Dielectric engineered charge plasma assisted JFTFET SARS-CoV-2 sensor for rapid assessment of respiratory disorder: proposal and investigation

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Sukanya Ghosh
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引用次数: 0

Abstract

Dielectric engineered (DE) field-effect transistors (FETs) have become quite popular for label-free detection of biomolecules. Nevertheless, the intrinsic short-channel effects restrict their scalability, sensitivity, and energy optimization. Consequently, to achieve the full capability of the DEFET-based biosensors, an effort to quickly identify biomarkers for the SARS-CoV-2 virus is being commenced for the first time. This utilizes a highly expandable, exceptionally sensitive, and energy-saving DE charge plasma assisted junction free tunnel FET (DE-CPA-JFTFET). The proposed architecture enables the incorporation of a nanogap cavity at the source end within the gate oxide via targeted etching, offering stability to the immobilized biomolecules. Affordable diagnostic techniques are essential to curb the transmission of infectious illnesses, including COVID-19. Utilizing the envelope, spike, and DNA proteins of the virus, a comprehensive examination of the sensitivity of the proposed sensor has been conducted by measuring the change in drain current and threshold voltage using calibrated TCAD simulations. Presence of the composite biomolecules in the nanogaps are characterized by the effective dielectric constant (k = 4, 10, 12) of the virus proteins including the DNA charge density variation ranging from \(- \,2 \times 10^{12}\) to \(+ \,2 \times 10^{12} \,{\text{C}}/{\text{cm}}^{2}\). Present findings suggest that the proposed DE-CPA-JFTFET demonstrates an exceptionally high threshold voltage sensitivity (SVTH) of 31.50, ON-state current sensitivity (SION) of \(\sim \,459.76\), a high ION/IOFF exceeding seven orders of magnitude, sub-threshold swing (SS) of \(\sim \,10\,{\text{mV}}/{\text{dec}}\), making it a potential alternative to traditional FET-based biosensors. Moreover, the proposed DE-CPA-JFTFET sensor has also been analyzed by investigating the transient behavior of the drain current.

用于呼吸系统疾病快速评估的介质工程电荷等离子体辅助 JFTFET SARS-CoV-2 传感器:建议与研究
介电工程场效应晶体管(fet)在生物分子的无标记检测中已经非常流行。然而,固有的短通道效应限制了它们的可扩展性、灵敏度和能量优化。因此,为了充分发挥基于fet的生物传感器的功能,首次开始了快速识别SARS-CoV-2病毒生物标志物的工作。它利用了一种高度可扩展、异常敏感和节能的DE电荷等离子体辅助无结隧道场效应管(DE- cpa - jftfet)。所提出的结构可以通过靶向蚀刻在栅极氧化物的源端加入纳米隙腔,从而为固定化生物分子提供稳定性。负担得起的诊断技术对于遏制包括COVID-19在内的传染病的传播至关重要。利用病毒的包膜、刺突和DNA蛋白,通过使用校准的TCAD模拟测量漏极电流和阈值电压的变化,对所提出的传感器的灵敏度进行了全面检查。复合生物分子在纳米间隙中的存在通过病毒蛋白的有效介电常数(k = 4,10,12)来表征,包括DNA电荷密度变化范围从\(- \,2 \times 10^{12}\)到\(+ \,2 \times 10^{12} \,{\text{C}}/{\text{cm}}^{2}\)。目前的研究结果表明,所提出的de - pa - jftfet具有异常高的阈值电压灵敏度(SVTH)为31.50,导通状态电流灵敏度(SION)为\(\sim \,459.76\),高离子/IOFF超过7个数量级,亚阈值摆幅(SS)为\(\sim \,10\,{\text{mV}}/{\text{dec}}\),使其成为传统的基于fet的生物传感器的潜在替代品。此外,还通过研究漏极电流的瞬态行为对所提出的DE-CPA-JFTFET传感器进行了分析。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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