Journal of Computational Electronics最新文献_第9页

A compact memristive quantum FET (memQFET) model with Landauer transport and WKB tunneling for circuit-level simulation 一种具有兰道尔输运和WKB隧道的紧凑记忆量子场效应管（memQFET）模型

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-06-04 DOI: 10.1007/s10825-026-02569-6

Mehmet Sağbaş, Shahram Minaei

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First-principles study on the evolution and annealing of hydrogen bridge defects at the a-SiO2/Si(100) interface a-SiO2/Si（100）界面氢桥缺陷演化及退火的第一性原理研究

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-06-03 DOI: 10.1007/s10825-026-02568-7

Hong Luo, Di Qi, Zizhao Ma, Xin Guo, Hang Zhou, Yang Liu, Xu Zuo

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Optimization of the chirp and nonlinear effects on different order solitons 啁啾和非线性效应对不同阶孤子的优化

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-06-03 DOI: 10.1007/s10825-026-02577-6

Mohammed Salim Jasim AL-Taie

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Design, analysis and optimization of photonic crystal Mach-Zehnder-Interferometer based force sensor 基于光子晶体马赫-曾德尔干涉仪的力传感器设计、分析与优化

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-06-02 DOI: 10.1007/s10825-026-02576-7

Basavaprasad, Venkateswara Rao Kolli, Srinivas Talabattula

{"title":"Design, analysis and optimization of photonic crystal Mach-Zehnder-Interferometer based force sensor","authors":"Basavaprasad, Venkateswara Rao Kolli, Srinivas Talabattula","doi":"10.1007/s10825-026-02576-7","DOIUrl":"10.1007/s10825-026-02576-7","url":null,"abstract":"<div>This study presents a newly designed force sensor based on a Photonic Crystal Mach–Zehnder Interferometer (PC-MZI). The proposed force sensor is designed using Silicon-on-Insulator (SOI) technology. The mechanical micro cantilever beam (MCB) in conjunction with PC-MZI is modeled and evaluated with the finite element and Finite-Difference-Time-Domain (FDTD) methods. The Finite-Difference Time-Domain (FDTD) method is applied to model, analyze, and optimize the PC-MZI structure to achieve a high quality factor. The optimized structure serves as the sensing element. The band gap of the sensor MZI is evaluated employing PWE band solver from optiFDTD designer. To experience maximum stress and to obtain higher sensitivity, sensing arm of PC-MZI is integrated at fixed end of MCB and reference arm of PC-MZI is integrated on the base of micro cantilever base. When the cantilever beam’s free end receives a force, the volume average stress in the sensing arm portion of PC-MZI increases, which is determined with the FEM approach. Increasing the applied stress in the sensing arm enhances its effective refractive index, which in turn produces a linear shift in the resonant wavelength of the transmission spectrum at the PC-MZI output waveguide. The Finite-Difference Time-Domain (FDTD) method is employed to examine electromagnetic wave propagation within the proposed force sensor. The proposed device exhibits a minimum detectable force of 32.25 nN, a maximum quality factor of 22,129, and a sensitivity of 2.17 nm/(upmu)N. Moreover, the sensor demonstrates a linear response across an applied force range of 0 to 3 (upmu)N.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148172562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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First-principles elucidation of enhanced a-IGZO TFT performance via hydrogen passivation of metal–metal bonds 通过金属-金属键的氢钝化增强a-IGZO TFT性能的第一性原理阐明

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-30 DOI: 10.1007/s10825-026-02567-8

