Journal of Computational Electronics最新文献_第10页

A two-stage thermal-aware design strategy for chiplet placement and TSV optimization in 2.5D integrated systems 2.5D集成系统中芯片放置和TSV优化的两阶段热感知设计策略

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-19 DOI: 10.1007/s10825-026-02545-0

Zhangxi Xia, Zhongliang Pan

{"title":"A two-stage thermal-aware design strategy for chiplet placement and TSV optimization in 2.5D integrated systems","authors":"Zhangxi Xia, Zhongliang Pan","doi":"10.1007/s10825-026-02545-0","DOIUrl":"10.1007/s10825-026-02545-0","url":null,"abstract":"<div><p>As heterogeneous integration advances toward higher power density, thermal management has become a critical issue for 2.5D system performance and reliability. Existing approaches often treat chiplet placement and through-silicon via (TSV) insertion as independent optimization tasks, which may limit the achievable thermal performance. This paper proposes a two-stage strategy that jointly optimizes chiplet placement and TSV distribution. In Stage I, an improved particle swarm optimization (PSO) algorithm with elite learning and adaptive mutation is proposed to minimize peak temperature, total wirelength, and layout area under physical constraints. In Stage II, a Gaussian process regression (GPR)-based surrogate model is constructed to replace computationally expensive finite element thermal simulations, enabling rapid thermal prediction of TSV spatial configurations. This surrogate model drives a genetic algorithm to optimize TSV configurations in local hotspot regions. Additionally, this work investigates the impact of emerging high thermal conductivity materials, such as single-walled and multi-walled carbon nanotubes, on TSV thermal performance and provides a systematic comparison with traditional copper TSVs. Experimental results demonstrate that the proposed strategy achieves a maximum reduction of 10 K in peak temperature after TSV insertion, significantly enhances temperature uniformity, and reduces the optimization evaluation time to 2.7s. Importantly, the results reveal that TSV spatial distribution plays a more dominant role in thermal management than intrinsic material thermal conductivity, offering new insights for next-generation high-performance packaging technologies.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148008818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sensitivity tuning of SPR sensor for the detection of water pollutants using black phosphorus and CeF3 利用黑磷和CeF3检测水体污染物的SPR传感器灵敏度调优

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-19 DOI: 10.1007/s10825-026-02555-y

Partha Sarkar, Youssef Trabelsi, Arun Uniyal, Ajit Debnath, H. R. Manjunath, Subhashree Ray, Ajay Singh, Gufranullah Ansari, Vineet Dubey, Amrindra Pal

{"title":"Sensitivity tuning of SPR sensor for the detection of water pollutants using black phosphorus and CeF3","authors":"Partha Sarkar, Youssef Trabelsi, Arun Uniyal, Ajit Debnath, H. R. Manjunath, Subhashree Ray, Ajay Singh, Gufranullah Ansari, Vineet Dubey, Amrindra Pal","doi":"10.1007/s10825-026-02555-y","DOIUrl":"10.1007/s10825-026-02555-y","url":null,"abstract":"<div><p>Primary recognition of water pollutants remains challenging due to the restrictions in sensitivity and resolution of conventional sensors. The present study shows a multilayer sensor configuration containing black phosphorus (BP) for improved electric field confinement and cerium trifluoride (CeF<sub>3</sub>) for optimized low loss dielectric tuning capacity in the Kretschmann configuration, enabling sensitive refractive index sensing in water solution (1.33–1.40). Transfer matrix method (TMM) simulations analyze multilayer optical responses and performance metrics, while COMSOL provides electric field visualizations that validate enhanced evanescent coupling. The proposed numerical study gives superior performance with a maximum sensitivity of 417.1104 deg/RIU, detection accuracy of 0.306937 deg<sup>−1</sup>, and a figure of merit of 128.0265 RIU<sup>−1</sup>, outperforming conventional metal-only surface plasmon resonance (SPR) sensor designs. This study establishes the BP–CeF<sub>3</sub> hybrid approach for applications like water quality analysis with environmental monitoring.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148008819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-healing 2D material composites for intelligent smart bandages: Multiphysics simulation and AI-enabled wound assessment 用于智能智能绷带的自修复2D材料复合材料：多物理场模拟和人工智能伤口评估

