Journal of Computational Electronics最新文献_第8页

Simulation of a supercapciator device and its properties based on graphene/hBN electrode material and KCl as an electrolyte 以石墨烯/氢化硼为电极材料，以氯化钾为电解液的超级电容器装置及其性能模拟

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-28 DOI: 10.1007/s10825-025-02363-w

Fatemeh Shirvani, Mohammad Reza Jafari, Aliasghar Shokri

{"title":"Simulation of a supercapciator device and its properties based on graphene/hBN electrode material and KCl as an electrolyte","authors":"Fatemeh Shirvani, Mohammad Reza Jafari, Aliasghar Shokri","doi":"10.1007/s10825-025-02363-w","DOIUrl":"10.1007/s10825-025-02363-w","url":null,"abstract":"<div>In this work, a supercapacitor device with a graphene/hexagonal boron nitride (hBN) electrode and KCl electrolyte was simulated to investigate its electrochemical performance. Key parameters such as potential and current of the cell, ion concentration ((hbox {K}^+) and (hbox {Cl}^-)), electrode and electrolyte potential, and total current density at the interface were analyzed over time. The electrode current density as a function of electrode potential was also studied. The results demonstrated a maximum specific capacitance of 624.72 F/g at a current density of (-hbox {1.08 A/cm}^2) and a potential of 0.116 V, confirming the system’s behavior within the supercapacitor range. Additionally, the maximum power dissipation density was 54.13 (hbox {W/cm}^3) at a current density of −0.61 (times) (hbox {10}^{-4}) (hbox {A/cm}^2). These findings highlight the potential of KCl as an effective electrolyte in graphene/hBN-based supercapacitors, paving the way for enhanced energy storage technologies.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145145508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reliable leakage-enabled memristor model for large-scale circuits 可靠的大规模电路漏使能忆阻器模型

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-28 DOI: 10.1007/s10825-025-02377-4

Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad

{"title":"Reliable leakage-enabled memristor model for large-scale circuits","authors":"Mohammad Milad Rabiee, Morteza Gholipour, Nima TaheriNejad","doi":"10.1007/s10825-025-02377-4","DOIUrl":"10.1007/s10825-025-02377-4","url":null,"abstract":"<div>Memristors offer great potential for advanced memory and computing systems due to their ability to retain their resistance state. Several simulation models have been proposed to enable early analysis. However, there are convergence issues associated with some models, especially faster ones. This paper proposes reliable solutions to overcome convergence challenges in memristor simulation models. We studied and analyzed potential factors, including model nonlinearity, complexity, and the incorporated window functions. Adaptive solutions are developed to dynamically adjust to memristor behavior, effectively mitigating the convergence problem and improving accuracy and stability. We used genuine memristor experimental data and verified our solutions against the BELIEVER model in the simulations. These proposed adaptive techniques can enhance memristor convergence, enabling their adoption in diverse fields for improved simulation conditions. The maximum error of the proposed solution in the I–V characteristic remains below 15%. This level of accuracy is suitable, while it ensures the reliability of the circuit’s output with this specific model modification. </div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145145510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Utilizing dual inverted pyramid structures to optimize light absorption for significantly enhanced performance of perovskite solar cells 利用双倒金字塔结构优化光吸收，显著提高钙钛矿太阳能电池的性能

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-27 DOI: 10.1007/s10825-025-02375-6

Wang Wang, Enze Quan, Minchen Xie, Lijia Chen

{"title":"Utilizing dual inverted pyramid structures to optimize light absorption for significantly enhanced performance of perovskite solar cells","authors":"Wang Wang, Enze Quan, Minchen Xie, Lijia Chen","doi":"10.1007/s10825-025-02375-6","DOIUrl":"10.1007/s10825-025-02375-6","url":null,"abstract":"<div>Perovskite solar cells (PSCs) have garnered significant attention in photovoltaics due to their simple fabrication process, low cost, and excellent photovoltaic performance. To enhance the power conversion efficiency (PCE), we designed a PSC incorporating a charge transport layer with a dual inverted pyramid reflectance-reducing structure. The effect of the depth of the inverted pyramid spires on the PCE of PSCs was investigated. The results indicate that introducing the dual inverted pyramid in PSCs with the structure of ITO/PEDOT: PSS/MAPbI3/SnO2/Ag significantly reduces light reflectivity and enhances light absorption. This structural optimization facilitates better light energy capture, which improves PCE of PSCs. Additionally, the dual inverted pyramid structure increases the interfacial contact area between the light absorption layer and the charge transport layer and shortens carrier transport distances, contributing to improved carrier transport efficiency. The PSCs based on the dual inverted pyramid structure demonstrate outstanding photovoltaic performance, with a maximum short-current density (Jsc) of 26.24 mA/cm2 and a PCE of 24.92%. Compared to the conventional PSCs without the pyramid structure, the Jsc and PCE increased by 16.3% and 11.3%, respectively.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145145312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic and magnetocaloric properties of a C20 fullerene structure: Monte Carlo study C20富勒烯结构的磁性和磁热学性质：蒙特卡罗研究

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-23 DOI: 10.1007/s10825-025-02368-5

