Journal of Computational Electronics最新文献

{"title":"Modelling and analysis of a negative capacitance junctionless FinFET with ferroelectric spacer: a paradigm shift in low power electronics","authors":"Shelja Kaushal","doi":"10.1007/s10825-025-02334-1","DOIUrl":"10.1007/s10825-025-02334-1","url":null,"abstract":"<div><p>This article proposes an analytical model for the threshold voltage of a negative capacitance junctionless FinFET (NC-JL FinFET) with ferroelectric spacer. In the proposed study the new concept of ferroelectric as a gate dielectric as well as spacer is introduced with a NC-JL FinFET as a noteworthy development in the field of low-power electronics. The effect of fringing field due to the source/drain ferroelectric spacer on the potential distribution function and threshold voltage has been taken into consideration. The effect of the ferroelectric as a spacer on the surface potential and threshold voltage for a NC-JL FinFET is analysed and compared with a dielectric as the spacer. The results of the proposed models are also validated and compared with simulated results of Sentaurus TCAD device simulator. Further we have compared the ON and OFF current, ION/IOFF ratio, Subthreshold Slope (SS) etc. of the ferroelectric and dielectric as spacer for the NC-JL FinFET. Furthermore, its performance has been analysed for different spacer lengths, Fin thickness and spacer length.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigating the impact of nanoparticle-embedded layers on amorphous silicon thin-film solar cell performance: a comparative simulation study","authors":"Songryong Pak,&nbsp;Iljin Pak,&nbsp;Unchol Kim,&nbsp;Bom Ryu","doi":"10.1007/s10825-025-02328-z","DOIUrl":"10.1007/s10825-025-02328-z","url":null,"abstract":"<div><p>This study presents a numerical analysis evaluating the performance of plasmonic amorphous silicon thin-film solar cells incorporating nanoparticles of diverse types, shapes, and sizes. The simulations were performed using the semiconductor simulator SILVACO TCAD, which allowed for the design and optimization of nanoparticle structures within the solar cells. The results indicated that the highest short-circuit current and external quantum efficiency were achieved when aluminum nanoparticles were used, with silicon oxide as the surrounding medium, a particle density of 12.56%, a particle-to-substrate distance of 0 nm, a particle size of 300 nm, and a cubic shape. Under these conditions, the efficiency of the solar cells increased from 23.5% (without nanoparticles) to 35.9%, and the short-circuit current increased from 12.1 to 19.2 A/m2. These findings provide valuable insights into the optimization of nanoparticle parameters for enhancing the performance of plasmonic amorphous silicon thin-film solar cells.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144073703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The optimization of design and performance in hybrid organic/inorganic LEDs toward next-generation high-efficiency LEDs: application of multi-model hybrid machine learning approach","authors":"Ujwala S. Ghodeswar,&nbsp;Rupali S. Balpande,&nbsp;Vaishali P. Raut,&nbsp;Manisha G. Waje,&nbsp;Yoginee S. Pethe,&nbsp;Nilesh Shelke,&nbsp;Haytham F. Isleem,&nbsp;Vikrant S. Vairagade","doi":"10.1007/s10825-025-02329-y","DOIUrl":"10.1007/s10825-025-02329-y","url":null,"abstract":"<div><p>New advanced LEDs will have to be developed by developing completely new methods of modeling and optimizing semiconductor nanostructures, especially those with hybrid organic–inorganic interfaces. Traditional approaches, such as Density Functional Theory (DFT), cannot capture the richness of quantum interactions, or multi-objective design challenges taken on by such systems, which ultimately result in suboptimal device performance. In this work, we overcome these challenges by implementing a gamut of state-of-the-art computational methods suited to the complexities of hybrid nanostructures. For that purpose, Quantum-Inspired Tensor Networks are used, namely Matrix Product States and Tree Tensor Networks, to optimize the electronic and optical properties of nanostructures. These methods thus manage the high-dimensional quantum state space effectively and, with the resultant approach, enhance the accuracy of band structure predictions by 20–30%, while the efficiency of light emission is enhanced by about 15%. The next step in interface engineering was to set up SHapley Additive exPlanations (SHAP) for explainable AI such that a detailed understanding of