Journal of Computational Electronics最新文献

{"title":"On-chip silicon nanorod array-based Bi-cavity biosensor for multi-disease detection","authors":"Shivesh Kumar,&nbsp;Akash Kumar Pradhan,&nbsp;Priyanka Kumari","doi":"10.1007/s10825-026-02653-x","DOIUrl":"10.1007/s10825-026-02653-x","url":null,"abstract":"<div><p>A compact two-dimensional photonic crystal (2D-PhC) nanocavity biosensor based on a silicon-rod triangular lattice is proposed for the detection of cancer cells, blood components, and glucose concentrations in urine. The novelty of the proposed design lies in the systematic optimization of the sensing-rod radius to achieve an effective balance between optical confinement, resonance quality, and refractive-index sensitivity, thereby enabling simultaneous high-Q and high-sensitivity operation in a compact photonic structure. The band structure is obtained using the plane-wave expansion (PWE) technique, while the sensor performance is evaluated using the finite-difference time-domain (FDTD) method. To evaluate the device behavior, transmission spectra and the corresponding resonance wavelength shifts are thoroughly examined. Analyte detection is based on monitoring refractive index variations of different analytes under excitation from a 1550 nm light source. Furthermore, the influence of the detection rod radius (<span>(R_D)</span>) is systematically explored to achieve optimal performance. The proposed sensor demonstrates superior characteristics, achieving a high quality factor of 8.6399<span>(times)</span>10<span>(^{textrm{5}})</span> and a high sensitivity of 800 nm/RIU. It also attains a high figure of merit of 4.151<span>(times)</span>10<span>(^{textrm{5}})</span> RIU<span>(^{mathrm{-1}})</span> and a detection limit of 2.409<span>(times)</span>10<span>(^{mathrm{-7}})</span> RIU, indicating its strong sensing capability. The impact of fabrication variations is further analyzed, showing a significant tolerance to imperfections of up to 20 nm, indicating high fabrication yield and practical feasibility. Finally, the compact footprint of 105 <span>(mu text {m}^2)</span> makes the device well-suited for integration into photonic chips and diverse sensing platforms.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 6","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149214582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Computational analysis of anchoring-group-dependent conductance superposition and deviations from classical additivity in π-conjugated molecular junctions","authors":"Abdullah Alshehab","doi":"10.1007/s10825-026-02650-0","DOIUrl":"10.1007/s10825-026-02650-0","url":null,"abstract":"<div><p>In this DFT-based theoretical study, I investigate the conductance superposition in π-conjugated molecular junctions containing single- and double-backbone transport pathways terminated with thiol (–SH), amine (–NH₂), and direct carbon (–C) anchoring groups. The electrical conductance is evaluated using density functional theory combined with quantum transport calculations to systematically compare the transport properties of single- and double-backbone molecular junctions. The results demonstrate that introducing a second molecular backbone consistently enhances the electrical conductance through constructive quantum interference between parallel transport pathways. However, the magnitude of this enhancement depends strongly on both the molecular structure and the anchoring groups, leading to systematic deviations from classical conductance additivity. Quantitative comparison with the classical (<span>({2G}_{1})</span>) and ideal quantum (<span>({4G}_{1})</span>) reference models shows that the conductance of double-backbone junctions consistently exceeds the classical limit while remaining below or approaching the ideal quantum limit, depending on the molecular system and anchoring group. For thiol-anchored junctions, the predicted conductance trends are in good agreement with previously reported scanning tunneling microscopy break-junction measurements, supporting the predictive capability of the computational approach. Overall, this study establishes a general computational framework for evaluating conductance superposition in molecular junctions and demonstrates that coherent quantum interference, together with molecular structure and anchoring chemistry, governs charge transport beyond the predictions of classical circuit theory. These findings provide fundamental insight into charge transport in molecular-scale electronic systems and offer design guidelines for the development of future high-conductance molecular junctions based on multi-pathway architectures.