Journal of Computational Electronics最新文献

{"title":"Realization of fractal resonator cells developed on substrate-integrated waveguide for S-band filter applications","authors":"R. Surender,&nbsp;S. Oudaya coumar,&nbsp;M. Raja","doi":"10.1007/s10825-025-02310-9","DOIUrl":"10.1007/s10825-025-02310-9","url":null,"abstract":"<div><p>A compact bandpass filter based on a substrate-integrated waveguide with multiple fractal open complementary split-ring resonators is proposed herein. The proposed fractal configuration is achieved through the introduction of defected fractal cells on the conducting surface. The working principle of the proposed filter is based on evanescent-mode propagation. The fractal configuration acts as electric dipoles and generates a passband region. The bandwidth of the S-band filter is enhanced through the use of multiple fractal cells, achieving optimized performance. The SIW-based hybrid fractal is analyzed for two configurations, i.e., with and without a gap, with S₂₁ of −1.8 dB, S₁₁ of −24.75 dB, and 2–4.4 GHz for the design with the gap, and S₂₁ of −1.5 dB, S₁₁ of −31.2 dB, and 2.1–3.6 GHz without gap. The S-band filter is designed, and a prototype is measured; the simulation and measurement results are compared and found to align well.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143848986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Technical review of four different quantum systems: comparative analysis of quantum correlation, signal-to-noise ratio, and fidelity","authors":"Ahmad Salmanogli,&nbsp;Vahid Sharif Sirat","doi":"10.1007/s10825-025-02313-6","DOIUrl":"10.1007/s10825-025-02313-6","url":null,"abstract":"<div><p>The current paper investigates the different methods and approaches have been used to create microwave modes of quantum correlation. Specifically, we consider the electro-opto-mechanical, optoelectronics, 4-coupled qubits, and InP HEMT coupled with two external oscillator methods, as well as evaluate their effectiveness for quantum applications. Since these systems are open quantum systems, they interact with their own environment medium and thermal bath. To ensure an accurate comparison, we analyzed all of the systems with the same criteria. Thus, at first all systems are introduced briefly, then the total Hamiltonian is theoretically derived, and finally, the system dynamics are analogously analyzed using the Lindblad master equation. We then calculate the quantum correlation function between cavity modes, signal-to-noise ratio, and fidelity for each system to evaluate their performance. The results show that the strength and nature of the calculated quantities vary among the systems. An interesting result is the emergence of mixing behavior in the quantum correlation function and signal-to-noise ratio for systems that use different cavities. Also, it can be identified a significant similarity between the 4-coupled qubits and InP HEMT coupled with external oscillators methods, where an avoided level crossing occurs in the quantum correlation. Additionally, the study results reveal a high consistency between the signal-to-noise ratio and classical discord.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143840456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the optoelectronic properties of monolayer PtS2, ZrS2, and PtS2/ZrS2 van der Waals heterostructures under shear strain","authors":"Hang Yang,&nbsp;Lu Yang,&nbsp;Jinlin Bao,&nbsp;Huaidong Liu,&nbsp;Yanshen Zhao","doi":"10.1007/s10825-025-02318-1","DOIUrl":"10.1007/s10825-025-02318-1","url":null,"abstract":"<div><p>First-principles are employed to investigate the stability of monolayer PtS₂, ZrS₂, and the heterostructure of PtS₂/ZrS₂, along with their related optoelectronic properties. The binding energies of six stacking configurations of the heterostructures were calculated, and the stacking structure with the lowest binding energy is selected to further verify the stability of the molecular dynamics. The heterostructure under shear strain has effectively regulated the band gap, dielectric function, and light absorption while consistently maintaining a type II band alignment. After applying shear strain, the static dielectric constants of the monolayer PtS₂, ZrS₂, and PtS₂/ZrS₂ heterostructure increased by 27%, 23%, and 20%, respectively. Compared to the two monolayer structures, the shear-modified heterostructure exhibits a smaller band gap and a higher absorption coefficient, thereby broadening the application of the PtS₂/ZrS₂ heterostructure in electronic and optical engineering.