Journal of Computational Electronics最新文献_第8页

Investigation of a potential photovoltaic absorber based on first principles spectroscopic screening of chalcogenide perovskites: CaZrX3 (X = S, Se) 基于第一性原理光谱筛选硫系钙钛矿CaZrX3 （X = S, Se）的潜在光伏吸收剂研究

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-03 DOI: 10.1007/s10825-024-02245-7

Naincy Pandit, Rashmi Singh, Tarun Kumar Joshi, Akash Shukla, Peeyush Kumar Kamlesh, Anusha Dubey, Tanuj Kumar, Manendra S. Chauhan, Ajay Singh Verma

{"title":"Investigation of a potential photovoltaic absorber based on first principles spectroscopic screening of chalcogenide perovskites: CaZrX3 (X = S, Se)","authors":"Naincy Pandit, Rashmi Singh, Tarun Kumar Joshi, Akash Shukla, Peeyush Kumar Kamlesh, Anusha Dubey, Tanuj Kumar, Manendra S. Chauhan, Ajay Singh Verma","doi":"10.1007/s10825-024-02245-7","DOIUrl":"10.1007/s10825-024-02245-7","url":null,"abstract":"<div><p>Metal chalcogenide perovskites have a number of benefits over lead-halide perovskites, including superior moisture resistance, light-induced degradation together with nontoxic elemental composition, higher absorption, and exceptional carrier transport properties. These materials have orthorhombic phase <i>Pnma</i> and are potential candidate materials to be used as absorber materials in solar cells. In this study, we propose metal chalcogenide perovskites CaZrX<sub>3</sub> (<i>X</i> = S, Se) as a candidate absorber material. Therefore, the investigation of the structural, electrical, optical, thermal, and thermoelectric properties of CaZrX<sub>3</sub>, where <i>X</i> = S, Se, is being carried out using first principles methods. These proposed semiconducting compounds will meet the requirement for stability against volume change. These materials show a direct band gap of 1.812 eV and 1.117 eV at the Γ point. To better understand the optical transitions in the material, the real and imaginary parts of the dielectric function have been calculated. The remarkable absorption coefficient <span>((alpha ))</span> exceeding 10<sup>5</sup> cm<sup>−1</sup> above photon energy exceeding bandgap indicates that the materials are suitable for the visible light absorption. For the estimation of photovoltaic performance of CaZrX<sub>3</sub> (<i>X</i> = S, Se) and to demonstrate the high photo-absorptivity, the spectroscopic-limited maximum efficiency has been calculated. The results show a maximum photovoltaic efficiency of 26.4% and 32.4% for CaZrS<sub>3</sub> and CaZrSe<sub>3</sub> respectively at the thickness <i>L</i> = 100 nm. We have also calculated the thermoelectric coefficients. These perovskites are gaining more attention as a thermoelectric material because of their higher Seebeck coefficient, and ultra-low thermal conductivity.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142762014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Realization of energy efficient GF Xtime multiplier using quantum dot cellular automata (QCA) for AES-MixColumn 利用量子点元胞自动机（QCA）实现AES-MixColumn的高能效GF x时间乘法器

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02248-4

P. Rajasekar, H. Mangalam, K. H. Shakthi Murugan, K. Kalaiselvi

引用次数: 0

Next-generation high-performance complex optical sequential circuits: an electro-optic modulation in GaAlAs directional couplers 下一代高性能复杂光顺序电路：GaAlAs定向耦合器中的电光调制

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02242-w

Ajay Yadav, Amit Prakash, Santosh Kumar, Ajay Kumar

{"title":"Next-generation high-performance complex optical sequential circuits: an electro-optic modulation in GaAlAs directional couplers","authors":"Ajay Yadav, Amit Prakash, Santosh Kumar, Ajay Kumar","doi":"10.1007/s10825-024-02242-w","DOIUrl":"10.1007/s10825-024-02242-w","url":null,"abstract":"<div><p>The concept of optical switching utilizing directional couplers and the electro-optic effect has been leveraged to design various sequential circuits. By applying an appropriate voltage to the core of the couplers, switching of optical pulse signals is achieved through optical tunneling phenomena. This paper presents a comprehensive mathematical analysis of electro-optic effect-based switching, demonstrating its efficacy through 3-D MATLAB simulations of the optical switch layout. A clocked D flip-flop, incorporating an optical delay unit, is examined using 3-D numerical simulations, illustrating the spatial propagation of optical pulses and providing time domain plots for verification. Employing the proposed clocked D flip-flop as a basic module, optically clocked ripple up/down-counters are implemented. Additionally, the design and analysis of an optical 4-bit shift register are discussed, showcasing its ability to effectively shift pulses via 3-D simulations of optical field propagation and time domain plots. This study presents a comprehensive analysis of the extinction ratio, contrast ratio, and amplitude modulation characteristics of the proposed optical code converter circuit. These findings offer an effective methodology for implementing both basic sequential models and complex optical circuits.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Computation of an efficient pipelined fast Fourier transform architecture characterized with real-valued functions 以实值函数为特征的高效流水线快速傅里叶变换体系的计算

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02237-7

Surya Prasad, Arunachalaperumal Chellaperumal

引用次数: 0

Laser interaction with a MIM nanostructure including bowtie aperture and cylindrical holes for plasmonic field enhancement based on strong coupling of LSPR and SPPs 基于LSPR和SPPs强耦合的等离子体场增强激光与包含领结孔和圆柱孔的MIM纳米结构的相互作用