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-026-02650-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analytical modelling of In0.25Ga0.75N nanowire HEMT utilizing FEM analysis and SRH recombination for breast cancer biomolecule","authors":"N. Anbuselvan,&nbsp;L. Lee,&nbsp;Kah-Yoong Chan","doi":"10.1007/s10825-026-02649-7","DOIUrl":"10.1007/s10825-026-02649-7","url":null,"abstract":"<div><p>This work establishes a finite element drift–diffusion framework that integrates polarization sheet charge boundary conditions and Shockley–Read–Hall (SRH) recombination to accurately model an InGaN nanowire HEMT biosensor. The formation of the two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) is a result of both spontaneous and piezoelectric polarization at the subband discontinuities of the InGaN/GaN interface. Analysis reveals that the overall effect of the 2DEG and 2DHG significantly influences the filling of quantum levels, with maximum sheet carrier charge densities of approximately 1.5 × 10⁻¹³ cm⁻² occurring at a distance of 2 nm, followed by a secondary peak around 13.5 nm. The electrostatic potential assessments indicate a notable energy band bending of − 3.0 eV at 5 nm at the heterojunction interface. The sheet density is calculated using a combination of Schrödinger–Poisson equations and quantum-corrected drift–diffusion methods, which are then integrated over the confinement region. The biosensing mechanism is effectively incorporated as a surface charge density at the gate dielectric’s top boundary, resulting in a threshold voltage shift that is influenced by quantum, electrostatic effects and the charge density profile. The coupled system comprises Poisson’s equation along with continuity equations for both holes and electrons. This setup includes drift–diffusion currents and SRH recombination, while the interface jump conditions necessitate the inclusion of polarization charges. By meticulously parameterizing material properties such as subband offsets, effective sheet carrier densities, total polarization constants, mobilities and trap lifetimes, the simulation successfully reproduces I_d–V_g characteristics, 2DEG/2DHG distributions, electrostatic effects, charge density profiles, as well as wave functions and wave probability density functions corresponding to quantum energy levels relevant to breast cancer-related biomolecular interactions. This comprehensive modelling framework lays the foundation for advancing the design and effectiveness of biosensors aimed at detecting critical biomolecular signals.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-026-02649-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149189145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In silico optimization of a quartz crystal microbalance immunosensor for CYFRA 21–1 detection: a comparative analysis of Langmuir and first-order binding kinetics for early non-small cell lung-cancer screening","authors":"Muhammad Farazam Maleeq,&nbsp;Muhammad Rayyan,&nbsp;Muzamil Nazeer,&nbsp;Hira Niazi,&nbsp;Najam us Sahar Sadaf Zaidi,&nbsp;Muhammad Imran Khan","doi":"10.1007/s10825-026-02648-8","DOIUrl":"10.1007/s10825-026-02648-8","url":null,"abstract":"<div><p>Non-small cell lung cancer (NSCLC) makes up the bulk of lung malignancies and is most often identified only after the disease has advanced, when curative options are scarce and prognosis is poor. CYFRA 21–1, a soluble fragment of cytokeratin 19 shed into the bloodstream during epithelial tumor-cell turnover, is a well-established serum indicator of NSCLC and an attractive target for minimally invasive screening. In this work, we construct an in silico model of a quartz crystal microbalance (QCM) immunosensor for CYFRA 21–1 and use it to probe how the choice of binding kinetics and the density of immobilized antibody together shape the sensor response. Capture of the antigen was simulated at the following analyte concentrations (1, 5, 10, 25, 50, 75 and 100 ng/mL) and three fractions of the theoretical maximum antibody density (10%, 50% and 100%) under two kinetic descriptions, the Langmuir adsorption model and a first-order binding model, producing 84 runs in total in Python 3.9. The Langmuir formulation, which imposes a finite pool of binding sites and reversible association, reproduced surface saturation and returned frequency-shift predictions in line with the physical behavior of a QCM, whereas the first-order model, having no saturation constraint, consistently overstated the response. At 10% antibody coverage, the modeled device reached a limit of detection of 0.014 ng/mL over a linear window of 1–100 ng/mL (R² &gt; 0.9999). Fractional site occupancy stayed under 2% throughout, keeping the sensor within the Henry region of the isotherm and guaranteeing a proportional, predictable signal even at trace analyte levels. Collectively, these findings supply a quantitative design basis for inexpensive, reusable QCM platforms intended for early NSCLC detection.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149132017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of photovoltaic aging on power quality: THD-based evaluation with respect to the IEEE 519-2022 standard","authors":"Meriem Farou,&nbsp;Abdelhak Djellad,&nbsp;Sofiane Chiheb,&nbsp;Hala Lalaymia,&nbsp;Pierre-Olivier Logerais,&nbsp;Ali Khouzam,&nbsp;Mahamadou Abdou Tankari","doi":"10.1007/s10825-026-02640-2","DOIUrl":"10.1007/s10825-026-02640-2","url":null,"abstract":"<div><p>Solar photovoltaic (PV) energy is regarded as one of the most promising sources for the transition toward sustainable electricity generation. However, the long-term performance of PV modules is affected by progressive degradation, which reduces not only their power output, but may also alter the power quality of the complete conversion system. This study investigates the long-term effects of the PV module aging