Journal of Computational Electronics最新文献_第10页

The energy-loss tensor in the bilayer and monolayer graphene: the role of many-body effects 双层和单层石墨烯的能量损失张量：多体效应的作用

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-26 DOI: 10.1007/s10825-024-02182-5

E. Rostampour

引用次数: 0

Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium 供体诱导的带电缺陷水平：研究锗中铟和 n 型缺陷复合物的作用

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-18 DOI: 10.1007/s10825-024-02179-0

Emmanuel Igumbor

{"title":"Donor-induced electrically charged defect levels: examining the role of indium and n-type defect-complexes in germanium","authors":"Emmanuel Igumbor","doi":"10.1007/s10825-024-02179-0","DOIUrl":"10.1007/s10825-024-02179-0","url":null,"abstract":"<div><p>Defect levels induced by defect-complexes in Ge play important roles in device fabrication, characterization, and processing. However, only a few defect levels induced by defect-complexes have been studied, hence limiting the knowledge of how to control the activities of numerous unknown defect-complexes in Ge. In this study, hybrid density functional theory calculations of defect-complexes involving oversize atom (indium) and <i>n</i>-type impurity atoms in Ge were performed. The formation energies, defect-complex stability, and electrical characteristics of induced defect levels in Ge were predicted. Under equilibrium conditions, the formation energy of the defect-complexes was predicted to be within the range of 5.90–11.38 eV. The defect-complexes formed by P and In atoms are the most stable defects with binding energy in the range of 3.31-3.33 eV. Defect levels acting as donors were induced in the band gap of the host Ge. Additionally, while shallow defect levels close to the conduction band were strongly induced by the interactions of Sb, P, and As interstitials with dopant (In), the double donors resulting from the interactions between P, As, N, and the host atoms including In atom are deep, leading to recombination centers. The results of this study could be applicable in device characterization, where the interaction of In atom and <i>n</i>-type impurities in Ge is essential. This report is important as it provides a theoretical understanding of the formation and control of donor-related defect-complexes in Ge.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 4","pages":"697 - 706"},"PeriodicalIF":2.2,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-024-02179-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141500588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tuning sensitivity of bimetallic, MXene and graphene-based SPR biosensors for rapid malaria detection: a numerical approach 调谐双金属、MXene 和石墨烯基 SPR 生物传感器的灵敏度以快速检测疟疾：一种数值方法

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-17 DOI: 10.1007/s10825-024-02191-4

Bhishma Karki, Arun Uniyal, Manoj Sharma, Ram Bharos Yadav, Parusharamulu Buduma

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Addressing multi-molecule field-coupled nanocomputing for neural networks with SCERPA 利用 SCERPA 解决神经网络的多分子场耦合纳米计算问题

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-12 DOI: 10.1007/s10825-024-02189-y

Federico Ravera, Giuliana Beretta, Yuri Ardesi, Mariagrazia Graziano, Gianluca Piccinini

{"title":"Addressing multi-molecule field-coupled nanocomputing for neural networks with SCERPA","authors":"Federico Ravera, Giuliana Beretta, Yuri Ardesi, Mariagrazia Graziano, Gianluca Piccinini","doi":"10.1007/s10825-024-02189-y","DOIUrl":"10.1007/s10825-024-02189-y","url":null,"abstract":"<div><p>The molecular field-coupled nanocompunting (molFCN) technology encodes the information in the charge distribution of electrostatically coupled molecules, making it an exciting solution for future beyond-CMOS low-power electronics. Recent literature has shown that multi-molecule molFCN enables the design of devices with tailored unconventional characteristics, such as majority voters working as artificial neurons. This work presents a multi-molecule molFCN neuron model based on the weighted-inputs formulation to estimate molFCN neurons behavior. Then, the introduced model is used to design each neuron of molFCN circuits working as neural networks. In particular, we propose a molFCN neural network operating as an input pattern classifier. The results show the model aptitude in predicting the logic output values for individual neurons and, consequently, entire networks. The model accuracy has been evaluated by comparing the results from the neuron mathematical model with those obtained from the circuit-level simulations conducted with the SCERPA tool. Overall, this study highlights the strategic use of diverse molecules in molFCN layouts, customizing circuit operations, and expanding design possibilities for specific molFCN device functioning.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 4","pages":"910 - 919"},"PeriodicalIF":2.2,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-024-02189-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141351677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Mathematical modeling of solar cells: novel approaches based on Special Trans Function Theory 太阳能电池数学建模：基于特殊反函数理论的新方法