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-14 DOI: 10.1007/s10825-026-02556-x

Gayatri Padole, Pravin B. Pokle

{"title":"Self-healing 2D material composites for intelligent smart bandages: Multiphysics simulation and AI-enabled wound assessment","authors":"Gayatri Padole, Pravin B. Pokle","doi":"10.1007/s10825-026-02556-x","DOIUrl":"10.1007/s10825-026-02556-x","url":null,"abstract":"<div><p>The development of durable, intelligent wound-care systems is hindered by the mechanical fragility and signal instability of conventional flexible electronics. To address these limitations, this study presents a self-healing smart bandage integrating 2D material–based conductive networks, multimodal sensing, and AI-driven wound-state analytics. The objective is to design and simulate a fully flexible, self-repairing electronic platform capable of monitoring temperature, pH, moisture, and strain while maintaining long-term performance under repetitive deformation. Using COMSOL Multiphysics, the mechanical, electrical, and thermal behavior of a MXene/GO/MoS<sub>2</sub>–hydrogel composite was evaluated, demonstrating 94.7% mechanical healing efficiency, 93.9% electrical conductivity restoration, and temperature measurement accuracy within ± 0.35 °C. Sensor-level simulations confirmed stable biochemical and mechanical responses after healing, while wireless modules achieved reliable BLE transmission up to 5 m. MATLAB-based signal processing improved sensor signal-to-noise ratio by more than 70%, enabling clear feature separation across wound states. Machine-learning and deep-learning models, particularly LSTM networks, achieved 96% classification accuracy with an AUC of 0.97 and average prediction lag below 4 min in early infection detection. These results establish a strong computational foundation for the experimental development of self-healing, AI-enabled smart bandages with significant potential for real-time, personalized wound management.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147938516","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A DRL-based multi-objective optimization framework for static and switching performance of LDMOS 基于drl的LDMOS静态和切换性能多目标优化框架

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-12 DOI: 10.1007/s10825-026-02553-0

Boying Meng, Xiaoyun Huang, Yan Pan, Yuxuan Zhu, Kai Xu

{"title":"A DRL-based multi-objective optimization framework for static and switching performance of LDMOS","authors":"Boying Meng, Xiaoyun Huang, Yan Pan, Yuxuan Zhu, Kai Xu","doi":"10.1007/s10825-026-02553-0","DOIUrl":"10.1007/s10825-026-02553-0","url":null,"abstract":"<div><p>Lateral double-diffused MOSFETs (LDMOS) are widely used in power management circuits. However, co-optimizing the static and switching properties of the LDMOS still faces challenges. This paper presents a novel deep reinforcement learning (DRL)-based multi-objective optimization framework. We first developed a deep neural network (DNN) trained on technology computer-aided design (TCAD) simulation data to address the nonlinear relationship between device design parameters and electrical characteristics. The DNN surrogate model is used to interact between the agent and the DRL environment. Subsequently, we incorporated the surrogate model into the soft actor-critic (SAC) algorithm, enabling intelligent optimization of device parameters through automated exploration of the design space. The effectiveness and practicality of the proposed DRL-based framework for device optimization were validated through comprehensive TCAD simulations. In addition, a typical switch circuit was established in the mixed-mode simulation in TCAD. It demonstrated that the energy consumption of the switch circuit decreased by 15.6%. The proposed method demonstrates inherent flexibility that facilitates adaptation to various device optimization tasks.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147937885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stochastic modeling of exciton transport and recombination processes in semiconductor heterostructures doped with quantum dots 量子点掺杂半导体异质结构中激子输运和复合过程的随机建模

