Journal of Computational Electronics最新文献_第8页

Low-profile MIMO antenna for sub-6G smartphone applications with minimal footprint: an SVM-guided approach 用于 6G 以下智能手机应用、占用空间最小的低剖面 MIMO 天线：SVM 引导方法

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-10-11 DOI: 10.1007/s10825-024-02236-8

Devisowjanya Potti, Sakthi Abirami Balakrishnan, Vijaiya Kesavan Kesavan Murugesan, Soundar Rajan Gomathinayagam

{"title":"Low-profile MIMO antenna for sub-6G smartphone applications with minimal footprint: an SVM-guided approach","authors":"Devisowjanya Potti, Sakthi Abirami Balakrishnan, Vijaiya Kesavan Kesavan Murugesan, Soundar Rajan Gomathinayagam","doi":"10.1007/s10825-024-02236-8","DOIUrl":"10.1007/s10825-024-02236-8","url":null,"abstract":"<div>This paper investigates the performance of a low-profile 8 × 8 multi-input-multi-output (MIMO) antenna with zero ground clearance, designed using an intelligent antenna recommender system. A dissimilar antenna pair is employed to achieve multi-band resonance and enhance isolation for sub-6G mobile communication. The primary antenna is a loop antenna resonating at n77, n79, and n46 bands, designed with the aid of a model developed using a support vector machine (SVM). The auxiliary antenna is a modified monopole resonating at n78 and n79 bands to minimize the antenna footprint on mobile devices. An eight-antenna MIMO array is fabricated, and measured results demonstrate that the proposed antenna has a reflection coefficient of less than − 10 dB at 3.5, 3.7, 4.5, and 5.2 GHz, with diversity gain and isolation greater than 9 dBi and 15 dB, respectively. SAR analysis conducted on a human head model shows a maximum SAR value of less than 1.6 W/kg at all sub-6G bands, compliant with FCC standards. The proposed MIMO antenna offers a viable solution, even when integrated with a battery and display, without occupying internal space within a mobile phone.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1402 - 1412"},"PeriodicalIF":2.2,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142598827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of in-plane electric field on the optical properties of CO2 adsorbed 2D MoSe2 monolayer: application as a photodetector 面内电场对二氧化碳吸附二维 MoSe2 单层光学特性的影响：作为光探测器的应用

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-30 DOI: 10.1007/s10825-024-02233-x

S. N. Jaiswal, Bramha P. Pandey

{"title":"Impact of in-plane electric field on the optical properties of CO2 adsorbed 2D MoSe2 monolayer: application as a photodetector","authors":"S. N. Jaiswal, Bramha P. Pandey","doi":"10.1007/s10825-024-02233-x","DOIUrl":"10.1007/s10825-024-02233-x","url":null,"abstract":"<div>We present the results of an investigation of the optical characteristics of pristine and CO2-adsorbed MoSe2 monolayers with (without) an external electric field. The optical parameters of interest are the absorption coefficient (α), reflectance (Rf), refractive index (n), and photoconductivity (σ). The impact of an external electric field (−2 × 108 V/cm) on the optical behavior of the MoSe2 monolayer is systematically investigated. The results show the peaks of the real component ((varepsilon_{1})) of the dielectric function for both pristine and CO2-adsorbed MoSe2 monolayers in the energy range of 2–3 eV. The imaginary part ((varepsilon_{2})) of the dielectric function exhibits a shift toward the visible region from the ultraviolet (UV) region, in which CO2 is adsorbed, and this shift increases toward the visible region with the application of an external electric field. Analysis of the absorption index, refractive index, and reflectance reveals that the peaks are aligned in the visible range for both the pristine MoSe2 and CO2-adsorbed MoSe2 monolayers, with (without) an external electric field. The shifts of these peaks follow a similar trend as the imaginary part of the dielectric constant. Lastly, this study provides additional insight into the photo-detection performance parameters (internal quantum efficiency [IQE], external quantum efficiency [EQE], light extraction efficiency [LEE], and responsivity) for both pristine and CO2-adsorbed MoSe2 monolayers, considering the presence or absence of an external field.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1325 - 1336"},"PeriodicalIF":2.2,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142598928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Empirical mathematical model based on optimized parameter extraction from captured electrohydrodynamic inkjet memristor device with LTspice model 基于 LTspice 模型从捕获的电流体动力喷墨记忆晶体管器件中提取优化参数的经验数学模型

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-27 DOI: 10.1007/s10825-024-02223-z

