Journal of Computational Electronics最新文献_第10页

Comparative modal analysis in micro–nano-optical fiber tapers using spectral parameter power series method and exact modes method 采用谱参数幂级数法和精确模态法对微纳光纤锥度进行模态比较分析

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-01-13 DOI: 10.1007/s10825-023-02006-y

R. Castillo-Perez, J. R. Ek-Ek, C. E. Jacome-Peñaherrera, D. Jauregui-Vazquez, R. Sanchez-Lara, H. L. Offerhaus, J. A. Alvarez-Chavez

{"title":"Comparative modal analysis in micro–nano-optical fiber tapers using spectral parameter power series method and exact modes method","authors":"R. Castillo-Perez, J. R. Ek-Ek, C. E. Jacome-Peñaherrera, D. Jauregui-Vazquez, R. Sanchez-Lara, H. L. Offerhaus, J. A. Alvarez-Chavez","doi":"10.1007/s10825-023-02006-y","DOIUrl":"10.1007/s10825-023-02006-y","url":null,"abstract":"<div><p>This work presents a comparative theoretical analysis of spatial modal evolution in micro/nano-optical fiber (MNF) tapers. The study proposes the use of the Spectral Parameter Power Series (SPPS) Method and compares its performance with results from the so-called Exact Modes Method (EMM) and the Finite Element Method (FEM) (the method employed by the COMSOL© software in which the computations were implemented). By using these techniques, the modal analysis and intensity evolution are discussed along different sections of the optical fiber taper. Furthermore, the data are compared considering experimental values from a real micro/nano-optical fiber taper sample. The SPPS method offers a competitive accuracy and versatility to deal with graded index profiles, its computational costs are low, and its implementation is relatively easy. The results from the SPPS method fit to those of the EM method, which sometimes involves intricated models, and those of the FEM, which may require more computational time. The SPPS method offers an average relative error of less than 5% with respect to the exact method with less computational cost compared to the FEM method for radii bigger than 2 μm at 1550 nm.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 2","pages":"690 - 697"},"PeriodicalIF":2.1,"publicationDate":"2023-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-023-02006-y.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4535674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correction: Outstanding tunable electrical and optical characteristics in monolayer silicene at high terahertz frequencies 校正:在高太赫兹频率下，单层硅烯具有杰出的可调谐电学和光学特性

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-01-12 DOI: 10.1007/s10825-022-02003-7

Hamed Emami‑Nejad, Ali Mir, Ali Farmani, Reza Talebzadeh

引用次数: 0

Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures MgxZn1−xO/ZnO异质结构的速度场特性

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-01-12 DOI: 10.1007/s10825-022-01999-2

DongFeng Liu

引用次数: 1

A generic simple model of synaptic memristor with local activity for neuromorphic applications 神经形态学应用中具有局部活性的突触忆阻器的一般简单模型

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-01-12 DOI: 10.1007/s10825-023-02007-x

Pratyusha Nune, Santanu Mandal, Amit Saha, Rajesh Saha

{"title":"A generic simple model of synaptic memristor with local activity for neuromorphic applications","authors":"Pratyusha Nune, Santanu Mandal, Amit Saha, Rajesh Saha","doi":"10.1007/s10825-023-02007-x","DOIUrl":"10.1007/s10825-023-02007-x","url":null,"abstract":"<div><p>A non-volatile locally active memristor is a promising candidate for neuromorphic computing based on artificial synapses and neurons, due to its high-speed switching, strong scalability, high computing, and low power consumption. In this paper, a novel generic model of voltage-controlled memristor with local activity and synaptic behavior is proposed. The circuit design of this memristor is very simple and easy to fabricate. Using small-signal analysis, the behavior of local activity is analyzed for this memristor model. Through the theoretical study, three significant parameters are identified to derive an equivalent circuit (small-signal), which is important for the study on dynamics of this memristor. To check the feasibility of the proposed model, a hardware-based implementation is performed through breadboard analysis. Important fingerprints of this memristor are verified both in theoretically and experimentally. The hardware-based results confirm the non-volatile characteristic and synaptic behavior of this memristor. Several experimental results exhibit a tunable modulation of synaptic weights with pulses, which effectively mimic different bio-synaptic characteristics like potentiation, depression, STDP (Spike-Time-Dependent Plasticity), STP (Short-Term-Plasticity), LTP (Long-Term-Plasticity), learning, forgetting, PPF (Paired-Pulse Facility), and PTP (Post-Tetanic Potentiation).</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 2","pages":"612 - 625"},"PeriodicalIF":2.1,"publicationDate":"2023-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4496041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Storm surge level prediction based on improved NARX neural network 基于改进NARX神经网络的风暴潮水位预测