on the electrical performance and the current Total Harmonic Distortion (THD_<i>i</i>) of a standalone PV system. Aging is simulated through established degradation laws applied to three key parameters of the single-diode model: the optical transmittance of the semi-transparent upper layer, the series resistance and the shunt resistance. A comprehensive MATLAB/Simulink model, including the PV module, a DC–DC converter, a MPPT controller, a DC–AC inverter, a LC filter, and a resistive load, is used to determine the voltage, the current, the power, and the harmonic spectrum evolution over a 50-year simulation horizon. The combined effects of aging and operating temperature are also investigated. The results show that the PV module output power decreases from 238.5 W in the initial state to 149.1 W after 50 years, corresponding to a loss of approximately 37.5%, while the inverter output current THD_<i>i</i> increases from 2.17 to 13.63%. A configuration-dependent transition occurs between years 32 and 33, when the THD_<i>i</i> rises from 4.51 to 5.91% and exceeds the 5% comparative benchmark adopted with reference to IEEE 519-2022. Elevated temperatures further amplify harmonic distortion in aged operating conditions, with the THD_<i>i</i> reaching 18.87% after 50 years at 75 °C. Frequency domain analysis reveals that the degradation is associated not only with an increase in the overall distortion, but also with a redistribution of spectral energy toward the lower-frequency harmonics, the interharmonics, and the modulation sidebands. This evolution is quantitatively characterized by decreases in the spectral centroid and spectral entropy. These findings demonstrate the potential of combined THD_<i>i</i> and spectral indicators as indirect features for the PV system condition monitoring and the predictive maintenance. Nevertheless, an experimental validation is required before the proposed indicators and the aging threshold can both be generalized to other PV technologies, converter configurations and operating conditions.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling of random telegraph noise decay constant in 3D NAND flash memory using machine learning-based Monte Carlo simulation","authors":"Eunseok Oh,&nbsp;Hyungcheol Shin","doi":"10.1007/s10825-026-02647-9","DOIUrl":"10.1007/s10825-026-02647-9","url":null,"abstract":"<div><p>Random telegraph noise (RTN) has emerged as a major reliability concern in high-density 3D NAND flash memory, causing significant threshold voltage (<i>V</i>_t) distribution distortion. While technology computer-aided design (TCAD) simulations provide physical insights, they face fundamental limitations in capturing the statistical randomness of grain boundaries and traps due to high computational costs. In this study, we design the RTN decay constant (<i>λ</i>) model in 3D NAND using artificial neural networks (ANN) and Monte Carlo simulation. Our analysis reveals that unlike 2D NAND or single-Si 3D NAND, poly-Si channel 3D NAND exhibits average trap number dependent (<i>μ</i>_trap) scaling behavior due to percolation effects induced by GBs. Specifically, we find that the scaling sensitivity of cell variations directly influencing channel volume, such as word-line length (<i>L</i>_WL) and poly-Si channel thickness (<i>T</i>_poly), decreases as the <i>μ</i>_trap increases. Furthermore, we demonstrate that <i>λ</i> in 3D NAND is proportional to the cubic root of <i>μ</i>_trap (<i>λ</i> <span>(alpha sqrt[3]{{mu}_{text{t}text{r}text{a}text{p}}})</span>), a deviation from the square-root dependency observed in 2D NAND. These results provide a robust numerical model and essential design guidelines for predicting the reliability of 3D NAND flash memory devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-026-02647-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149133308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Studying optical properties of Frӧhlich polaron in quantum wire with Rashba and Dresselhaus spin–orbit interaction","authors":"Ahmad Ghanbari","doi":"10.1007/s10825-026-02643-z","DOIUrl":"10.1007/s10825-026-02643-z","url":null,"abstract":"<div><p>In the present work, we have studied the optical properties of the one-dimensional Fröhlich polaron in CdSe quantum wire in the presence of Rashba and Dresselhaus spin–orbit interactions. The properties are such as refractive index changes, absorption coefficient, second-harmonic generation and third-harmonic generation. To this end, we have numerically determined the effect of interactions on the polaron energy of the nanowire using Lee-Low-Pines variational method and have obtained the optical properties for the intersubband transitions between the electronic states of the nanowire using the compact density matrix formalism. Our results show that linear and nonlinear terms of absorption coefficient and refractive index changes have opposite signs. Also, we have investigated that the physical parameters have a significant effect on the optical properties of the nanowire.