A. Jabar, S. Benyoussef, L. Bahmad

引用次数: 0

Signal integrity analysis in mixed CNT bundle interconnects using EM-RA 基于EM-RA的混合碳纳米管束互连信号完整性分析

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-21 DOI: 10.1007/s10825-025-02353-y

Ashish Singh, Ajay Kumar, Amit Kumar

{"title":"Signal integrity analysis in mixed CNT bundle interconnects using EM-RA","authors":"Ashish Singh, Ajay Kumar, Amit Kumar","doi":"10.1007/s10825-025-02353-y","DOIUrl":"10.1007/s10825-025-02353-y","url":null,"abstract":"<div>This paper presents the exponential matrix-rational approximation (EM-RA) technique for signal integrity analysis in on-chip mixed-carbon-nanotube (CNT) bundle (MCB) interconnects incorporating the temperature (T) and dielectric surface roughness (DSR). The variations considered are temperature, ranging from 300 to 500 K, and dielectric surface roughness (DSR), spanning from 10 to 180 pm. The impact on the area and delay of the MCB interconnect is observed by varying the shells of multi-walled CNTs (MWCNTs) and the number of single-walled CNTs (SWCNTs). Using the proposed EM-RA technique for MCBs, the delay in three-line coupled interconnects is obtained by simplifying its multi-conductor transmission line representation to an equivalent single-conductor model. The transient response has been obtained through SPICE simulation across different numbers of conducting channels in MWCNTs compared to SWCNTs and is validated using EM-RA. The in-phase and out-of-phase delays are computed in this paper considering varying temperatures and dielectric surface roughness for different conducting channels of MWCNTs in relation to SWCNTs. From SPICE simulations, it is observed that with fewer shells in MWCNTs, the MCB on average requires 40.42% smaller area in comparison to the bundled SWCNTs for the same crosstalk delay. Subsequently, for the equivalent MCB area, the delay improves by 47.18% for MWCNTs with fewer shells than for bundled SWCNTs.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145144123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Lead-free, stable, mixed SnGe perovskites for light to electricity conversion applications in indoor and space conditions 无铅、稳定、混合锗钙钛矿，用于室内和空间条件下的光电转换应用

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-20 DOI: 10.1007/s10825-025-02367-6

Dhonvan Srinu, Atul Kumar

{"title":"Lead-free, stable, mixed SnGe perovskites for light to electricity conversion applications in indoor and space conditions","authors":"Dhonvan Srinu, Atul Kumar","doi":"10.1007/s10825-025-02367-6","DOIUrl":"10.1007/s10825-025-02367-6","url":null,"abstract":"<div>The substitution of Pb by mixed Sn–Ge in perovskite materials has shown enhanced structural stability, due to the formation of a thin superficial layer of germanium oxide which effectively shielding the inner atoms, boosting thermal stability and relieving lead toxicity. A theoretical analysis of stable mixed Sn–Ge perovskites, specifically MA(Sn0.5Ge0.5)I3, Cs(Sn0.5Ge0.5)I3, and Rb(Sn0.5Ge0.5)I3 is presented in context of space, terrestrial, and indoor conditions. Initially, mixed Sn–Ge perovskite viability is probed in terms of optical properties and material suitability for light-to-electricity conversion. A comparative analysis of power conversion efficiency, achievable output power under AM0 (space), AM1.5G (terrestrial), and CFL (indoor) is undertook. Finally manuscript summarizes the available incident illuminations, the extent of their dissipation in the device as (spectrum and radiative losses) and the remaining fraction as output electrical power. Simulation results substantiate pragmatic prospects of mixed Sn–Ge in perovskite for light to electricity conversion applications.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An advanced miniaturization approach for designing compact rectangular microwave patch antennas with metamaterial substrates 采用超材料基板设计小型矩形微波贴片天线的先进微型化方法

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-20 DOI: 10.1007/s10825-025-02370-x

Oleg Rybin, Muhammad Raza, Anatolii Shevchenko, Sergey Shulga

{"title":"An advanced miniaturization approach for designing compact rectangular microwave patch antennas with metamaterial substrates","authors":"Oleg Rybin, Muhammad Raza, Anatolii Shevchenko, Sergey Shulga","doi":"10.1007/s10825-025-02370-x","DOIUrl":"10.1007/s10825-025-02370-x","url":null,"abstract":"<div>We present a theory for determining the linear dimensions of compact rectangular microwave patch antennas on metamaterial substrates with a high real part of the effective relative permittivity. This theory demonstrates that significant miniaturization of the volume profile of such antennas is achievable with enhanced performance using a metamaterial substrate instead of a dielectric substrate. It is assumed that the metamaterial substrate is a host dielectric medium with periodically embedded metallic inclusions. The proposed theory is based on a simple analytical algorithm design to minimize the volume profile of the antenna patch. It establishes a relationship between the effective relative permittivity of the substrate, the resonant frequency, and the substrate thickness. The proposed approach achieves up to 80% reduction in the antenna volume profile. Notably, the proposed optimization approach does not impose any restrictions on the geometry of the metamaterial unit cell used to create the antenna substrate except for the case of positive values of the effective relative permittivity and permeability. Furthermore, it does not require substantial computational resources for designing the linear dimensions of patch antennas. The derived relations are intended to be used along with modern electromagnetic simulators for the CAD design of compact microwave metamaterial patch antennas with a rectangular patch and the substrate with cylindrical copper inclusions of circular cross section. The proposed optimization theory is validated through an electromagnetic simulator based on the finite difference time-domain method. Moreover, appropriate computer simulations have shown that employing metamaterials in place of conventional dielectric materials to create the substrate not only leads to the miniaturization of the antenna but also enhances its overall performance.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and application of high-frequency floating and grounding memristor emulator based on MOS transistor 基于MOS晶体管的高频浮地忆阻器仿真器的设计与应用

