Journal of Computational Electronics最新文献

{"title":"Enhanced thermoelectric performance of Zr1−xNiSnTax half-Heusler alloys: a first-principle study","authors":"Di Cao,&nbsp;Jiannong Cao","doi":"10.1007/s10825-024-02207-z","DOIUrl":"10.1007/s10825-024-02207-z","url":null,"abstract":"<div><p>First-principles calculations combined with the Boltzmann transport theory were used to calculate the thermoelectric characteristics of Zr_1−xNiSnTa_x (x = 0, 1/4, 1/8, 1/12, 1/16, 1/24, 1/32, 1/36, 1/48, and 1/64). Ta-doped ZrNiSn can effectively improve the Seebeck coefficient of Zr_1−xNiSnTa_x, and it can also reduce its thermal conductivity. The maximum Seebeck coefficients of <i>p</i>-type and <i>n</i>-type Zr_3/4NiSnTa_1/4 are 1117.58 μV/K and − 1059.47 μV/K, respectively. The maximum thermoelectric figure of merit of the <i>p</i>-type Zr_3/4NiSnTa_1/4 thermoelectric material is 0.98, and the maximum thermoelectric figure of merit of the <i>n</i>-type Zr_3/4NiSnTa_1/4 thermoelectric material is 0.97. The optimum thermoelectric figure of merit of Zr_1−xNiSnTa_x studied in this paper is higher than those of other studies. Our results demonstrate the good potential thermoelectric material of Zr_1−xNiSnTa_x for thermoelectric device applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1209 - 1216"},"PeriodicalIF":2.2,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141930636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical prediction of the mechanical, electronic, optical and thermodynamic properties of antiperovskites A3BO (A = K, Rb and B = Au, Br) using DFT scheme: new candidate for optoelectronic devices application","authors":"Salah Uddin,&nbsp;Akash Das,&nbsp;M. A. Rayhan,&nbsp;Sohail Ahmad,&nbsp;Rashel Mohammad Khokan,&nbsp;Md. Rasheduzzaman,&nbsp;Remon Das,&nbsp;Aasim Ullah,&nbsp;Yasir Arafat,&nbsp;Md. Zahid Hasan","doi":"10.1007/s10825-024-02213-1","DOIUrl":"10.1007/s10825-024-02213-1","url":null,"abstract":"<div><p>Density Functional Theory (DFT) is incorporated in this study to examine the thermodynamic, electronic, mechanical, and optical characteristics of antiperovskite compounds A₃BO (A = K, Rb and B = Au, Br). The purpose of the study is to demonstrate a comprehensive understanding of these materials and their potential applications across various fields emphasizing their stability and energetic profiles. The electronic properties, including band structures, and density of states are also analyzed to understand the electrical behavior of these materials, which enables predicting their conductive and semiconductor nature. The band gaps of K₃AuO, K₃BrO, Rb₃AuO, and Rb₃BrO are 0.72 eV, 0.80 eV, 0.15 eV, and 0.29 eV, respectively. The study also investigated the mechanical properties of the antiperovskite structures, including elastic constants, bulk modulus, and shear modulus to provide insights into their mechanical stability and durability. Their Pugh’s ratio (B/G) is below 1.75 and negative Cauchy pressure indicates these compounds are brittle. And machinability index B/C₄₄ &gt; 1.5 implies excellent lubricating properties. This phenomenon extends the potential industrial application of materials with specific mechanical integrity to their structural components. Additionally, the study investigated the optical properties of the A₃BO antiperovskite compounds, including the dielectric function, loss function, reflectivity, conductivity, refractive index, and absorption spectra. These findings provide a comprehensive understanding of how these materials interact with light, which could be useful in the development of optoelectronic devices. Overall, this DFT study provides significant insights into the multifaceted properties of A₃BO antiperovskite compounds, laying the groundwork for further experimental exploration and facilitating the targeted design of materials with tailored properties for specific technological applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1217 - 1237"},"PeriodicalIF":2.2,"publicationDate":"2024-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141920006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"War strategy optimization-based methods for pattern synthesis of antenna arrays and optimization of microstrip patch antenna","authors":"Renjing Gao,&nbsp;Wei Tong,&nbsp;Mingyue Zhang,&nbsp;Qi Wang","doi":"10.1007/s10825-024-02210-4","DOIUrl":"10.1007/s10825-024-02210-4","url":null,"abstract":"<div><p>This paper first presents an application of the war strategy optimization (WSO) algorithm in pattern synthesis of antenna arrays and dimensions optimization of microstrip patch antenna. As a new type of evolutionary algorithm inspired by nature, the WSO algorithm has global optimization ability in solving complex problem including nonlinearity and