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143835521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dielectric engineered charge plasma assisted JFTFET SARS-CoV-2 sensor for rapid assessment of respiratory disorder: proposal and investigation","authors":"Sukanya Ghosh","doi":"10.1007/s10825-025-02316-3","DOIUrl":"10.1007/s10825-025-02316-3","url":null,"abstract":"<div><p>Dielectric engineered (DE) field-effect transistors (FETs) have become quite popular for label-free detection of biomolecules. Nevertheless, the intrinsic short-channel effects restrict their scalability, sensitivity, and energy optimization. Consequently, to achieve the full capability of the DEFET-based biosensors, an effort to quickly identify biomarkers for the SARS-CoV-2 virus is being commenced for the first time. This utilizes a highly expandable, exceptionally sensitive, and energy-saving DE charge plasma assisted junction free tunnel FET (DE-CPA-JFTFET). The proposed architecture enables the incorporation of a nanogap cavity at the source end within the gate oxide via targeted etching, offering stability to the immobilized biomolecules. Affordable diagnostic techniques are essential to curb the transmission of infectious illnesses, including COVID-19. Utilizing the envelope, spike, and DNA proteins of the virus, a comprehensive examination of the sensitivity of the proposed sensor has been conducted by measuring the change in drain current and threshold voltage using calibrated TCAD simulations. Presence of the composite biomolecules in the nanogaps are characterized by the effective dielectric constant (<i>k</i> = 4, 10, 12) of the virus proteins including the DNA charge density variation ranging from <span>(- ,2 times 10^{12})</span> to <span>(+ ,2 times 10^{12} ,{text{C}}/{text{cm}}^{2})</span>. Present findings suggest that the proposed DE-CPA-JFTFET demonstrates an exceptionally high threshold voltage sensitivity (<i>S</i>_VTH) of 31.50, ON-state current sensitivity (<i>S</i>_ION) of <span>(sim ,459.76)</span>, a high <i>I</i>_ON/<i>I</i>_OFF exceeding seven orders of magnitude, sub-threshold swing (SS) of <span>(sim ,10,{text{mV}}/{text{dec}})</span>, making it a potential alternative to traditional FET-based biosensors. Moreover, the proposed DE-CPA-JFTFET sensor has also been analyzed by investigating the transient behavior of the drain current.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143826649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Role of metal–semiconductor contacts on the performance of (hbox {MoS}_2) field-effect transistor: an atomistic study","authors":"Ankur Garg,&nbsp;Somit Sharma,&nbsp;Avirup Dasgupta","doi":"10.1007/s10825-025-02309-2","DOIUrl":"10.1007/s10825-025-02309-2","url":null,"abstract":"<div><p>Selecting the perfect contact for the two-dimensional (2D) material-based field-effect transistor (FET) is a big challenge. The Schottky barrier arises at the metal–semiconductor contact interface from Fermi-level pinning (FLP) near the semiconductor conduction or valence band, a bottleneck in designing the FET structure. Therefore, metal–semiconductor contact is of great interest in understanding electronic device performance. This paper performs atomistic device simulations for optimal contact performance using titanium (Ti), molybdenum (Mo), gold (Au), and palladium (Pd) as a metal with monolayer <span>(hbox {MoS}_2)</span> as a channel region. The atomistic simulation includes density functional theory (DFT), maximally localized Wannier function (MLWF), and nonequilibrium Green’s function (NEGF) quantum transport for charge carriers. The FET device with Mo and Pd contact demonstrates <i>n</i>-type device characteristics, while Ti and Au show Schottky contact with <i>p</i>-type device behavior, respectively. In addition, the contact material with low work function demonstrates negative differential resistance (NDR) in the device output characteristics. Here, our study observed that the contact performance and device behavior can be completely predicted with the combination of FLP, orbital overlap, energy band diagram, and transmission spectrum. This study can be used to understand the contact performance for next technology nodes, which is still a critical issue in 2D material-based devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143824618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel hybrid design methodology for EBG structures with application to mutual coupling reduction in antenna arrays","authors":"Abdelmalek Louaifi,&nbsp;Zineb Laieb,&nbsp;Youssef Lamhene","doi":"10.1007/s10825-025-02312-7","DOIUrl":"10.1007/s10825-025-02312-7","url":null,"abstract":"<div><p>This paper presents a novel methodology for designing electromagnetic bandgap (EBG) structures, employing a hybrid approach that integrates the direct transmission method with