on sensor performance to ensure reliability in real-world applications. With its compact footprint of 95.48 <span>(mu text {m}^2)</span> and excellent sensing capabilities, the proposed biosensor is well-suited for label-free medical diagnostics and photonic integrated circuits.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147829770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A reliable black-hole optimization-based approach for modeling of GaN high electron mobility transistors 基于黑洞优化的GaN高电子迁移率晶体管建模方法

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-08 DOI: 10.1007/s10825-026-02550-3

Anwar Jarndal

{"title":"A reliable black-hole optimization-based approach for modeling of GaN high electron mobility transistors","authors":"Anwar Jarndal","doi":"10.1007/s10825-026-02550-3","DOIUrl":"10.1007/s10825-026-02550-3","url":null,"abstract":"<div><p>This paper presents a black-hole optimization (BHO) based parameters extraction method. The developed method was applied on distributed small-signal equivalent circuit models of GaN HEMT. The BHO as a global technique generates initial values for the model elements that can be tuned in a later step using gradient or simplex local optimization. The reliability of extraction was improved by using measurement-based boundaries for the initially generated candidate solutions. Physics-based restriction conditions were implemented through the optimization process to avoid any nonrealistic values. The developed procedure was demonstrated by modeling different sizes devices on SiC, Diamond and Si substrates at different bias conditions. The modeling accuracy was validated by means of S-premasters simulations, which show a very good fitting to measured data. The extracted values of the models’ elements are consistent with the devices physics and scaling well with the device size. In general, the results obtained prove the applicability of the proposed approach for small-modeling and liner circuit design and providing an accurate and physically consistent framework within the operating conditions considered.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147829778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient terahertz polarization rotator using L-Shaped waveguide l型波导的高效太赫兹偏振旋转器

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-03 DOI: 10.1007/s10825-026-02544-1

Nagat A. Elmahdy, Mohamed Farhat O. Hameed, S. S. A. Obayya, B. M. Younis

{"title":"Efficient terahertz polarization rotator using L-Shaped waveguide","authors":"Nagat A. Elmahdy, Mohamed Farhat O. Hameed, S. S. A. Obayya, B. M. Younis","doi":"10.1007/s10825-026-02544-1","DOIUrl":"10.1007/s10825-026-02544-1","url":null,"abstract":"<div><p>The polarization rotator (PR) is an optical device designed to rotate the polarization of light from one orientation to another, enabling efficient polarization control in integrated photonic circuits. Terahertz (THz) technology requires precise polarization control for high-speed communication and sensing, yet achieving high extinction ratios in compact footprints remains a significant challenge. To address this, a THz-PR based on L-shaped waveguide is designed and numerically analyzed. The proposed PR structure consists of a polyethylene substrate and cladding material, while the core region is made of gallium arsenide (GaAs) material. The modal and propagation characteristics of the presented PR are evaluated by the full vectorial finite-difference method (FVFDM) and mode matching technique, respectively. The geometrical parameters are studied to attain a compact design with minimum crosstalk (CT) where the propagation analysis is performed through the mode matching technique. At an operating frequency of 1.0 THz, the device achieves a high conversion ratio of 99% over a conversion length of about 7.7 mm with low CT = − 22.83 dB. Additionally, the designed waveguide structure shows robust fabrication tolerance, confirming the design’s practical applicability within the THz spectrum. The large conversion efficiency effectively solves the common trade-off between device footprint and signal quality. Therefore, the presented PR serves as a reliable building block for the THz polarization handling devices and systems.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147829259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of the effect of heavy ion radiation on the transient behaviour for split oxide heterojunction double gate tunnel FETs 重离子辐射对分裂氧化物异质结双栅隧道场效应管瞬态行为的影响分析

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-04-27 DOI: 10.1007/s10825-026-02543-2