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-12 DOI: 10.1007/s10825-024-02190-5

Martin Ćalasan

{"title":"Mathematical modeling of solar cells: novel approaches based on Special Trans Function Theory","authors":"Martin Ćalasan","doi":"10.1007/s10825-024-02190-5","DOIUrl":"10.1007/s10825-024-02190-5","url":null,"abstract":"<div><p>In a mathematical sense, regardless of the equivalent circuit, solar cells are represented by nonlinear dependencies of current and voltage. First, this paper discusses novel mathematical formulations of the current–voltage dependencies of solar cells for single-diode, double-diode, and triple-diode models (SDM, DDM, and TDM, respectively). Second, for SDM, although the analytical solution expressed through Special Trans Function Theory (STFT) was known in the literature, in this paper, its applicability was checked for the first time, and a comparison was made with a literature approach. Third, for both DDM and TDM, novel original iterative procedures for current–voltage dependencies based on the application of the STFT have been proposed. Fourth, the accuracy and efficiency of all the proposed solutions were confirmed by observing two different, well-known solar cells. Furthermore, the applicability of the proposed solutions was confirmed by experimentally measuring the current‒voltage characteristics of solar cells under different climatic conditions. The proposed modeling approaches undoubtedly represent a new field for the application of STFTs.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1137 - 1147"},"PeriodicalIF":2.2,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141351635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A feasibility study of microwave UAV imaging based on multi-station polarimetric radars 基于多站偏振雷达的无人飞行器微波成像可行性研究

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-12 DOI: 10.1007/s10825-024-02185-2

Haolin Zhang, Jiaxin Xie, Yabo Liu, Xin Zhao, Zhongjun Yu, Zicheng Wang, Shichao Chen

引用次数: 0

Unveiling the diverse applications and problem-solving capabilities of the MOM-GEC hybrid approach: a comprehensive systematic review 揭示 MOM-GEC 混合方法的各种应用和解决问题的能力：全面系统审查

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-12 DOI: 10.1007/s10825-024-02169-2

Mariem Abdi, Taoufik Aguili

{"title":"Unveiling the diverse applications and problem-solving capabilities of the MOM-GEC hybrid approach: a comprehensive systematic review","authors":"Mariem Abdi, Taoufik Aguili","doi":"10.1007/s10825-024-02169-2","DOIUrl":"10.1007/s10825-024-02169-2","url":null,"abstract":"<div><p>Hybrid numerical methods show great potential in enhancing conventional approaches, particularly when dealing with complex structures beyond the capabilities of individual methods or standard software. This paper provides a comprehensive overview of the Method of Moments combined with the Generalized Equivalent Circuit (MOM-GEC) in electromagnetic modeling. Through comparative analysis with traditional numerical methods such as the Method of Moments, Finite Difference Time Domain (FDTD), and Finite Element Method (FEM), MOM-GEC’s unique advantages in adaptability, accuracy, and computational efficiency are highlighted. Mathematical formulations based on equations are integrated to clarify the method’s concepts and integration processes. The study showcases MOM-GEC’s successful deployment in various applications, demonstrating its versatility and efficacy in intricate scenarios such as antenna arrays, graphene-based metamaterial devices, and dosimetry in partially enclosed environments. Each case study undergoes re-evaluation by incorporating the generalized equivalent circuit approach, emphasizing MOM-GEC’s effectiveness in addressing diverse challenges. This underscores MOM-GEC’s versatility and efficacy across complex scenarios, reaffirming its value in electromagnetic modeling.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 4","pages":"791 - 818"},"PeriodicalIF":2.2,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141355083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Potential of TiO2 as a capping layer for industrial c-Si PERC solar cells 二氧化钛作为工业化晶体硅 PERC 太阳能电池封盖层的潜力

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-12 DOI: 10.1007/s10825-024-02187-0

