Journal of Computational Electronics最新文献_第2页

Supercontinuum generation dynamics in highly nonlinear photonic crystal fiber with normal and anomalous dispersion 具有正常色散和异常色散的高度非线性光子晶体光纤的超连续谱生成动力学

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2025-05-02 DOI: 10.1007/s10825-025-02305-6

Monika Goyal, Sujata Vedi, Manoj Mishra, Mohit Sharma

{"title":"Supercontinuum generation dynamics in highly nonlinear photonic crystal fiber with normal and anomalous dispersion","authors":"Monika Goyal, Sujata Vedi, Manoj Mishra, Mohit Sharma","doi":"10.1007/s10825-025-02305-6","DOIUrl":"10.1007/s10825-025-02305-6","url":null,"abstract":"<div><p>This study investigates ultrashort pulse propagation and supercontinuum (SC) generation in lead silicate photonic crystal fibers (PCFs) with near-zero normal and anomalous dispersion using the finite-difference time-domain (FDTD) method. A comparative analysis is performed using the split-step Fourier method for pump pulses of 20, 50, and 100 fs durations at 1550 nm with a peak power of 1 kW. The results demonstrate that a 20 fs pulse in the normal dispersion regime produces an SC spectrum spanning 800–2500 nm, achieving a broad and coherent output primarily driven by self-phase modulation and four-wave mixing. In contrast, an anomalous dispersion regime results in an SC spectrum extending from 1000 to 3000 nm, dominated by soliton fission and Raman-induced soliton self-frequency shift. The presence of two zero-dispersion wavelengths (1.2 and 1.9 μm) enhances dispersive wave generation, contributing to extended spectral broadening. The proposed PCF design ensures high nonlinearity <span>((gamma ={415 text{W}}^{-1}{text{Km}}^{-1}))</span> and low confinement loss making it suitable for broadband SC generation at low input power. This study provides a promising approach for compact and efficient ultra-broadband light sources with applications in telecommunications, imaging, and optical sensing.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143896734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A unified I-V model of SiC double-gate MOSFETs SiC双栅mosfet的统一I-V模型

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2025-04-30 DOI: 10.1007/s10825-025-02325-2

Yi Li, Tao Zhou, Zixuan Guo, Yuqiu Yang, Junyao Wu, Huan Cai, Jun Wang, Jungang Yin, Qin Liu, Linfeng Deng

{"title":"A unified I-V model of SiC double-gate MOSFETs","authors":"Yi Li, Tao Zhou, Zixuan Guo, Yuqiu Yang, Junyao Wu, Huan Cai, Jun Wang, Jungang Yin, Qin Liu, Linfeng Deng","doi":"10.1007/s10825-025-02325-2","DOIUrl":"10.1007/s10825-025-02325-2","url":null,"abstract":"<div><p>Silicon carbide (SiC) double-gate metal oxide semiconductor field-effect transistors (DG MOSFETs) have attracted significant attention due to their ideal high-temperature characteristics and radiation resistance. Therefore, it is meaningful to exploit an I-V model for SiC DG MOSFETs. In this article, we make a linear approximation to describe the relationship between the surface mobile charge density and the surface electron concentration of the device. To determine the proportionality constant based on the solution of the one-dimensional Poisson’s equation in the subthreshold region of the device, we derived a functional relationship between the surface mobile charge density in the channel and the channel quasi-Fermi potential. Then, we successfully developed a unified I-V model for the SiC DG MOSFETs. Based on the virtual gate assumption, the model has been extended to SOI (SiC-On-Insulator) structures. By comparing our model with the results from the two-dimensional numerical simulation software Silvaco Atlas, our model’s calculations closely match the two-dimensional numerical simulation results from the subthreshold region to the inversion region. This model has significance for SiC DG MOSFETs for high-temperature electronic circuit.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A machine learning and genetic algorithm-based notch band design method for ultra-wideband antennas 基于机器学习和遗传算法的超宽带天线陷波带设计方法

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2025-04-30 DOI: 10.1007/s10825-025-02327-0