Shihong Yu, Yawei Lv, Lei Liao, Kenli Li, Changzhong Jiang

{"title":"First-principles elucidation of enhanced a-IGZO TFT performance via hydrogen passivation of metal–metal bonds","authors":"Shihong Yu, Yawei Lv, Lei Liao, Kenli Li, Changzhong Jiang","doi":"10.1007/s10825-026-02567-8","DOIUrl":"10.1007/s10825-026-02567-8","url":null,"abstract":"<div>The doping effect of protonic hydrogen (H+) in amorphous In–Ga–Zn–O (a-IGZO) has recently attracted significant research interest. Here, we systematically investigate H+ dynamics in a-IGZO and its impact on the macroscopic transport properties of thin-film transistors (TFTs), by combining density functional theory with quantum transport simulations. We reveal that H+ not only disrupts the local formation of the metal–metal (M–M) bond induced by oxygen (O) vacancies, but also passivates their detrimental effects on carrier transport by forming a metal–H (M–H) bond. Moreover, H+ can directly bond with O to form O–H bonds, which exert only a minimal additional impact on carrier transport. Our results suggest that, under positive bias stress conditions, H+ may suppress the reformation of M–M bonds, which is consistent with suppression of the reversible defect-evolution pathway observed in the simulations. Under H-poor conditions, the formation energy of the M–H bond is − 0.39 eV, within 0.21 eV of most O–H bond formation energies, while transformations between M–H and O–H bonds are hindered by energy barriers exceeding 1 eV. Furthermore, by employing a graph neural network to construct a tight-binding model of the defective a-IGZO channel, our quantum transport simulations support the beneficial role of H doping, showing that it enhances device performance through the passivation of M–M bonds. Additionally, in systems without pre-existing M–M bond defects or those containing O–O bond defects, H doping exhibits only a limited impact on device performance. This study provides new insights for passivating defects and enhancing the transport properties and stability of a-IGZO.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148173436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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TCAD-driven optimization of power performance in (beta)-(Al(_{x})Ga(_{1-x}))(_{2})O(_{3})/Ga(_{2})O(_{3}) MODFETs via parameter tuning tcad驱动下的(beta) -(Al (_{x}) Ga (_{1-x})) (_{2}) O (_{3}) /Ga (_{2}) O (_{3}) modfet的功率性能优化

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-21 DOI: 10.1007/s10825-026-02557-w

Ashvinee Deo Meshram, Anumita Sengupta, Gourab Dutta

{"title":"TCAD-driven optimization of power performance in (beta)-(Al(_{x})Ga(_{1-x}))(_{2})O(_{3})/Ga(_{2})O(_{3}) MODFETs via parameter tuning","authors":"Ashvinee Deo Meshram, Anumita Sengupta, Gourab Dutta","doi":"10.1007/s10825-026-02557-w","DOIUrl":"10.1007/s10825-026-02557-w","url":null,"abstract":"<div>This article presents a comprehensive study on the impact of both intrinsic and extrinsic parameters on the ON- and OFF-state performance of (beta)-(Al(_{x})Ga(_{1-x}))(_{2})O(_{3})/Ga(_{2})O(_{3}) modulation-doped field-effect transistors (MODFETs), using a meticulously calibrated TCAD framework tailored for power switching applications. Intrinsic parameters such as barrier layer thickness, delta-doping concentration and gate-to-drain spacing, alongside extrinsic factors including surface passivation, gate-connected and source-connected field plates are systematically investigated for their impact on device behavior. Particular emphasis is placed on understanding and optimizing the trade-off between ON-resistance and breakdown voltage. Through careful parameter tuning, we demonstrate the design of a MODFET with both high OFF-state breakdown voltage and low ON-resistance, leading to a substantial enhancement in the power figure of merit (PFOM). A maximum PFOM of 30.6 MW/cm(^{2}) is achieved, representing a fourfold improvement over a comparable device without a gate-connected field plate. Furthermore, considering recent progress in material growth and fabrication technologies, an additional improvement of nearly eightfold in PFOM is projected. This study provides physical insight into device operation and offers a valuable framework for the future development of high-performance MODFETs for high-power switching applications.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148009266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An explicit charge-based compact model for strained junctionless square-gate FETs 应变无结方栅极场效应管的显式基于电荷的紧凑模型

