Journal of Computational Electronics最新文献

{"title":"Suppression of ambipolarity without compromising delay using drain-side lateral heterojunction for future TFETs","authors":"Sayani Ghosh,&nbsp;Priyajit Mukherjee,&nbsp;Hafizur Rahaman","doi":"10.1007/s10825-025-02402-6","DOIUrl":"10.1007/s10825-025-02402-6","url":null,"abstract":"<div><p>In this work, a novel drain-side lateral heterojunction architecture is proposed to effectively suppress ambipolar conduction in tunnel FETs (TFETs). The proposed lateral heterojunction features a large bandgap GaAsP pocket on the drain side, forming a heterojunction at the channel/drain junction of the TFET. Since large bandgap materials exhibit a lower band-to-band tunneling rate, the GaAsP drain pocket efficiently reduces ambipolarity in both Si and non-Si-TFETs. Furthermore, well-calibrated device simulation results show that the proposed GaAsP drain pocket TFET with optimized pocket length provides superior performance in terms of reduced ambipolarity compared to conventional TFETs and TFETs with other possible structural modifications at the channel/drain interface using GaAsP. It is well known that both ambipolar behavior and capacitance values play a critical role for the successful operation of TFET-based high-speed logic circuits. Therefore, the impact of the GaAsP drain pocket on capacitance and intrinsic time delay is also critically evaluated.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modelling of a two-port patch antenna with metasurface absorber using machine learning algorithms","authors":"Neha K. Saini,&nbsp;Anand Vardhan Bhalla,&nbsp;Ashish Bagwari,&nbsp;Ravitesh Mishra,&nbsp;Ch. Anil Kumar","doi":"10.1007/s10825-025-02399-y","DOIUrl":"10.1007/s10825-025-02399-y","url":null,"abstract":"<div><p>A two-port microstrip antenna integrated with a metasurface (MS) absorber is designed and examined in this paper. MS placement below the 2-port antenna absorbs the normalized EM waves as well as improves the gain level to above 3.0 dBi. Loading of cross slots produces circular polarization features between 837 and 889 MHz. Reverse orientation of the slots on the patch enhances the separation by 25 dB. Simulated, experimental, and ML prediction confirm that the designed antenna works between 715 and 977 MHz. A Bbroadsided far-field pattern and good values of the MIMO parameters make the proposed antenna applicable for UHF RFID applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144843314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimized dielectric-plasmonic interfaces for long-range surface plasmon resonance sensors","authors":"Rajeev Kumar,&nbsp;Shivam Singh,&nbsp;Rachana Arya,&nbsp; Mayank,&nbsp;Abdullah Saad Alsubaie,&nbsp;Amrindra Pal,&nbsp;Arshdeep Singh,&nbsp;Lalit Garia","doi":"10.1007/s10825-025-02403-5","DOIUrl":"10.1007/s10825-025-02403-5","url":null,"abstract":"<div><p>In this seminal work, we propose a novel-guided wave long-range surface plasmon resonance (GW-LRSPR) sensor. The multilayer sensor structure combines 2S2G prism, cytop, BaTiO₃, and silver (Ag). The inclusion of barium titanate (BaTiO₃: perovskite material), a material with high permittivity and piezoelectric properties, significantly enhances the imaging sensitivity (<i>S</i>_imag) of the proposed GW-LRSPR sensor as it allows for the tuning of the plasmonic response through electrical or mechanical stimuli. Additionally, the use of a Cytop layer as an insulating and protective dielectric layer further enhances the sensor’s durability and optical performance. By incorporating the BaTiO₃ layer, the sensor achieves a maximum <i>S</i>_imag of 73,031 RIU⁻¹, significantly higher than the 44,542 RIU⁻¹ obtained without the layer. Hence, the GW-LRSPR sensor demonstrated strong capability in analyte detection. The sensor also exhibits a figure of merit (FoM) of 7.3 × 10⁶ RIU⁻¹, with detection accuracies (DA) of 169.49/° and 185.18/° for the LRSPR and GW-LRSPR sensors, respectively. Overall, the proposed GW-LRSPR sensor improves imaging sensitivity by nearly 64% compared to the LRSPR sensor.