Journal of Computational Electronics最新文献

{"title":"Grain boundary-induced threshold voltage shift in dual-gate ZnO TFTs: an analytical and simulation approach","authors":"Shilpi Singh,&nbsp;Saurabh Jaiswal,&nbsp;Manish Goswami,&nbsp;Kavindra Kandpal","doi":"10.1007/s10825-025-02428-w","DOIUrl":"10.1007/s10825-025-02428-w","url":null,"abstract":"<div><p>An oxide-based dual-gate thin film transistor (DGTFT) is considered an attractive option for flat panel displays due to its exceptional optical transparency and electronic performance. In this study, we use ZnO as an oxide semiconductor material for the channel region having rectangular multiple grain boundaries (GBs) and HfO₂ as gate dielectric to analyze the effect of GBs on the performance of DGTFT. It is challenging to precisely determine the threshold voltage (<i>V</i>_th) in accumulation-mode TFTs due to trap states within the GBs in a disordered semiconductor. In the proposed work, when depleted these GBs are modeled as a continuous line of charge with a Gaussian trap distribution, resulting in an analytical expression correlating the <i>V</i>_th to the GB trap density. It shows that the <i>V</i>_th increases as GB trap density increases. Additionally, the effect of multiple GBs on the electrical properties of a double-gate ZnO TFT is examined using TCAD at various trap energy levels (<i>E</i>_mid) and trap change densities (<i>N</i>_<i>t</i>). The performance of DGTFT is analyzed in CMG (common-mode-gate) and GTG (grounded-top-gate) modes. It was observed that for 40 GBs with increasing trap concentration from 10¹⁰ to 10¹² cm⁻² eV⁻¹, the <i>V</i>_th value rises from 0.5 to 1.4 V in CMG Mode. In contrast, GTG mode increases the <i>V</i>_th value from 1.0 to 2.2 V.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145168883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum information measurements of the exact solution of the Schrödinger equation for a q-deformed Morse potential","authors":"Allan R. P. Moreira,&nbsp;Abdelmalek Bouzenada,&nbsp;Faizuddin Ahmed","doi":"10.1007/s10825-025-02422-2","DOIUrl":"10.1007/s10825-025-02422-2","url":null,"abstract":"<div><p>We present a comprehensive numerical and analytical study of information-theoretic measures–specifically, the Shannon entropy in position (<span>(S_x)</span>) and momentum (<span>(S_{p_x})</span>) spaces, for a non-relativistic fermion subject to a <i>q</i>-deformed Pöschl–Teller-like hyperbolic potential, including comparisons with the <i>q</i>-deformed Morse potential. By systematically varying the deformation parameter <i>q</i>, the inverse length scale <span>(alpha)</span>, and the potential depth <span>(V_0)</span>, we investigate their combined influence on spatial localization, uncertainty, and the global and local information content of the quantum states. Our results show that <i>q</i> induces a controllable trade-off between <span>(S_x)</span> and <span>(S_{p_x})</span>, while preserving their sum; <span>(alpha)</span> predominantly enhances total uncertainty, signaling increased delocalization; and <span>(V_0)</span> favors spatial localization at the cost of momentum spread. All configurations obey the Bialynicki-Birula–Mycielski (BBM) inequality, confirming the robustness of the approach. These findings underscore the deep connection between potential geometry and quantum information measures, with prospective implications for deformed quantum systems, relativistic extensions, and Lorentz symmetry-violating frameworks.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145169041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Realization of elementary reversible BVF gate and reversible full adder using optical ring resonators","authors":"Kamal Kishor Choure,&nbsp;Ankur Saharia,&nbsp;Rahul Pandey,&nbsp;Nitesh Mudgal,&nbsp;Manisha Prajapat,&nbsp;Manish Tiwari,&nbsp;Ghanshyam Singh","doi":"10.1007/s10825-025-02423-1","DOIUrl":"10.1007/s10825-025-02423-1","url":null,"abstract":"<div><p>This manuscript investigates the mathematical modeling of a silicon nitride-based all-optical BVF reversible gate and reversible full adder modeled using an optical ring resonator (ORR). The design parameters of the proposed ORR are optimized to implement the desired mathematical model of reversible logic devices for all-optical computing. The capability of the proposed device is validated by the evaluated figure of merits like quality factor of 7750, contrast ratio of 19.54 dB, and extinction ratio of 20.29 dB. The CMOS compatibility nature of the silicon nitride-based structures also verifies the practical feasibility of the proposed device.