Journal of Computational Electronics最新文献

{"title":"Design a compact square-ring antenna using a thin film of HTS materials","authors":"Mohamed Bedra,&nbsp;Sami Bedra,&nbsp;Djemai Arar,&nbsp;Djamel Benatia,&nbsp;Tarek Fortaki,&nbsp;Akram Bediaf","doi":"10.1007/s10825-025-02369-4","DOIUrl":"10.1007/s10825-025-02369-4","url":null,"abstract":"<div><p>In this study, we explored a square-ring microstrip antenna operating on both isotropic and anisotropic substrates, in both conductor and superconductor states, using an enhanced cavity model. We examined various parameters, including slots, patch thickness, dielectric permittivity, and temperature, and their impact on the resonant frequency and surface impedance components. The results indicated a low resonant frequency due to the removal of part of the central patch. It was also observed that critical temperature significantly impacts the resonant frequency, resulting in a sharp reduction. Additionally, the effect of patch thickness on both surface resistance and reactance showed a decrease in both parameters. These findings reveal that reducing energy loss led to an increase in resonant frequency and improved antenna performance. These results are beneficial in various ways, including enhancing our antenna’s performance while maintaining the compact size of the geometrical structure.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145144049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Selective filter using Thue–Morse structures by the finite element and transfer matrix methods","authors":"Zaky A. Zaky,&nbsp;Haifa A. Alqhtani,&nbsp;Mohamed El Malki,&nbsp;Ilyas Antraoui,&nbsp;Ali Khettabi,&nbsp;Mohammed Sallah","doi":"10.1007/s10825-025-02364-9","DOIUrl":"10.1007/s10825-025-02364-9","url":null,"abstract":"<div><p>This work analyzes the propagation of acoustic waves in quasi-periodic structures for filter applications. The study focuses on a proposed one-dimensional quasi-periodic structure employing generalized Thue–Morse sequences. The suggested configuration consists of two basic building blocks: the block ‘<i>X</i>’ is a parallel configuration of closed resonators grafted on the main duct. The block ‘<i>Y</i>’ has a single open resonator integrated into the same main duct. Using the transfer matrix method and finite element method, the study investigates the acoustic bandgap characteristics of Thue–Morse. The present work leverages both methods, comparing their predictions and emphasizing the impact of multidimensional effects, particularly in the context of Thue–Morse sequences. Besides, the results show that acoustic band gaps can be tuned, and there are localized modes that can help filter waves and suppress high-frequency noise.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145144056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Field–potential finite-difference time-domain (FiPo FDTD) technique for computational electromagnetics","authors":"L. Avazpour,&nbsp;S. W. Belling,&nbsp;M. L. King,&nbsp;S. Schmidt,&nbsp;I. Knezevic","doi":"10.1007/s10825-025-02349-8","DOIUrl":"10.1007/s10825-025-02349-8","url":null,"abstract":"<div><p>Modeling light–matter interactions at the nanoscale requires accurate handling of coupled quantum and electromagnetic systems. This coupling requires information about the electric scalar potential <span>(phi)</span> and the magnetic vector potential <span>({textbf{A}})</span>, which are not typically calculated in standard computational electromagnetics implementations. To that end, we have developed a field–potential finite-difference time-domain (FiPo FDTD) algorithm, which solves a set of first-order equations for <span>(phi)</span> and <span>({textbf{A}})</span> alongside equations for the electric and magnetic fields <span>({textbf{E}})</span> and <span>({textbf{H}})</span>. The FiPo Basic code is essentially conventional FDTD, but with an added module that calculates the potentials. The FiPo Hybrid code self-consistently calculates both fields and potentials and is particularly suitable for coupling with quantum electronic transport solvers because it can be sourced by the potentials themselves. To terminate the domain and mimic infinite space, we have derived and implemented a convolutional perfectly matched layer (CPML) absorbing boundary condition for FiPo FDTD whose performance is on par with state-of-the-art CPMLs for standard FDTD. We present FiPo simulation results on several example systems.