Aamenah Siddiqui, Muhammad Usman, Anders Hallén

{"title":"Potential of TiO2 as a capping layer for industrial c-Si PERC solar cells","authors":"Aamenah Siddiqui, Muhammad Usman, Anders Hallén","doi":"10.1007/s10825-024-02187-0","DOIUrl":"10.1007/s10825-024-02187-0","url":null,"abstract":"<div><p>Titanium dioxide (TiO<sub>2</sub>) has gained popularity especially in photovoltaic applications, owing to its transparency in the visible region, and scratch resistance. In this work, the potential of TiO<sub>2</sub> as a capping layer for c-Si p-type SiN<sub><i>x</i></sub> passivated emitter and rear contact (PERC) solar cells is studied through extensive optical and device simulations. The bifacial PERC solar cell model used in this study is calibrated with an experimental device having an efficiency of 22.19%. Device simulation results show that TiO<sub>2</sub> deposited by the mesoporous technique outperforms atmospheric pressure chemical vapor deposition (APCVD) and atomic layer deposition (ALD)-based TiO<sub>2</sub> layers when capped over SiN<sub><i>x</i></sub> (<i>n</i> = 2.1) passivated solar cells. Furthermore, it is shown that the efficiency of SiN<sub><i>x</i></sub> (<i>n</i> = 2.1)/TiO<sub>2</sub> based solar cells is maintained, even when the TiO<sub>2</sub> layer thickness varies from 75 to 95 nm. To enhance the efficiency further, the type of SiN<sub><i>x</i></sub> layer (characterized by the <i>n</i> value), and the thicknesses of SiN<sub><i>x</i></sub> and TiO<sub>2</sub> layers are optimized simultaneously to find the best combination of these parameters. The best front side solar cell efficiency of 22.43%, is obtained when a stack of SiN<sub><i>x</i></sub>(<i>n</i> = 1.99)/TiO<sub>2</sub> (<i>t</i> = 58/76 nm) is used. Similarly, a rear side efficiency of 16.59% is achieved when the rear side Al<sub>2</sub>O<sub>3</sub>/SiN<sub><i>x</i></sub> stack is capped with mesoporous TiO<sub>2</sub>. These efficiencies are 0.24 and 1.25% higher, respectively, when compared to the original SiN<sub><i>x</i></sub> passivated PERC solar cell, demonstrating the prospective of using TiO<sub>2</sub> in encapsulant-free commercial photovoltaic applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 4","pages":"874 - 883"},"PeriodicalIF":2.2,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141351530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A review of structural and electronic properties of graphyne-based nanotubes 石墨基纳米管的结构和电子特性综述

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-11 DOI: 10.1007/s10825-024-02181-6

Roya Majidi

引用次数: 0

Advancing microwave ablation applicators: integrating computational modeling of a graphene-based applicator with machine learning for ablation zone prediction 推进微波消融涂抹器：将基于石墨烯的涂抹器计算建模与机器学习相结合，进行消融区预测

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-06 DOI: 10.1007/s10825-024-02186-1

Suyash Kumar Singh, Amar Nath Yadav

{"title":"Advancing microwave ablation applicators: integrating computational modeling of a graphene-based applicator with machine learning for ablation zone prediction","authors":"Suyash Kumar Singh, Amar Nath Yadav","doi":"10.1007/s10825-024-02186-1","DOIUrl":"10.1007/s10825-024-02186-1","url":null,"abstract":"<div><p>This research focuses on the design and optimization of a graphene-based microwave ablation applicator (MWA) for tumor treatment. The unique properties of graphene, such as high impedance at microwave frequency and tunable Fermi energy, make it an ideal candidate for inducing charge carriers through an electric field or chemical doping. The study further employs machine learning techniques, including support vector regression (SVR) and artificial neural networks (ANN) to predict the ablation zone. The applicator design incorporates a helix antenna element connected to a coaxial cable working at 2.45 GHz with a graphene sheet and T-ring attached to the outer conductor. The challenge of achieving a zero-Fermi energy is addressed by introducing defects to increase surface resistivity, resulting in an impedance close to the required value. The results show that the graphene-based applicator enhances the ablation zone, leading to efficient and controlled tumor treatment<b>.</b> To predict the ablation zone accurately, the study employs machine learning techniques, including SVR and ANN utilizing Taguchi method to reduce computational complexity. Large and round ablation zone is achieved using novel applicator. Further, the performance metrics, including root-mean-squared error and coefficient of determination (<i>R</i><sup>2</sup>), are utilized to evaluate the predictive capabilities of the model and found to be optimum. The research demonstrates the potential of graphene in improving MWA treatment and highlights the importance of machine learning in optimizing MWA and predicting treatment outcomes.</p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 4","pages":"832 - 850"},"PeriodicalIF":2.2,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-024-02186-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141379417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0