Journal of Computational Electronics最新文献

{"title":"Design and analysis of a differential capacitive MEMS accelerometer with low lateral crosstalk based on area-enveloped electrodes","authors":"Peng Yang,&nbsp;Shanzhi Li,&nbsp;Xiaopeng Chen,&nbsp;Sijia Ling,&nbsp;Yiwen Tan,&nbsp;Chenji Yu,&nbsp;Jiawen Yin,&nbsp;Qinghui Jin","doi":"10.1007/s10825-026-02642-0","DOIUrl":"10.1007/s10825-026-02642-0","url":null,"abstract":"<div><p>Cross-axis interference is a key factor limiting the axial selectivity of differential capacitive MEMS accelerometers. In conventional variable-gap <i>z</i>-axis accelerometers, lateral proof-mass displacement changes the electrode-overlap area and introduces parasitic differential capacitance even when mechanical cross-axis motion is small. To suppress this effect, an area-enveloped fixed-electrode structure is proposed, in which the fixed electrode extends beyond the movable electrode in the <i>x</i>/<i>y</i> plane to maintain effective overlap during lateral translation. An analytical capacitance model and three-dimensional finite-element simulations are used to evaluate the sensing mechanism and device performance. Within the nominal 0–4 g range, increasing the one-side envelopment margin from 0 to 100 μm reduces the maximum normalized capacitance variation under <i>x</i>-axis acceleration from 1.2874 to 0.0135%, while the <i>z</i>-axis differential sensitivity remains approximately 2.02 pF/g, with a variation of only 0.159%. After subtraction of the 0-g offset, the simulated capacitive-stage crosstalk upper bounds are 0.0061% and 0.0052% for <i>x</i>- and <i>y</i>-axis inputs, respectively. The analytical and FEM <i>z</i>-axis sensitivities differ by approximately 0.988%. Fabrication-tolerance, thermal, modal, harmonic-response, and transient shock analyses further evaluate the robustness and dynamic behavior of the design, yielding a <i>z</i>-axis working mode near 857 Hz and a simulated 5% flat bandwidth of approximately 187–191 Hz. These results demonstrate the numerical feasibility of geometry-level suppression of lateral area-modulation crosstalk while preserving principal-axis sensitivity. The study provides a simulation-based structural design and numerical proof of concept for subsequent prototype fabrication and experimental validation.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149034959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"All-optical half-adder at 120 Gb/s based on optically pumped SOA-MZI","authors":"Amer Kotb,&nbsp;Kyriakos E. Zoiros","doi":"10.1007/s10825-026-02641-1","DOIUrl":"10.1007/s10825-026-02641-1","url":null,"abstract":"<div><p>The increasing demand for ultrafast and energy-efficient information processing in next-generation optical communication networks and photonic computing systems has intensified interest in all-optical logic devices capable of eliminating optical–electrical–optical conversion bottlenecks. Among the fundamental photonic building blocks, all-optical half-adders play a critical role in realizing arithmetic and digital signal processing functionalities entirely in the optical domain. In this work, a 120 Gb/s all-optical half-adder based on an optically pumped semiconductor optical amplifier-assisted Mach–Zehnder interferometer (OP-SOA-MZI) is numerically demonstrated for the first time. The proposed architecture employs XOR and AND logic gates to implement the SUM and CARRY functions, respectively. The operation principle relies on cross-phase modulation-induced differential phase shifting inside the interferometric structure. The performance of the proposed logic system is evaluated using the quality factor (QF), which provides a comprehensive assessment of signal integrity, noise tolerance, and logical discrimination capability. In addition to validating correct half-adder functionality at 120 Gb/s, the impact of major operational parameters on the QF is systematically investigated, including pump absorption coefficient, pump power, data rate, amplified spontaneous emission (ASE), and phase noise. The obtained results demonstrate that the optically pumped SOA configuration significantly improves logic performance by reducing carrier-induced nonlinear distortions and mitigating thermal limitations commonly associated with electrically pumped SOAs. At the optimal operating conditions, the SUM and CARRY outputs achieve QF values of 34 and 26, respectively, corresponding to bit error rates far below the standard error-free transmission criterion of 10⁻⁹. Furthermore, the interferometric MZI configuration enables ultrafast switching, high extinction ratio, compact implementation, and enhanced cascadability. The proposed OP-SOA-MZI half-adder exhibits stable and high-quality operation under various operating conditions, indicating its suitability for future ultrafast photonic integrated circuits, optical computing architectures, and high-capacity communication systems.