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-21 DOI: 10.1007/s10825-026-02561-0

Syafizah Afidah Affandi, Nurul Ezaila Alias, Afiq Hamzah, Michael Loong Peng Tan, Fatimah Khairiah Abd Hamid

{"title":"An explicit charge-based compact model for strained junctionless square-gate FETs","authors":"Syafizah Afidah Affandi, Nurul Ezaila Alias, Afiq Hamzah, Michael Loong Peng Tan, Fatimah Khairiah Abd Hamid","doi":"10.1007/s10825-026-02561-0","DOIUrl":"10.1007/s10825-026-02561-0","url":null,"abstract":"<div>An explicit charge-based compact model for a long-channel strained junctionless square-gate FET (JL-SGFET) is presented. The unstrained core model is first developed by solving Poisson’s equation under the parabolic potential approximation, from which an implicit unified charge-control model (UCCM) is derived. Mobile charge densities are obtained analytically using the Lambert W function. The total mobile charge is formulated by decoupling the UCCM into depletion and complementary charge parts, eliminating smoothing functions. Strain effects are then incorporated through modifications to threshold voltage, work function, band gap, electron affinity and mobility. A continuous charge-based drain current is derived by solving the Pao-Sah integral, followed by terminal charge expressions. Comparisons with TCAD simulations show excellent agreement across Ge mole fractions, doping concentrations and device geometries. The model maintains accuracy within (15%) error for (qN_DH_{si}/16epsilon _{si} < 0.36) without fitting parameters.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-026-02561-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148009267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical modeling and explainable machine learning-based multi-objective analysis of graphene nanoribbon infrared phototransistors 石墨烯纳米带红外光电晶体管的数值模拟与可解释性机器学习多目标分析

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-20 DOI: 10.1007/s10825-026-02558-9

R. Ouchen, T. Berghout, F. Djeffal

{"title":"Numerical modeling and explainable machine learning-based multi-objective analysis of graphene nanoribbon infrared phototransistors","authors":"R. Ouchen, T. Berghout, F. Djeffal","doi":"10.1007/s10825-026-02558-9","DOIUrl":"10.1007/s10825-026-02558-9","url":null,"abstract":"<div>In this work, we present a multi-objective performance analysis of a graphene nanoribbon (GNR)–germanium (Ge) infrared phototransistor using quantum-transport modeling combined with an explainable ensemble learning approach. Device operation is described by self-consistent Schrödinger–Poisson solutions within the non-equilibrium Green’s function (NEGF) formalism. Key figures of merit (FoMs), including off-state current, Ion/Ioff ratio, responsivity, and maximum drive current, are investigated as functions of channel length, germanium thickness and doping, and HfO2 gate oxide thickness. The proposed GNR–Ge phototransistor achieves responsivity exceeding 4.6 × 104 A/W, Ion/Ioff ratios above 50 dB, and enhanced drive current at channel lengths down to 10 nm. Explainable Random Forest analysis identifies channel length as the dominant factor controlling leakage current, current ratio, and responsivity, while germanium doping primarily governs the drive current. The results provide physics-based design guidelines for low-power, high-performance infrared phototransistors.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148009441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Temperature sensitive hybrid octagonal photonic crystal fiber glucose sensor 温度敏感混合八角形光子晶体光纤葡萄糖传感器

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-20 DOI: 10.1007/s10825-026-02560-1

Md. Mahbub Hossain, Anika Zaman, Md. Golam Rousul, Hemadri Bairagi, Md. Shamim Ahsan, Md. Ziaul Amin, Bikash Nakarmi, Md. Maniruzzaman, Md Irfan Hussain Sikder

