基于单壁碳纳米管集成的PBDB-T: itic有机光电探测器的优化与性能提升

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Ghazi Aman Nowsherwan, Umar Farooq Ali, Aurang Zaib, Mohsin Khan, Qasim Ali, Nouman Nowsherwan, Saira Ikram
{"title":"基于单壁碳纳米管集成的PBDB-T: itic有机光电探测器的优化与性能提升","authors":"Ghazi Aman Nowsherwan,&nbsp;Umar Farooq Ali,&nbsp;Aurang Zaib,&nbsp;Mohsin Khan,&nbsp;Qasim Ali,&nbsp;Nouman Nowsherwan,&nbsp;Saira Ikram","doi":"10.1007/s10825-025-02331-4","DOIUrl":null,"url":null,"abstract":"<div><p>The versatility of organic photodetectors (OPDs) is evident from their flexible structures and impressive performance metrics. These materials are positioned to transform optoelectronics by enabling the manufacturing of high-performance devices using cost-effective processes. This study explored the addition of single-walled carbon nanotubes (SWCNTs) to PBDB-T:ITIC-based OPDs using numerical analysis with SCAPS 1D software. The optimized modeled structure PFN:Br/SWCNT/PBDB-T:ITIC/Spiro-MeOTAD/Cu yielded a responsivity of 0.2308 A/W and a detectivity of 8.8 × 10<sup>13</sup> Jones. The combination of SWCNTs with the PBDB-T:ITIC matrix significantly improved the short-circuit current density (Jsc) to 23.68 mA/cm<sup>2</sup> and open-circuit voltage (Voc) to 0.73 V. The structured OPD achieved a fill factor (FF) of 75.88% at a thickness of 200 nm for the photosensitive layer. The study also examined the impact of environmental factors, such as temperature and light intensity, and the effect of series and shunt resistance on the device output parameters. Optimal performance was observed under 1 sun illumination at room temperature (300 K), where a low series resistance (1 Ω cm<sup>2</sup>) and high shunt resistance (1000 Ω cm<sup>2</sup>) were crucial for achieving exceptional device metrics. The built-in potential (Vbi) and doping density (Nd), determined through C-V measurements, were 0.74 V and 3.24 × 10<sup>1</sup>⁷ cm⁻<sup>3</sup>, respectively. The Nyquist plots of the optimized structure display a semicircular shape, indicating reduced recombination rates and enhanced efficiency. These findings highlight the potential of SWCNT integration for enhancing the performance and stability of OPDs, particularly in visible-range applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimization and performance enhancement in PBDB-T:ITIC-based organic photodetector via SWCNT integration\",\"authors\":\"Ghazi Aman Nowsherwan,&nbsp;Umar Farooq Ali,&nbsp;Aurang Zaib,&nbsp;Mohsin Khan,&nbsp;Qasim Ali,&nbsp;Nouman Nowsherwan,&nbsp;Saira Ikram\",\"doi\":\"10.1007/s10825-025-02331-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The versatility of organic photodetectors (OPDs) is evident from their flexible structures and impressive performance metrics. These materials are positioned to transform optoelectronics by enabling the manufacturing of high-performance devices using cost-effective processes. This study explored the addition of single-walled carbon nanotubes (SWCNTs) to PBDB-T:ITIC-based OPDs using numerical analysis with SCAPS 1D software. The optimized modeled structure PFN:Br/SWCNT/PBDB-T:ITIC/Spiro-MeOTAD/Cu yielded a responsivity of 0.2308 A/W and a detectivity of 8.8 × 10<sup>13</sup> Jones. The combination of SWCNTs with the PBDB-T:ITIC matrix significantly improved the short-circuit current density (Jsc) to 23.68 mA/cm<sup>2</sup> and open-circuit voltage (Voc) to 0.73 V. The structured OPD achieved a fill factor (FF) of 75.88% at a thickness of 200 nm for the photosensitive layer. The study also examined the impact of environmental factors, such as temperature and light intensity, and the effect of series and shunt resistance on the device output parameters. Optimal performance was observed under 1 sun illumination at room temperature (300 K), where a low series resistance (1 Ω cm<sup>2</sup>) and high shunt resistance (1000 Ω cm<sup>2</sup>) were crucial for achieving exceptional device metrics. The built-in potential (Vbi) and doping density (Nd), determined through C-V measurements, were 0.74 V and 3.24 × 10<sup>1</sup>⁷ cm⁻<sup>3</sup>, respectively. The Nyquist plots of the optimized structure display a semicircular shape, indicating reduced recombination rates and enhanced efficiency. These findings highlight the potential of SWCNT integration for enhancing the performance and stability of OPDs, particularly in visible-range applications.</p></div>\",\"PeriodicalId\":620,\"journal\":{\"name\":\"Journal of Computational Electronics\",\"volume\":\"24 3\",\"pages\":\"\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2025-05-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Computational Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10825-025-02331-4\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-025-02331-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