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148986611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel normally-off stepped multi-channel AlGaN/AlN/GaN HEMT transistor with excellent DC characteristics","authors":"Amir khaleghparast Sereshkeh,&nbsp;Meysam Zareiee","doi":"10.1007/s10825-026-02628-y","DOIUrl":"10.1007/s10825-026-02628-y","url":null,"abstract":"<div><p>In power electronics applications, the development of multi-channel GaN HEMT transistors promises significant advances in the future electronics industry. This work presents a new multi-channel AlGaN/AlN/GaN High Electron Mobility Transistor (HEMT) with a stepped-channel structure, highlighting its potential performance and applications. Combining these channels creates a transistor whose performance is better than that of conventional counterparts. Apart from the creative arrangement of the channels, we have replaced the conventional SiN layer with a diamond layer on top of every gate. This deliberate improvement provides excellent thermal management in each channel. Separate channels help to distribute current well, therefore reducing the likelihood of hotspots in the channel and current degradation in individual channels. The transistor’s temperature rises to 561 K at a drain voltage of 15 V.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148986214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stochastic simulation of nonlinear electron transport in Ni/Al(_2)O(_3) metal–dielectric varistors","authors":"Karl Sabelfeld,&nbsp;Demid Abramkin,&nbsp;Anastasya Kireeva,&nbsp;Timur Zalyalov","doi":"10.1007/s10825-026-02639-9","DOIUrl":"10.1007/s10825-026-02639-9","url":null,"abstract":"<div><p>A stochastic computational framework for nonlinear electron transport in heterogeneous metal dielectric varistors is developed based on Monte Carlo simulation of explicit electron trajectories coupled with a self-consistent nonlinear potential equation. The methods derived are applied to compute current–voltage (<i>I</i>–<i>V</i>) characteristics of a Ni/Al<span>((_2))</span>O<span>((_3))</span> metal–dielectric varistor. The approach couples a nonlinear potential equation with Monte Carlo simulation of electron transport in a medium with strongly heterogeneous conductivity. Electron transport inside semiconductor grains is described by standard drift mechanisms, while transport across thin insulating intergranular layers is modeled via quantum tunneling. The resulting multiscale formulation accounts explicitly for the strong contrast between conductive grains and highly resistive grain boundary regions. Two modeling strategies are investigated. The first is a simplified homogeneous approximation, which assumes a uniform voltage drop across regularly structured grain layers. The second is a random grain-size model, in which the potential distribution is obtained by solving a nonlinear elliptic equation with field-dependent conductivity, coupled to a stochastic representation of the microstructure. The proposed models are validated against experimental <i>I</i>–<i>V</i> characteristics. The random grain-size model shows good agreement with experimental data, while the homogeneous approximation is accurate only for idealized periodic grain structures. The results demonstrate that coupling stochastic electron transport with nonlinear potential modeling provides an effective framework for describing varistor behavior in strongly disordered microstructures.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148986213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficient neural network modeling methodology of SiC MOSFET for accurate circuit simulation based on transfer learning","authors":"Borui Yang,&nbsp;Guicui Fu,&nbsp;Bo Wan","doi":"10.1007/s10825-026-02638-w","DOIUrl":"10.1007/s10825-026-02638-w","url":null,"abstract":"<div><p>Effective compact models of silicon carbide (SiC) MOSFETs are necessary for the development and optimization of emerging power electronic applications with SiC devices. In this paper, an efficient neural network modeling methodology of a SiC MOSFET is proposed for accurate behavioral modeling in circuit simulation. Instead of empirical formulas, artificial neural networks (ANNs) are used in this article to describe all the device characteristics, including the first- and third-quadrant output characteristics, three interterminal parasitic capacitance characteristics, and device temperature effects. Considering the common absence of measured data in partial operation regions, simulation data are employed to provide ANNs with behavior knowledge of SiC MOSFETs using a transfer learning method for better modeling performance. In addition, the device temperature effects are independently modeled for flexibility. For verification, the simulated and measured switching waveforms of double-pulse tests are compared to validate the accuracy of dynamic characteristics. Inverter simulation is also conducted to validate convergence. The results indicate that the proposed model demonstrates superior performance to comparative models in terms of accuracy. Furthermore, it exhibits