Journal of Computational Electronics最新文献_第9页

Exploring optimal pyramid textures using machine learning for high-performance solar cell production 利用机器学习探索高性能太阳能电池生产的最佳金字塔纹理

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-04 DOI: 10.1007/s10825-024-02265-3

Denish Hirpara, Paramsinh Zala, Meenakshi Bhaisare, Chandra Mauli Kumar, Mayank Gupta, Manoj Kumar, Brijesh Tripathi

{"title":"Exploring optimal pyramid textures using machine learning for high-performance solar cell production","authors":"Denish Hirpara, Paramsinh Zala, Meenakshi Bhaisare, Chandra Mauli Kumar, Mayank Gupta, Manoj Kumar, Brijesh Tripathi","doi":"10.1007/s10825-024-02265-3","DOIUrl":"10.1007/s10825-024-02265-3","url":null,"abstract":"<div>The pursuit of increasingly efficient and cost-effective solar energy solutions has driven significant advancements in photovoltaic (PV) technologies over the past decade. Among these innovations, bifacial solar cells, which capture sunlight from both the front and back surfaces, with front surface texturing and rear-side optimization playing crucial roles, present a promising avenue for enhancing efficiency compared to conventional designs. The effectiveness of these cells, however, is largely dependent on the optimization of rear surface properties and the material characteristics employed. This study investigates into the pivotal role of surface texture, particularly on silicon wafers, in shaping key performance metrics such as open-circuit voltage, short-circuit current, fill factor, and overall efficiency. Given the complex interdependencies among these parameters, machine learning (ML) tools, specifically random forest regression models, have been utilized to decode these intricate relationships. The findings underscore the significance of surface texture in modulating reflectance from both the rear and front surfaces, which in turn influences the overall performance of the solar cells. By applying ML models, this research provides an improved understanding of the impact of surface characteristics, thereby offering valuable insights into the optimization of design and material selection for next-generation high-performance solar cells. This ML optimization study indicates that the pyramid structures with a height of 3 μm and a base angle of 62° can significantly reduce reflectance to 9% while maximizing solar cell efficiency to 23.61%, marking a substantial advancement over existing designs. This model achieves 75% accuracy on synthetic test data and 78% on experimental data reinforcing model’s applicability despite typical ML limitations in PV systems.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142778188","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of a nested photonic crystal fiber supporting 76 + 36 OAM modes for fiber communication 一种支持76 + 36 OAM模式的嵌套光子晶体光纤的设计

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-04 DOI: 10.1007/s10825-024-02257-3

Khalequzzaman Ansary, Md. Mehedi Hassan, Mohammed Nadir Bin Ali, FNU Israfil, Mohammad Sarwar Hossain Mollah, Abdullah Bin Kasem Bhuiyan, Bikash Kumar Paul

{"title":"Design of a nested photonic crystal fiber supporting 76 + 36 OAM modes for fiber communication","authors":"Khalequzzaman Ansary, Md. Mehedi Hassan, Mohammed Nadir Bin Ali, FNU Israfil, Mohammad Sarwar Hossain Mollah, Abdullah Bin Kasem Bhuiyan, Bikash Kumar Paul","doi":"10.1007/s10825-024-02257-3","DOIUrl":"10.1007/s10825-024-02257-3","url":null,"abstract":"<div>This study introduces a distinctive entwined photonic crystal fiber (PCF) featuring two distinct and independent directed mode sections, collectively supporting a total of 112 orbital angular momentum (OAM) modes, comprising 76 + 36 modes. The confinement loss (CL) ranges approximately between (2.49701times 1{0}^{-11}) and (9.13425times 1{0}^{-9} text{dB}/text{m},) while highest attained OAM purity is (99.31969%) and (98.99258%) at (H{E}_{2, 1}) mode, respectively, for both inner and outer rings. All the modes demonstrate ERIDs exceeding (1{0}^{-4}), and minimum dispersion variation observed is (-856 text{ps}/text{km}-text{nm}). Additionally, we achieved an outstanding isolation performance with the highest attained ISO reaching (294 text{dB}) at ({text{HE}}_{9, 1}) mode and observed a substantial effective mode area of 9.15 μm2 and 25.8μm2, respectively, for inner and outer rings. This research leverages COMSOL Multiphysics' finite element method (FEM) and perfectly matched layer (PML) capabilities alongside MATLAB processing to calculate all key properties of the proposed fiber. Therefore, the suggested PCF demonstrates promising prospects for extended-range, high-capacity data transmission within optical communications and applications related to OAM sensing.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142762021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Properties of cubic GdAlO3 perovskite under pressure: density functional theory and Monte Carlo simulations 压力下立方GdAlO3钙钛矿的性质：密度泛函理论和蒙特卡罗模拟

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-04 DOI: 10.1007/s10825-024-02252-8

