Journal of Computational Electronics最新文献_第9页

Mathematical modeling of solar cells: novel approaches based on Special Trans Function Theory 太阳能电池数学建模：基于特殊反函数理论的新方法

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-12 DOI: 10.1007/s10825-024-02190-5

Martin Ćalasan

{"title":"Mathematical modeling of solar cells: novel approaches based on Special Trans Function Theory","authors":"Martin Ćalasan","doi":"10.1007/s10825-024-02190-5","DOIUrl":"10.1007/s10825-024-02190-5","url":null,"abstract":"<div>In a mathematical sense, regardless of the equivalent circuit, solar cells are represented by nonlinear dependencies of current and voltage. First, this paper discusses novel mathematical formulations of the current–voltage dependencies of solar cells for single-diode, double-diode, and triple-diode models (SDM, DDM, and TDM, respectively). Second, for SDM, although the analytical solution expressed through Special Trans Function Theory (STFT) was known in the literature, in this paper, its applicability was checked for the first time, and a comparison was made with a literature approach. Third, for both DDM and TDM, novel original iterative procedures for current–voltage dependencies based on the application of the STFT have been proposed. Fourth, the accuracy and efficiency of all the proposed solutions were confirmed by observing two different, well-known solar cells. Furthermore, the applicability of the proposed solutions was confirmed by experimentally measuring the current‒voltage characteristics of solar cells under different climatic conditions. The proposed modeling approaches undoubtedly represent a new field for the application of STFTs.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1137 - 1147"},"PeriodicalIF":2.2,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141351635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A feasibility study of microwave UAV imaging based on multi-station polarimetric radars 基于多站偏振雷达的无人飞行器微波成像可行性研究

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-12 DOI: 10.1007/s10825-024-02185-2

Haolin Zhang, Jiaxin Xie, Yabo Liu, Xin Zhao, Zhongjun Yu, Zicheng Wang, Shichao Chen

引用次数: 0

Unveiling the diverse applications and problem-solving capabilities of the MOM-GEC hybrid approach: a comprehensive systematic review 揭示 MOM-GEC 混合方法的各种应用和解决问题的能力：全面系统审查

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-12 DOI: 10.1007/s10825-024-02169-2

Mariem Abdi, Taoufik Aguili

{"title":"Unveiling the diverse applications and problem-solving capabilities of the MOM-GEC hybrid approach: a comprehensive systematic review","authors":"Mariem Abdi, Taoufik Aguili","doi":"10.1007/s10825-024-02169-2","DOIUrl":"10.1007/s10825-024-02169-2","url":null,"abstract":"<div>Hybrid numerical methods show great potential in enhancing conventional approaches, particularly when dealing with complex structures beyond the capabilities of individual methods or standard software. This paper provides a comprehensive overview of the Method of Moments combined with the Generalized Equivalent Circuit (MOM-GEC) in electromagnetic modeling. Through comparative analysis with traditional numerical methods such as the Method of Moments, Finite Difference Time Domain (FDTD), and Finite Element Method (FEM), MOM-GEC’s unique advantages in adaptability, accuracy, and computational efficiency are highlighted. Mathematical formulations based on equations are integrated to clarify the method’s concepts and integration processes. The study showcases MOM-GEC’s successful deployment in various applications, demonstrating its versatility and efficacy in intricate scenarios such as antenna arrays, graphene-based metamaterial devices, and dosimetry in partially enclosed environments. Each case study undergoes re-evaluation by incorporating the generalized equivalent circuit approach, emphasizing MOM-GEC’s effectiveness in addressing diverse challenges. This underscores MOM-GEC’s versatility and efficacy across complex scenarios, reaffirming its value in electromagnetic modeling.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 4","pages":"791 - 818"},"PeriodicalIF":2.2,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141355083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Potential of TiO2 as a capping layer for industrial c-Si PERC solar cells 二氧化钛作为工业化晶体硅 PERC 太阳能电池封盖层的潜力

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-12 DOI: 10.1007/s10825-024-02187-0