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-01-12 DOI: 10.1007/s10825-023-02005-z

Lianbo Li, Wenhao Wu, Wenjun Zhang, Zhenyu Zhu, Zhengqian Li, Yihan Wang, Sen Niu

{"title":"Storm surge level prediction based on improved NARX neural network","authors":"Lianbo Li, Wenhao Wu, Wenjun Zhang, Zhenyu Zhu, Zhengqian Li, Yihan Wang, Sen Niu","doi":"10.1007/s10825-023-02005-z","DOIUrl":"10.1007/s10825-023-02005-z","url":null,"abstract":"<div><p>The northern Gulf of Mexico coast is affected by the North Atlantic hurricane season, which causes storm surge disasters every year and brings serious economic losses to the southern USA; therefore, it is necessary to make an accurate advance prediction of storm surge level. In this paper, a model with simple structure, fast computation speed, and accurate prediction results has been constructed based on nonlinear auto-regressive exogenous (NARX) neural network. Five types of data collected from observation stations are selected as the input factors of the model. To improve the model's computational efficiency, a neuron pruning strategy based on sensitivity analysis is introduced. By analyzing the output weights of the neurons in the hidden layer on the sensitivity of the model prediction output, the model structure can be adjusted accordingly. Moreover, a modular prediction method is introduced based on the tide harmonic analysis data so as to make the model prediction results more accurate. At last, a complete storm surge level prediction model, pruned modular (PM)-NARX, is constructed. In this paper, the model is trained by using historical data and used for storm surge level prediction along the northern Gulf of Mexico coast in 2020. The simulation test results show that the correlation between the predicted data and the observed data is stable above 0.99 at 12 h in advance and the model is able to produce the results within one minute. The prediction speed, accuracy, and stability are higher than those of conventional models. In addition, two sets of follow-up tests show that the prediction accuracy of the model can still maintain a high level. The above can prove that the pruned modular (PM)-NARX model can effectively provide early warning before the storm surge to avoid property damage and human casualties.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 2","pages":"783 - 804"},"PeriodicalIF":2.1,"publicationDate":"2023-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4496994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Reflective-to-absorptive THz switchable bifunctionality through phase transition of vanadium dioxide in a 1D defective photonic crystal microcavity 一维缺陷光子晶体微腔中二氧化钒相变的反射-吸收太赫兹可切换双功能

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-01-10 DOI: 10.1007/s10825-023-02010-2

Arezou Rashidi

{"title":"Reflective-to-absorptive THz switchable bifunctionality through phase transition of vanadium dioxide in a 1D defective photonic crystal microcavity","authors":"Arezou Rashidi","doi":"10.1007/s10825-023-02010-2","DOIUrl":"10.1007/s10825-023-02010-2","url":null,"abstract":"<div><p>The terahertz (THz) absorption features are theoretically investigated in a symmetric one-dimensional photonic crystal hybridized with a vanadium dioxide (VO<sub>2</sub>) phase change material (PCM). VO<sub>2</sub> is one of the most prominent PCMs whose conductivity increases three orders of magnitude during its phase transition from a semiconducting monoclinic to a metallic tetragonal structure. Here, we utilize this property of VO<sub>2</sub> to engineer a tunable THz optical device. Our results show that when the VO<sub>2</sub> is in the semiconductor state with low conductivity of 200 S/m, the structure is nearly reflective. However, increasing the VO<sub>2</sub> conductivity continuously to the value of 1.5 × 10<sup>5</sup> S/m increases its metallic level further leading to the perfect absorption of the structure. Further increasing the VO<sub>2</sub> conductivity to the value of 2 × 10<sup>5</sup> S/m reconfigures it to the fully metallic state so that the absorption peak value remains unit as well. In other words, there is a unit contrast in the absorption levels between two semiconductor and metallic states of VO<sub>2</sub> for the proposed structure, which makes it promising for designing tunable nearly reflective and absorbent bifunctionality and optical switching THz devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 2","pages":"698 - 703"},"PeriodicalIF":2.1,"publicationDate":"2023-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4726505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optoelectronic properties of monolayer and bilayer AgI: role of many-body interactions 单层和双层AgI的光电性质:多体相互作用的作用

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-01-04 DOI: 10.1007/s10825-022-01984-9

