Journal of Computational Electronics最新文献

{"title":"Chaotic computing cell based on nanostructured phase-change materials","authors":"A. A. Nevzorov,&nbsp;A. A. Burtsev,&nbsp;A. V. Kiselev,&nbsp;V. A. Mikhalevsky,&nbsp;V. V. Ionin,&nbsp;N. N. Eliseev,&nbsp;A. A. Lotin","doi":"10.1007/s10825-024-02221-1","DOIUrl":"10.1007/s10825-024-02221-1","url":null,"abstract":"<div><p>This paper presents and investigates a new architecture of a computational cell based on nanoparticles of the phase-change material Ge₂Sb₂Te₅. Such a cell is a chaotic array of nanoparticles deposited between closely spaced electrical contacts. The state of such a structure is determined by the resistance of the nanoparticle array, which depends on the phase state of each particle of the material. Simulation results show that the proposed structure has a number of electrical states switching features that cannot be achieved using a thin film architecture. The proposed architecture allows for smoother and more controlled switching of the resistance by electrical pulses. Simulation of the evolution of the cell state using complex control actions showed that the proposed structure can behave as an artificial convolutional neuron with horizontal connections and also as a multi-level memory cell. In addition, the proposed design is technologically simple to achieve and inexpensive to manufacture.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1448 - 1454"},"PeriodicalIF":2.2,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature","authors":"P. J. Baymatov,&nbsp;B. T. Abdulazizov,&nbsp;O. M. Yunusov,&nbsp;Kh. N. Juraev,&nbsp;A. A. Saydaliev","doi":"10.1007/s10825-024-02231-z","DOIUrl":"10.1007/s10825-024-02231-z","url":null,"abstract":"<div><p>The numerical and analytical results of a study on the paramagnetism of a two-dimensional electron gas depending on concentration and temperature are presented. The dependence of spin susceptibility on the width of the quantum well, temperature, concentration, and chemical potential at the resonance points and away from it was analyzed. The susceptibility was analyzed in the model of an ideal gas with a parabolic spectrum and a quantum well of infinite depth. The numerical results of the susceptibility calculation will be presented in graphs for different temperatures, quantum well widths, and concentrations.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1292 - 1297"},"PeriodicalIF":2.2,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulations of RF wave-induced modulation of filament growth and bipolar resistive switching in conductive bridging RAM","authors":"Yifei Yin,&nbsp;Toshihiro Nakaoka","doi":"10.1007/s10825-024-02228-8","DOIUrl":"10.1007/s10825-024-02228-8","url":null,"abstract":"<div><p>We have simulated Ag–Ge–Te-based conductive bridge RAM (CBRAM) under RF electromagnetic wave input to investigate the RF effects on heat transfer and electrochemical reaction. The RF simulations agreed with the experimental transmission coefficient S₂₁ between 0.4 and 1 GHz, indicating an effective, uniform electric field applied in the RF-applicable CBRAMs. The heat transfer simulations showed a minimal temperature increase of about 1 K under the RF wave at 10 MHz and 10 dBm, indicating negligible thermal effects. The electrochemical simulations were based on the Nernst–Planck equation, taking into account the Ag ion transport in the Ag–GeTe electrolyte by diffusion and migration. Electrode kinetics were calculated for charge transfer reactions using the Butler–Volmer equation. The cathode electrode moved at a velocity equal to the rate of Ag electrodeposition on the cathode. The electrode movement represented filament growth. The electrochemical simulations successfully reproduced filament growth, bipolar resistive switching, experimental currents, and SET/RESET voltages. In addition, the electrochemical simulations under RF waves showed a decrease in the magnitude of SET and RESET voltages, consistent with experimental observations. The RF-induced SET/RESET voltage modulation was attributed to redox reactions that changed the average ion concentration during RF cycles, accelerating filament growth and dissolution.