Chengjie Li, Ruxin Zheng, Yaogen Li, Yixing Gu, Mingjie Sheng, Shiping Tang

{"title":"A machine learning and genetic algorithm-based notch band design method for ultra-wideband antennas","authors":"Chengjie Li, Ruxin Zheng, Yaogen Li, Yixing Gu, Mingjie Sheng, Shiping Tang","doi":"10.1007/s10825-025-02327-0","DOIUrl":"10.1007/s10825-025-02327-0","url":null,"abstract":"<div><p>In this article, an innovative optimization design method for ultra-wideband (UWB) antennas that leverages machine learning models and intelligent optimization algorithms is presented. The method aims to improve the efficiency and reduce the cost of antenna design. By incorporating U-shaped slots and rectangular slot resonators, the UWB antenna achieves dual-notch frequency bands. This method is based on a machine learning model to establish the relationship between structural parameters and performance parameters, and then uses a method to create a dataset based on prior knowledge. Comparing the performance of three machine learning models, Gaussian process regression, support vector machine regression, and BP neural network, the (BP) neural network model and genetic algorithm are finally adopted for the optimization of the geometric structure of ultra-wideband antennas. The optimized antenna demonstrates dual-band suppression capabilities at center frequencies of 3.9 GHz and 5.4 GHz, effectively mitigating interference in the satellite communication C-band and the WLAN band, respectively. The effectiveness of the optimization strategy combining machine learning with a genetic algorithm was validated through full-wave simulations.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Novel 4H-SiC MESFET with amended minimum noise figure for high-frequency applications 新型4H-SiC MESFET，修正最小噪声系数，适用于高频应用

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2025-04-25 DOI: 10.1007/s10825-025-02322-5

Zohreh Roustaie, Ali A. Orouji

{"title":"Novel 4H-SiC MESFET with amended minimum noise figure for high-frequency applications","authors":"Zohreh Roustaie, Ali A. Orouji","doi":"10.1007/s10825-025-02322-5","DOIUrl":"10.1007/s10825-025-02322-5","url":null,"abstract":"<div><p>The minimum noise figure is a fundamental parameter for characterizing the noise performance of Metal Semiconductor Field Effect Transistors (MESFETs). We present a new structure of SiC-MESFET with an amended minimum noise figure. The main idea of this work is to change the channel's thickness and modify the channel's charge distribution, which leads to the modification of the curvature of the depletion region. The proposed structure consists of an asymmetrical channel thickness using a step gate. The proposed structure is an amended minimum noise figure MESFET (AMNF-MESFET). The minimum noise figure of the proposed structure is significantly improved compared to a conventional MESFET (C-MESFET). Also, the other important parameters of the AMNF-MESFET device have increased, including breakdown voltage from 160 to 210 V, cut-off frequency (<i>f</i><sub>T</sub>) from 20 to 36 GHz, and maximum oscillation frequency (<i>f</i><sub>max</sub>) from 50.55 to 61.25 GHz approximately 31%, 80%, and 21%, respectively compared to the C-MESFET. The minimum noise figure in the AMNF-MESFET is reduced from 35 to 15.5 dB at 100 GHz compared to the C-MESFET and that's a significant improvement. Therefore, the AMNF-MESFET is an excellent candidate for high voltage, high current, high-frequency, and low noise applications. </p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143875453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A transient thermal analysis applied on hybrid aluminum and carbon nanotubes interconnects using a new finite difference algorithm 基于有限差分算法的铝纳米管与碳纳米管杂化互连的瞬态热分析

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2025-04-23 DOI: 10.1007/s10825-025-02314-5

Nadir Youssef, Belahrach Hassan, Ghammaz Abdelilah, Naamane Aze-eddine, Radouani Mohammed

引用次数: 0

Tuning the physical properties of monolayer germanium carbide through strain engineering 利用应变工程技术调整单层碳化锗的物理性质

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2025-04-21 DOI: 10.1007/s10825-025-02317-2

Md. Shizer Rahman, Md. Rasidul Islam, Ajay Krishno Sarkar, I. K. Gusral Ghosh Apurba