Aamenah Siddiqui, Muhammad Usman, Anders Hallén

{"title":"Potential of TiO2 as a capping layer for industrial c-Si PERC solar cells","authors":"Aamenah Siddiqui, Muhammad Usman, Anders Hallén","doi":"10.1007/s10825-024-02187-0","DOIUrl":"10.1007/s10825-024-02187-0","url":null,"abstract":"<div>Titanium dioxide (TiO2) has gained popularity especially in photovoltaic applications, owing to its transparency in the visible region, and scratch resistance. In this work, the potential of TiO2 as a capping layer for c-Si p-type SiNx passivated emitter and rear contact (PERC) solar cells is studied through extensive optical and device simulations. The bifacial PERC solar cell model used in this study is calibrated with an experimental device having an efficiency of 22.19%. Device simulation results show that TiO2 deposited by the mesoporous technique outperforms atmospheric pressure chemical vapor deposition (APCVD) and atomic layer deposition (ALD)-based TiO2 layers when capped over SiNx (n = 2.1) passivated solar cells. Furthermore, it is shown that the efficiency of SiNx (n = 2.1)/TiO2 based solar cells is maintained, even when the TiO2 layer thickness varies from 75 to 95 nm. To enhance the efficiency further, the type of SiNx layer (characterized by the n value), and the thicknesses of SiNx and TiO2 layers are optimized simultaneously to find the best combination of these parameters. The best front side solar cell efficiency of 22.43%, is obtained when a stack of SiNx(n = 1.99)/TiO2 (t = 58/76 nm) is used. Similarly, a rear side efficiency of 16.59% is achieved when the rear side Al2O3/SiNx stack is capped with mesoporous TiO2. These efficiencies are 0.24 and 1.25% higher, respectively, when compared to the original SiNx passivated PERC solar cell, demonstrating the prospective of using TiO2 in encapsulant-free commercial photovoltaic applications.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 4","pages":"874 - 883"},"PeriodicalIF":2.2,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141351530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A review of structural and electronic properties of graphyne-based nanotubes 石墨基纳米管的结构和电子特性综述

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-11 DOI: 10.1007/s10825-024-02181-6

Roya Majidi

引用次数: 0

Advancing microwave ablation applicators: integrating computational modeling of a graphene-based applicator with machine learning for ablation zone prediction 推进微波消融涂抹器：将基于石墨烯的涂抹器计算建模与机器学习相结合，进行消融区预测

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-06 DOI: 10.1007/s10825-024-02186-1

Suyash Kumar Singh, Amar Nath Yadav

{"title":"Advancing microwave ablation applicators: integrating computational modeling of a graphene-based applicator with machine learning for ablation zone prediction","authors":"Suyash Kumar Singh, Amar Nath Yadav","doi":"10.1007/s10825-024-02186-1","DOIUrl":"10.1007/s10825-024-02186-1","url":null,"abstract":"<div>This research focuses on the design and optimization of a graphene-based microwave ablation applicator (MWA) for tumor treatment. The unique properties of graphene, such as high impedance at microwave frequency and tunable Fermi energy, make it an ideal candidate for inducing charge carriers through an electric field or chemical doping. The study further employs machine learning techniques, including support vector regression (SVR) and artificial neural networks (ANN) to predict the ablation zone. The applicator design incorporates a helix antenna element connected to a coaxial cable working at 2.45 GHz with a graphene sheet and T-ring attached to the outer conductor. The challenge of achieving a zero-Fermi energy is addressed by introducing defects to increase surface resistivity, resulting in an impedance close to the required value. The results show that the graphene-based applicator enhances the ablation zone, leading to efficient and controlled tumor treatment. To predict the ablation zone accurately, the study employs machine learning techniques, including SVR and ANN utilizing Taguchi method to reduce computational complexity. Large and round ablation zone is achieved using novel applicator. Further, the performance metrics, including root-mean-squared error and coefficient of determination (R2), are utilized to evaluate the predictive capabilities of the model and found to be optimum. The research demonstrates the potential of graphene in improving MWA treatment and highlights the importance of machine learning in optimizing MWA and predicting treatment outcomes.<h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 4","pages":"832 - 850"},"PeriodicalIF":2.2,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-024-02186-1.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141379417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance analysis of CsPbI3-based solar cells under light emitting diode illumination as an energy harvester for IoT and indoor photovoltaics 发光二极管照明下的 CsPbI3 太阳能电池作为物联网和室内光伏发电能源收集器的性能分析