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1380 - 1390"},"PeriodicalIF":2.2,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-024-02228-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A simulation study of electrostatically doped silicene and graphene nanoribbon FETs","authors":"Armin Gooran-Shoorakchaly,&nbsp;Sarah Safura Sharif,&nbsp;Yaser Mike Banad","doi":"10.1007/s10825-024-02224-y","DOIUrl":"10.1007/s10825-024-02224-y","url":null,"abstract":"<div><p>This paper evaluates the performance of electrostatic-doped silicene nanoribbon field-effect transistors (ED SiNR-FET) and graphene nanoribbon field-effect transistors (ED GNR-FET) through quantum-based electron transport simulations. It assesses the impact of ribbon widths and device geometry, revealing that ED SiNR-FET generally outperforms ED GNR-FET, particularly in terms of resistance to impurities and short-channel effects. The study identifies optimal ribbon widths for superior performance and introduces the extended channel ED (ECED) structure, which significantly enhances the <i>I</i>_ON/<i>I</i>_OFF ratio to 3.8 × 10⁵ in SiNR-FET compared to 3.9 × 10³ in GNR-FET for 15 nm devices. Additionally, analyses of ECED SiNR-FETs and ECED GNR-FET across various channel and gate lengths suggest that ECED devices are suitable for low-power and high-performance applications, with the ECED SiNR-FET displaying excellent subthreshold swing (SS) of 64 mV/dec and high transconductance (g_m) of 63 µS. This research confirms the advanced performance of SiNR-FETs over GNR-FETs and the potential of ECED SiNR-FETs in diverse applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1315 - 1324"},"PeriodicalIF":2.2,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On efficient modeling of drain current for designing high-power GaN HEMT-based circuits","authors":"Anwar Jarndal,&nbsp;Famin Rahman Rakib,&nbsp;Mohammad Abdul Alim","doi":"10.1007/s10825-024-02225-x","DOIUrl":"10.1007/s10825-024-02225-x","url":null,"abstract":"<div><p>In this paper, different modeling approaches to the drain current, including analytical and artificial neural network (ANN) modeling, are investigated. The adopted models address the inherent self-heating and kink effects, especially in high-power GaN-based high electron mobility transistors (HEMTs). Different optimization algorithms were demonstrated for extracting the model parameters, including genetic algorithm optimization (GAO), gray wolf optimization (GWO), growth optimization (GO), and particle swarm optimization (PSO). The modeling approaches are applied to DC IV measurements of 1-mm, 4-mm, and 2-mm GaN HEMTs on SiC and Si substrates. An improved optimization procedure was applied to the analytical models to find the main parameters responsible for fitting the general nonlinear behavior of the device. Then, the thermal or self-heating parameters are tuned for best fitting in the high-power dissipation region. The kink effect has been counted by adding another factor to the analytical formula to characterize the voltage dependency of this effect. The ANN modeling provides an efficient and cost-effective solution to accurately simulate the IV characteristics with less effort. In this technique, there is no need for a predefined closed formula or a complicated fitting parameter extraction process. Also, the model training was enhanced by using a genetic algorithm augmented backpropagation technique. The investigated analytical and ANN techniques were demonstrated by modeling the IV characteristics of the considered GaN HEMTs. The results obtained confirm the advantages of using ANN modeling for solving such problems and large-signal modeling applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1355 - 1367"},"PeriodicalIF":2.2,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic effect of total ionizing dose and single event gate rupture in MOSFET with Si3N4–SiO2 stacked gate","authors":"Rongxing Cao,&nbsp;Hanxun Liu,&nbsp;Kejia Wang,&nbsp;Dike Hu,&nbsp;Yiyuan Wang,&nbsp;Xianghua Zeng,&nbsp;Yuxiong Xue","doi":"10.1007/s10825-024-02227-9","DOIUrl":"10.1007/s10825-024-02227-9","url":null,"abstract":"<div><p>The synergistic effect of total ionizing dose on single event gate rupture (SEGR) was simulated in the vertical double diffusion metal oxide semiconductor device with SiO₂–Si₃N₄ stacked gate layer. In comparison to the device with a single SiO₂ gate layer, the synergistic effect was revealed to be suppressed in the device with SiO₂–Si₃N₄ stacked layer. The mechanism is that the oxide layer is a sensitive area of the SEGR effect. Compared with the single SiO₂ layer, the superposition of the additional electric field formed by the trapped holes in the sensitive area of the stacked layer leads to a decrease in the sensitivity of the synergistic effect, which is more obvious with increasing the volume of the Si₃N₄ layer.