Computer simulation and performance analysis of metal–semiconductor–metal back-contact perovskite solar cells

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Iliyas T. Dossayev, Assylan Akhanuly, Hryhorii P. Parkhomenko, Karlygash N. Dzhumagulova, Annie Ng, Erik O. Shalenov, Askhat N. Jumabekov
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Abstract

Metal–semiconductor–metal back-contact perovskite solar cells (MSM BC PSCs) with interdigitated metallic electrodes show promise due to their simple structure. However, the power conversion efficiency (PCE) of experimentally obtained MSM BC PSCs is rather moderate. This could be attributed to suboptimal geometric dimensions of electrodes and the poor quality of the perovskite layers in reported devices. In this study, computer simulation methods are employed to investigate the influence of electrode and perovskite layer geometric and electronic parameters on the performance of MSM BC PSCs. The goal is to determine the optimum conditions for achieving high PCE. The findings reveal that the PCE of devices improves as the dimensions of electrodes become smaller. However, significant improvements in PCE are observed when the charge carrier diffusion lengths in the perovskite layer become longer and the work function difference between the electrodes becomes larger. The prediction based on optimal electrode and perovskite layer geometric and electronic parameters suggests that a PCE of around 26% can be achieved with MSM BC PSCs. Findings of this work unveils the hidden potential of MSM BC PSCs and can serve as a theoretical guide to optimize the structure and performance of experimental devices.

Graphical abstract

金属-半导体-金属背接触钙钛矿太阳能电池的计算机模拟与性能分析
具有互指金属电极的金属-半导体-金属背接触钙钛矿太阳能电池(MSM BC PSCs)因其结构简单而具有广阔的应用前景。然而,实验得到的MSM BC PSCs的功率转换效率(PCE)相当适中。这可能是由于电极的次优几何尺寸和报道器件中钙钛矿层的质量差。本研究采用计算机模拟的方法研究了电极和钙钛矿层几何参数和电子参数对MSM BC PSCs性能的影响。目标是确定实现高PCE的最佳条件。研究结果表明,随着电极尺寸的减小,器件的PCE也会提高。然而,当钙钛矿层中的载流子扩散长度变长,电极之间的功函数差变大时,PCE得到了显著的改善。基于最佳电极和钙钛矿层几何和电子参数的预测表明,MSM BC PSCs的PCE约为26%。本工作的发现揭示了MSM BC PSCs的潜在潜力,可以为优化实验装置的结构和性能提供理论指导。图形抽象
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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