satisfactory simulation speed, generalization ability, and convergence ability. Therefore, the proposed method facilitates efficient modeling of SiC MOSFETs and is feasible for accurate simulation of circuit applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148986464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing structural stability and optoelectronic performance in Ge(_2)(Sb(_{1-x})P(_x))(_2)Te(_5) phase-change materials via compositional tuning","authors":"Aleksey I. Kochaev,&nbsp;Renat T. Sibatov,&nbsp;Evgeny P. Kitsyuk","doi":"10.1007/s10825-026-02636-y","DOIUrl":"10.1007/s10825-026-02636-y","url":null,"abstract":"<div><p>Density functional theory (DFT) calculations were performed to study the properties of the phase-change material Ge<span>(_2)</span>(Sb<span>(_{1-x})</span>P<span>(_x)</span>)<span>(_2)</span>Te<span>(_5)</span> with partial substitution of antimony by phosphorus. At a phosphorus content of 25 %, one of two structural configurations becomes a thermodynamically stable semiconductor with a band gap of 0.68 eV and extremely high optical absorption 10<span>(^6)</span> cm<span>(^{-1})</span>. This composition exhibits optimal properties for energy-efficient phase-change memory and optoelectronic applications. The computational study also reveals a fundamental limitation: complete replacement of antimony by phosphorus does not yield stable phase-change materials in Ge<span>(_2)</span>P<span>(_2)</span>Te<span>(_5)</span>-type structures.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148986212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation-guided optimization of functionally graded HfO2/TiO2 memristive devices for neuromorphic computing","authors":"V. Rama Krishna,&nbsp;Mamata Choudhury,&nbsp;M. B. S. Sreekara Reddy,&nbsp;K. S. Raghuram,&nbsp;S. N. Padhi","doi":"10.1007/s10825-026-02637-x","DOIUrl":"10.1007/s10825-026-02637-x","url":null,"abstract":"<div><p>Hafnium oxide (HfO₂)-based memristive devices are promising candidates for neuromorphic computing, but the controlled design of graded oxygen-vacancy (V_O) profiles for improving ON/OFF ratio, analog conductance-state precision, endurance, and retention remains insufficiently explored. This study proposes an adaptive neuro-fuzzy inference system (ANFIS)–Bayesian Optimization (BO)–SHAP framework for functionally graded HfO₂/TiO₂ memristive thin-film optimization targeting neuromorphic computing applications. A dataset of 2,000 Silvaco ATLAS TCAD simulations is generated using Latin Hypercube Sampling across six design variables: HfO₂ thickness, TiO₂ thickness, V_O gradient steepness, TiN electrode thickness, annealing temperature, and V_O peak concentration. The ANFIS surrogate achieves R² &gt; 0.991 for simultaneous prediction of ON/OFF ratio, SET/RESET voltage variability, analog conductance states (N_states), endurance (N_cycles), and retention time (t_ret) within the simulated design space. Bayesian Optimization identified a Pareto-optimal functionally graded V_O profile within the investigated simulation space, predicted to exhibit ON/OFF ratio = 2.4 × 10⁶, N_states = 128 (7-bit precision), N_cycles = 1.2 × 10¹⁰, and t_ret = 12.8 years at 85 °C under the adopted TCAD-based simulation framework. SHAP analysis identifies V_O gradient steepness as the dominant parameter for both ON/OFF ratio (mean |SHAP|= 0.38) and conductance-state precision (0.44), through controlled partial conductive filament formation enabled by the graded V_O profile, while TiO₂ thickness governs endurance (0.42) by regulating oxygen reservoir capacity. Spike-timing-dependent plasticity (STDP) simulations indicate that the optimized FGM memristive device may support an asymmetric, near-linear 128-state weight update characteristic with nonlinearity factor NL = 0.08, yielding a simulated neuromorphic inference accuracy of 94.2% on the MNIST dataset under the adopted device and network assumptions. These results are simulation-based predictions, supported by calibration against representative published oxide-memristor data, and require future experimental fabrication and characterization for direct validation. The ANFIS–BO–SHAP workflow reduces optimization computational cost by 98.1% relative to full TCAD parametric sweeps and provides process-oriented guidance for ALD-based oxygen-vacancy grading in CMOS-compatible neuromorphic memory arrays.