Bilal Aladerah, Abeer Alrousan, Abdalla Obeidat, Abdullah Al-Sharif

{"title":"Properties of cubic GdAlO3 perovskite under pressure: density functional theory and Monte Carlo simulations","authors":"Bilal Aladerah, Abeer Alrousan, Abdalla Obeidat, Abdullah Al-Sharif","doi":"10.1007/s10825-024-02252-8","DOIUrl":"10.1007/s10825-024-02252-8","url":null,"abstract":"<div>This study investigates the influence of external hydrostatic pressure on the mechanical, electronic, and magnetic properties of cubic GdAlO3 using density functional theory (DFT) and Monte Carlo (MC) simulations. Mechanically, upon pressure increase, a sizable increase in the elastic constants C12, C11, and C44, as well as in bulk, Young's, and shear moduli of GdAlO3, is observed. This indicates an enhanced stiffness and resistance to deformation upon pressure increase. The band gap shows a notable increase in pressure, which is useful in tuning the electronic properties of specific electronic devices for potential applications. In addition, a stable overall magnetic moment is observed under pressure variation, with increased exchange interaction parameters for Gd-Gd pairs, indicating more robust ferromagnetic ordering. Furthermore, the Monte Carlo simulation revealed increased Curie temperature (TC) from 67K at 0 GPa to 142K at 90 GPa, underscoring strengthened magnetic interactions and thermal resilience under compression.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of a potential photovoltaic absorber based on first principles spectroscopic screening of chalcogenide perovskites: CaZrX3 (X = S, Se) 基于第一性原理光谱筛选硫系钙钛矿CaZrX3 （X = S, Se）的潜在光伏吸收剂研究

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-03 DOI: 10.1007/s10825-024-02245-7

Naincy Pandit, Rashmi Singh, Tarun Kumar Joshi, Akash Shukla, Peeyush Kumar Kamlesh, Anusha Dubey, Tanuj Kumar, Manendra S. Chauhan, Ajay Singh Verma

{"title":"Investigation of a potential photovoltaic absorber based on first principles spectroscopic screening of chalcogenide perovskites: CaZrX3 (X = S, Se)","authors":"Naincy Pandit, Rashmi Singh, Tarun Kumar Joshi, Akash Shukla, Peeyush Kumar Kamlesh, Anusha Dubey, Tanuj Kumar, Manendra S. Chauhan, Ajay Singh Verma","doi":"10.1007/s10825-024-02245-7","DOIUrl":"10.1007/s10825-024-02245-7","url":null,"abstract":"<div>Metal chalcogenide perovskites have a number of benefits over lead-halide perovskites, including superior moisture resistance, light-induced degradation together with nontoxic elemental composition, higher absorption, and exceptional carrier transport properties. These materials have orthorhombic phase Pnma and are potential candidate materials to be used as absorber materials in solar cells. In this study, we propose metal chalcogenide perovskites CaZrX3 (X = S, Se) as a candidate absorber material. Therefore, the investigation of the structural, electrical, optical, thermal, and thermoelectric properties of CaZrX3, where X = S, Se, is being carried out using first principles methods. These proposed semiconducting compounds will meet the requirement for stability against volume change. These materials show a direct band gap of 1.812 eV and 1.117 eV at the Γ point. To better understand the optical transitions in the material, the real and imaginary parts of the dielectric function have been calculated. The remarkable absorption coefficient ((alpha )) exceeding 105 cm−1 above photon energy exceeding bandgap indicates that the materials are suitable for the visible light absorption. For the estimation of photovoltaic performance of CaZrX3 (X = S, Se) and to demonstrate the high photo-absorptivity, the spectroscopic-limited maximum efficiency has been calculated. The results show a maximum photovoltaic efficiency of 26.4% and 32.4% for CaZrS3 and CaZrSe3 respectively at the thickness L = 100 nm. We have also calculated the thermoelectric coefficients. These perovskites are gaining more attention as a thermoelectric material because of their higher Seebeck coefficient, and ultra-low thermal conductivity.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142762014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Realization of energy efficient GF Xtime multiplier using quantum dot cellular automata (QCA) for AES-MixColumn 利用量子点元胞自动机（QCA）实现AES-MixColumn的高能效GF x时间乘法器

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02248-4

P. Rajasekar, H. Mangalam, K. H. Shakthi Murugan, K. Kalaiselvi

引用次数: 0

Next-generation high-performance complex optical sequential circuits: an electro-optic modulation in GaAlAs directional couplers 下一代高性能复杂光顺序电路：GaAlAs定向耦合器中的电光调制

