Journal of Computational Electronics最新文献

{"title":"Improved passivation and antireflection techniques for higher-efficiency Interdigitated Back Contact (IBC) solar cells","authors":"Alamgeer,&nbsp;Muhammad Quddamah Khokhar,&nbsp;Hasnain Yousuf,&nbsp;Rafi Ur Rahman,&nbsp;Polgampola Chamani Madara,&nbsp;Mengmeng Chu,&nbsp;Muhammad Tahir,&nbsp;Sangheon Park,&nbsp;Junsin Yi","doi":"10.1007/s10825-025-02289-3","DOIUrl":"10.1007/s10825-025-02289-3","url":null,"abstract":"<div><p>In this article, we simulated the Interdigitated Back Contact (IBC) solar cell using Quokka3 simulation, highlighting a detailed approach to front and back passivation and sheet resistance that significantly enhances cell performance. The antireflective coating (ARC) and the front passivation layer, after fine-tuning variation of recombination current density <i>J</i>₀ (fA/cm²), dictate the recombination losses at these interfaces, therefore playing a critical role on cell efficiency. The rear passivation layer complements the front in mitigating recombination to optimize light capture within the silicon wafer. When the emitter fraction is approximately 40% at 100 Ω/Sq, the rear boron sheet resistance showed the enhanced <i>V</i>_oc, <i>J</i>_sc, FF, and η as 719.2 mV, 41.66 mA/cm², 84.71%, and 25.2%. These results demonstrate how <i>J</i>₀ and rear boron area variability, influenced by both front and back passivation, affects the FF and η of the IBC cell. Furthermore, variations in the bulk lifetime of crystalline silicon (c-Si), resistivity of the wafer, and rear boron sheet resistance (<i>R</i>_sh) offer pathways to improve overall cell performance.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143475136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Transfer learning-based parameter optimization for improved 3D NAND performance","authors":"Dibyadrasta Sahoo,&nbsp;Ankit Gaurav,&nbsp;Sanjeev Kumar Manhas","doi":"10.1007/s10825-025-02292-8","DOIUrl":"10.1007/s10825-025-02292-8","url":null,"abstract":"<div><p>Process variation leads to variability in key device parameters such as plug separation, recess depth, epi-plug doping, and epi-plug height, which play a vital role in 3D NAND performance during scaling. Machine learning (ML) offers an alternate approach to predict and optimize performance by analyzing variable nonlinearity. However, in recent work, device optimization has been done over a narrow range, resulting in local rather than global optima. Additionally, these methods rely on extensive datasets, which increase costs and reduce the practicality of TCAD-ML models. This paper uses transfer learning to optimize the above parameters by integrating a long short-term memory (LSTM) model with the JAYA optimization algorithm. This approach considers a wide range of device parameters for optimization. By training on well-calibrated TCAD-generated data, we achieve an impressive accuracy rate of 98.5% in forecasting the values of threshold voltage (<i>V</i>_th), on current (<i>I</i>_on), subthreshold swing (SS), and transconductance (<i>g</i>_<i>m</i>). Our results reveal that the LSTM uses fewer datasets and outperforms feedforward neural networks with a performance improvement of 67%. Further, we achieve a mean-squared error of 0.217 using the JAYA optimization algorithm.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143471971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly doped and optimized 5-nm GAA CNTFET with different perspectives","authors":"Mahmood Rafiee,&nbsp;Nabiollah Shiri,&nbsp;Ayoub Sadeghi","doi":"10.1007/s10825-025-02288-4","DOIUrl":"10.1007/s10825-025-02288-4","url":null,"abstract":"<div><p>The invention of new transistors and their channel length reduction are challenging processes. The carbon nanotube field-effect transistor (CNTFET), especially the gate-all-around (GAA) type, is an encouraging technology to solve the short channel effect. In this paper, changing doping concentration and finding the best coordination for contacts and spacer are promising approaches that are discussed. A highly doped 5 nm GAA CNTFET is presented and its functionality is evaluated in the device, layout, and circuit states. By the Monte Carlo method, the best structure coordination of drain and source contacts, spacer, width, and height are extracted. The device is evaluated for different supply voltages and the best voltage for its operation is 0.5 V. The concentration of dopants for <i>n</i>-type devices is found to be <i>N</i>_D0 = 1 × 10²¹ cm⁻³ and <i>N</i>_A = 1 × 10¹⁸ cm⁻³ for the donor and acceptor, respectively, and for the <i>p</i>-type, <i>N</i>_A and <i>N</i>_D0 are replaced. Also, the <i>I</i>_on/<i>I</i>_OFF ratio of <i>n</i>-type and <i>p</i>-type are 2.3 × 10⁴ and 1.6 × 10⁴, respectively, which are achieved by double optimization. The optimized devices are implemented in an inverter. The resulting noise margin of the inverter demonstrates its high accuracy. The customized device is a qualified candidate for sophisticated structures.