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148986216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of quasi-periodic and chaotic dynamics in a memristive MEMS: parameter-induced transitions and thermo-sensitive modulation","authors":"N. G. Koudafokê,&nbsp;Thierry Njougouo,&nbsp;Hilda A. Cerdeira,&nbsp;C. H. Miwadinou","doi":"10.1007/s10825-026-02626-0","DOIUrl":"10.1007/s10825-026-02626-0","url":null,"abstract":"<div><p>This work presents the mathematical modeling and numerical characterization of a Micro-Electro-Mechanical System (MEMS) integrating an HP memristor coupled to electrical and mechanical resonators. Based on the linear-drift HP memristor model, the nonlinear electromechanical dynamics are investigated through Lyapunov exponents, bifurcation diagrams, Poincaré sections, recurrence plots, phase portraits, and Fourier spectra. The numerical results demonstrate that the intrinsic memristor parameters, namely the low-resistance state <span>(R_{on})</span>, the high-resistance state <span>(R_{off})</span>, the oxide thickness <i>D</i>, and the ionic mobility <span>(mu _{v})</span>, directly control the amplitude, frequency content, and dynamical regime of the electromechanical oscillations, inducing transitions between quasi-periodic and chaotic behaviors. Temperature-dependent variations of these memristive parameters are shown to modulate both the oscillation amplitudes and the distribution of quasi-periodic and chaotic regimes, highlighting the thermo-sensitive character of the proposed architecture. A qualitative comparison with Josephson-junction-based MEMS is provided, emphasizing that the HP memristor exhibits similar nonlinear dynamical features while remaining fully operational at room temperature. These results suggest that memristive thermo-sensitive MEMS constitute a promising platform for adaptive nonlinear oscillators, thermo-sensitive sensing devices, and chaos-assisted electromechanical applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-026-02626-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148927720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring soliton structures of a conformable fractional-order transmission line metamaterial model for applications of wave propagation in power electronics","authors":"Marriam Anayat,&nbsp;Asghar Ali,&nbsp;Jamshad Ahmad","doi":"10.1007/s10825-026-02625-1","DOIUrl":"10.1007/s10825-026-02625-1","url":null,"abstract":"<div><p>This work presents a comprehensive investigation of a conformable fractional-order transmission line metamaterial (FTLM) model based on derivative parameter <span>(alpha)</span>, such that <span>(0 &lt; alpha le 1)</span>. These models mimic wave propagation in terms of circuit-based models with elements such as inductors and capacitors. Bifurcation analysis has been done to explore the dynamical behavior of the system through phase portraits across different parameter values. Further the <span>(Phi ^6)</span> methodology is applied to derive an advanced analytical solution for it. The FTLM model can achieve exact solutions for different wave structures based on this methodology. Extensive research has been performed to identify the stability and behavior of solutions as hyperbolic, trigonometric and rational waves through <span>(Phi ^6)</span> method, which are crucial for designing advanced waveguides and signal flow improvement in telecom systems. As metamaterials are of growing significance in applications like microwave engineering, signal processing and communications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148927093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and simulation of a piezoelectric diaphragm-based energy harvester for implantable applications","authors":"Sepehr Khalafzadeh,&nbsp;Farshad Pesaran,&nbsp;Nabiollah Shiri","doi":"10.1007/s10825-026-02634-0","DOIUrl":"10.1007/s10825-026-02634-0","url":null,"abstract":"<div><p>Implantable medical devices require reliable and sustainable power sources to ensure continuous long-term operation. Among various biomechanical sources, diaphragm motion is particularly attractive due to its continuous cyclic activity, relatively large displacement amplitude, and intrinsic physiological stability. In this study, a diaphragm-driven piezoelectric energy harvester incorporating a strain-amplifying Z-shaped mechanical structure is proposed. A hyperelastic biomechanical model of the human diaphragm is developed to accurately reproduce respiratory deformation under physiologically realistic loading conditions. A lead-free barium titanate (BaTiO₃) piezoelectric layer is employed because of its favorable electromechanical characteristics, chemical stability, and enhanced biocompatibility for implantable biomedical applications. The coupled electromechanical behavior of the proposed structure is evaluated under cyclic respiratory excitation within the normal human breathing frequency range. Simulation results demonstrate efficient mechanical strain transfer from the diaphragm to the piezoelectric layer, resulting in stable electrical energy generation during repetitive respiratory cycles. The proposed harvester achieves a peak-to-peak output voltage of approximately 7 V under normal physiological breathing conditions. Stress and displacement analyses further confirm the mechanical stability of the device and its safe operation within physiological deformation limits. The proposed design offers significant potential for extending implant lifetime, reducing the frequency of battery replacement surgeries, and enabling the development of self-powered implantable biomedical systems.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}