Journal of Computational Electronics最新文献_第9页

Effect of incident angle of electromagnetic radiation on the electronic and thermoelectric properties of POPGraphene nanoribbons 电磁辐射入射角对持久性有机聚合石墨烯纳米带的电子和热电性能的影响

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-04-03 DOI: 10.1007/s10825-024-02158-5

Mobina Ardyani, Seyed Ahmad Ketabi, Reza Kalami

{"title":"Effect of incident angle of electromagnetic radiation on the electronic and thermoelectric properties of POPGraphene nanoribbons","authors":"Mobina Ardyani, Seyed Ahmad Ketabi, Reza Kalami","doi":"10.1007/s10825-024-02158-5","DOIUrl":"10.1007/s10825-024-02158-5","url":null,"abstract":"<div>In this work, we theoretically investigate the influence of electromagnetic radiation on the electronic and thermoelectric properties of Penta-Octa-Penta Graphene (POPGraphene) nanoribbons. Specifically, we study the effects of varying the incident angle (0–90 degrees) of radiation on the density of states, transmission function, Seebeck coefficient, and electronic figure of merit (ZTe) of the nanoribbons. Our results demonstrate that the electronic properties are highly dependent on radiation conditions due to their influence on electron transport. We find that the density of states and transmission function exhibit distinct radiation angle-dependent behaviors that highlight the role of the radiation's electric field orientation. Importantly, the ZTe shows significant modulation with the incident angle, achieving optimized values up to 0.275. These findings provide insights into controlling the electronic and thermoelectric properties of POPGraphene nanoribbons using electromagnetic radiation. Our work underscores opportunities for developing Graphene-based nanophotonic devices with enhanced performance through all-optical means. The demonstrated tunability via irradiation paves the way for potential applications such as optical switches, sensors, and next-generation optoelectronics using POPGraphene nanoribbons.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 3","pages":"647 - 660"},"PeriodicalIF":2.2,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140578371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Correction: On injection in intrinsic single‑carrier devices 更正：关于本征单载流子器件中的注入问题

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-04-01 DOI: 10.1007/s10825-024-02149-6

Jason A. Röhr

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Investigating the role of structural parameters of gold thin film nanohole arrays on the plasmonic phenomenon of extraordinary optical transmission 研究金薄膜纳米孔阵列的结构参数对超常光传输等离子现象的作用

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-03-31 DOI: 10.1007/s10825-024-02156-7

Mehdi Tavakoli, Ali Shirpay

{"title":"Investigating the role of structural parameters of gold thin film nanohole arrays on the plasmonic phenomenon of extraordinary optical transmission","authors":"Mehdi Tavakoli, Ali Shirpay","doi":"10.1007/s10825-024-02156-7","DOIUrl":"10.1007/s10825-024-02156-7","url":null,"abstract":"<div>Given the physical constraints in electronic integrated circuit production, the adoption of photonic integrated circuits (PICs) is burgeoning. However, utilizing photonic crystals in PIC construction faces challenges in compressing and efficiently transmitting light in dimensions much smaller than the light wavelength, alongside the lack of direct interaction with conventional electronic integrated circuits. To address these challenges, plasmonic technology has been employed, leveraging the intrinsic interaction between photons and electrons and the phenomenon of extraordinary optical transmission (EOT) through nanohole arrays. This study investigates the significance of plasmonic structures in PIC realization by examining various structural parameters such as hole radius, layer thickness, substrate refractive index, and electric field distribution in EOT properties. Through an analysis of each parameter’s effect on the proposed structure, an optimal structure is introduced, maximizing both absolute optical transmission efficiency and high-quality factor Q. Main calculations based on Rayleigh-Wood anomalies analysis, along with simulations using the finite-difference time-domain method, demonstrate the ability to predict and interpret the presence or absence of surface plasmon resonance peaks in the transmission spectrum independently of complex and time-consuming numerical simulations. This phenomenon holds important implications for the design of photonic integrated circuits, plasmonic sensors, and optoelectronic devices.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 3","pages":"540 - 551"},"PeriodicalIF":2.2,"publicationDate":"2024-03-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140358474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Parameter estimation of various PV cells and modules using an improved simultaneous heat transfer search algorithm 利用改进的同步传热搜索算法估算各种光伏电池和组件的参数

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-03-29 DOI: 10.1007/s10825-024-02153-w

Xu Chen, Shuai Wang, Kaixun He

{"title":"Parameter estimation of various PV cells and modules using an improved simultaneous heat transfer search algorithm","authors":"Xu Chen, Shuai Wang, Kaixun He","doi":"10.1007/s10825-024-02153-w","DOIUrl":"10.1007/s10825-024-02153-w","url":null,"abstract":"<div>Accurate and reliable parameter estimation plays a pivotal part in the design of solar PV systems. However, the current PV parameter estimation (PVPE) methods still face great challenges due to the complicated characteristics of the PV models. In this paper, a novel meta-heuristic algorithm called improved simultaneous heat transfer search (ISHTS) is proposed to solve various PVPE problems. In ISHTS, two efficient strategies are embedded into the heat transfer search algorithm to improve the search performance. First, a simultaneous heat transfer strategy is adopted to diverse search equations for each generation to ameliorate the global detection. Second, a novel elitist perturbation strategy with adaptive perturbation amplitude is employed to enhance the local exploitation. The proposed ISHTS is applied to solve different PVPE problems including single diode, double diode, three diode and PV module. The performance of ISHTS is extensively compared with several state-of-the-art PVPE methods. Simulation results demonstrate that ISHTS achieves root-mean-square error (RSME) as low as (9.8602 times 10^{-4}), (9.8248 times 10^{-4}), (9.8248 times 10^{-4}) and (2.4251 times 10^{-3}), and obtains standard deviation (SD) as small as (8.88 times 10^{-17}), (2.05 times 10^{-6}), (1.88 times 10^{-5}) and (3.40 times 10^{-17}) for four different PV models, respectively. Based on the simulation results, ISHTS has advantages in terms of solution accuracy, reliability and convergence for various PVPE problems.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 3","pages":"584 - 599"},"PeriodicalIF":2.2,"publicationDate":"2024-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140323504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly efficient slab-loaded microwave resonator design: analytical solution and numerical validation 高效板载微波谐振器设计：分析求解与数值验证

