Journal of Computational Electronics最新文献_第2页

Low-frequency noise performance of a molybdenum ditelluride double-gate MOSFET 二碲化钼双栅极MOSFET的低频噪声性能

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-07-22 DOI: 10.1007/s10825-023-02074-0

M. Muthu Manjula, R. Ramesh

引用次数: 0

On a method of treating polar-optical phonons in real space 关于实空间中极性光学声子的一种处理方法

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-07-19 DOI: 10.1007/s10825-023-02083-z

D. K. Ferry

引用次数: 0

Finite-element simulation of interfacial resistive switching by Schottky barrier height modulation 肖特基势垒高度调制界面电阻开关的有限元模拟

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-07-18 DOI: 10.1007/s10825-023-02086-w

Sagar Khot, Dongmyung Jung, Yongwoo Kwon

{"title":"Finite-element simulation of interfacial resistive switching by Schottky barrier height modulation","authors":"Sagar Khot, Dongmyung Jung, Yongwoo Kwon","doi":"10.1007/s10825-023-02086-w","DOIUrl":"10.1007/s10825-023-02086-w","url":null,"abstract":"<div>This study demonstrates a numerical model for interfacial switching memristors based on the Schottky barrier height modulation mechanism. A resistive Schottky contact is formed for an n-type semiconductor and a high work-function metal (e.g., strontium titanate and platinum). The contact resistance is determined by the Schottky barrier height, which is influenced by the concentration of oxygen vacancies serving as space charges. Accordingly, the spatial distribution of vacancies and cell conductance can be controlled by applying a bias voltage. This interfacial switching is advantageous over filamentary switching, owing to the conductance change being more gradual in interfacial switching. In this study, a two-step numerical analysis was performed to model the conductance change in an interfacial switching memristor having a metal–oxide–metal structure of Pt/SrTiO3/Nb-SrTiO3, where Pt and SrTiO3 form a Schottky contact. In the first step, the change in the spatial distribution of vacancies by an applied switching voltage was obtained by solving the drift and diffusion equations for vacancies. In the second step, after setting the Schottky barrier height according to the vacancy concentration near the contact, the cell conductance was obtained by calculating the current value by applying a small read voltage. Consequently, our simulation successfully reproduced the experimental results for the SrTiO3-based memristor. Through this study, our device simulation for interfacial switching was successfully established, and it can be utilized in the computational design of various device architectures.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 5","pages":"1453 - 1462"},"PeriodicalIF":2.1,"publicationDate":"2023-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41229242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

3D modeling of feature-scale fluorocarbon plasma etching in silica 二氧化硅中特征尺度氟碳等离子体刻蚀的三维建模

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-07-15 DOI: 10.1007/s10825-023-02068-y

Frâncio Rodrigues, Luiz Felipe Aguinsky, Christoph Lenz, Andreas Hössinger, Josef Weinbub

{"title":"3D modeling of feature-scale fluorocarbon plasma etching in silica","authors":"Frâncio Rodrigues, Luiz Felipe Aguinsky, Christoph Lenz, Andreas Hössinger, Josef Weinbub","doi":"10.1007/s10825-023-02068-y","DOIUrl":"10.1007/s10825-023-02068-y","url":null,"abstract":"<div>Fluorocarbon dry etching of vertical silica-based structures is essential to the fabrication of advanced complementary metal-oxide-semiconductor and dynamic random access memory devices. However, the development of etching technology is challenged by the lack of understanding of complex surface reaction mechanisms and by the intricacy of etchant flux distribution on the feature-scale. To study these effects, we present a three-dimensional, TCAD-compatible, feature-scale modeling methodology. The methodology combines a level-set topography engine, Langmuir kinetics surface reaction modeling, and a combination of reactant flux evaluation schemes. We calibrate and evaluate our model to a novel, highly selective, etching process of a (mathrm {SiO_2}) via and a (textrm{Ru}) hardmask by (mathrm {CF_4/C_4F_8}). We adapt our surface reaction model to the novel stack of materials, and we are able to accurately reproduce the etch rates, topography, and critical dimensions of the reported experiments. Our methodology is therefore able to prototype and study novel etching processes and can be integrated into process-aware three-dimensional device simulation workflows.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 5","pages":"1558 - 1563"},"PeriodicalIF":2.1,"publicationDate":"2023-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-023-02068-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41228997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Supercontinuum spectra above 2700 nm in circular lattice photonic crystal fiber infiltrated chloroform with the low peak power 低峰值功率掺入三氯甲烷的圆晶格光子晶体光纤中2700 nm以上的超连续谱