{"title":"Temperature sensitive hybrid octagonal photonic crystal fiber glucose sensor","authors":"Md. Mahbub Hossain, Anika Zaman, Md. Golam Rousul, Hemadri Bairagi, Md. Shamim Ahsan, Md. Ziaul Amin, Bikash Nakarmi, Md. Maniruzzaman, Md Irfan Hussain Sikder","doi":"10.1007/s10825-026-02560-1","DOIUrl":"10.1007/s10825-026-02560-1","url":null,"abstract":"<div>We present a hybrid-octagonal-photonic-crystal-fiber (HOPCF)-based glucose sensor, in which the core is circular and cladding is octagonal including elliptical holes that are filled with glucose as a sensing material. The proposed HOPCF-based glucose sensor is analyzed applying the finite element techniques with a PML (perfectly-matched-layer) boundary from 1.2 (mu)m to 1.8 (mu)m wavelength range. The sensor performance parameters depend on the glucose concentration, operating wavelength, temperature of the sensing element, and the radius of the core, respectively. We find that when the temperature of the sensing element or radius of the core increases, the key sensor performance parameter, especially the sensitivity, decreases. Moreover, the proposed sensor shows 81.81% relative sensitivity, 0.183 (times)10(^{-8}) dB/m of confinement loss, 2.44(times)10(^{-2}) birefringence, 13.69 (mu)m(^{2}) effective area, and 7.798 w(^{-1})km(^{-1}) non-linear co-efficient at 1.55 (mu)m of wavelength, respectively. Our proposed HOPCF-based glucose sensor offers a comparatively high sensitivity, moderate birefringence, and low confinement loss while these sensor performance parameters are glucose concentration, temperature, wavelength, and core radius dependent.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148009234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Computational modeling and machine learning–assisted optimization of a TaSe2/Si/Ag multilayer SPR biosensor for high-sensitivity cancer biomarker screening and detection 用于高灵敏度癌症生物标志物筛选和检测的TaSe2/Si/Ag多层SPR生物传感器的计算建模和机器学习辅助优化

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2026-05-19 DOI: 10.1007/s10825-026-02554-z

M. S. Sivagama Sundari, Azath Mubarakali, U. Arun Kumar, Shoeib Amin Banday

{"title":"Computational modeling and machine learning–assisted optimization of a TaSe2/Si/Ag multilayer SPR biosensor for high-sensitivity cancer biomarker screening and detection","authors":"M. S. Sivagama Sundari, Azath Mubarakali, U. Arun Kumar, Shoeib Amin Banday","doi":"10.1007/s10825-026-02554-z","DOIUrl":"10.1007/s10825-026-02554-z","url":null,"abstract":"<div>Cancer remains a leading cause of mortality worldwide, necessitating the development of rapid, cost-effective, and highly sensitive diagnostic technologies. In this study, a surface plasmon resonance (SPR) biosensor based on a TaSe2/Si/Ag multilayer structure in the Kretschmann configuration is proposed for label-free detection of colorectal cancer biomarkers. The incorporation of two-dimensional TaSe2 enhances plasmonic coupling and near-field confinement at the metal–dielectric interface. Finite element method (FEM) simulations using COMSOL Multiphysics were employed to optimize the layer thicknesses, resulting in an optimal configuration comprising 41 nm Ag, 3 nm TaSe2, and 1.2 nm Si. The optimized structure achieves a minimum reflectance of 0.022% with significant electric field enhancement. The sensor operates over a refractive index range of 1.36–1.401 RIU, enabling detection of biologically relevant variations. A maximum angular sensitivity of 500°/RIU, figure of merit of 103.37 RIU−1, quality factor of 17.78, detection accuracy of 0.207−1, and detection limit of 0.011 RIU are achieved. A strong linear relationship (R2 = 0.99142) between resonance angle and refractive index confirms reliable sensing performance. Furthermore, machine learning models were employed to predict sensor responses, achieving prediction accuracy exceeding 99.6% (R2 > 0.996) while significantly reducing computational time. The proposed integration of advanced 2D materials and machine learning provides a promising platform for early-stage cancer screening and early detection and for point-of-care diagnostics.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148008820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0