several interface features' contributions to LED performance can be made. This has pointed out interface roughness and material composition as the most determining factors, hence guiding further optimization efforts. We use Proximal Policy Optimization (PPO)—a reinforcement learning algorithm—to improve fabrication processes. This leads to a 12% increase in the light emission intensity and a 20% reduction in the variability of the process. Finally, we employ Bayesian Optimization with Gaussian Processes (BO-GP) for effective exploration in the multi-objective design space that achieves an emission efficiency enhancement of about 18%, with material cost reduction up to 10%. Altogether, these techniques greatly advance the design, fabrication, and performance optimization of hybrid semiconductor nanostructures and represent an enabling step toward next-generation high-efficiency LEDs.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Computational analysis of perovskite solar cells for space applications","authors":"L. Vanitha,&nbsp;R. Thandaiah Prabu,&nbsp;T. D. Subha,&nbsp;Atul Kumar","doi":"10.1007/s10825-025-02335-0","DOIUrl":"10.1007/s10825-025-02335-0","url":null,"abstract":"<div><p>Solar cells deployed in extra-terrestrial environments encounter high energy particles and ionizing radiation that compromise their stability, intensifying lattice defects. The computational examination of the radiation resistance of perovskite solar cells for their prospective utilization in extra-terrestrial environments is conducted. We simulated the (1) blackening of the glass substrate and (2) displacement defect caused by proton radiation in perovskite solar cells. The reduced transmittance of glass substrate causes short-circuit current (<i>J</i>_SC). To simulate the irradiation-caused defect degradation, we utilized the defect model, which replicated the experimental observation of large <i>J</i>_SC and small decays in open-circuit voltage (<i>V</i>_OC) with fluence of 1 MeV proton radiation. Simulation shows robust radiation resistance of perovskite as performance remains stable for 1 MeV proton fluence up to 10¹³ particles.cm⁻². The results derived from the simulation reinforce the applicability of perovskite in space environments.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143944265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization and performance enhancement in PBDB-T:ITIC-based organic photodetector via SWCNT integration","authors":"Ghazi Aman Nowsherwan,&nbsp;Umar Farooq Ali,&nbsp;Aurang Zaib,&nbsp;Mohsin Khan,&nbsp;Qasim Ali,&nbsp;Nouman Nowsherwan,&nbsp;Saira Ikram","doi":"10.1007/s10825-025-02331-4","DOIUrl":"10.1007/s10825-025-02331-4","url":null,"abstract":"<div><p>The versatility of organic photodetectors (OPDs) is evident from their flexible structures and impressive performance metrics. These materials are positioned to transform optoelectronics by enabling the manufacturing of high-performance devices using cost-effective processes. This study explored the addition of single-walled carbon nanotubes (SWCNTs) to PBDB-T:ITIC-based OPDs using numerical analysis with SCAPS 1D software. The optimized modeled structure PFN:Br/SWCNT/PBDB-T:ITIC/Spiro-MeOTAD/Cu yielded a responsivity of 0.2308 A/W and a detectivity of 8.8 × 10¹³ Jones. The combination of SWCNTs with the PBDB-T:ITIC matrix significantly improved the short-circuit current density (Jsc) to 23.68 mA/cm² and open-circuit voltage (Voc) to 0.73 V. The structured OPD achieved a fill factor (FF) of 75.88% at a thickness of 200 nm for the photosensitive layer. The study also examined the impact of environmental factors, such as temperature and light intensity, and the effect of series and shunt resistance on the device output parameters. Optimal performance was observed under 1 sun illumination at room temperature (300 K), where a low series resistance (1 Ω cm²) and high shunt resistance (1000 Ω cm²) were crucial for achieving exceptional device metrics. The built-in potential (Vbi) and doping density (Nd), determined through C-V measurements, were 0.74 V and 3.24 × 10¹⁷ cm⁻³, respectively. The Nyquist plots of the optimized structure display a semicircular shape, indicating reduced recombination rates and enhanced efficiency. These findings highlight the potential of SWCNT integration for enhancing the performance and stability of OPDs, particularly in visible-range applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143938375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance assessment of a