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-07-14 DOI: 10.1007/s10825-023-02078-w

Thuy Nguyen Thi, Lanh Chu Van

{"title":"Supercontinuum spectra above 2700 nm in circular lattice photonic crystal fiber infiltrated chloroform with the low peak power","authors":"Thuy Nguyen Thi, Lanh Chu Van","doi":"10.1007/s10825-023-02078-w","DOIUrl":"10.1007/s10825-023-02078-w","url":null,"abstract":"<div>The broad supercontinuum spectrum in chloroform infiltrate hollow-core circular photonic crystal fibers with low peak powers of 1.44 kW and 20 kW has been investigated. The improvement in optical properties of the photonic crystal fibers is attributed to the difference air holes's size of the rings in the cladding, where the air holes's size in the first ring are smaller than others, and the infiltration of chloroform to the core. The flat dispersion, small effective mode area of 1.43 µm2, low confinement loss of 2.47 dB/m at 0.945 µm pump wavelength is responsible for the broad supercontinuum spectra of 753.9 nm in the first fiber with all-normal dispersion. The soliton dynamics provides bandwidth up to 2779.6 nm at a pump wavelength of 1.4 µm through supercontinuum generation in the second fiber with anomalous dispersion. The results further demonstrate that it is possible to generate broad supercontinuum spectra in the specified wavelength region thanks to exact control of photonic crystal fibers dispersion properties by using suitable highly nonlinear fluids and changing the air hole's size in the innermost ring of the photonic crystal fibers.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 5","pages":"1507 - 1521"},"PeriodicalIF":2.1,"publicationDate":"2023-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-023-02078-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41229181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparative study of multi-physics generated small dipoles in conducting media 导电介质中多物理产生的小偶极子的比较研究

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-07-14 DOI: 10.1007/s10825-023-02076-y

Sai Zhou, George Pan

{"title":"Comparative study of multi-physics generated small dipoles in conducting media","authors":"Sai Zhou, George Pan","doi":"10.1007/s10825-023-02076-y","DOIUrl":"10.1007/s10825-023-02076-y","url":null,"abstract":"<div>In this paper we present the results of a study of electronically and mechanically generated transverse magnetic (TM) and transverse electric (TE) dipoles in a lossy environment, so that antenna design guidelines may be established at the system level. At far-zone, the ratio (|frac{E}{H}|:= eta _0) is the intrinsic impedance, and they are identical for the TM and its dual TE dipoles. Nonetheless, the ratio in near-zone behaves drastically different between the TM and dual TE. We derived closed form expressions of the antenna Ohmic loss in a spherical lossy shell (SLS) for the first time, yielding precise radiation efficiency (eta _r) and accurate computations. For electrically small dipole of normalized half dipole-length (|ka|ll 1), analytic results show that (eta _r) is proportional to (|ka|^3) for TM dipole, and |ka| for TE dipole, respectively. Consequently, efficiency (eta _r) of TE can be better than TM in two to three orders of magnitude for under seawater communication. The time-domain energy flow velocity (EFV) patterns show that the TE dipoles are always radiation-dominating, in either lossless or lossy medium. Numerical results reveal that mechanically spinning dipole is smaller in size and weight but it requires more operation power, compared to its electromagnetic counter-partners. Finally, design, tuning and impedance matching of low-profile TE dipole antenna are outlined.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 5","pages":"1576 - 1586"},"PeriodicalIF":2.1,"publicationDate":"2023-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-023-02076-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41229180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials 基于二维材料异质结构的隧道器件耗散输运的从头算模拟

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-07-11 DOI: 10.1007/s10825-023-02080-2

Adel M’foukh, Jérôme Saint-Martin, Philippe Dollfus, Marco Pala

引用次数: 0

A deterministic Wigner transport equation solver with infinite correlation length 具有无限相关长度的确定Wigner输运方程求解器

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-07-11 DOI: 10.1007/s10825-023-02079-9