{"title":"Tuning the physical properties of monolayer germanium carbide through strain engineering","authors":"Md. Shizer Rahman, Md. Rasidul Islam, Ajay Krishno Sarkar, I. K. Gusral Ghosh Apurba","doi":"10.1007/s10825-025-02317-2","DOIUrl":"10.1007/s10825-025-02317-2","url":null,"abstract":"<div><p>Due to its massive direct bandgap and large exciton binding energy, two-dimensional germanium carbide (2D-GeC) has already piqued the interest of many researchers. We primarily focus on the biaxial strain effect on its electronic, vibrational, optical, and structural properties using density functional theory calculations. At its direct <i>K</i>-point, the electronic bandgap of monolayer GeC is approximately 2.04 eV, and this bandgap is brought down to about 1.96 eV when the spin–orbit coupling (SOC) effect is incorporated. The bandgap demonstrates a decline and rise in elevation as compressive and tensile strains are applied within the range of − 6 to + 6%. Our results suggest that monolayer GeC becomes unstable when subjected to compressive strains beyond − 2%, but it remains stable up to + 6% tensile strain. The dynamic stability of the 2D-GeC structure is evident as it can tolerate a notable degree of biaxial strain. Furthermore, the strain-induced variations in the optical properties of monolayer GeC, including the real and imaginary dielectric spectra and electron energy loss function, reveal its excellent light absorption capacity across both the infrared and visible spectrums. Bandgap modulation depends on such SOC impacts may potentially contribute to the next generation of optoelectronic and spintronic devices using 2D-GeC.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143856667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Realization of fractal resonator cells developed on substrate-integrated waveguide for S-band filter applications 实现在基底集成波导上开发的分形谐振器单元，用于 S 波段滤波器应用

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2025-04-18 DOI: 10.1007/s10825-025-02310-9

R. Surender, S. Oudaya coumar, M. Raja

引用次数: 0

Technical review of four different quantum systems: comparative analysis of quantum correlation, signal-to-noise ratio, and fidelity 四种不同量子系统的技术回顾：量子相关、信噪比和保真度的比较分析

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2025-04-16 DOI: 10.1007/s10825-025-02313-6

Ahmad Salmanogli, Vahid Sharif Sirat

{"title":"Technical review of four different quantum systems: comparative analysis of quantum correlation, signal-to-noise ratio, and fidelity","authors":"Ahmad Salmanogli, Vahid Sharif Sirat","doi":"10.1007/s10825-025-02313-6","DOIUrl":"10.1007/s10825-025-02313-6","url":null,"abstract":"<div><p>The current paper investigates the different methods and approaches have been used to create microwave modes of quantum correlation. Specifically, we consider the electro-opto-mechanical, optoelectronics, 4-coupled qubits, and InP HEMT coupled with two external oscillator methods, as well as evaluate their effectiveness for quantum applications. Since these systems are open quantum systems, they interact with their own environment medium and thermal bath. To ensure an accurate comparison, we analyzed all of the systems with the same criteria. Thus, at first all systems are introduced briefly, then the total Hamiltonian is theoretically derived, and finally, the system dynamics are analogously analyzed using the Lindblad master equation. We then calculate the quantum correlation function between cavity modes, signal-to-noise ratio, and fidelity for each system to evaluate their performance. The results show that the strength and nature of the calculated quantities vary among the systems. An interesting result is the emergence of mixing behavior in the quantum correlation function and signal-to-noise ratio for systems that use different cavities. Also, it can be identified a significant similarity between the 4-coupled qubits and InP HEMT coupled with external oscillators methods, where an avoided level crossing occurs in the quantum correlation. Additionally, the study results reveal a high consistency between the signal-to-noise ratio and classical discord.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring the optoelectronic properties of monolayer PtS2, ZrS2, and PtS2/ZrS2 van der Waals heterostructures under shear strain 探讨剪切应变下单层PtS2、ZrS2及PtS2/ZrS2范德华异质结构的光电特性

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2025-04-15 DOI: 10.1007/s10825-025-02318-1