nonconvexity; therefore, it will exhibit the potential advantages in the above two typical multivariate nonlinear problems. For solving pattern synthesis problem, the sidelobe reduction synthesis and null controlling of linear antenna arrays with different element are selected as numerical cases, and the WSO algorithm achieves the desired main beams width and null depth by optimizing the amplitude-only and the phase-only, respectively. For dimensions optimization of microstrip patch antenna, the WSO algorithm realizes the minimized reflection coefficient (S₁₁) of − 80 dB at 3.1G Hz by optimizing the width and length of rectangle patch antenna. Moreover, compared with the Grasshopper optimization algorithm, the gray wolf optimization algorithm, and the invasive weed optimization algorithm, the WSO algorithm shows higher computational accuracy and faster convergence speed for solving the above two types of optimization problem. Therefore, the WSO algorithm can be widely used to in electromagnetic structure design.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 5","pages":"1125 - 1134"},"PeriodicalIF":2.2,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141929678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Estimating equivalent circuit parameters in various photovoltaic models and modules using the dingo optimization algorithm","authors":"Hasan Temurtaş,&nbsp;Gürcan Yavuz,&nbsp;Serdar Özyön,&nbsp;Aybüke Ünlü","doi":"10.1007/s10825-024-02205-1","DOIUrl":"10.1007/s10825-024-02205-1","url":null,"abstract":"<div><p>While the demand for electrical energy in the world increases daily, a large part of this demand is still provided by fossil fuels. However, the most significant contribution to solving the economic and environmental problems that arise is the spread of renewable energy production systems. Solar power generation systems are one of these renewable energy generation systems. In this study, cell and module parameters are modeled and estimated in different ways to obtain maximum energy from solar cells used in solar power generation systems. Cell and model vendors need to provide complete information to the end user. Therefore, the systems created turn into a nonlinear problem with many unknown parameters. In this study, single-diode model (SDM), double-diode model (DDM), and triple diode model (TDM) for photovoltaic (PV) cells as well as parameter estimations of four different PV modules produced by other vendors were performed for the first time with the dingo optimization algorithm (DOA). The mathematical model of PV module parameters is derived using open-circuit voltage (<i>V</i>_oc), short-circuit current (<i>I</i>_sc), and maximum power point values (<i>P</i>_mpp). The parameter values obtained by the algorithm aim to get the maximum power point curve for each model and module with minimum error. These values are compared with five traditional and five recent meta-heuristic algorithms, which have extreme positions in the literature.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 5","pages":"1049 - 1090"},"PeriodicalIF":2.2,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141930496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain engineered < Si/Si0.97C0.03 > superlattice photodetector for optoelectronic applications: a comprehensive numerical analysis and experimental verification","authors":"Moumita Chakraborty,&nbsp;Pradip Kumar Sadhu,&nbsp;Abhijit Kundu,&nbsp;Moumita Mukherjee","doi":"10.1007/s10825-024-02209-x","DOIUrl":"10.1007/s10825-024-02209-x","url":null,"abstract":"<div><p>In this paper, a strain-modified Si/Si_0.97C_0.03 asymmetrical superlattice exotic type (p + -i-p-n +) avalanche photodetector has been designed for applications on the infrared wavelength region. The photoelectric characteristics of the device are studied by developing a self-consistent quantum phenomena-based drift–diffusion model in conjunction with PSpice simulator. The overall performance of the device has been boosted significantly by introducing strain engineering which enhances the out-plane mobility of the charge particles in the intrinsic/active region of the device. The strain is produced in the intrinsic/active region by inclusion of small amount of carbon (C) into the pure Si material. The proposed strain-modified exotic avalanche photodetector exhibits better performance in terms of quantum efficiency (0.671) and photo-responsivity (0.645 A/W) compared to its planer unstrained Si counterpart (quantum efficiency: 0.481, photo-responsivity: 0.524A/W) at 1800 nm wavelength. Additionally, a 3 × 4 array of photodetectors has been designed using this device and its optoelectronic properties are studied in the IR wavelength region. The superiority of the performance of the 3 × 4 array