Kyoung Yeon Kim

引用次数: 1

Stable two-dimensional Na decorated BeN4: a potential candidate for hydrogen storage 稳定的二维钠修饰BeN4：储氢的潜在候选者

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-07-11 DOI: 10.1007/s10825-023-02084-y

Shakaib Hussain, Abdul Jalil, Arooba Kanwal, Syed Zafar Ilyas, Sarfraz Ahmed, Ather Hassan

{"title":"Stable two-dimensional Na decorated BeN4: a potential candidate for hydrogen storage","authors":"Shakaib Hussain, Abdul Jalil, Arooba Kanwal, Syed Zafar Ilyas, Sarfraz Ahmed, Ather Hassan","doi":"10.1007/s10825-023-02084-y","DOIUrl":"10.1007/s10825-023-02084-y","url":null,"abstract":"<div>To overcome the prevalent challenge of reversible hydrogen storage, surface activation by metal atom decoration holds a great promise, thus, boosting the hydrogen storage capacity. In this work, sodium (Na) decorated beryllonitrene (BeN4) monolayer has been identified as a hydrogen storage material using first-principles calculations. Our results reveal that Na decorated BeN4 has ability to adsorb upto 12 H2 molecules, leading to high gravimetric density of 4.26 wt.%. The adsorption energy per H2 (adsorbate) is moderate, i.e., between 0.13 and 0.298 eV, good enough for hydrogen storage in practical applications. AIMD simulations disclose that adsorbate experiences no kinetic hindrance in desorption. Moreover, the desorption temperature of H2 molecule on NaBeN4 monolayer (substrate) varies from 162.5 to 382 K, confirming the reversibility of substrate and thus ensuring its potential for hydrogen storage medium. The short recovery time predicts that the substrate responds rapidly in the presence of H2 molecules, which guarantees the fast kinetics of adsorbate. Our calculations predict Na-decorated BeN4 monolayer as an excellent candidate for reversible and high-capacity hydrogen storage material.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 5","pages":"1409 - 1414"},"PeriodicalIF":2.1,"publicationDate":"2023-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-023-02084-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41229366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analytical modeling and quasi-static characterization of a lithium niobate (LiNbO3)-based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET 铌酸锂（LiNbO3）基金属-铁电-金属-绝缘体-半导体（MFMIS）NCFET的分析建模和准静态特性

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-07-10 DOI: 10.1007/s10825-023-02070-4

N. R. Saritha, J. Charles Pravin, V. Sandeep, Josephine Selle J, V. N. Ramakrishnan

{"title":"Analytical modeling and quasi-static characterization of a lithium niobate (LiNbO3)-based metal–ferroelectric–metal–insulator–semiconductor (MFMIS) NCFET","authors":"N. R. Saritha, J. Charles Pravin, V. Sandeep, Josephine Selle J, V. N. Ramakrishnan","doi":"10.1007/s10825-023-02070-4","DOIUrl":"10.1007/s10825-023-02070-4","url":null,"abstract":"<div>Lowering power consumption has emerged as the primary goal as silicon circuits become more compact. Furthermore, the ultra-highly integrated circuit will unavoidably generate a substantial amount of heat. A novel mathematical modeling method is defined for the analysis of a ferroelectric-based negative capacitance field-effect transistor (NCFET) that will adequately address the non-uniformity in polarization switching and subthreshold behavior. This study analyses the I–V and C–V properties of a lithium niobate (LiNbO(_{3})) ferroelectric material-based metal–ferroelectric–metal–insulator–semiconductor NCFET. Device parameters including drain current, polarization factor, capacitance, total charge density, and subthreshold swing are evaluated in accordance with the calibration performed considering different variables, such as ferroelectric materials, gate bias modification, and ferroelectric thickness. Numerical simulation is also performed using the Silvaco ATLAS TCAD tool to simulate and calibrate the above-mentioned parameters. MATLAB simulation is initially performed to solve the ferroelectric 1-D Landau–Khalatnikov equation, which is then used for subsequent analyses. The proposed device also starts to exhibit hysteresis behavior at low ferroelectric thicknesses. The simulations demonstrate a 45% increase in the potential curve, thus proving the device to be a viable contender for low-power applications.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 5","pages":"1423 - 1432"},"PeriodicalIF":2.1,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41229049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0