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-025-02349-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Direct bandgap transformation in silicon and germanium nanowires and the effect of oxygen doping","authors":"Haoze Wang,&nbsp;Zhongmei Huang,&nbsp;Yinlian Li,&nbsp;Weiqi Huang,&nbsp;Shi-Rong Liu","doi":"10.1007/s10825-025-02366-7","DOIUrl":"10.1007/s10825-025-02366-7","url":null,"abstract":"<div><p>We present a computational study on the band structures of silicon (Si) nanowires grown along th [001] direction and germanium (Ge) nanowires grown along the [111]_ᅩ (perpendicular to [111] direction), in which various diameters of nanowires and oxygen (O) doping bonds on the surface are considered. The calculation results show that a direct band gap can be obtained on the Si [001] nanowires or the Ge [111]_ᅩ nanowires, which is attributed to the conduction band valley shifting from <i>X</i> to <i>Γ</i> point for Si [001] nanowires and shifting from L to Γ point for Ge [111]_ᅩ nanowires. In the calculation investigation, the quantum confinement (QC) effect and the Heisenberg principle related to ⊿<i>k</i> ~ 1/⊿<i>x</i> on the quantum nanowires are explored for transforming from indirect bandgap to direct bandgap. Surprisingly, the electron localized states are built from Si = O double bond and Si–O–Si bridge bond on nanowire surface at conduction band valley, in which the three energy levels’ system is built for lasing, including the opening states due to the QC effect on nanowire structures as pumping levels and the electron localized states originated from impurities on surface as emission with lasing levels. The mechanism and the model of the direct bandgap transformation for emission with lasing are built in Si and Ge nanowires doped with oxygen. These interesting results have a good application in optoelectronics devices and large-scale integration.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Machine learning-enhanced multi-gas discrimination with a miniaturized MOS sensor array","authors":"Ngoc Viet Nguyen,&nbsp;Viet Chien Nguyen,&nbsp;Huy Minh Le,&nbsp;Van Hieu Nguyen","doi":"10.1007/s10825-025-02354-x","DOIUrl":"10.1007/s10825-025-02354-x","url":null,"abstract":"<div><p>Accurate and miniaturized gas sensing has become increasingly essential for real-time environmental monitoring and industrial safety. This study proposes a computationally enhanced microelectronic gas sensing platform that combines a compact metal oxide semiconductor (MOS) sensor array with machine learning algorithms for selective multi-gas detection. The core of the system is the MICS4514 sensor, which integrates two miniaturized MOS sensing elements into a single package, enabling detection of carbon monoxide, nitrogen dioxide (NO₂), ammonia (NH₃), and hydrogen (H₂) across various concentration levels. Sensor output data were processed using several supervised machine learning models, including Decision Tree, Random Forest, Quadratic Discriminant Analysis (QDA), and Gradient Boosting. While QDA yielded the highest accuracy in initial classifications, data augmentation strategies significantly improved GB's performance, achieving 100% accuracy in gas discrimination. In addition, linear regression analysis was employed to estimate gas concentrations, demonstrating its feasibility for quantitative sensing. This integration of microscale sensor technology and data-driven computational modeling underscores the potential of embedded intelligence in low-power, cost-effective gas sensors. The approach presented here supports the development of scalable on-chip sensing solutions for smart electronics and Internet-of-Things (IoT)-enabled environmental surveillance systems.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Metal-free MWCNT and sugarcane bagasse composites: sustainable solutions for enhanced X-band microwave absorption","authors":"Hitender Gupta,&nbsp;Rajesh Khanna,&nbsp;Mayank Kumar Rai","doi":"10.1007/s10825-025-02362-x","DOIUrl":"10.1007/s10825-025-02362-x","url":null,"abstract":"<div><p>The design of the cost-effective, eco-friendly and sustainable microwave absorbers is still difficult due to material’s properties limitation. This work bridges this gap by developing a microwave absorber using sugarcane bagasse (SB), an agriculture waste (environmentally friendly) mixed with metal-free multi-walled carbon nanotubes (MWCNTs). Five samples (SB, SBCNT-1, SBCNT-2, SBCNT-3, and SBCNT-5) of 4 mm thickness are prepared with varying MWCNT loadings (0–5 wt%) and tested for the X-band (8.2–12.4 GHz). Dielectric properties are analyzed via the coaxial transmission line technique, while reflection loss (RLmin) is measured using a free-space system. The dielectric constant and loss factor of the samples are improved by 32% and 84% by increasing the loading percentage of MWCNTs from (0 to 5 wt %) into SB. Pure SB exhibited a 1.84 GHz absorption bandwidth with RLmin =  − 14.64 dB at 11.8 GHz. Adding 1 wt.