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-11 DOI: 10.1007/s10825-026-02551-2

Karl K. Sabelfeld, Ivan A. Aksyuk

引用次数: 0

Analytical solutions for the energy levels in asymmetric quantum wells 非对称量子阱中能级的解析解

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-11 DOI: 10.1007/s10825-026-02549-w

Daniel R. Celino, Adelcio M. de Souza, Regiane Ragi, Murilo A. Romero

引用次数: 0

The shift to data-driven microelectronics: machine learning for MOSFET modeling, design, and reliability 向数据驱动微电子的转变：MOSFET建模，设计和可靠性的机器学习

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-09 DOI: 10.1007/s10825-026-02552-1

Qianhao Zhang, Junjie Guo, Chaoqun Jiang, Jingyu Yao, Zhikuo Tao

{"title":"The shift to data-driven microelectronics: machine learning for MOSFET modeling, design, and reliability","authors":"Qianhao Zhang, Junjie Guo, Chaoqun Jiang, Jingyu Yao, Zhikuo Tao","doi":"10.1007/s10825-026-02552-1","DOIUrl":"10.1007/s10825-026-02552-1","url":null,"abstract":"<div><p>This article systematically reviews the cutting-edge applications, key challenges, and future directions of machine learning (ML) in metal–oxide–semiconductor field-effect transistor (MOSFET) technology. As device dimensions shrink to the nanoscale, traditional design methods face challenges such as short-channel effects, process variations, and high modeling complexity. Leveraging its powerful data-driven modeling and high-dimensional nonlinear mapping capabilities, machine learning offers a new paradigm for MOSFET performance prediction, inverse design, compact modeling, process variation analysis, and reliability assessment. The article provides a detailed analysis of specific application cases and methodological evolution of ML across several key areas, highlighting its significant advantages in improving design efficiency and optimizing device performance. Simultaneously, this review identifies core bottlenecks in current ML applications, including data dependency, model interpretability, generalization capability, and physical consistency. It also outlines future research directions, such as few-shot learning, physics-informed integration, cross-platform universal modeling, and intelligent electronic design automation integration, to promote the deep integration and collaborative innovation of machine learning and semiconductor technology.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147938109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analytical performance of a 2D photonic crystal nanocavity sensor for hemoglobin concentration measurement 用于血红蛋白浓度测量的二维光子晶体纳米腔传感器的分析性能

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-08 DOI: 10.1007/s10825-026-02548-x

Shivesh Kumar, Mrinal Sen, Haraprasad Mondal, Himanshu Ranjan Das

{"title":"Analytical performance of a 2D photonic crystal nanocavity sensor for hemoglobin concentration measurement","authors":"Shivesh Kumar, Mrinal Sen, Haraprasad Mondal, Himanshu Ranjan Das","doi":"10.1007/s10825-026-02548-x","DOIUrl":"10.1007/s10825-026-02548-x","url":null,"abstract":"<div><p>This study presents a two-dimensional photonic crystal nanocavity biosensor design that incorporates holes within a silicon slab to detect the hemoglobin concentration in blood. Since the refractive index of blood varies linearly with hemoglobin concentration, examining samples with different refractive indices enables accurate quantification of hemoglobin levels. The performance of the sensor is evaluated using the finite-difference time-domain (FDTD) method to observe resonance wavelength shifts at the output port for different blood analytes. Additionally, the photonic band structure is examined through the plane-wave expansion (PWE) method. Variations in the refractive indices of blood components result in corresponding shifts in resonant wavelength and output power. The sensor is designed to precisely measure and monitor hemoglobin concentration for clinical and diagnostic applications while maintaining a simplified fabrication process for enhanced efficiency and cost-effectiveness. The proposed device demonstrates excellent sensing performance, with a high sensitivity of 789.5 nm/RIU, a high quality factor of 1.5254<span>(times)</span>10<span>(^textrm{5})</span>, a low detection limit of 1.282<span>(times)</span>10<span>(^{-6})</span> RIU, and an impressive figure of merit of 7.80065<span>(times)</span>10<span>(^textrm{4})</span> RIU <span>(^mathrm{-1})</span>. The device demonstrates reliable performance throughout temperatures ranging from 0 to 90 <span>(^{circ })</span>C. Furthermore, considering the susceptibility of photonic crystal structures to fabrication imperfections, the study includes an in-depth evaluation of their impact on sensor performance to ensure reliability in real-world applications. With its compact footprint of 95.48 <span>(mu text {m}^2)</span> and excellent sensing capabilities, the proposed biosensor is well-suited for label-free medical diagnostics and photonic integrated circuits.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147829770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A reliable black-hole optimization-based approach for modeling of GaN high electron mobility transistors 基于黑洞优化的GaN高电子迁移率晶体管建模方法