of photodetectors is established in terms of better quantum efficiency (0.872) and better photo-responsivity (0.851 A/W). The validity of quantum phenomena-based drift–diffusion model is established by comparing the simulated data with experimental findings under similar operating conditions. The developed device can be used in defense as well as biomedical industries for sensing applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 5","pages":"1111 - 1124"},"PeriodicalIF":2.2,"publicationDate":"2024-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141930498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical calculations of the optoelectronic properties of a penta-graphene monolayer: study of many-body effects","authors":"B. Minaie,&nbsp;S. A. Ketabi,&nbsp;J. M. De Sousa","doi":"10.1007/s10825-024-02208-y","DOIUrl":"10.1007/s10825-024-02208-y","url":null,"abstract":"<div><p>Based on density functional theory (DFT), the GW approximation and Bethe–Salpeter equation (BSE), we performed a theoretical calculation to study the electronic and optical properties of penta-graphene (PG) monolayers. Our findings reveal that PG behaves as a semiconductor with an indirect band gap of 2.27 eV at the DFT-GGA level. By incorporating the GW approximation based on many-body perturbation theory, we observed an increase in the band gap, resulting in a quasi-direct band gap of 4.53 eV. Furthermore, we employed the G₀W₀-RPA and G₀W₀-BSE approximations to compute the optical spectra of the monolayer in the absence and in the presence of electron–hole interaction, respectively. The results indicate that the inclusion of electron–hole interactions leads to a red-shift of the absorption spectrum towards lower energies compared to the spectrum obtained from the G₀W₀-RPA approximation. Notably, the optical absorption spectra are predominantly governed by the first bound exciton, characterized by a significant binding energy of 2.07 eV. Our results suggest that the PG monolayer, with its wider band gap and enhanced excitonic effects, is potentially a suitable candidate for the design and fabrication of optoelectronic components.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 5","pages":"1102 - 1110"},"PeriodicalIF":2.2,"publicationDate":"2024-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141885948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A new behavioral-level model of superconducting Josephson junctions with Simulink","authors":"Yalin Zhong,&nbsp;Peng Chen","doi":"10.1007/s10825-024-02206-0","DOIUrl":"10.1007/s10825-024-02206-0","url":null,"abstract":"<div><p>Josephson junctions based on superconducting materials are fundamental components for quantum detection, quantum communication and quantum computers. An accurate behavioral model of Josephson junctions is the prerequisite for predicting the response (or the behavior) of various superconducting circuits. In this study, we present a resistively and capacitively shunted junction model-based behavioral-level model for the current–voltage characteristics of Josephson junctions. This model accurately predicts the current–voltage characteristics and their temperature dependencies of Josephson junctions made of different materials under three typical working modes: underdamped voltage-driven, overdamped current-driven, and underdamped current-driven. Additionally, it forecasts the critical current and superconducting energy gap characteristics with respect to temperature, as well as the constraint relationship between the shunt resistance, superconducting energy gap, and critical current. Comparing the measured data with the simulation predictions, the model has an average accuracy of 89.28<span>(%)</span>, which demonstrate its reliability.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 5","pages":"1091 - 1101"},"PeriodicalIF":2.2,"publicationDate":"2024-08-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141930497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Precise parameter estimation of PEM fuel cell via weighted mean of vectors optimizer","authors":"Badis Lekouaghet,&nbsp;Mohammed Amin Khelifa,&nbsp;Abdelkrim Boukabou","doi":"10.1007/s10825-024-02204-2","DOIUrl":"10.1007/s10825-024-02204-2","url":null,"abstract":"<div><p>This paper deals with the determination of the optimal values to be given for the seven unknown parameters of the proton exchange membrane fuel cell (PEMFC). To this end, the weighted mean of vectors optimizer (INFO) metaheuristic algorithm is applied to estimate these parameters by minimizing the sum of squared errors (SSEs) between the measured and calculated voltages of the PEMFC. Three commercial types of PEMFCs are investigated: (i) BCS 500 W Stack, (ii) NedStack PS6 Stack, and (iii) Horizon 500 W Stack. The accuracy of the applied INFO algorithm is verified by comparing the estimated voltage–current <span>((I-V))</span> characteristics with the measured data. Furthermore, the estimated parameters of electrical PEMFCs, the minimum reached SSE, and the standard deviation Std values achieved by INFO are compared with the results obtained using other competitive metaheuristic optimization algorithms such as Honey badger algorithm, Gradient-based optimizer, Harris hawks optimization, and others. From the obtained results, the convergence curves show that the unknown parameters of the three PEMFCs are better estimated using the proposed INFO than other algorithms.