有机光电探测器(OPDs)的多功能性从其灵活的结构和令人印象深刻的性能指标中可以看出。这些材料的定位是通过使用具有成本效益的工艺制造高性能器件来改变光电子学。本研究利用SCAPS 1D软件对单壁碳纳米管(SWCNTs)添加到PBDB-T: itic基opd中进行了数值分析。优化后的模型结构PFN:Br/SWCNT/PBDB-T:ITIC/Spiro-MeOTAD/Cu的响应率为0.2308 a /W,探测率为8.8 × 1013 Jones。SWCNTs与PBDB-T:ITIC基体结合后,短路电流密度(Jsc)显著提高至23.68 mA/cm2,开路电压(Voc)显著提高至0.73 V。在200 nm厚度的光敏层上,结构OPD的填充系数(FF)达到75.88%。研究还考察了温度、光照强度等环境因素对器件输出参数的影响,以及串联和并联电阻对器件输出参数的影响。在室温(300 K)下1个太阳光照下观察到最佳性能,其中低串联电阻(1 Ω cm2)和高分流电阻(1000 Ω cm2)对于实现卓越的器件指标至关重要。通过C-V测量确定的内置电位(Vbi)和掺杂密度(Nd)分别为0.74 V和3.24 × 101⁷cm⁻3。优化后结构的Nyquist图呈半圆形,表明复合率降低,效率提高。这些发现突出了swcnts集成在提高opd性能和稳定性方面的潜力,特别是在可见光范围应用中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimization and performance enhancement in PBDB-T:ITIC-based organic photodetector via SWCNT integration

The versatility of organic photodetectors (OPDs) is evident from their flexible structures and impressive performance metrics. These materials are positioned to transform optoelectronics by enabling the manufacturing of high-performance devices using cost-effective processes. This study explored the addition of single-walled carbon nanotubes (SWCNTs) to PBDB-T:ITIC-based OPDs using numerical analysis with SCAPS 1D software. The optimized modeled structure PFN:Br/SWCNT/PBDB-T:ITIC/Spiro-MeOTAD/Cu yielded a responsivity of 0.2308 A/W and a detectivity of 8.8 × 1013 Jones. The combination of SWCNTs with the PBDB-T:ITIC matrix significantly improved the short-circuit current density (Jsc) to 23.68 mA/cm2 and open-circuit voltage (Voc) to 0.73 V. The structured OPD achieved a fill factor (FF) of 75.88% at a thickness of 200 nm for the photosensitive layer. The study also examined the impact of environmental factors, such as temperature and light intensity, and the effect of series and shunt resistance on the device output parameters. Optimal performance was observed under 1 sun illumination at room temperature (300 K), where a low series resistance (1 Ω cm2) and high shunt resistance (1000 Ω cm2) were crucial for achieving exceptional device metrics. The built-in potential (Vbi) and doping density (Nd), determined through C-V measurements, were 0.74 V and 3.24 × 101⁷ cm⁻3, respectively. The Nyquist plots of the optimized structure display a semicircular shape, indicating reduced recombination rates and enhanced efficiency. These findings highlight the potential of SWCNT integration for enhancing the performance and stability of OPDs, particularly in visible-range applications.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信