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-20 DOI: 10.1007/s10825-025-02358-7

Bingchen Liu, Wei Li, Sihao Yang, Yuefeng He, Guangzhen Dai, Daohua Wu

引用次数: 0

Exploration of the effect of different terminal acceptors to improve the efficacy of pyrrolopyrazine-based compounds for organic solar cells: a quantum chemical approach 探索不同末端受体对提高吡咯吡嗪基有机太阳能电池化合物效能的影响：量子化学方法

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-20 DOI: 10.1007/s10825-025-02365-8

Saadia Haq, Amaha Ahsan, Aiman Jabbar, Iram Irshad, Muhammad Haroon, Saifullah Bullo, Norah Alhokbany

{"title":"Exploration of the effect of different terminal acceptors to improve the efficacy of pyrrolopyrazine-based compounds for organic solar cells: a quantum chemical approach","authors":"Saadia Haq, Amaha Ahsan, Aiman Jabbar, Iram Irshad, Muhammad Haroon, Saifullah Bullo, Norah Alhokbany","doi":"10.1007/s10825-025-02365-8","DOIUrl":"10.1007/s10825-025-02365-8","url":null,"abstract":"<div>In organic photovoltaic (OPV) cells, the acceptor is one of the most crucial components of the photoactive layer. Herein, pyrrolopyrazine-based non-fullerene compounds (TDCD1–TDCD6) were designed by modifying the reference compound (TDCR) with strongly electron-withdrawing acceptors to improve the performance of organic solar cells (OSCs). The density functional theory (DFT) and time-dependent DFT (TD-DFT) methods were used to perform various analyses which include the frontier molecular orbitals (FMOs), absorption properties (λmax), density of states (DOS), transition density matrix (TDM), hole–electron and open-circuit voltage (Voc). The results of FMOs disclosed that all derivatives showed reduced energy gaps (1.850–2.830 eV) as compared to TDCR (2.933 eV). Similarly, higher absorption values (502.221–787.351 nm) were obtained for derivatives than TDCR (482.050 nm) due to the presence of strong terminal acceptors. Moreover, the calculations such as TDM and DOS confirmed the efficient charge transfer from the HOMO to LUMO. Particularly, the most suitable results were obtained for TDCD4 molecule, i.e., least energy gap (1.850 eV), maximum absorption (787.351 nm) and minimal binding energy (0.275 eV) due to presence of the nitro (–NO2) group in the modified acceptor. In the photovoltaic properties, especially the Voc values were obtained ranging from 1.767 to 2.164 V. Overall, these derivatives are considered suitable materials for the photovoltaic applications.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing near-infrared sensitivity of CMOS image sensors using a hemispherical photon-trapping structure 利用半球形光子捕获结构提高CMOS图像传感器的近红外灵敏度

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-06-20 DOI: 10.1007/s10825-025-02372-9

Mustafa Ozber Yucekul, Mahmud Yusuf Tanrikulu

{"title":"Enhancing near-infrared sensitivity of CMOS image sensors using a hemispherical photon-trapping structure","authors":"Mustafa Ozber Yucekul, Mahmud Yusuf Tanrikulu","doi":"10.1007/s10825-025-02372-9","DOIUrl":"10.1007/s10825-025-02372-9","url":null,"abstract":"<div>CMOS image sensors are extensively utilized in applications ranging from consumer electronics to biomedical imaging and autonomous systems. Despite their high efficiency in the visible spectrum, their sensitivity in the near-infrared (NIR) region remains significantly low due to the limited absorption of silicon beyond 700 nm. To address this challenge, we propose a novel light-trapping strategy incorporating a hemispherical structure at the silicon interface. This design facilitates the direct transmission of normally incident light into the silicon layer while enhancing light scattering and redistribution. Additionally, a pyramidal structure positioned below the silicon layer refracts transmitted light, further improving absorption. To minimize optical crosstalk between adjacent pixels, a deep trench isolation (DTI) structure is implemented. The optical performance of the proposed structure is evaluated through finite-difference time-domain (FDTD) simulations, demonstrating up to a 36% enhancement in optical efficiency at a wavelength of 1100 nm compared to conventional BSI CMOS image sensor designs. These findings highlight the potential of hemispherical photon-trapping strategies for enhancing CMOS image sensor performance in NIR applications such as machine vision and biomedical imaging.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 4","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145144470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0