Angothu Saida, Dipjyoti Das, Rajesh Saha

{"title":"Analysis of the effect of heavy ion radiation on the transient behaviour for split oxide heterojunction double gate tunnel FETs","authors":"Angothu Saida, Dipjyoti Das, Rajesh Saha","doi":"10.1007/s10825-026-02543-2","DOIUrl":"10.1007/s10825-026-02543-2","url":null,"abstract":"<div><p>In this work, we have designed a split oxide heterojunction double-gate tunnel field effect transistor (SOHJDG TFET) using the Sentaurus TCAD simulator. The splitting of the gate dielectric leads to reduced power consumption, and the presence of the heterojunction improves the tunnelling rate. The effect of heavy ion strike on the device characteristics is an important consideration for applications in space. Therefore, we examine the effect of heavy ion strikes at different locations including the source, source/channel junction, channel, channel/drain junction, and drain regions for the SOHJDG TFET. We further investigate the impact of the heavy ion incidence angle (Φ) = 0°, 30°, 45°, 60°, 90° on the transient behaviour in the SOHJDG TFET. The energy deposited by heavy ions is another significant parameter for space applications. Therefore, the effect of linear energy transfer (LET) on electrical parameters is further analysed for the SOHJDG TFET. Maximum transient drain current of 22,000 µA is obtained when the strike is considered in the channel region at an incidence angle of 90° with LET = 20 MeV cm<sup>2</sup>/mg.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147796887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bandgap prediction of binary compounds via a machine learning approach utilizing gradient boosting regression 利用梯度增强回归的机器学习方法预测二元化合物的带隙

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-04-27 DOI: 10.1007/s10825-026-02547-y

Mauludi Ariesto Pamungkas, Annida Erly Rofiah, Agus Naba

引用次数: 0

3D thermal analysis at transistor level based on IC layout files 基于IC布局文件的晶体管级三维热分析

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-04-25 DOI: 10.1007/s10825-026-02546-z

Kaili Ding, Kai Sun, Maozheng Liu, Haihang Cui

引用次数: 0

Sensitivity enhancement of surface plasmon resonance sensor for cancerous cell detection for breast Type I and Type II using the Kretschmann–Raether structure 利用Kretschmann-Raether结构增强表面等离子体共振传感器检测乳腺I型和II型癌细胞的灵敏度

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-04-24 DOI: 10.1007/s10825-026-02542-3

Bhishma Karki, Youssef Trabelsi, Manoj Kumar, Malatesh Akkur, S. Emalda Roslin, Basanta Kumar Panigrahi, Amrindra Pal

{"title":"Sensitivity enhancement of surface plasmon resonance sensor for cancerous cell detection for breast Type I and Type II using the Kretschmann–Raether structure","authors":"Bhishma Karki, Youssef Trabelsi, Manoj Kumar, Malatesh Akkur, S. Emalda Roslin, Basanta Kumar Panigrahi, Amrindra Pal","doi":"10.1007/s10825-026-02542-3","DOIUrl":"10.1007/s10825-026-02542-3","url":null,"abstract":"<div><p>Improving treatment outcomes and survival rates depends on the successful and timely detection of cancer biomarkers. For this study, we have designed a multilayer sensor structure based on the Krestchmann–Raether sensor structure using Silver (Ag), Platinum diselenide (PtSe<sub>2</sub>), and Cerium Trifluoride (CeF<sub>3</sub>) layers to simulate a highly sensitive Surface Plasmon Resonance (SPR) sensor. The structure was modelled for its optical properties using the Transfer matrix technique (TMT) and angle interrogation technique. The sensitivity analysis was done for two targeted breast cancer cell lines (Type I & II), known as MCF-7 and MDA-MB (MM-231). The sensitivity of 212.85 degree/RIU and 211.42 degree/RIU was achieved for Breast cancer Type II (MM-231) and Type I (MCF-7), respectively, and their respective figures of merits (FoM) of 24.2 RIU<sup>−1</sup> and 22.19 RIU<sup>−1</sup>. This paper presents the significance and novelty of this new-designed SPR structure for its applicability and sensitivity for practical uses in biomedical applications, including cancer diagnostics of the future.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147738862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum-dot cellular automata-based approximate CSA and RBS with ultra-low cells 基于量子点元胞自动机的超低单元近似CSA和RBS

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-04-20 DOI: 10.1007/s10825-026-02528-1