GaSb/Si based dual material stacked double-gate hetrojunction TFET for label free biosensing applications","authors":"Priyanka Verma,&nbsp;Satyendra Kumar","doi":"10.1007/s10825-025-02321-6","DOIUrl":"10.1007/s10825-025-02321-6","url":null,"abstract":"<div><p>We present the results of the study of the sensitivity of a dielectrically-modulated GaSb/Si dual-material stacked double-gate hetero-junction tunnel field effect transistor (GaSb/Si DMSDG-HJTFET) as a biosensor capable of detecting the onset of diseases. We consider asymmetrically-doped source, channel, and drain regions with gate work function engineering and a gate stack structure involving <span>(HfO_2)</span> on <span>(SiO_2)</span> along with III–V/Si hetero junction. A nanocavity has been created by selectively removing a portion of the gate dielectric material close to the source end to achieve the biomolecule conjugation in the biosensor. To assess the inherent sensitivity of the device when exposed to charged as well as neutral biomolecules, we examine independently both charged as well as neutral biomolecules within the nanogap cavity, considering several values for the dielectric constant (k) and charge density (<span>(rho)</span>). The analysis of electrical performance of the biosensor has been carried out concerning the energy band diagram, tunneling rate, surface potential, electric field, transconductance, transfer characteristics, and output characteristics. The efficiency of the biosensor for the label-free detection is quantified by its sensitivity on peak drain current, transconductance, and <span>({text{I}}_{text{on}}/{text{I}}_{text{off}})</span> ratio. Further, in order to analyse the reliability of the biosensor, different real-time scenarios of partially filled cavities with different fill factors have been considered. Moreover, several step profiles have been taken into account, which emerge due to steric hindrance. The design and simulation of the biosensor has been carried out using the Silvaco TCAD tool. The simulation results demonstrate that GaSb/Si DMSDG-HJTFET biosensors can be a potential alternative for biosensing applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143918993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Band gap of Cu(In,Ga)Se2 as a bottom tandem partner","authors":"Ana Kanevce,&nbsp;Theresa Magorian Friedlmeier,&nbsp;Stefan Paetel","doi":"10.1007/s10825-025-02319-0","DOIUrl":"10.1007/s10825-025-02319-0","url":null,"abstract":"<div><p>Cu(In,Ga)Se₂ (CIGS) is a promising candidate for a bottom cell role in a tandem structure, having a tunable band gap covering the optimal band gap range values. Correct determination of the absorber band gaps in a tandem structure is very important, as small changes in band gap create high relative current differences. Shockley–Queisser theory predicts the optimal bottom cell band gap in relation to the top cell band gap, and the maximum expected performance, but it assumes a uniform band gap throughout the absorber. The best CIGS cells have spatial compositional variation, making the concept of assigning a single band gap value ambiguous and the band gap determination nontrivial. In this work, we look more closely at this ambiguity. In addition, using numerical simulations, we analyze optimal grading profiles for a bottom cell, illuminated only with low energy photons and compare them to the ones of a single cell, illuminated with a full AM1.5 spectrum.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143908859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analyzing the impact of drain-engineered DG GNR-TFET on analog/RF performance metrics","authors":"Md Akram Ahmad,&nbsp;Bhubon Chandra Mech,&nbsp;Muzaffar Imam,&nbsp;Satyabrata Jit,&nbsp;N. Aruna Kumari","doi":"10.1007/s10825-025-02330-5","DOIUrl":"10.1007/s10825-025-02330-5","url":null,"abstract":"<div><p>This paper presents a novel drain-engineered (DE) double-gate (DG) graphene nanoribbon (GNR) tunnel field-effect transistor (TFET) designed to address the limitations of conventional DG GNR-TFETs. The proposed device introduces a p⁺-n–n configuration, replacing the conventional p⁺-i-n⁺ structure by incorporating uniform n-type doping (<i>N</i>_<i>cd</i>) in both the channel and drain regions. This structural modification enhances the electric field at the source-channel junction, significantly improving ON-state band-to-band tunneling (BTBT) current. The performance of the optimized GNR-TFET is evaluated by varying <i>N</i>_<i>cd</i>, and the optimal configuration with <i>N</i>_<i>cd</i> = 2.5 × 10¹² cm⁻² exhibits: a 5.5-order reduction in ambipolar current (<i>I</i>_<i>AMB</i>) and an improvement in the <i>I</i>_<i>ON</i><i>/I</i>_<i>OFF</i> ratio by ~6.88 × 10⁴%. Furthermore, the device demonstrates superior analog and RF performance, including: ~1.4% increase in transconductance (<i>g</i>_<i>m</i>), a ~189% enhancement in the transconductance generation factor (TGF), and ~46.2% rise in the cut-off frequency (<i>f</i>_<i>T</i>). These improvements establish the proposed DE-DG GNR-TFET as a high-performance, energy-efficient candidate for next-generation electronic and RF applications. Additionally, the optimal device exhibits superior derived RF performance, achieving enhancements of 52.2% in the transconductance frequency product (TFP), 60.3% in the gain frequency product (GFP), and 216% in the gain transfer frequency product (GTFP). Finally, a linearity analysis is conducted to compare the DE-DG GNR-TFET with the conventional GNR-TFET, further validating the effectiveness of uniform n-type doping.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143908794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Computer simulation and performance analysis of metal–semiconductor–metal back-contact perovskite solar cells","authors":"Iliyas T. Dossayev,&nbsp;Assylan Akhanuly,&nbsp;Hryhorii P. Parkhomenko,&nbsp;Karlygash N. Dzhumagulova,&nbsp;Annie Ng,&nbsp;Erik O. Shalenov,&nbsp;Askhat N. Jumabekov","doi":"10.1007/s10825-025-02326-1","DOIUrl":"10.1007/s10825-025-02326-1","url":null,"abstract":"<div><p>Metal–semiconductor–metal back-contact perovskite solar cells (MSM BC PSCs) with interdigitated metallic electrodes show promise due to their simple structure. However, the power conversion efficiency (PCE) of experimentally obtained MSM BC PSCs is rather moderate. This could be attributed to suboptimal geometric dimensions of electrodes and the poor quality of the perovskite layers in reported devices. In this study, computer simulation methods are employed to investigate the influence of electrode and perovskite layer geometric and electronic parameters on the performance of MSM BC PSCs. The goal is to determine the optimum conditions for achieving high PCE. The findings reveal that the PCE of devices improves as the dimensions of electrodes become smaller. However, significant improvements in PCE are observed when the charge carrier diffusion lengths in the perovskite layer become longer and the work function difference between the electrodes becomes larger. The prediction based on optimal electrode and perovskite layer geometric and electronic parameters suggests that a PCE of around 26% can be achieved with MSM BC PSCs. Findings of this work unveils the hidden potential of MSM BC PSCs and can serve as a theoretical guide to optimize the structure and performance of experimental devices.</p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation on the variation effect of gate work function on (N^+) pocket-doped junctionless vertical tunneling FETs","authors":"Basudha Dewan,&nbsp;Shalini Chaudhary,&nbsp;Menka Yadav","doi":"10.1007/s10825-025-02320-7","DOIUrl":"10.1007/s10825-025-02320-7","url":null,"abstract":"<div><p>In this work, a novel <span>(N^{+})</span> pocket-doped gate stack junctionless vertical tunnel field-effect transistor is proposed for gas sensing applications. For better gate controllability over the channel potential and enhanced tunneling area, the conventional gate oxide is replaced with a high-k (HfO₂) gate oxide in stack with a SiO₂. <span>(N^{+})</span> SiGe pocket at the source–channel interface, which improves the band-to-band tunneling rate because of its lower bandgap compared to silicon. Work function modulation of the catalytic metal gate on exposure to gas molecules is used as the detection mechanism. In this work, silver, palladium and cobalt gate electrodes are used for sensing oxygen, hydrogen and ammonia gases, respectively. The Silvaco ATLAS TCAD tool is used for numerical simulation of the proposed device. Performance of the device is evaluated by analyzing the sensitivity of the device for temperatures ranging from 100K to 300K and pressures from <span>(10^{-14})</span> Torr to <span>(10^{-10})</span> Torr. Due to its low power consumption, good thermal stability and improved sensitivity, the proposed gas sensor finds applications in a wide variety of fields like electronic noses and automobiles.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143900744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}