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1298 - 1305"},"PeriodicalIF":2.2,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Systematic analysis of lead-free halide K2SnX6 (X = Cl, Br, I) double perovskites for solar cell applications","authors":"Huma Habib,&nbsp;Mazhar Haleem,&nbsp;Muhammad Rashid,&nbsp;Awais Ali,&nbsp;Arshad Saleem Bhatti,&nbsp;Zulqurnain Ali,&nbsp;Mujtaba Hussain","doi":"10.1007/s10825-024-02222-0","DOIUrl":"10.1007/s10825-024-02222-0","url":null,"abstract":"<div><p>Perovskites possessing lead have gained immense consideration recently owing to their unique optoelectronic properties. Thus, they are considered highly suitable materials for solar power and harvesting applications. However, the instability of perovskites in air and moisture, along with the toxicity of lead, has limited their use in developing practical devices. In this work, detailed first-principles research was carried out to discover the basic structural, electronic, optical, and thermoelectric properties of cubic lead-free double perovskites K₂SnX₆ (X = Cl, Br, I). All structures exhibited good mechanical stability as they satisfied the Born criteria. The values of their Poisson’s (<i>v</i>) and Pugh’s ratios (<i>B</i>₀/<i>G</i>) exceeded the critical numbers of 0.26 and 1.75, respectively, revealing their ductile nature. The bandgap calculations for the structures were accomplished using the generalized gradient approximation (GGA), which revealed that these perovskites exhibited direct band gaps except K₂SnI₆, having metallic characteristics. The bandgaps were also calculated by adding the modified Becke–Johnson potential (TB-mBJ). Moreover, computed refractive indices for K₂SnBr₆ and K₂SnI₆ revealed excellent luminescent properties in the UV region. The figure of merit (ZT) for K₂SnCl₆ and K₂SnBr₆ approached 1, whereas its value was around 0.568 for K₂SnI₆ at room temperature. The conclusions of this study provide sufficient evidence that these perovskite structures K₂SnX₆ (X = Cl, Br, I) show immense potential for upcoming energy conversion and solar cell-based technologies.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1262 - 1283"},"PeriodicalIF":2.2,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of negative hydroxyl ions at the SnO2/perovskite layer interface on the performance of perovskite solar cells","authors":"Mehdi Banihashemi,&nbsp;Alireza Kashani Nia","doi":"10.1007/s10825-024-02212-2","DOIUrl":"10.1007/s10825-024-02212-2","url":null,"abstract":"<div><p>In this work we studied the effects of negative hydroxyl ions at the SnO₂/perovskite layer interface with respect to the performance of perovskite solar cells (PSCs). We considered a layer of 1 nm thickness, containing fixed negative ions, at the SnO₂/perovskite layer interface. The density of the ions was set to 7 × 10¹⁹ cm⁻³ in our simulations. To maintain charge neutrality in the SnO2 electron transport layer (ETL), we calculated the number of negative ions in the 1-nm-thick layer and added the same number of positive ions to the remaining part of the ETL. According to our simulation results, the negative ions increased the internal potential drop, reducing the open-circuit voltage of the perovskite solar cell from 0.99 to 0.88 V. On the other hand, the negative non-mobile hydroxyl ions at the interface absorbed some of the mobile positive ions of the perovskite layer, which increased the hysteresis index from 0.177% to 0.707%.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1162 - 1169"},"PeriodicalIF":2.2,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TiCoSb Heusler alloy-based magnetic tunnel junction for efficient computing in memory architecture","authors":"P. B. Alisha,&nbsp;Tripti S. Warrier","doi":"10.1007/s10825-024-02220-2","DOIUrl":"10.1007/s10825-024-02220-2","url":null,"abstract":"<div><p>Computing in memory (CiM) architecture enables computation within the memory array, reducing power-intensive data transmission between the processor and memory. The primary goal of this work is to enhance the energy efficiency of CiM architectures that use spintronic devices. Experiments show that the thermal