Saeid Seyedi, Hatam Abdoli

{"title":"Quantum-dot cellular automata-based approximate CSA and RBS with ultra-low cells","authors":"Saeid Seyedi, Hatam Abdoli","doi":"10.1007/s10825-026-02528-1","DOIUrl":"10.1007/s10825-026-02528-1","url":null,"abstract":"<div><p>Quantum-dot Cellular atomaton (QCA) have received considerable interest as a nanoscale computing solution because of its potential for high device density, low power consumption, and lower latency compared to CMOS technology. On the other hand, approximate computing takes advantage of the error tolerance of many applications to achieve lower hardware complexity and power dissipation. In this paper, five single-layer and I/O-accessible approximate arithmetic circuits for QCA are proposed: a full adder (FA), a full subtractor (FS), a full adder/subtractor (FA/S), a carry save adder (CSA), and a ripple borrow subtractor (RBS). The proposed FA and FS circuits require nine cells with 0.01 µm<sup>2</sup> area and 0.5 clock-phase latency, while the proposed FA/S circuit requires ten cells with 0.01 µm<sup>2</sup> area and 0.5 clock-phase latency. Based on the proposed primitives, the proposed CSA circuit requires 36 cells with 0.04 µm<sup>2</sup> area and 0.5 clock-phase latency, while the proposed RBS circuit requires 48 cells with 0.04 µm<sup>2</sup> area and 3.5 clock-phase latency. Functional verification is carried out using QCADesigner, and the reported waveforms include the polarization scales (Pmin/Pmax). Robustness is measured in terms of Average Output Polarization (AOP) with respect to temperature variations (<i>T</i> = 1–9 K, step = 2 K), which depicts the expected degradation process while keeping the polarization values within acceptable limits. Furthermore, gate-level QCA cost is measured with respect to four different weighting schemes, and energy dissipation is calculated using QCADesigner-<i>E</i>. The total energy dissipated by the proposed FA/FS is 1.59 × 10<sup>−6</sup> eV (Avg_Ebath = 1.44 × 10<sup>−7</sup> eV/cycle), whereas the proposed FA/S dissipates 1.76 × 10<sup>−6</sup> eV (Avg_Ebath = 1.60 × 10<sup>−7</sup> eV/cycle). In summary, the proposed ultra-low-cell-count single-layer structures offer energy-efficient, low-latency.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147714843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Chiral-edge engineering of M-graphene nanoribbons: edge-localized states, suppressed transmission and width-tunable transport device m -石墨烯纳米带的手性边缘工程：边缘定域态、抑制传输和宽度可调传输装置

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-04-15 DOI: 10.1007/s10825-026-02541-4

Francenildo Baia Reis, Jordan Del Nero

{"title":"Chiral-edge engineering of M-graphene nanoribbons: edge-localized states, suppressed transmission and width-tunable transport device","authors":"Francenildo Baia Reis, Jordan Del Nero","doi":"10.1007/s10825-026-02541-4","DOIUrl":"10.1007/s10825-026-02541-4","url":null,"abstract":"<div><p>We report an atomistic investigation of M-graphene nanoribbons with chiral (mixed-topology) edges, focusing on how alternating zigzag-like and armchair-like motifs determine low-energy electronic structure and quantum transport. Using first-principles electronic-structure calculations combined with atomistic quantum-transport simulations, we find that M-graphene ribbons maintain an overall metallic density of states while exhibiting a narrow, motif-specific “forbidden subband” located near the Fermi level that arises from edge-localized states. In narrow ribbons this forbidden subband produces pronounced resonant scattering and a clear suppression of low-bias conductance; increasing ribbon width progressively populates additional propagating subbands, broadens transmission features, and restores more continuous, near-linear low-bias I–V behavior. The contrast between edge-dominated resonances and bulk-like conduction is robust across the width series studied and indicates that chiral/mixed edges provide an effective structural handle to tune energy-selective transport. These properties make chiral M-graphene nanoribbons promising candidates for resonance-based electronic elements and edge-engineered sensors. Under conditions where edge magnetism can be stabilized (for example via chemical functionalization, substrate effects, or explicit inclusion of strong correlations), the motif-localized states identified here could in principle enable spin-selective behavior; however, spin effects are not modeled in the present work and would require a dedicated spin-resolved study.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 2","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-026-02541-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147737631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic field and temperature dependent band gap modeling in narrow-gap quantum well semiconductors 窄隙量子阱半导体中磁场和温度相关带隙建模

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-04-13 DOI: 10.1007/s10825-026-02540-5

Ulugbek Erkaboev, Rustamjon Rakhimov, Jasurbek Mirzaev, Nozimjon Sayidov, Muzaffar Dadamirzaev, Qudratali Temirov

引用次数: 0