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144832316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spontaneous emission spectra of GaAsBi/GaAs double quantum well structures","authors":"DongFeng Liu","doi":"10.1007/s10825-025-02397-0","DOIUrl":"10.1007/s10825-025-02397-0","url":null,"abstract":"<div><p>This study systematically investigates the spontaneous emission spectra of GaAs_1-xBi_x/GaAs double quantum wells (DQWs) through an eight-band <b>k</b>•<b>p</b> model, elucidating the dependence of the emission characteristics across varying well widths, barrier thicknesses, Bi compositions, doping densities, and temperatures. The emission peak intensity decreases and redshifts with increasing well-width due to weakened quantum confinement, with DQWs showing a more gradual intensity decay than SQWs. The GaAs barrier thickness of the DQWs is found to affect minimally the spontaneous emission spectra, but a GaAs_0.95Bi_0.05/GaAs DQW, where the interwell barrier is a GaAs_0.99Bi_0.01 barrier layer, demonstrates the tunability of the emission intensity with varying barrier thickness. Varying the Bi composition in the GaAs_1-xBi_x wells of the DQWs shows invariant peak intensity across low compositions (0.01–0.05) and a pronounced redshift over 30 meV. On the other hand, simultaneous variation of Bi compositions in both wells enables a monotonic redshift. This shows a method to realize a broadband frequency tunability. A thicker interwell GaAs_1-xBi_x barrier layer, for a specified Bi composition, can result in a relatively larger redshift. Increased carrier density boosts peak intensity. As the temperature increases, the peak intensity decreases, and the peak position undergoes a redshift. Notably, DQWs exhibit slower decay rates at high energies compared to SQWs. Furthermore, under equivalent confinement conditions, DQWs demonstrate superior emission rates relative to SQWs.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144832270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multifunctional coding metasurfaces based on polarization and propagation direction","authors":"Mingxiu Han,&nbsp;Song Tian,&nbsp;Juan Xu","doi":"10.1007/s10825-025-02392-5","DOIUrl":"10.1007/s10825-025-02392-5","url":null,"abstract":"<div><p>With the continuous research on electromagnetic (EM) metasurfaces, it has been found that a variety of EM modulation functions can be realized by polarization multiplexing and frequency multiplexing, thus forming multifunctional EM metasurfaces. However, the inherent property of EM wave propagation direction has not been effectively utilized to realize multifunctional EM devices that depend on propagation direction. Here, a multifunctional coding metasurface is proposed based on Fourier convolution operation that can achieve different functions in opposite propagation directions. As a proof of concept, the proposed multifunctional metasurface is capable of achieving orbital angular momentum (OAM) beam with mode number l = 1 and divergence angle ± 6° in the upper half-space when a circularly polarized EM wave at 13 GHz is incident. On top of this the Fourier convolution operation is superimposed to achieve anomalous reflection of the OAM beam and OAM beam splitting. When X-polarized EM wave at 12.2 GHz is incident, beam splitting can be achieved in the lower half-space. The experimental results are in good agreement with the numerical results, and this multifunctional metasurface provides a new way for the development of new multifunctional devices and paves the way for their use in other fields such as antennas and communications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144832269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The optimization of design and performance in hybrid organic/inorganic LEDs toward next-generation high-efficiency LEDs: application of multi-model hybrid machine learning approach","authors":"Ujwala S. Ghodeswar,&nbsp;Rupali S. Balpande,&nbsp;Vaishali P. Raut,&nbsp;Manisha G. Waje,&nbsp;Yoginee S. Pethe,&nbsp;Nilesh Shelke,&nbsp;Haytham F. Isleem,&nbsp;Vikrant S. Vairagade","doi":"10.1007/s10825-025-02329-y","DOIUrl":"10.1007/s10825-025-02329-y","url":null,"abstract":"<div><p>New advanced LEDs will have to be developed by developing completely new methods of modeling and optimizing semiconductor nanostructures, especially those with hybrid organic–inorganic interfaces. Traditional approaches, such as Density Functional Theory (DFT), cannot capture the richness of quantum interactions, or multi-objective design challenges taken on by such systems, which ultimately result in suboptimal device performance. In this work, we overcome these challenges by implementing a gamut of state-of-the-art computational methods suited to the complexities of hybrid nanostructures. For