Mehdi Shakourian, Hosein Alavi-Rad

{"title":"Optoelectronic properties of monolayer and bilayer AgI: role of many-body interactions","authors":"Mehdi Shakourian, Hosein Alavi-Rad","doi":"10.1007/s10825-022-01984-9","DOIUrl":"10.1007/s10825-022-01984-9","url":null,"abstract":"<div><p>In an outstanding experimental advance in the field of two-dimensional materials, monolayer AgI was synthesized using a graphene encapsulation approach (Mustonen et al. in Adv Mater 34(9):2106922, 2022). Herein, inspired by this experimental achievement, the intrinsic electronic and optical properties of monolayer and bilayer AgI are investigated using the density functional theory and many-body perturbation theory. For the bilayer, two different stackings are considered namely AA and AB. The results indicate that monolayer and bilayer AgI are direct band gap semiconductors. The G<sub>0</sub>W<sub>0</sub> band gap is predicted to be 3.66, 1.45, and 1.58 eV for monolayer, bilayer AA, and bilayer AB, respectively. The optical spectra achieved from solving the Bethe–Salpeter equation show the first bright exciton to be located at 2.78, 0.65, and 0.75 eV for monolayer, bilayer AA, and bilayer AB, respectively. The obtained optical gaps for the bilayers are found to be much smaller than that of the monolayer, very suitable for optoelectronic applications in the visible light region. The exciton binding energy is calculated to be 0.88, 0.80, and 0.83 eV for monolayer, bilayer AA, and bilayer AB, respectively. Also, the average value of light absorption in the visible area is estimated to be 0.12, 1.16, and 1.09 × 10<sup>7</sup> m<sup>−1</sup> for monolayer, bilayer AA, and bilayer AB, respectively. The effects of many-body interactions on the optical responses of the structures are evaluated. Overall, it is found that the optoelectronic performance of AgI is improved from monolayer to bilayer. This study provides a fantastic vision concerning the intrinsic physical properties of monolayer and bilayer AgI and highlights their characteristics for optoelectronics applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 1","pages":"96 - 105"},"PeriodicalIF":2.1,"publicationDate":"2023-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4162025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Comparative of analog performance of transcapacitances in asymmetric self-cascode and graded-channel SOI nMOSFETs 非对称自级联码与梯度通道SOI nmosfet跨电容模拟性能比较

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2023-01-04 DOI: 10.1007/s10825-022-01998-3

Camila Restani Alves, Michelly de Souza

引用次数: 0

Design and analysis of 3 × 3 reversible quantum gates 3 × 3可逆量子门的设计与分析

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2022-12-27 DOI: 10.1007/s10825-022-01980-z

Hilal A. Bhat, Farooq A. Khanday, Brajesh K. Kaushik, Khurshed A. Shah

引用次数: 2

Analytical modeling of a dual-material graded-channel cylindrical gate-all-around FET to minimize the short-channel effects 以最小化短通道效应为目的的双材料梯度沟道圆柱形栅极全能场效应管的解析建模

IF 2.1 4区工程技术

Journal of Computational Electronics Pub Date : 2022-12-20 DOI: 10.1007/s10825-022-01992-9

Praveen Kumar Mudidhe, Bheema Rao Nistala

{"title":"Analytical modeling of a dual-material graded-channel cylindrical gate-all-around FET to minimize the short-channel effects","authors":"Praveen Kumar Mudidhe, Bheema Rao Nistala","doi":"10.1007/s10825-022-01992-9","DOIUrl":"10.1007/s10825-022-01992-9","url":null,"abstract":"<div><p>In this paper, an analytical model for center potential and threshold voltage is developed for a dual-material graded-channel cylindrical gate-all-around (DMGC CGAA) FET by integrating gate engineering and channel engineering. The potential distribution of the device is determined by solving the two-dimensional (2-D) Poisson equation in cylindrical coordinates with suitable boundary conditions by applying the parabolic approximation method. The threshold voltage (<i>V</i><sub>th</sub>) is calculated from the minimum center potential in the channel. The center potentials of single-material graded-channel cylindrical gate-all-around (SMGC CGAA) field effect transistors (FETs) and DMGC CGAA FETs are compared, and the optimum values are determined by varying the different device parameters of the DMGC CGAA FETs. The short-channel effects (SCEs) including threshold voltage (<i>V</i><sub>th</sub>) roll-off, hot carrier effect (HCE) and drain-induced barrier lowering (DIBL) are examined. The effects of oxide thickness (<i>t</i><sub>ox</sub>) and cylinder diameter (<i>t</i><sub>si</sub>) on the <i>V</i><sub>th</sub> are also investigated. The proposed model results are in agreement with the simulation results using technology computer-aided design (TCAD).</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"22 1","pages":"199 - 208"},"PeriodicalIF":2.1,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-022-01992-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4782145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1