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145168496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A hybrid artificial intelligence framework for predicting electrical and thermal properties of graphene nanoplatelet-enhanced nanoelectronic materials","authors":"Bhaskarrao Yakkala,&nbsp;M. Raja,&nbsp;V. Elumalai,&nbsp;B. Muthuraj,&nbsp;L. Umasankar","doi":"10.1007/s10825-025-02421-3","DOIUrl":"10.1007/s10825-025-02421-3","url":null,"abstract":"<div><p>The rapid advancement of nanoelectronics demands materials with exceptional electrical and mechanical properties to support the development of high-performance, miniaturized devices. Graphene nanoplatelets (GNPs), a promising nanomaterial, have demonstrated significant potential in enhancing materials' electrical and structural characteristics at the nanoscale. This study explores the influence of GNPs on the electrical conductivity (EC) and compressive strength (CS) of nanoelectronic components, leveraging experimental investigations and advanced deep learning (DL) models, including non-autoregressive recurrent neural networks (NARNNs), verifiable convolutional neural networks (VCNNs), and Tsukamoto type-2 fuzzy inference system (TT2FIS). Experimental results revealed that the incorporation of GNPs at concentrations of 0.05% and 0.1% improved EC by 28.7% and 35.2%, respectively, while enhancing CS by 18.4% and 22.6%. These findings highlight the potential of GNP-enhanced materials for use in nanoelectronic devices that demand both high EC and mechanical reliability under thermal conditions. DL models demonstrated outstanding accuracy in predicting the properties of GNP-enhanced materials, with VCNNs achieving the highest performance. For EC predictions, VCNNs achieved a correlation coefficient (<i>R</i>) of 0.989, outperforming NARNNs (<i>R</i> = 0.976) and TT2FIS (<i>R</i> = 0.963). For CS, VCNNs exhibited an <i>R</i>-value of 0.993, compared to NARNNs (<i>R</i> = 0.982) and TT2FIS (<i>R</i> = 0.970). Error analysis further validated the superiority of VCNNs, as the mean square error (MSE) for EC predictions was 15.4% lower than NARNNs and 48.7% lower than TT2FIS. Similarly, for TS predictions, VCNNs achieved an MSE reduction of 12.8% compared to NARNNs and 51.3% compared to TT2FIS. SHapley Additive exPlanations analysis identified GNP concentration as the dominant factor influencing both EC and TS, followed by curing conditions. These results highlight the possible of DL-driven methods, particularly VCNNs, in optimizing GNP-enhanced materials for nanoelectronic applications, offering a fast and cost-effective pathway to design advanced materials for next-generation electronic devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145168391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A delay-constrained optimization framework for low-power VLSI interconnect design using mathematical signal models","authors":"V. Rajkumar,&nbsp;R. Amutha","doi":"10.1007/s10825-025-02416-0","DOIUrl":"10.1007/s10825-025-02416-0","url":null,"abstract":"<div><p>As VLSI technology scales to sub-7 nm nodes, interconnect-related delay and power dissipation become dominant design bottlenecks. This paper presents a comprehensive mathematical framework for modeling and optimizing interconnects in very-large-scale integration (VLSI) systems under delay constraints. Leveraging signal processing theory and circuit-level modeling, we introduce an enhanced delay model incorporating Elmore delay, crosstalk effects, and capacitive coupling. A constrained optimization strategy using Lagrangian relaxation and Karush–Kuhn–Tucker conditions is applied to minimize dynamic power while preserving signal integrity. Simulation results on 7 nm process technology demonstrate that the proposed method achieves up to 23% reduction in power with marginal delay overheads. Our framework is validated using HSPICE and Cadence Spectre on standard ISCAS85 and OpenCore benchmarks, providing a practical path to energy-efficient interconnect design.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145110525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cutting-edge dyes for p-type dye-sensitized solar cells: a theoretical study of 1,8-naphthalene imide derivatives","authors":"Emre Burak Yurdakul,&nbsp;Abdullah Yildiz,&nbsp;Sule Erten Ela,&nbsp;Yusuf Erdogdu","doi":"10.1007/s10825-025-02417-z","DOIUrl":"10.1007/s10825-025-02417-z","url":null,"abstract":"<div><p>We report a theoretical investigation of the designed 1,8-naphthalene imide-based dyes for application in <i>p</i>-type dye-sensitized solar cells (<i>p-</i>DSSCs). The designed dyes are metal-free organic molecules combined with a carbazole donor, a naphthalene imide acceptor, and a cyanocarboxylic acid anchoring group. Different linkers, including benzothiadiazole, phenyl, furan, and thiophene, were introduced to modify their properties. The <i>p</i>-DSSCs were theoretically evaluated with five various <i>p</i>-type semiconductors (CuO, Cu₂O, CuGaO₂, CuCrO₂, and CuAlO₂) and six various electrolytes based on cobalt and copper complexes. Computational analysis was performed by means of Density Functional Theory (DFT) and Time-Dependent DFT (TD-DFT). For all designed dye, the HOMO levels were sited below the valence band of the semiconductors, while the LUMO levels were located above the redox potential of the electrolytes. This alignment confirms hole injection and dye regeneration. The results show that the dyes, especially those with benzothiadiazole and phenyl linkers, are promising dyes for improving <i>p-</i>DSSC efficiency through enhanced light harvesting, effective charge separation, and reduced recombination losses. These findings contribute valuable insights into the design of high-performance <i>p</i>-type photosensitizers for tandem DSSC applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Innovative pathways to efficiency in organic solar cells: a DFT perspective on small donors","authors":"Muhammad Sajid,&nbsp;Wajeeha Fatima,&nbsp;Khuram Ali,&nbsp;Hafiza Saima Batool,&nbsp;Esha Fatima,&nbsp;Suriani Abu