that purpose, Quantum-Inspired Tensor Networks are used, namely Matrix Product States and Tree Tensor Networks, to optimize the electronic and optical properties of nanostructures. These methods thus manage the high-dimensional quantum state space effectively and, with the resultant approach, enhance the accuracy of band structure predictions by 20–30%, while the efficiency of light emission is enhanced by about 15%. The next step in interface engineering was to set up SHapley Additive exPlanations (SHAP) for explainable AI such that a detailed understanding of several interface features' contributions to LED performance can be made. This has pointed out interface roughness and material composition as the most determining factors, hence guiding further optimization efforts. We use Proximal Policy Optimization (PPO)—a reinforcement learning algorithm—to improve fabrication processes. This leads to a 12% increase in the light emission intensity and a 20% reduction in the variability of the process. Finally, we employ Bayesian Optimization with Gaussian Processes (BO-GP) for effective exploration in the multi-objective design space that achieves an emission efficiency enhancement of about 18%, with material cost reduction up to 10%. Altogether, these techniques greatly advance the design, fabrication, and performance optimization of hybrid semiconductor nanostructures and represent an enabling step toward next-generation high-efficiency LEDs.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Computational analysis of perovskite solar cells for space applications","authors":"L. Vanitha,&nbsp;R. Thandaiah Prabu,&nbsp;T. D. Subha,&nbsp;Atul Kumar","doi":"10.1007/s10825-025-02335-0","DOIUrl":"10.1007/s10825-025-02335-0","url":null,"abstract":"<div><p>Solar cells deployed in extra-terrestrial environments encounter high energy particles and ionizing radiation that compromise their stability, intensifying lattice defects. The computational examination of the radiation resistance of perovskite solar cells for their prospective utilization in extra-terrestrial environments is conducted. We simulated the (1) blackening of the glass substrate and (2) displacement defect caused by proton radiation in perovskite solar cells. The reduced transmittance of glass substrate causes short-circuit current (<i>J</i>_SC). To simulate the irradiation-caused defect degradation, we utilized the defect model, which replicated the experimental observation of large <i>J</i>_SC and small decays in open-circuit voltage (<i>V</i>_OC) with fluence of 1 MeV proton radiation. Simulation shows robust radiation resistance of perovskite as performance remains stable for 1 MeV proton fluence up to 10¹³ particles.cm⁻². The results derived from the simulation reinforce the applicability of perovskite in space environments.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143944265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization and performance enhancement in PBDB-T:ITIC-based organic photodetector via SWCNT integration","authors":"Ghazi Aman Nowsherwan,&nbsp;Umar Farooq Ali,&nbsp;Aurang Zaib,&nbsp;Mohsin Khan,&nbsp;Qasim Ali,&nbsp;Nouman Nowsherwan,&nbsp;Saira Ikram","doi":"10.1007/s10825-025-02331-4","DOIUrl":"10.1007/s10825-025-02331-4","url":null,"abstract":"<div><p>The versatility of organic photodetectors (OPDs) is evident from their flexible structures and impressive performance metrics. These materials are positioned to transform optoelectronics by enabling the manufacturing of high-performance devices using cost-effective processes. This study explored the addition of single-walled carbon nanotubes (SWCNTs) to PBDB-T:ITIC-based OPDs using numerical analysis with SCAPS 1D software. The optimized modeled structure PFN:Br/SWCNT/PBDB-T:ITIC/Spiro-MeOTAD/Cu yielded a responsivity of 0.2308 A/W and a detectivity of 8.8 × 10¹³ Jones. The combination of SWCNTs with the PBDB-T:ITIC matrix significantly improved the short-circuit current density (Jsc) to 23.68 mA/cm² and open-circuit voltage (Voc) to 0.73 V. The structured OPD achieved a fill factor (FF) of 75.88% at a thickness of 200 nm for the photosensitive layer. The study also examined the impact of environmental factors, such as temperature and light intensity, and the effect of series and shunt resistance on the device output parameters. Optimal performance was observed under 1 sun illumination at room temperature (300 K), where a low series resistance (1 Ω cm²) and high shunt resistance (1000 Ω cm²) were crucial for achieving exceptional device metrics. The built-in potential (Vbi) and doping density (Nd), determined through C-V measurements, were 0.74 V and 3.24 × 10¹⁷ cm⁻³, respectively. The Nyquist plots of the optimized structure display a semicircular shape, indicating reduced recombination rates and enhanced efficiency. These findings highlight the potential of SWCNT integration for enhancing the performance and stability of OPDs, particularly in visible-range applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143938375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analyzing the impact of drain-engineered DG GNR-TFET on analog/RF performance metrics","authors":"Md Akram Ahmad,&nbsp;Bhubon Chandra Mech,&nbsp;Muzaffar Imam,&nbsp;Satyabrata Jit,&nbsp;N. Aruna Kumari","doi":"10.1007/s10825-025-02330-5","DOIUrl":"10.1007/s10825-025-02330-5","url":null,"abstract":"<div><p>This paper presents a novel drain-engineered (DE) double-gate (DG) graphene nanoribbon (GNR) tunnel field-effect transistor (TFET) designed to address the limitations of conventional DG GNR-TFETs. The proposed device introduces a p⁺-n–n configuration, replacing the conventional p⁺-i-n⁺ structure by incorporating uniform n-type doping (<i>N</i>_<i>cd</i>) in both the channel and drain regions. This structural modification enhances the electric field at the source-channel junction, significantly improving ON-state band-to-band tunneling (BTBT) current. The performance of the optimized GNR-TFET is evaluated by varying <i>N</i>_<i>cd</i>, and the optimal configuration with <i>N</i>_<i>cd</i> = 2.5 × 10¹² cm⁻² exhibits: a 5.5-order reduction in ambipolar current (<i>I</i>_<i>AMB</i>) and an improvement in the <i>I</i>_<i>ON</i><i>/I</i>_<i>OFF</i> ratio by ~6.88 × 10⁴%. Furthermore, the device demonstrates superior analog and RF performance, including: ~1.4% increase in transconductance (<i>g</i>_<i>m</i>), a ~189% enhancement in the transconductance generation factor (TGF), and ~46.2% rise in the cut-off frequency (<i>f</i>_<i>T</i>). These improvements establish the proposed DE-DG GNR-TFET as a high-performance, energy-efficient candidate for next-generation electronic and RF applications. Additionally, the optimal device exhibits superior derived RF performance, achieving enhancements of 52.2% in the transconductance frequency product (TFP), 60.3% in the gain frequency product (GFP), and 216% in the gain transfer frequency product (GTFP). Finally, a linearity analysis is conducted to compare the DE-DG GNR-TFET with the conventional GNR-TFET, further validating the effectiveness of uniform n-type doping.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143908794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel 4H-SiC MESFET with amended minimum noise figure for high-frequency applications","authors":"Zohreh Roustaie,&nbsp;Ali A. Orouji","doi":"10.1007/s10825-025-02322-5","DOIUrl":"10.1007/s10825-025-02322-5","url":null,"abstract":"<div><p>The minimum noise figure is a fundamental parameter for characterizing the noise performance of Metal Semiconductor Field Effect Transistors (MESFETs). We present a new structure of SiC-MESFET with an amended minimum noise figure. The main idea of this work is to change the channel's thickness and modify the channel's charge distribution, which leads to the modification of the curvature of the depletion region. The proposed structure consists of an asymmetrical channel thickness using a step gate. The proposed structure is an amended minimum noise figure MESFET (AMNF-MESFET). The minimum noise figure of the proposed structure is significantly improved compared to a conventional MESFET (C-MESFET). Also, the other important parameters of the AMNF-MESFET device have increased, including breakdown voltage from 160 to 210 V, cut-off frequency (<i>f</i>_T) from 20 to 36 GHz, and maximum oscillation frequency (<i>f</i>_max) from 50.55 to 61.25 GHz approximately 31%, 80%, and 21%, respectively compared to the C-MESFET. The minimum noise figure in the AMNF-MESFET is reduced from 35 to 15.5 dB at 100 GHz compared to the C-MESFET and that's a significant improvement. Therefore, the AMNF-MESFET is an excellent candidate for high voltage, high current, high-frequency, and low noise applications. </p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143875453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}