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-05 DOI: 10.1007/s10825-024-02180-7

M. Sujith, R. Thandaiah Prabu, ATA. Kishore Kumar, Atul Kumar

{"title":"Performance analysis of CsPbI3-based solar cells under light emitting diode illumination as an energy harvester for IoT and indoor photovoltaics","authors":"M. Sujith, R. Thandaiah Prabu, ATA. Kishore Kumar, Atul Kumar","doi":"10.1007/s10825-024-02180-7","DOIUrl":"10.1007/s10825-024-02180-7","url":null,"abstract":"<div>Internet of things (IoT) has necessitated the development of indoor photovoltaics to enable a web of self-powered wireless sensors/nodes. We analysed a CsPbI3 wide band gap perovskite for indoor photovoltaic application. An Indoor photovoltaic (IPV) device based on CsPbI3 showed a theoretical efficiency of 51.5% at a band gap of 1.8 eV under indoor light-emitting diode (LED) illumination. This high efficiency is due to better capture of the narrow emission spectrum of LED by a high band gap CsPbI3 absorber. Under low luminance of indoor light sources, there is a low density of photogenerated carriers, which increases the ratio of trapped electrons to photogenerated electrons. The low photogenerated carrier density lowered bulk recombination, and the high trapped electrons to photogenerated electrons ratio increases IPV sensitivity toward interfacial recombination. Finally, the device optimization strategies of the IPV device, distinct from outdoor illumination devices are highlighted.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 4","pages":"866 - 873"},"PeriodicalIF":2.2,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141383167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hydrogen detector in Kretschmann configuration based on an inorganic perovskite 基于无机过氧化物的克雷奇曼构型氢探测器

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-05 DOI: 10.1007/s10825-024-02171-8

Qihui Ye, Gang Song

{"title":"Hydrogen detector in Kretschmann configuration based on an inorganic perovskite","authors":"Qihui Ye, Gang Song","doi":"10.1007/s10825-024-02171-8","DOIUrl":"10.1007/s10825-024-02171-8","url":null,"abstract":"<div>We theoretically investigate a hydrogen (H(_2)) detector in a plasmonic structure involving an inorganic perovskite. The structure is composed of a prism, a silver layer, a perovskite layer (CsPbBr(_3)), and a palladium layer (Pd). The palladium layer absorbs H2, which transforms it into a Pd-H layer. Due to the large difference in dielectric constants between Pd and Pd-H, the reflection versus the incident angle (theta) exhibits great differences ((Delta R)) between the structures with a Pd layer and with a Pd-H layer. Our calculation results show that the working wavelength has a substantial impact on (Delta R). The working wavelength not only affects the dielectric constants of the materials in our structure, but also influences the skin depth of surface plasmon polaritons (SPPs) in the CsPbBr(_3) layer, which couple with the Pd or Pd-H layers. A long working wavelength provides a longer skin depth, which couples more energy of the SPPs with the Pd or Pd-H layers. With an increase in Ag layer thickness, the dissipation of our proposed structure reduces the maximum value of (Delta R). According to our calculations, there is an optimal thickness of the CsPbBr(_3) layer for which the value of (Delta R) is the largest. The results show the competition between the coupling and the dissipation of the SPP intensity along the direction perpendicular to the layers in the CsPbBr(_3) layer. At certain conditions, (Delta R) reaches a value of 0.13, which is about 20% of the reflection value. The detector we designed demonstrates good performance, with many potential applications.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 3","pages":"672 - 676"},"PeriodicalIF":2.2,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141384788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficiency analysis of discontinuous Galerkin approaches for the application onto quantum Liouville-type equations 应用于量子刘维尔型方程的非连续伽勒金方法的效率分析

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-04 DOI: 10.1007/s10825-024-02178-1

Valmir Ganiu, Dirk Schulz

引用次数: 0

A new stacked gate oxide L-shaped tunnel field effect transistor 新型叠层栅极氧化物 L 型隧道场效应晶体管

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-06-03 DOI: 10.1007/s10825-024-02183-4

Kaveh Eyvazi, Hamid Reza Yaghoubi, Mohammad Azim Karami

引用次数: 0