Hang Yang, Lu Yang, Jinlin Bao, Huaidong Liu, Yanshen Zhao

{"title":"Exploring the optoelectronic properties of monolayer PtS2, ZrS2, and PtS2/ZrS2 van der Waals heterostructures under shear strain","authors":"Hang Yang, Lu Yang, Jinlin Bao, Huaidong Liu, Yanshen Zhao","doi":"10.1007/s10825-025-02318-1","DOIUrl":"10.1007/s10825-025-02318-1","url":null,"abstract":"<div><p>First-principles are employed to investigate the stability of monolayer PtS<sub>2</sub>, ZrS<sub>2</sub>, and the heterostructure of PtS<sub>2</sub>/ZrS<sub>2</sub>, along with their related optoelectronic properties. The binding energies of six stacking configurations of the heterostructures were calculated, and the stacking structure with the lowest binding energy is selected to further verify the stability of the molecular dynamics. The heterostructure under shear strain has effectively regulated the band gap, dielectric function, and light absorption while consistently maintaining a type II band alignment. After applying shear strain, the static dielectric constants of the monolayer PtS<sub>2</sub>, ZrS<sub>2</sub>, and PtS<sub>2</sub>/ZrS<sub>2</sub> heterostructure increased by 27%, 23%, and 20%, respectively. Compared to the two monolayer structures, the shear-modified heterostructure exhibits a smaller band gap and a higher absorption coefficient, thereby broadening the application of the PtS<sub>2</sub>/ZrS<sub>2</sub> heterostructure in electronic and optical engineering.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143835521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dielectric engineered charge plasma assisted JFTFET SARS-CoV-2 sensor for rapid assessment of respiratory disorder: proposal and investigation 用于呼吸系统疾病快速评估的介质工程电荷等离子体辅助 JFTFET SARS-CoV-2 传感器：建议与研究

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2025-04-14 DOI: 10.1007/s10825-025-02316-3

Sukanya Ghosh

{"title":"Dielectric engineered charge plasma assisted JFTFET SARS-CoV-2 sensor for rapid assessment of respiratory disorder: proposal and investigation","authors":"Sukanya Ghosh","doi":"10.1007/s10825-025-02316-3","DOIUrl":"10.1007/s10825-025-02316-3","url":null,"abstract":"<div><p>Dielectric engineered (DE) field-effect transistors (FETs) have become quite popular for label-free detection of biomolecules. Nevertheless, the intrinsic short-channel effects restrict their scalability, sensitivity, and energy optimization. Consequently, to achieve the full capability of the DEFET-based biosensors, an effort to quickly identify biomarkers for the SARS-CoV-2 virus is being commenced for the first time. This utilizes a highly expandable, exceptionally sensitive, and energy-saving DE charge plasma assisted junction free tunnel FET (DE-CPA-JFTFET). The proposed architecture enables the incorporation of a nanogap cavity at the source end within the gate oxide via targeted etching, offering stability to the immobilized biomolecules. Affordable diagnostic techniques are essential to curb the transmission of infectious illnesses, including COVID-19. Utilizing the envelope, spike, and DNA proteins of the virus, a comprehensive examination of the sensitivity of the proposed sensor has been conducted by measuring the change in drain current and threshold voltage using calibrated TCAD simulations. Presence of the composite biomolecules in the nanogaps are characterized by the effective dielectric constant (<i>k</i> = 4, 10, 12) of the virus proteins including the DNA charge density variation ranging from <span>(- ,2 times 10^{12})</span> to <span>(+ ,2 times 10^{12} ,{text{C}}/{text{cm}}^{2})</span>. Present findings suggest that the proposed DE-CPA-JFTFET demonstrates an exceptionally high threshold voltage sensitivity (<i>S</i><sub>VTH</sub>) of 31.50, ON-state current sensitivity (<i>S</i><sub>ION</sub>) of <span>(sim ,459.76)</span>, a high <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> exceeding seven orders of magnitude, sub-threshold swing (SS) of <span>(sim ,10,{text{mV}}/{text{dec}})</span>, making it a potential alternative to traditional FET-based biosensors. Moreover, the proposed DE-CPA-JFTFET sensor has also been analyzed by investigating the transient behavior of the drain current.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143826649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0