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-03-29 DOI: 10.1007/s10825-024-02150-z

O. Süle, S. Kent

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Multiband, polarization-insensitive absorber operating in the terahertz range 在太赫兹范围内工作的多波段、偏振不敏感吸收器

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-03-26 DOI: 10.1007/s10825-024-02151-y

Ammar Armghan, Lway Faisal Abdulrazak, Muhammad Abuzar Baqir, Muhammad Saqlain, Hammad Al-Shammari

{"title":"Multiband, polarization-insensitive absorber operating in the terahertz range","authors":"Ammar Armghan, Lway Faisal Abdulrazak, Muhammad Abuzar Baqir, Muhammad Saqlain, Hammad Al-Shammari","doi":"10.1007/s10825-024-02151-y","DOIUrl":"10.1007/s10825-024-02151-y","url":null,"abstract":"<div>In this study, we analyze a thin-size metasurface-based multiband terahertz (THz) absorber with a top layer comprised of nickel-made circled plus-shaped resonators. The geometric structure of the proposed absorber consists of subwavelength size and periodically arranged nickel resonators at the top followed by substrate SiO2 film, and the silver layer at the bottom features several high absorption bands within the 1–5-THz operating range. The proposed multiband THz absorber shows excellent absorption characteristics with perfect absorptivity, 100% at 1.5 THz, 98% at 3.2 THz, 96% at 3.72 THz, and 100% at 4.26 THz, respectively. The symmetry in the top-layer design of the unit cell shows persistence to incident waves with different polarization and makes this device independent of variation in the polarization of the waves. Besides that, surface current density analysis of the absorber illustrates that high absorption bands are achieved due to the existence of strong electric resonance in the unit cell structure. It is believed that the proposed multiband terahertz absorber with high absorption characteristics and polarization-independent behavior can be used in the field of THz shielding, THz detectors and emitters, THz sensing, and thermal imaging.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 3","pages":"533 - 539"},"PeriodicalIF":2.2,"publicationDate":"2024-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140311793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and analysis of a highly efficient 2D/3D bilayer-based perovskite solar cell 设计和分析高效的基于二维/三维双层的过氧化物太阳能电池

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-03-26 DOI: 10.1007/s10825-024-02152-x

M. Najafi, A. Kiani–Sarkaleh, A. Ghadimi, S. A. Sedigh Ziabari, Ali Abdolahzadeh Ziabari

引用次数: 0

Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET p 型 IV-IV 族 SiGe TFET 的模拟性能和线性度分析

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-03-19 DOI: 10.1007/s10825-024-02141-0

Sadhana Subhadarshini Mohanty, Pradipta Dutta, Jitendra Kumar Das, Sushanta Kumar Mohapatra, Shofiur Rahman, Reem Alanazi, Nadyah Alanazi, Abdullah N. Alodhayb

{"title":"Analog performance and linearity analysis of a p-type group IV-IV SiGe TFET","authors":"Sadhana Subhadarshini Mohanty, Pradipta Dutta, Jitendra Kumar Das, Sushanta Kumar Mohapatra, Shofiur Rahman, Reem Alanazi, Nadyah Alanazi, Abdullah N. Alodhayb","doi":"10.1007/s10825-024-02141-0","DOIUrl":"10.1007/s10825-024-02141-0","url":null,"abstract":"<div>This work investigates a dual-material gate p-channel tunnel field-effect transistor (p-DMG-TFET) with a Si/SiGe heterojunction for achieving better performance in radio frequency (RF) applications. The results of the simulation demonstrate an improved on-current/off-current ratio (Ion/Ioff ~ 109) and minimum subthreshold swing (19 mV/decade) for the proposed Si0.7Ge0.3 hetero-TFET versus Si used as channel material. A comprehensive simulation study of both Si0.7Ge0.3 and Si channel devices is performed, and on the basis of their DC, analog/RF, and linearity performance, a direct comparison reveals improved results for digital and analog applications. Numerous characteristics of the proposed DMG-HJ-TFET, including IDS, CGS, CGD, gm, gds, fT, TGF, TFP, GFP, and GTFP, are investigated and compared with a Si channel device, in which the proposed device shows better performance for RF circuitry applications. RF figures of merit (FOMs) including gm2, gm3, VIP2, VIP3, 1-dB compression point, IIP3, and IMD3 are also investigated for the proposed structure, which again demonstrates better performance.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 2","pages":"244 - 256"},"PeriodicalIF":2.2,"publicationDate":"2024-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140201600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Comment on: “Terahertz rectangular waveguides with inserted graphene films biased by light and their quasi-linear electromagnetic modeling” [J. Comput. Electron. 20 (2021) 169] 评论"太赫兹矩形波导与插入式石墨烯薄膜的光偏压及其准线性电磁建模" [J. Comput.

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-03-12 DOI: 10.1007/s10825-024-02147-8

Afshin Moradi

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Three-dimensional quantum-corrected Monte Carlo device simulator of n-FinFETs n-FinFET 的三维量子校正蒙特卡洛器件模拟器

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-03-11 DOI: 10.1007/s10825-024-02145-w

C. S. Soares, G. F. Furtado, A. C. J. Rossetto, G. I. Wirth, D. Vasileska

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