% MWCNTs (SBCNT-1) improved RLmin to − 19.91 dB at 10.92 GHz (99.99% absorption) and effective absorption bandwidth to 2.45 GHz. Higher MWCNT loadings further increased bandwidth: SBCNT-2 (3.3 GHz, 78% X-band coverage) and SBCNT-3 (3.9 GHz, 92% coverage), representing a 112% improvement over SB. However, SBCNT-5 showed reduced bandwidth (2.7 GHz), attributed to surpassing the percolation threshold, where excessive conductivity promotes reflection. The tunable dielectric properties and scalable fabrication highlight these composites as sustainable alternatives to conventional absorbers, balancing performance, cost, and environmental benefits.</p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and evaluation of an analytical model for one-dimensional ballistic Schottky barrier GAA carbon nanotube FETs including BTBT effects","authors":"Ibrahim L. Abdalla,&nbsp;Fatma A. Matter,&nbsp;Eslam S. El-Mokadem,&nbsp;Hesham F. A. Hamed,&nbsp;Aziza I. Hussein,&nbsp;Ahmed. A. Afifi","doi":"10.1007/s10825-025-02337-y","DOIUrl":"10.1007/s10825-025-02337-y","url":null,"abstract":"<div><p>This paper presents a novel analytical model that incorporates the band-to-band tunneling (BTBT) effect for the Schottky-barrier carbon nanotube transistor (SB-CNTFET). This advancement has paved the way for effective routes in designing and simulating ultra-scaled-down circuits. The model has been developed to provide an analytical solution to the current Landauer integral equation. To achieve this solution, approximations for the Fermi–Dirac distribution function, the band-to-band tunneling probability, and the Wentzel-Kramers-Brillouin (WKB) transmission probability have been employed. In this context, the proposed approach was utilized to model a one-dimensional (1D) Schottky barrier (SB) Gate-All-Around (GAA) CNTFET. The suggested model exhibits a high degree of agreement with experimental data, as demonstrated by the following errors: 1.6% in the threshold voltage, 4.5% in the on-current, and 1.35% in the drain-induced barrier lowering (DIBL). Furthermore, the efficiency of the proposed model is underscored by a reported computation time of approximately 1.39 s, representing a significant improvement over existing numerical models. This notable reduction in computing time highlights the advantages of employing an analytical method for CNTFET modeling. Consequently, this work successfully merges the speed and accuracy of circuit simulators.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Developing a hybrid single band carrier transport model for (Al,Ga)N heterostructures","authors":"Michael O’Donovan,&nbsp;Robert Finn,&nbsp;Patricio Farrell,&nbsp;Timo Streckenbach,&nbsp;Julien Moatti,&nbsp;Stefan Schulz,&nbsp;Thomas Koprucki","doi":"10.1007/s10825-025-02333-2","DOIUrl":"10.1007/s10825-025-02333-2","url":null,"abstract":"<div><p>Aluminium gallium nitride (Al,Ga)N alloys and heterostructures are used in the development of UV light emitting devices, and can emit at energies extending into the UV-C spectral range. In the UV-C wavelength window and thus at high AlN content, devices exhibit poor quantum efficiencies. In order to aid the development of these devices, simulation techniques which capture the essential physics of these materials and heterostructures should be used. Due to a change in band ordering in a quantum well at compositions close to Al<span>(_{0.75})</span>Ga<span>(_{0.25})</span>N, special attention should be given to the treatment of valence band states in device simulation. In this work we develop a hybrid single band effective mass model which is informed by degree of optical polarization data obtained from atomistic multi-band calculations. Overall, the hybrid single band effective mass model is benchmarked against tight-binding electronic structure calculations. To do so a confining energy landscape is extracted from the tight-binding model and used as input for the single band effective mass calculations. Moreover, the extracted tight-binding energy landscape is transferred to a