dispersion analysis to address the limitations of conventional single approach design frameworks relying solely on dispersion analysis. By combining these techniques, the method enables a comprehensive evaluation of bandgap characteristics of binary pattern generated through binary particle swarm optimization algorithm, resulting in two uniplanar EBG geometries that achieve significant lower bandgap frequency compared to conventional counterparts. To achieve precise bandgap alignment at the desired frequency, a linear optimization process with pixel segmentation is introduced. Experimental validation through integration into a dual-element microstrip antenna array confirms the designed EBG structure’s ability to reduce mutual coupling, highlighting their effectiveness in suppressing surface waves.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143818215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Computational insight into the potential of tetraazapentacene as an active material in bulk-heterojunction solar cells","authors":"Pankaj Kumar Kushwaha,&nbsp;Vinay Sharma,&nbsp;Sunil Kumar Srivastava","doi":"10.1007/s10825-025-02315-4","DOIUrl":"10.1007/s10825-025-02315-4","url":null,"abstract":"<div><p>Bulk heterojunction (BHJ) organic solar cells (OSCs) represent a class of thin-film photovoltaic devices that harness the unique properties of organic semiconductors. Despite remarkable progress, BHJ OSCs still face challenges related to stability, scalability, and long-term performance. This paper presents a thorough and comprehensive computational exploration of the potential viability of tetraazapentacene (TAP) as an active material in BHJ solar cells, utilizing a synergistic approach that combines density functional theory (DFT) and TD-DFT calculations. Our study is centered on investigating the impact of molecular modifications by exchanging CH with nitrogen in the pentacene framework on the overall performance as well as electrical and optoelectronic properties. This approach provides meaningful design recommendations for TAP's usage in OSC applications. The series of TAP structures (with and without inversion symmetry) were analyzed to see the effect of nitrogen incorporation on energy levels, bandgap, reorganization energy, electron and hole delocalization, charge transfer, and charge carrier mobility. Our findings, as revealed by the electron density distribution map, electron delocalization analysis e.g., electron localization function, local orbital locator, transition density matrix, and frontier molecular orbital analysis, suggest that the TAP may allow easier electron injection owing to its lower LUMO level and high EA value. TDM analysis reveals that TAPs lacking inversion symmetry exhibit higher electron–hole coherence across the structure, resulting in efficient electron transport. Applying the Scharber model formalism and utilizing TAPs as donors and PCBM as acceptors in BHJ solar cells, the power conversion efficiency was estimated to be approximately ~ 28%.</p><h3>Graphical abstract</h3><p>This study explores the potential of Tetraazapentacene (TAP) as an active material in bulk heterojunction (BHJ) organic solar cells through Density Functional Theory (DFT) and TD-DFT analyses. By substituting CH groups with nitrogen in the pentacene framework, the impact on optoelectronic and electrical properties is examined. TAP structures lacking inversion symmetry demonstrate enhanced electron delocalization, increased electron affinity, and stronger electron–hole coherence, which collectively improve electron transport. Utilizing the Scharber model, with TAP as the donor and PCBM as the acceptor, the estimated power conversion efficiency (PCE) reaches approximately 28%.</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143809143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of waveguide dimensions on split-core optical waveguide for dispersion and supercontinuum applications","authors":"V. Hitaishi,&nbsp;Jayakrishnan Kulanthaivel,&nbsp;Nandam Ashok","doi":"10.1007/s10825-025-02311-8","DOIUrl":"10.1007/s10825-025-02311-8","url":null,"abstract":"<div><p>This article presents the theoretical study of a novel chalcogenide optical waveguide. The core of waveguide consists of two D-shaped structures separated by a slab. The cladding is a rectangular slab containing a core within its dimensions. The chalcogenides GeAsSe and GeAsS are considered to be core and cladding of the waveguide, respectively. The dispersion effects and supercontinuum (SC) were calculated for various values of the radius of the top D-shaped core (<i>D</i>) and offset distance (<i>d</i>) from the right end of the bottom core. SC is generated by pumping 50 fs secant hyperbolic (sech) pulses at 1 kW peak power at 3.5 µm as a central wavelength. The maximum wide-spectrum, ranging from 2.2 to 6.5 µm was obtained for <i>D</i> = 1.7 µm and <i>d</i> = 0.4 µm. Increase in ‘<i>d</i>’ leads to a uniform intensity of output SC spectra with sacrificing a small amount of broadening. These results should be useful to create SC sources with uniform intensity as well as broad spectrum in the near to mid-infrared regions.