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 5","pages":"1039 - 1048"},"PeriodicalIF":2.2,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141885949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study of chalcogenide-based metal perovskites BaZrX3 (X = S and Se): DFT insight into fundamental properties for sustainable energy generation using AMPS-1D","authors":"Naincy Pandit,&nbsp;Rashmi Singh,&nbsp;Peeyush Kumar Kamlesh,&nbsp;Nitin Kumar,&nbsp;Pawan Sharma,&nbsp;Sarita Kumari,&nbsp;Tanuj Kumar,&nbsp;Samah Al-Qaisi,&nbsp;Ajay Singh Verma","doi":"10.1007/s10825-024-02201-5","DOIUrl":"10.1007/s10825-024-02201-5","url":null,"abstract":"<div><h3>Context</h3><p>Emerging materials inspire us to study one of the perovskite chalcogens made from alkaline-earth-metals (Baryum). Here, we have determined some fundamental properties and explained their applicability in energy conversion device fabrication by first principles calculation. These materials show direct bandgap for BaZrS₃and BaZrSe₃ 1.83 eV and 1.3 eV (at symmetry pointΓ), respectively; Elastic parameters like as Pugh ratio B/G ~ 1.75 and 1.78 for BaZrS₃and BaZrSe₃, respectively and have broader visible absorption spectrum with mechanically stable. The absorption coefficient is greater than 105 cm⁻¹ at photon energy 1.83 eV for BZS and 1.3 eV for BZSe. For photovoltaic application, electron transport layer (ETL) has been varied, while putting hole transport layer (HTL) for the findings of efficiency, and ZnO is proven with 21.97% efficiency. This emerging study shows that these materials may be used as an alert substance in energy conversion device fabrications and the proposed outcomes are in good acceptance with the experimental and other theoretical data. As per the optical and thermoelectric parameters of these materials, we infer that both are promising candidates in energy conversion devices.</p><h3>Methods</h3><p>Fundamental properties based on the full-potential linearized augmented plane wave (FP-LAPW) method, this computation was performed using the WIEN2k simulation code. In order to calculate the photovoltaic properties of semiconducting perovskites, it is one of the most reliable methods. For application point of view, the Microelectronic and Photonic Structures-one-dimensional (AMPS-1D) analysis tool has been used for simulation of photovoltaic devices. There are several critical absorbance parameters, including band gap, defect density, thickness, concentration of doping, and operating temperature, that have been taken into consideration. </p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 5","pages":"1014 - 1028"},"PeriodicalIF":2.2,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141867919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nonlinear dynamics of a Josephson junction coupled to a diode and a negative conductance","authors":"M. A. Kakpo,&nbsp;C. H. Miwadinou","doi":"10.1007/s10825-024-02200-6","DOIUrl":"10.1007/s10825-024-02200-6","url":null,"abstract":"<div><p>We studied the nonlinear dynamics of a shunted inductive Josephson junction coupled to a diode and a negative conductance. Taking into account the non-harmonicity of the junction, based on Kirchhoff’s laws, we have developed the mathematical model which governs the dynamics of the circuit. The fixed points of the system are determined, and their stabilities are analyzed using the Routh–Hurwitz criterion. The bifurcation and transition to chaos of the model are studied using the the fourth-order Runge–Kutta method; the system displays a rich dynamics. The range of values of each parameter leading to periodic and chaotic electrical oscillations is obtained through the analysis of the effect of these parameters on each type of dynamics. Finally, the implementation by microcontroller is carried out in order to experimentally verify the different dynamics obtained numerically.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 5","pages":"1000 - 1013"},"PeriodicalIF":2.2,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141867920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}