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02258-2

Mohsenifard Atefeh, Mohebbi Masoud

{"title":"Laser interaction with a MIM nanostructure including bowtie aperture and cylindrical holes for plasmonic field enhancement based on strong coupling of LSPR and SPPs","authors":"Mohsenifard Atefeh, Mohebbi Masoud","doi":"10.1007/s10825-024-02258-2","DOIUrl":"10.1007/s10825-024-02258-2","url":null,"abstract":"<div><p>In this paper, a metal–insulator–metal (MIM) array nanostructure consisting of a bowtie aperture and cylindrical holes is proposed as a field amplifier. This hybrid array consists of a grating film made of gold in which some cylindrical holes are replaced with a bowtie aperture, sapphire substrate, and finally a metal film. The array of cylindrical holes acting as a two-dimensional grating can effectively excite propagating surface plasmon polariton modes along a metal film, but the electric field enhancement inside it is relatively weak. On the other hand, the bowtie aperture, with its sharp corners and small gap, can provide a greater intensity enhancement factor within its gap. The combination of these two MIM nanostructures forms a strong coupling between the propagating and localized surface plasmons, leading to an improvement in field confinement in the bowtie aperture in the sub-diffraction limit and its magnitude increase of 115 times. This effective enhancement can be used in plasmonic sensors, lasers, SERS, etc., applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A simple approach for integrating quantum confinement effects into TCAD simulations of tunnel field-effect transistors 一种将量子约束效应集成到隧道场效应晶体管TCAD模拟中的简单方法

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02253-7

Bui Huu Thai, Chun-Hsing Shih, Nguyen Dang Chien

{"title":"A simple approach for integrating quantum confinement effects into TCAD simulations of tunnel field-effect transistors","authors":"Bui Huu Thai, Chun-Hsing Shih, Nguyen Dang Chien","doi":"10.1007/s10825-024-02253-7","DOIUrl":"10.1007/s10825-024-02253-7","url":null,"abstract":"<div><p>Quantum confinement effects (QCEs) are significant in tunnel field-effect transistors (TFETs) since their operation is based on the mechanism of band-to-band tunneling. This study presents a simple approach for integrating QCEs into the semiclassical TCAD simulations of TFETs. The approach was based on a post-processing computation in which 1D Schrodinger equations were first solved manually, then their solutions were used to modify the conduction and valence band profiles in the 2D TCAD simulations. For each bias condition, only a 1D potential profile at the position of the maximum tunneling generation was adopted to describe the QC through the solutions of Schrodinger equations for electrons and holes. The quantum-simulated results based on this simple method show good agreements with both quantum–mechanical simulations based on a sophisticated approach and experimental data. The analyses also show that the van Dort quantum model available in commercial TCAD simulators is not appropriate for describing QCEs in TFETs. The approach can be practically employed in studying the influences of QCEs on the electrical characteristics, in particular the dependence of QCEs on the body thickness of TFET devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum transport properties of a double-barrier quantum well structure based on V-cut edge-patterned armchair graphene nanoribbon 基于v形边型扶手椅石墨烯纳米带的双势垒量子阱结构的量子输运性质

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02264-4

Bikramjit Basumatary, Agile Mathew

引用次数: 0

All-optical photonic crystal logic gates and functions based on threshold logic 基于阈值逻辑的全光光子晶体逻辑门和功能

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02256-4

Arash Firouzimoghaddam, Hojjat Sharifi

引用次数: 0

Design and simulation of the charge layer effect on the Schottky junction characteristics using an ensemble Monte Carlo model 利用系综蒙特卡罗模型设计和模拟电荷层对肖特基结特性的影响

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-11-30 DOI: 10.1007/s10825-024-02249-3

Fatemeh Haddadan, Mohammad Soroosh, Ramakrishnan Rajasekar

引用次数: 0

An efficient multispectral CsSnI3 MSM photodetector using back grooves and light trapping optimization: FDTD-GA calculations 利用背沟槽和光捕获优化技术的高效多光谱铯硒碘3 MSM 光电探测器：FDTD-GA 计算

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-11-28 DOI: 10.1007/s10825-024-02251-9

H. Ferhati, F. Djeffal

{"title":"An efficient multispectral CsSnI3 MSM photodetector using back grooves and light trapping optimization: FDTD-GA calculations","authors":"H. Ferhati, F. Djeffal","doi":"10.1007/s10825-024-02251-9","DOIUrl":"10.1007/s10825-024-02251-9","url":null,"abstract":"<div><p>The present work aims at developing a new design strategy based on optimizing light trapping management in the CsSnI<sub><i>3</i></sub> perovskite active layer using back groove engineering, to tune the broadband photoresponsivity. To do so, an extensive numerical simulations based on 2D-Finite Difference Time Domain (FDTD)-SILVACO calculations are carried out to assess the optoelectronic properties of the proposed sensor, including the impact of back grooves engineering. The effect of the groove geometry on the photosensing characteristics of the photodetector (PD) is analyzed. It is found that the depth, width and the period of the back grooves can modulate the optical behavior of the CsSnI<sub><i>3</i></sub> perovskite active layer, showing a great potential for improving the light harvesting capabilities over a wide spectral range. A Genetic Algorithm Optimization (GAO) technique is implemented to find out the best groove geometry and period, offering the highest photoresponse over UV to NIR spectral bands. The obtained results show the ability of the proposed strategy to improve and tune the optoelectronic properties of the device, demonstrating a high responsivity of 78 mA/W and an improved I<sub>ON</sub>/I<sub>OFF</sub> ratio of 61 dB. Therefore, the proposed approach can open new paths to enhance the optical and electrical performances of thin film perovskite photodetectors by optimizing the light trapping management using back groove engineering and metaheuristic calculations.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0