Band gap of Cu(In,Ga)Se2 as a bottom tandem partner

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-05-06 DOI:10.1007/s10825-025-02319-0

Ana Kanevce, Theresa Magorian Friedlmeier, Stefan Paetel

引用次数: 0

Abstract

Cu(In,Ga)Se₂ (CIGS) is a promising candidate for a bottom cell role in a tandem structure, having a tunable band gap covering the optimal band gap range values. Correct determination of the absorber band gaps in a tandem structure is very important, as small changes in band gap create high relative current differences. Shockley–Queisser theory predicts the optimal bottom cell band gap in relation to the top cell band gap, and the maximum expected performance, but it assumes a uniform band gap throughout the absorber. The best CIGS cells have spatial compositional variation, making the concept of assigning a single band gap value ambiguous and the band gap determination nontrivial. In this work, we look more closely at this ambiguity. In addition, using numerical simulations, we analyze optimal grading profiles for a bottom cell, illuminated only with low energy photons and compare them to the ones of a single cell, illuminated with a full AM1.5 spectrum.

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Cu(In,Ga)Se2作为底部串联伙伴的带隙

Cu(In,Ga)Se2 （CIGS）具有可调谐的带隙，覆盖最佳带隙范围值，是串联结构中底电池角色的有希望的候选者。正确确定串联结构中的吸收器带隙是非常重要的，因为带隙的微小变化会产生较高的相对电流差。Shockley-Queisser理论预测了最优的底部电池带隙与顶部电池带隙的关系，以及最大的预期性能，但它假设整个吸收器的带隙均匀。最好的CIGS电池具有空间成分变化，使得分配单个带隙值的概念模糊不清，并且带隙的确定不平凡。在这项工作中，我们更密切地关注这种模糊性。此外，通过数值模拟，我们分析了仅用低能量光子照射的底部电池的最佳分级曲线，并将其与使用全AM1.5光谱照射的单个电池进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.