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143809295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Parameters identification of photovoltaic cell and module models based on the CSAO algorithm","authors":"Yiping Xiao,&nbsp;Haiyang Zhang,&nbsp;Honghao Wei,&nbsp;Chao Wang,&nbsp;Song Wu,&nbsp;Jun Shu","doi":"10.1007/s10825-025-02290-w","DOIUrl":"10.1007/s10825-025-02290-w","url":null,"abstract":"<div><p>Photovoltaic cell models involve nonlinear and complex parameters, and traditional identification methods often suffer from slow convergence and local optima issues, limiting their efficiency. Metaheuristic algorithms have been developed to enhance the accuracy and efficiency of parameter identification. This paper proposes a coati improved snow ablation optimization (CSAO) incorporating Weibull distribution and elite retention. First, a random probability mechanism combines the coati optimization algorithm with the basic snow ablation optimization, enhancing its global search capability. Second, a search mechanism based on Weibull distribution is incorporated to broaden the search range during local exploitation, helping to avoid falling into local optima. Finally, an elite retention strategy is added to accelerate convergence speed. The CSAO algorithm was evaluated using the CEC2017 benchmark function set. The CSAO algorithm was used for parameter identification of three photovoltaic models (single-diode, double-diode, and triple-diode) and three types of photovoltaic modules named Photowatt-PWP201, STM6-40/36, and STP6-120/36 respectively. Experimental results demonstrate that, compared to other algorithms, CSAO provides more accurate and stable parameter identification for photovoltaic cells and modules, along with faster convergence.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143778157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Algebraic patterns, protocols, and pseudocode for a Quine–McCluskey minimization in lieu of the prime implicant chart","authors":"Elizabeth Abraham","doi":"10.1007/s10825-025-02278-6","DOIUrl":"10.1007/s10825-025-02278-6","url":null,"abstract":"<div><p>Digital gates are the basic electronic component of digital circuits. These circuits perform best when they are simplified as this directly leads to reducing the number of digital gates to implement a logical function, thereby reducing the circuit cost. To do this, Boolean expressions need to be optimally minimized. Karnaugh (K-map) and the Quine–McCluskey (Q–M) methods are well-known techniques to simplify Boolean techniques. K-map executions become complex for many valued functions. Comparatively, the Q–M method is a computer-based faster approach for logic function-based simplification. However, the Q–M method becomes intolerable for many valued logical functions along with its computational complexity and intensiveness simultaneously increasing. Hence, in this study an algebraic sum (A-sum) and cross-check sum (CCS) is proposed, primarily to aid in computationally efficient pairing of high numbered groups particularly for many valued logical functions and secondly to check the correctness of the paired groups as a manner to review the sanctity of the paired groups. In addition, broadly six postulates are proposed to forego the prime implicant chart in the Q–M method. In this study, the expounding of the prior through examples show that by reducing the number of computations from that which would be typically required of by the conventional Q–M method, the performance of the Q–M method is increased along with the reduction of the possibility of an error and an accurate minimization. The results can be expanded to an n-numbered logic function leading to more hardware efficient circuits. Moreover, the postulate approach is simpler, more efficient with less effort than with the use of the prime implicant tables. The proposed approach is a useful aid for both academics and industrialists where logic, digital and circuit design takes precedence at optimal performance.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 3","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-025-02278-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143778158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}