Bakar","doi":"10.1007/s10825-025-02418-y","DOIUrl":"10.1007/s10825-025-02418-y","url":null,"abstract":"<div><p>Innovative small molecule donors (SMDs) in organic solar cells (OSCs) have gained attention due to their high absorbance and tunable band gaps, enabling improved efficiency and performance. In this study, three novel SMDs (M1, M2, and M3) were proposed by modifying terminal hydrogen atoms with fluorine (M1), methyl (M2), and methoxy (M3) groups. These substitutions were systematically analyzed for their effects on structural, electronic, and optical properties using density functional theory (DFT). The HOMO–LUMO energy gaps were found to be 2.03 eV (M1), 2.02 eV (M2), and 2.00 eV (M3). M3 also exhibited the highest absorption wavelength (<i>λ</i>_max) of 743 nm, the lowest excitation energy (1.67 eV), and the highest light-harvesting efficiency (LHE = 0.9996). Charge transfer analyses showed that M3 had the lowest electron reorganization energy (<i>λ</i>_e = 0.0046 eV), indicating superior charge mobility. These findings suggest that M3 is the most promising candidate for efficient OSC applications. Computations were performed using the Gaussian 09 suite, employing the B3LYP functional with the 6-31G(d,p) basis set and TD-DFT for excited state calculations. Solvent effects were considered using the PCM model, and CAM-B3LYP was used for excitation energy validation.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145062266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spin-NeuroMem: a low-power neuromorphic associative memory design based on spintronic devices","authors":"Siqing Fu,&nbsp;Lizhou Wu,&nbsp;Tiejun Li,&nbsp;Chunyuan Zhang,&nbsp;Jianmin Zhang,&nbsp;Sheng Ma","doi":"10.1007/s10825-025-02415-1","DOIUrl":"10.1007/s10825-025-02415-1","url":null,"abstract":"<div><p>Biologically inspired computing models have made significant progress in recent years, but the conventional von Neumann architecture is inefficient for the large-scale matrix operations and massive parallelism required by these models. This paper presents Spin-NeuroMem, a low-power circuit design of a Hopfield network for the function of associative memory. Spin-NeuroMem is equipped with energy-efficient spintronic synapses which utilize magnetic tunnel junctions (MTJs) to store weight matrices of multiple associative memories. The proposed synapse design achieves as low as 17.4% power consumption compared to the state-of-the-art synapse designs. Spin-NeuroMem also encompasses a novel voltage converter with a 53.3% reduction in transistor usage for effective Hopfield network computation. In addition, we propose an associative memory simulator for the first time, which achieves a 5 M<span>(times)</span> speedup with a comparable associative memory effect. By harnessing the potential of spintronic devices, this work paves the way for the development of energy-efficient and scalable neuromorphic computing systems.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bridging classical and quantum dynamics with the Wigner–Moyal equation","authors":"Kyoung Yeon Kim","doi":"10.1007/s10825-025-02426-y","DOIUrl":"10.1007/s10825-025-02426-y","url":null,"abstract":"<div><p>We present a numerical framework for solving the Wigner–Moyal equation. While Moyal’s form is renowned for its similarity to classical dynamics, it has remained unusable for several decades due to severe numerical instability. This instability arises from the Moyal bracket not being constrained by the uncertainty principle, resulting in unbounded nonlocality. We demonstrate that excessive nonlocality can be suppressed by expanding the observation window to the uncertainty limit, rendering the problem well-posed. Our approach naturally reduces to the Boltzmann equation in regions where quantum effects are negligible; opening a new device simulation methodology that bridges classical and quantum dynamics.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145062282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved parameter estimation of triple-diode photovoltaic systems","authors":"Oluwasegun Ajetunmobi,&nbsp;Talha Ali Khan,&nbsp;Syed Arslan Abbas Rizvi,&nbsp;Raja Hashim Ali","doi":"10.1007/s10825-025-02405-3","DOIUrl":"10.1007/s10825-025-02405-3","url":null,"abstract":"<div><p>Accurately modeling solar photovoltaic (PV) systems requires extracting a set of unknown parameters, it is a complex, nonlinear optimization problem involving multiple variables. This study introduces six targeted modifications to the improved whale optimization algorithm (IWOA), designed to enhance its efficiency and reliability. By incorporating a blend of algebraic and transcendental functions, these modifications improve the algorithm’s ability to balance exploration and exploitation. Performance was evaluated through ten benchmark functions, with results analyzed statistically. The enhanced algorithm was then applied to estimate nine unknown parameters in the three-diode PV model, known for its high accuracy in simulating real PV behavior. Validation against real-world data from commercial PV modules, such as the KC200GT and MSX-60, demonstrated that the modified IWOA can generate highly precise models. The results confirm the algorithm’s potential as a practical and robust tool for PV system modeling.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145037379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}