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of integrated nanomaterials using deep learning method-based Mantis search algorithm","authors":"L. Gowrisankar,&nbsp;J. Ganesh Murali,&nbsp;Y. Dominic Ravichandiran","doi":"10.1007/s10825-025-02284-8","DOIUrl":"10.1007/s10825-025-02284-8","url":null,"abstract":"<div><p>The characterization of silver nanoparticles is vital for understanding unique properties and potential applications in various fields. This research aims to explore and evaluate characterization techniques to assess the quality and behavior of silver nanoparticles. Understanding characteristics is crucial for optimizing synthesis methods and ensuring safe and effective use in nanotechnology applications. In this research, bidirectional long short-term memory-Mantis search algorithm is deployed to characterizations of silver nanoparticle and also evaluates the characteristics of silver nanoparticle such as the accuracy, precision, recall, and f1-score values are recorded. The outcome of the recommended technique is implemented in MATLAB and benchmarked against existing approaches, demonstrating its effectiveness in achieving the proper characterization. The results indicate that the given approach outperforms existing techniques, demonstrating its effectiveness and also reduces the weighted square error by 0.6 and enhances the precession by 98.8%. This signifies not only the effectiveness, but also the efficiency of the given approach, indicating its potential for streamlining characterization processes and enhancing productivity in nanotechnology research and development.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Detection of protozoa in drinking water using SPR biosensor employing titanium dioxide and MXene nanomaterial","authors":"Malek G. Daher,&nbsp;Sofyan A. Taya,&nbsp;Osama S. Faragallah,&nbsp;Shobhit K. Patel,&nbsp;Yogenra Kumar Prajapati,&nbsp;Ammar Armghan","doi":"10.1007/s10825-025-02280-y","DOIUrl":"10.1007/s10825-025-02280-y","url":null,"abstract":"<div><p>Water is one of the essential requirements for human life. Various types of impurities that are present in the drinking water can produce grave health concerns, affect body tissues, and may lead to death. Protozoan parasites are one of the major biological pollutants in the water, which are ordinarily transferred across during the oral-fecal path. <i>Cryptosporidium parvum</i> oocysts (CPO) and <i>Giardia lamblia</i> (GL) are two frequently observed waterborne protozoan organisms. They have different values of index of refraction (IOR). Novel detector can be established with real-time detection based on this biophysical consideration. Here, an optical surface plasmon resonance biosensor (OSPRB) is developed for discovery of CPO and GL in drinking water. Angular examination and Kretschmann design are employed to explain the conception of the setup. An angular sensitivity (AS) of 188 Deg./RIU is attained by the suggested OSPRB with very low limit of detection (LOD) of 2.64 × 10⁻⁵ RIU. Other functioning factors are calculated for offered OSPRB. The achieved outcomes indicate that the suggested OSPRB has conspicuously improved performance as contrasted to aforementioned outcomes in the literatures. The suggested OSPRB can accelerate a substantial biological detecting tool with accurate and fast sensing at early point.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143396634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced single-diode model parameter extraction method for photovoltaic cells and modules based on integrating genetic algorithm, particle swarm optimization, and comparative objective functions","authors":"Ali Kareem Abdulrazzaq,&nbsp;György Bognár,&nbsp;Balázs Plesz","doi":"10.1007/s10825-025-02282-w","DOIUrl":"10.1007/s10825-025-02282-w","url":null,"abstract":"<div><p>Accurate modeling of the operational behavior of photovoltaic systems is crucial to optimizing and predicting system performance. One of the well-established and widely used modeling techniques is the single-diode equivalent circuit that delivers a sufficiently accurate description of the electric behavior of both photovoltaic cells and modules under various operational conditions. The single-diode model