stability (<span>(Delta)</span>) in magnetic tunnel junctions (MTJs) can be optimized to reduce write energy by adjusting the oxide layer thickness. Based on this finding, this work explores a novel spin-orbit torque random-access memory (SOT) cell that yields a 30% increase in energy efficiency compared to conventional SOT. However, reducing the oxide layer thickness below 1.5 nm to tune <span>(Delta)</span> leads to a decrease in the tunnel magnetoresistance (TMR) ratio leading to reliability concerns. The second part of the work proposes to improve TMR by replacing the conventional MgO oxide layer with a TiCoSb Heusler alloy-based layer and utilizing <span>(hbox {Co}_{2}hbox {MnSb})</span> as the electrode in the modified cell called <span>(Delta)</span>M-SOT. Theoretical and experimental studies demonstrate that this alternative MTJ design exhibits TMR ratios comparable to values reported in the literature. The performance of magnetic full adder CiM design using the proposed <span>(Delta)</span>M-SOT is compared with designs implemented using CMOS, spin-transfer torque random-access RAM (STT), and conventional SOT. Evaluations show that the <span>(Delta)</span>M-SOT-CiM has a reduction of 66% and 30% in logic and data transfer energy, respectively, compared to conventional SOT-CiM design. Furthermore, the data storage and computation operations in <span>(Delta)</span>M-SOT-CiM are found to be significantly faster compared to both STT- and SOT-CiM design. Overall, this work presents a promising SOT design that effectively bridges the gap between the processor and memory by enabling logical functions within memory, eliminating the need for additional circuits.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1249 - 1261"},"PeriodicalIF":2.2,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A nanoelectromechanical energy-reversible switch: theoretical study and verification by experiment of its applicability to adiabatic computing","authors":"Abdulilah M. Mayet,&nbsp;Mohammed Abdul Muqeet,&nbsp;Fadi Kurdahi","doi":"10.1007/s10825-024-02214-0","DOIUrl":"10.1007/s10825-024-02214-0","url":null,"abstract":"<div><p>The article offers a comprehensive exposition of the theoretical underpinnings and empirical substantiation pertaining to the energy-reversible nanoelectromechanical switch (NEMS) in the context of adiabatic computing and biomedical applications. Adiabatic circuits employ a power clock consisting of four phases and employ astute circuit configurations to circumvent the accumulation of transistor charge during logic operations, thereby mitigating power consumption. NEM switches exhibit minimal leakage current and demonstrate a low static power consumption profile, rendering them highly suitable for deployment in various electronic devices. The utilization of energy-reversible NEMs witches has the potential to mitigate adiabatic circuit power consumption. The rationale behind this phenomenon lies in the switch ability to preserve and regenerate mechanical bending energy throughout successive cycles, both in the present and in subsequent switching events. The present study aims to investigate the advantages associated with the utilization of NEMS, encompassing both three-terminal and energy-reversible variations, as opposed to CMOS (complementary metal–oxide–semiconductor) transistor switch within adiabatic circuits. This study aims to investigate the dissipation of power clock energy per cycle across a range of frequencies through a comprehensive analysis grounded in theoretical principles and substantiated by empirical evidence. Throughout the course of this investigation, it was observed that the pull-in voltage of energy-reversible NEM switches exhibited a consistent decrease of 13% over consecutive switching cycles. The reduced pull-in voltage results in a decrease in the amount of energy required for switching. In the realm of low-frequency activities that operate at frequencies below 100 kHz, it has been observed that the implementation of noise exclusionary mechanisms has the potential to effectively curtail energy consumption. Henceforth, it is imperative to underscore the primary domains wherein biomedical engineering and low-power applications ought to be accorded paramount significance.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1438 - 1447"},"PeriodicalIF":2.2,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}