drift-diffusion model, allowing therefore for a multi-scale study of transport properties of a single (Al,Ga)N quantum well embedded in a <i>p</i>-<i>i</i>-<i>n</i> junction. Our results show that wider wells lead to a lower turn-on voltage due to a reduction of the band gap, but the internal quantum efficiency of these wells is lower than in narrower wells. Alloy disorder leads to carrier localization and an uneven distribution of recombination within the quantum well plane, which gives rise to percolation currents. A comparison of results with ‘pure’ band simulations shows that when TE emission dominated, the heavy hole mass is a good approximation. In contrast, where band mixing was strong between heavy hole and split-off bands the mass from the split off band was very effective.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-025-02333-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced UV plasmon resonance in oscillating silicon nanoparticles","authors":"Mehboob Alam,&nbsp;Muhammad Hamza Amjad,&nbsp;Ahsan Irshad,&nbsp;Waleed Ahmad","doi":"10.1007/s10825-025-02360-z","DOIUrl":"10.1007/s10825-025-02360-z","url":null,"abstract":"<div><p>Enhanced plasmonic UV (UltraViolet) scattering and absorption occur due to the excitation of electric resonance modes in silicon (Si) nanoparticles, making them suitable for UV spectroscopy and soft optical metamaterial applications. Integrating Si nanoparticles into soft material gives the tunability, efficiency, and scalability necessary to attain active metamaterials. Exciting surface plasmon resonances in the UV achieves tunability and amplified scattering and absorption in Si nanoparticles. The existing solutions to explain the localized surface plasmon resonance in Si nanoparticles contain infinite series expansions, which limits the basic understanding of the dominant mode behavior. We propose a spherical wave impedance-based approach, which applies fundamental principles from linear circuit theory. It defines impedance as the ratio between electric and magnetic fields, allowing us to derive expressions for various cross sections. Comparison with the electromagnetic field solution (Mie solution) establishes a close match for the scattering, absorption, and extinction response. The model is compact and explains the transfer of energy utilizing lumped circuit components, which is valuable for developing rapid designs of Si nanoparticle-based soft optical metamaterials and metasurfaces.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultrawideband Lu chaotic surface-based microwave absorber design for stealth applications","authors":"Fikret Alpay Tekşen,&nbsp;Olcay Altıntaş,&nbsp;Berker Çolak,&nbsp;Mertcan Oral,&nbsp;Ahmet Sertol Köksal,&nbsp;Arlet Patricia Franco,&nbsp;Mehmet Bakır,&nbsp;Uğur Cem Hasar,&nbsp;Muharrem Karaaslan","doi":"10.1007/s10825-025-02361-y","DOIUrl":"10.1007/s10825-025-02361-y","url":null,"abstract":"<div><p>We present a novel ultrawideband microwave absorber designed using Lu chaotic system parameters and the Julia fractal set scaling function. A code developed based on the Lu chaotic system parameters was utilized to generate 3D visuals through numerical computation software. These visuals were converted to grayscale and processed with a Gaussian filter to obtain the final pattern. The resulting pattern was then transferred to an FIT-based electromagnetic simulation program, where simulation studies were conducted. The chaotic patterned resonator was placed on a Magtrex 555 material substrate, known for its frequency-dependent permittivity and permeability properties. A series of numerical studies on absorption performance such as various substrate materials (FR4 and RO4003), attractor variations, dimension, and substrate thickness are investigated. The dimension of the unit cell is monitored at 35 mm × 35 mm for the best absorption rate. It is observed that the operating frequency of the microwave absorber is between 2.5 and 18 GHz, considering the frequency range where the reflection coefficient is less than − 10 dB (magnitude less than 0.3). It can be expressed that the proposed structure demonstrates ultrawideband performance over this frequency range, covering multiple microwave bands (L-, S-, C-, X-, and Ku-band). We believe this innovative study provides valuable insights into advancing stealth technology by introducing dynamic and unique resonator architectures instead of conventional designs.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}