uses five parameters to reproduce the <i>I-V</i> curve for specific operational conditions. However, these five parameters must be extracted from measured or simulated <i>I-V</i> curves. This paper proposes a novel, accurate, and fast method for extracting the single-diode model’s five parameters from measured <i>I-V</i> curves based on a genetic algorithm combined with particle swarm optimization to find the optimal controlling parameters of the genetic algorithm. This approach results in a significant performance improvement in accuracy and convergence speed. The paper also proposes a concept for determining the optimum number of current–voltage data points in the <i>I-V</i> curve, enabling an optimum trade-off between a sufficiently high accuracy and computational costs. Finally, the effect of different objective function formulations on the result has been investigated by comparing the usage of three different objective functions: the implicit form of the single-diode model, the Lambert W-function-based formulation of the explicit single-diode model, and a system of equations based on least square fitting. From the results, it could be concluded that the implicit formulation of the single-diode model delivered the best results compared to the two other formulations. Performance evaluations showed significantly lower error values than recent literature, with mean percent errors of 0.038%, 0.34%, and 0.87% received for the investigated monocrystalline cell, poly-crystalline module, and amorphous module, respectively. The computational cost was reduced by more than 60% after determining the optimum number of <i>I-V</i> points per curve, which was in the range of 20–30 points for each measured curve.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-025-02282-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143379809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Heterojunction active layer MAPbI3/CsPbI3 design for high-performance perovskite solar cells: a computational analysis achieving 20.5% efficiency","authors":"Darko Abdalla Noori","doi":"10.1007/s10825-025-02283-9","DOIUrl":"10.1007/s10825-025-02283-9","url":null,"abstract":"<div><p>This simulation study employed three distinct perovskite solar cell (PSC) structures: double electron transport layer (DETL) composed of (10–50 nm) TiO₂/ (50 nm) ZnO, double hole transport layer (DHTL) incorporated of (20–100 nm) MoO_<i>x</i>/ (200 nm) Spiro-OMeTAD, and double active layer (DAL) consisted of (300 nm) MAPbI₃/ (50–150 nm) CsPbI₃ based PSCs separately. These configurations aimed to increase the charge carrier population and enhance fast electron and hole injection toward the electrodes in PSCs-based MAPbI₃. Then, a morphological simulation study was conducted to evaluate the spatial distribution of the electron charge carrier density within the ETL, HTL, and perovskite materials. Additionally, the investigation delved into charge carrier density, charge carrier generation, and recombination within the thin-film materials, and compared the performance of single and doubling layers in PSCs. Notably, the simulation results demonstrated a remarkable power conversion efficiency (PCE) of 20.52% for the heterojunction active layer structure, surpassing the PCE of 19.8% and 18.5% were achieved for the DHTL and DETL configuration, respectively. Moreover, the PCE of the cell enhanced by 29% with the DAL (300-nm MAPbI₃/150-nm CsPbI₃) structure compared to the reference cell. This study provides meaningful information for advancing the realm of high-efficiency planar PSCs founded on double absorber layer structure.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143108628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Material-driven optimization of CdTe/gold interfaces to boost NIR performance in nanostructured solar cells","authors":"Mohammedasif Rahamathulla,&nbsp;Dinesh Kumar,&nbsp;Sheela K. Ramasesha,&nbsp;Jayesh Cherusseri","doi":"10.1007/s10825-025-02281-x","DOIUrl":"10.1007/s10825-025-02281-x","url":null,"abstract":"<div><p>This study investigates the optimization of the near-infrared (NIR) performance of CdS/CdTe nanowall-based solar cells through strategic engineering of the CdTe/gold interface. The effect of including various materials, including lead telluride (PbTe), lead sulfide (PbS), germanium telluride (GeTe), molybdenum ditelluride (MoTe₂), copper telluride (Cu₂Te), and tin telluride (SnTe), has been studied using the device physics-based simulations TCAD software Silvaco. The effect of these materials on NIR absorption and charge carrier dynamics is evaluated through in-depth simulations of current–voltage characteristics, internal quantum efficiency (IQE), and energy band diagrams. Our results reveal that MoTe₂ offers the optimal trade-off between IQE and key photovoltaic parameters, exhibiting superior performance across a broad spectral range, with particular excellence in the NIR region. The study reveals the pivotal role of heterojunction types formed at the CdTe/interfacial material interface on device performance. This study reveals critical material-performance relationships in nanostructured solar cells, offering a valuable insight to aid in optimizing NIR response for the development of advanced photovoltaics.