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149132609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of non-uniform triple silicon quantum dots on single electron transistor performance","authors":"Sherif M. Tawfik,&nbsp;Nihal Y. Ibrahim,&nbsp;Nadia H. Rafat","doi":"10.1007/s10825-026-02646-w","DOIUrl":"10.1007/s10825-026-02646-w","url":null,"abstract":"<div><p>Single electron transistors (SETs) are pivotal in nanoelectronics due to their potential for ultra-low-power consumption and high sensitivity, although under the restriction of cryogenic operation temperature. Recently, experimental evidence suggested that triple quantum dot (QD) SET can show single electron transport around room temperature. However, the manufacturing technique suggested experimentally does not allow the exact control of each QD dimensions, opening the door to relative randomness in the relative dimensions of the QDs. This work presents a simulation study of triple silicon (Si) quantum dot (QD) SETs. The study involves two simulation stages: QD and device simulations to extract energy levels and capacitances, followed by Monte Carlo simulation to study the electron tunneling and transport. Our simulation approach of a triple Si QD design is validated against experimental results. Thereafter, we explore the effect of non-uniformity in the dimensions of the triple Si QDs and its impact on SET performance. This work provides valuable insights for researchers designing SETs. Our findings contribute to the advancement of SET design and manufacturing, potentially benefiting future nanoelectronic applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149132610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spin filtering in heterojunction devices with zigzag silicon carbide nanoribbons","authors":"Xiangyang Zhu,&nbsp;JiangXue Huang,&nbsp;Ao Wu,&nbsp;Ruiqing Cheng,&nbsp;Hao Wang,&nbsp;Sheng Chang","doi":"10.1007/s10825-026-02644-y","DOIUrl":"10.1007/s10825-026-02644-y","url":null,"abstract":"<div><p>Spin-dependent transport in zigzag silicon carbide nanoribbon (ZSiCNR) heterojunction devices is investigated using first-principles calculations combined with the nonequilibrium Green’s function (NEGF) method. In the ferromagnetic configuration, the conducting states near the Fermi level are spatially separated at the two inequivalent ribbon edges: The spin-up channel is mainly localized at the Si-terminated edge, whereas the spin-down channel is mainly localized at the C-terminated edge. This edge localization enables geometry-selected spin filtering. When an armchair-edged width modulation is introduced at the Si or C edge, the corresponding edge channel is selectively scattered, while the opposite edge channel remains conductive. The 4-Si_edge and 4-C_edge devices therefore act as complementary spin filters with opposite, but structurally fixed, spin polarizations, and their calculated spin-filtering efficiencies approach 100% over the studied bias range. The pristine <span>(N_A=0)</span> reference and the dependence on armchair-edge length further show that the filtering originates from edge-selective scattering and becomes stronger as the modulated edge segment increases. Similar spin-selective suppression is also obtained in width-modulated central region structures with triangular edge defects. These results suggest a dopant-free and field-free route for controlling spin-polarized transport in ZSiCNR heterojunctions through edge geometry.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149132669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and analysis of AD844-based memristor emulator circuits using advanced window function models","authors":"Om Kansara,&nbsp;Harsh Rajan,&nbsp;Bablu Kumar Singh,&nbsp;Ajay Kumar Vyas,&nbsp;Saurabh Kumar Pandey","doi":"10.1007/s10825-026-02645-x","DOIUrl":"10.1007/s10825-026-02645-x","url":null,"abstract":"<div><p>Memristors, considered to be the fourth fundamental circuit element, have attracted significant attention in research due to their possible applications in neuromorphic computing, non-volatile memory, and other analog signal processing networks. Several mathematical models have been proposed to capture the behavior of the memristor, but practical limitations, such as boundary effects, lack of nonlinearity, and distorted pinched hysteresis loops limit their physical reliability. In this article, window function–based models have been introduced to overcome these issues, from linear models to multi-parameter nonlinear formulations that can emulate real device behavior. The work in this article shows the design and analysis of memristor emulator circuits based on well-established linear and window function models, implemented using the AD844 operational amplifier (op-amp). The unique current conveyor (CCII⁺) characteristics of the op- amp enabled by its TZ pin make it suitable for accurately reproducing the pinched hysteresis behavior of memristive devices without complex external circuitry. Comparative analysis of alternative op-amps is also discussed to verify the selection of AD844. The simulation results demonstrated using the I–V characteristic of hysteresis loops for both linear and nonlinear window function models, which validate the effectiveness of the proposed emulator circuits. This leads to a cost-effective and practical platform for memristor device modeling.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149132608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}