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02242-w

Ajay Yadav, Amit Prakash, Santosh Kumar, Ajay Kumar

{"title":"Next-generation high-performance complex optical sequential circuits: an electro-optic modulation in GaAlAs directional couplers","authors":"Ajay Yadav, Amit Prakash, Santosh Kumar, Ajay Kumar","doi":"10.1007/s10825-024-02242-w","DOIUrl":"10.1007/s10825-024-02242-w","url":null,"abstract":"<div>The concept of optical switching utilizing directional couplers and the electro-optic effect has been leveraged to design various sequential circuits. By applying an appropriate voltage to the core of the couplers, switching of optical pulse signals is achieved through optical tunneling phenomena. This paper presents a comprehensive mathematical analysis of electro-optic effect-based switching, demonstrating its efficacy through 3-D MATLAB simulations of the optical switch layout. A clocked D flip-flop, incorporating an optical delay unit, is examined using 3-D numerical simulations, illustrating the spatial propagation of optical pulses and providing time domain plots for verification. Employing the proposed clocked D flip-flop as a basic module, optically clocked ripple up/down-counters are implemented. Additionally, the design and analysis of an optical 4-bit shift register are discussed, showcasing its ability to effectively shift pulses via 3-D simulations of optical field propagation and time domain plots. This study presents a comprehensive analysis of the extinction ratio, contrast ratio, and amplitude modulation characteristics of the proposed optical code converter circuit. These findings offer an effective methodology for implementing both basic sequential models and complex optical circuits.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Computation of an efficient pipelined fast Fourier transform architecture characterized with real-valued functions 以实值函数为特征的高效流水线快速傅里叶变换体系的计算

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02237-7

Surya Prasad, Arunachalaperumal Chellaperumal

引用次数: 0

Laser interaction with a MIM nanostructure including bowtie aperture and cylindrical holes for plasmonic field enhancement based on strong coupling of LSPR and SPPs 基于LSPR和SPPs强耦合的等离子体场增强激光与包含领结孔和圆柱孔的MIM纳米结构的相互作用

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02258-2

Mohsenifard Atefeh, Mohebbi Masoud

{"title":"Laser interaction with a MIM nanostructure including bowtie aperture and cylindrical holes for plasmonic field enhancement based on strong coupling of LSPR and SPPs","authors":"Mohsenifard Atefeh, Mohebbi Masoud","doi":"10.1007/s10825-024-02258-2","DOIUrl":"10.1007/s10825-024-02258-2","url":null,"abstract":"<div>In this paper, a metal–insulator–metal (MIM) array nanostructure consisting of a bowtie aperture and cylindrical holes is proposed as a field amplifier. This hybrid array consists of a grating film made of gold in which some cylindrical holes are replaced with a bowtie aperture, sapphire substrate, and finally a metal film. The array of cylindrical holes acting as a two-dimensional grating can effectively excite propagating surface plasmon polariton modes along a metal film, but the electric field enhancement inside it is relatively weak. On the other hand, the bowtie aperture, with its sharp corners and small gap, can provide a greater intensity enhancement factor within its gap. The combination of these two MIM nanostructures forms a strong coupling between the propagating and localized surface plasmons, leading to an improvement in field confinement in the bowtie aperture in the sub-diffraction limit and its magnitude increase of 115 times. This effective enhancement can be used in plasmonic sensors, lasers, SERS, etc., applications.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A simple approach for integrating quantum confinement effects into TCAD simulations of tunnel field-effect transistors 一种将量子约束效应集成到隧道场效应晶体管TCAD模拟中的简单方法

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02253-7

Bui Huu Thai, Chun-Hsing Shih, Nguyen Dang Chien

{"title":"A simple approach for integrating quantum confinement effects into TCAD simulations of tunnel field-effect transistors","authors":"Bui Huu Thai, Chun-Hsing Shih, Nguyen Dang Chien","doi":"10.1007/s10825-024-02253-7","DOIUrl":"10.1007/s10825-024-02253-7","url":null,"abstract":"<div>Quantum confinement effects (QCEs) are significant in tunnel field-effect transistors (TFETs) since their operation is based on the mechanism of band-to-band tunneling. This study presents a simple approach for integrating QCEs into the semiclassical TCAD simulations of TFETs. The approach was based on a post-processing computation in which 1D Schrodinger equations were first solved manually, then their solutions were used to modify the conduction and valence band profiles in the 2D TCAD simulations. For each bias condition, only a 1D potential profile at the position of the maximum tunneling generation was adopted to describe the QC through the solutions of Schrodinger equations for electrons and holes. The quantum-simulated results based on this simple method show good agreements with both quantum–mechanical simulations based on a sophisticated approach and experimental data. The analyses also show that the van Dort quantum model available in commercial TCAD simulators is not appropriate for describing QCEs in TFETs. The approach can be practically employed in studying the influences of QCEs on the electrical characteristics, in particular the dependence of QCEs on the body thickness of TFET devices.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum transport properties of a double-barrier quantum well structure based on V-cut edge-patterned armchair graphene nanoribbon 基于v形边型扶手椅石墨烯纳米带的双势垒量子阱结构的量子输运性质

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02264-4

Bikramjit Basumatary, Agile Mathew

引用次数: 0