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143108047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Computer simulations of a four-element array antenna using polyethylene (PE) substrate and parameter analysis for compact, flexible wireless applications","authors":"R. Ramyea,&nbsp;Senthil Kumar Kandasamy,&nbsp;N. Kasthuri","doi":"10.1007/s10825-024-02272-4","DOIUrl":"10.1007/s10825-024-02272-4","url":null,"abstract":"<div><p>Flexible wireless applications in the C band microwave region require a conformal wideband antenna that resonates equally in all directions. In this paper, a polymer substrate-based array antenna is designed at an operating frequency of 7.3 GHz covering a bandwidth from 5 to 8 GHz. Conventional substrates such as FR4 (flame-retardant) have certain operational constraints with regard to high power, gain, and high dielectric constant (4.4), which results in a narrow impedance bandwidth and high return loss. In order to reduce this, a thermally stable and low-dielectric-constant (2.25) polyethylene (PE) substrate-based antenna is designed with a four-element array. The designed antenna is simulated, and its results are analysed and compared for both substrates. The gain and directivity increased to 6.25 and 6.45 dB, respectively. The return loss and voltage standing wave ratio (VSWR) reduced to −32.57 dB and 0.33. The radiation efficiency for the proposed four-element array antenna with polyethylene substrate was 96.8%. Thus, the resultant gain and efficiency of the polymer substrate antenna are improved compared with conventional antennas. The fabricated four-element array antenna with PE substrate provides a −22.25-dB return loss and standing wave ratio less than 2 through real-time testing at 7.3 GHz.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143110037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improving the efficiency and performance of Rb2SnI6-based perovskite solar cells through comprehensive optimization: a numerical study","authors":"Minhaz Ul Alam,&nbsp;Md. Kamrul Islam Shifat,&nbsp;Jibon Krishna Modak,&nbsp;Md. Tarekuzzaman,&nbsp;Md. Ismail Haque,&nbsp;Md. Rasheduzzaman,&nbsp;Md Abdul Qader,&nbsp;Riazul Islam,&nbsp;Yasir Arafat,&nbsp;Md. Zahid Hasan","doi":"10.1007/s10825-024-02276-0","DOIUrl":"10.1007/s10825-024-02276-0","url":null,"abstract":"<div><p>In this study, we explored the optimal performance of perovskite solar cells (PSCs) using the tin-halide material Rb₂SnI₆. This study focuses exclusively on the electrical properties of the devices, as simulated using SCAPS-1D software (solar capacitance simulator). The SCAPS-1D was employed to improve the device in the Rb₂SnI₆-based PSC, which utilized tungsten disulfide (WS₂) as the electron transport layer and cadmium telluride (CdTe) as the hole transport layer (HTL). To identify the most suitable electron transport layer (ETL), we initially investigated WS₂, SnS₂, PCBM, and C₆₀. The ITO/WS₂/ Rb₂SnI₆/CdTe/Ni structure proved to be the most effective ETL after extensive investigation, demonstrating a power conversion efficiency (PCE) of 24.95%, a Voc of 1.0896 V, a Jsc of 44.6795 mA cm², and an FF of 82.71%. Subsequently, we evaluated the impact of the absorber thickness, ETL thickness, and defect density on the device’s effectiveness in the Rb₂SnI₆, WS₂, and CdTe layers. We further investigated the effect of adjusting the interfacial defect densities at the CdTe/Rb₂SnI₆ and Rb₂SnI₆/WS₂ interfaces to optimize the device’s capabilities further. Additionally, we examined the proposed PSC’s quantum efficiency (QE), current density–voltage (J-V), shunt resistance, series resistance, capacitance–voltage, working temperature, and generation-recombination parameters. The results of these simulations provide valuable information for the excellent scientific fabrication of an inorganic PSC that is based on Rb₂SnI₆.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143110039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}