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-08 DOI: 10.1007/s10825-026-02550-3

Anwar Jarndal

{"title":"A reliable black-hole optimization-based approach for modeling of GaN high electron mobility transistors","authors":"Anwar Jarndal","doi":"10.1007/s10825-026-02550-3","DOIUrl":"10.1007/s10825-026-02550-3","url":null,"abstract":"<div><p>This paper presents a black-hole optimization (BHO) based parameters extraction method. The developed method was applied on distributed small-signal equivalent circuit models of GaN HEMT. The BHO as a global technique generates initial values for the model elements that can be tuned in a later step using gradient or simplex local optimization. The reliability of extraction was improved by using measurement-based boundaries for the initially generated candidate solutions. Physics-based restriction conditions were implemented through the optimization process to avoid any nonrealistic values. The developed procedure was demonstrated by modeling different sizes devices on SiC, Diamond and Si substrates at different bias conditions. The modeling accuracy was validated by means of S-premasters simulations, which show a very good fitting to measured data. The extracted values of the models’ elements are consistent with the devices physics and scaling well with the device size. In general, the results obtained prove the applicability of the proposed approach for small-modeling and liner circuit design and providing an accurate and physically consistent framework within the operating conditions considered.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147829778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient terahertz polarization rotator using L-Shaped waveguide l型波导的高效太赫兹偏振旋转器

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-03 DOI: 10.1007/s10825-026-02544-1

Nagat A. Elmahdy, Mohamed Farhat O. Hameed, S. S. A. Obayya, B. M. Younis

{"title":"Efficient terahertz polarization rotator using L-Shaped waveguide","authors":"Nagat A. Elmahdy, Mohamed Farhat O. Hameed, S. S. A. Obayya, B. M. Younis","doi":"10.1007/s10825-026-02544-1","DOIUrl":"10.1007/s10825-026-02544-1","url":null,"abstract":"<div><p>The polarization rotator (PR) is an optical device designed to rotate the polarization of light from one orientation to another, enabling efficient polarization control in integrated photonic circuits. Terahertz (THz) technology requires precise polarization control for high-speed communication and sensing, yet achieving high extinction ratios in compact footprints remains a significant challenge. To address this, a THz-PR based on L-shaped waveguide is designed and numerically analyzed. The proposed PR structure consists of a polyethylene substrate and cladding material, while the core region is made of gallium arsenide (GaAs) material. The modal and propagation characteristics of the presented PR are evaluated by the full vectorial finite-difference method (FVFDM) and mode matching technique, respectively. The geometrical parameters are studied to attain a compact design with minimum crosstalk (CT) where the propagation analysis is performed through the mode matching technique. At an operating frequency of 1.0 THz, the device achieves a high conversion ratio of 99% over a conversion length of about 7.7 mm with low CT = − 22.83 dB. Additionally, the designed waveguide structure shows robust fabrication tolerance, confirming the design’s practical applicability within the THz spectrum. The large conversion efficiency effectively solves the common trade-off between device footprint and signal quality. Therefore, the presented PR serves as a reliable building block for the THz polarization handling devices and systems.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147829259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0