Eman Omar, Hesham H. Aly, Ola E. Hassan, Mostafa Fedawy

{"title":"Empirical mathematical model based on optimized parameter extraction from captured electrohydrodynamic inkjet memristor device with LTspice model","authors":"Eman Omar, Hesham H. Aly, Ola E. Hassan, Mostafa Fedawy","doi":"10.1007/s10825-024-02223-z","DOIUrl":"10.1007/s10825-024-02223-z","url":null,"abstract":"<div>This research presents a simulating electrohydrodynamically (EHD) inkjet-printed memristors in LTspice environment, a popular tool for analog circuit simulation. EHD printing technique is used as one of low cost fabrication technique for fabricate flexible thin films and memristors with high precision and resolution in a scale of nanometers. Memristors are cutting-edge components for AI hardware, and they can be fabricated through various methods, including traditional semiconductor processes and printed electronics techniques. However, printed electronics fabrication based for memristor modeling accurately remains a challenge. This paper introduces a mathematical model specifically for (EHD) inkjet-printed memristors, employing empirical mathematics to ensure compatibility with LTspice. While the modeling of printed electronic devices still in the early stage—to the knowledge of the authors-this paper will discuss for the first time mathematical and Spice modeling for printed memristor. The model is validated against actual memristors with a sandwiched structure ((text {Ag/ZrO}_{2}/text {Ag})), showing acceptable error percentage. It involves modifying an existing memristor model by incorporating a function that reflects the characteristics of the EHD printing process. This function is designed to capture the impact of the printing technique on various device parameters, such as width and length, with a focus on accurately modeling the width in the LTspice environment. This paper presents a developed LTspice model based on the proposed empirical mathematical model. The results are based on different sizes: 40 nm, 120 nm, 680 nm, respectively.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1455 - 1472"},"PeriodicalIF":2.2,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142598878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Gated-anode diodes for RF and microwave rectifiers for WPT applications: a simulation study on DC and RF characteristics 用于 WPT 应用的射频和微波整流器的门控阳极二极管：直流和射频特性模拟研究

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-23 DOI: 10.1007/s10825-024-02226-w

Debaleen Biswas, Arijit Bose, Hidemasa Takahashi, Yuji Ando, Akio Wakejima

{"title":"Gated-anode diodes for RF and microwave rectifiers for WPT applications: a simulation study on DC and RF characteristics","authors":"Debaleen Biswas, Arijit Bose, Hidemasa Takahashi, Yuji Ando, Akio Wakejima","doi":"10.1007/s10825-024-02226-w","DOIUrl":"10.1007/s10825-024-02226-w","url":null,"abstract":"<div>AlGaN/GaN HEMT-based gated-anode diode (GAD) has been investigated with a physics-based TCAD simulation tool to understand its electrical transport characteristics. The simulation study predicted that the GAD exhibited low turn-on voltage ((V_{text {on}}) = + 0.77 V) over a conventional Schottky barrier diode (SBD). However, the GAD suffers from low breakdown voltage ((V_{text {BD}})) because of strong electric field crowding at the gate edge. On the other hand, a δ-doped GaN cap (δ-DGC) layer has been able to spread out the electric field along the channel. With such modification in the epi-structure, a (V_{text {BD}}) of ~ 335 V could be achieved with the gated-anode-to-cathode distance ((L_{text {gac}})) of 10 μm. TCAD-based RF simulation and small-signal S-parameter analysis were carried out to evaluate the expected RF performance of the GADs. From the transient response of the extracted small-signal equivalent circuit parameters, the cut-off frequency ((f_{text {c}})) of the GADs with δ-DGC layer was 35.6 GHz at the exact turn-on condition ((V_{text {on}})) of the device.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1368 - 1379"},"PeriodicalIF":2.2,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142598852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characteristic analysis of a line-touch mode capacitive pressure-sensitive structure 线触模式电容式压敏结构的特性分析

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-21 DOI: 10.1007/s10825-024-02234-w

Rongyan Chuai, Jianxing Wang, Xin Li, He Zhang, Zhihao Zhang

引用次数: 0

Modeling to study the shape, dimensionality and crystal structure dependence of energy band gap in nanosized semiconductors 建模研究纳米级半导体能带隙的形状、尺寸和晶体结构相关性

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-15 DOI: 10.1007/s10825-024-02229-7

Monika Goyal

{"title":"Modeling to study the shape, dimensionality and crystal structure dependence of energy band gap in nanosized semiconductors","authors":"Monika Goyal","doi":"10.1007/s10825-024-02229-7","DOIUrl":"10.1007/s10825-024-02229-7","url":null,"abstract":"<div>In the present paper, a simple qualitative model is proposed to study the effect of dimension and crystal structure on the energy band gap of semiconducting nanomaterials. The energy band gap variation is studied for nanoparticles, nanowires and thin films. The model takes into account the crystal structure and to incorporate the effect of crystal structure on energy band gap, lattice packing fraction is included in the mathematical formulation. The model does not involve any approximation or adjustable parameter. The study on nanosized semiconductors is performed. The model results depict the increase in the energy bandgap of nanosized semiconductors with reduction in size to nanoscale. Based on dimensionality, increment in energy band gap of spherical nanoparticles (NP’s) is more than that in cylindrical nanowires (NW’s) and thin films. The model results are found in good agreement with compared experimental and stimulated data. Drastic increase in energy band gap in nano-semiconductor of diameter or height less than 10 nm is due to the quantum confinement of charge carriers with increase in the surface area/volume ratio. With reduction in size of the Nano semiconductor, increase in the Band gap is observed leading to the blue shift. The energy band gap dependence on size in the nanorange has opened the possibility of tuning the energy band gap of the nanomaterials and use them in the opto-electronic devices.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1284 - 1291"},"PeriodicalIF":2.2,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analyzing the operational versatility of advanced IBC solar cells at different temperatures and also with variation in minority carrier lifetimes 分析先进 IBC 太阳能电池在不同温度下的多功能性以及少数载流子寿命的变化情况

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-14 DOI: 10.1007/s10825-024-02232-y

Shiladitya Acharyya, Dibyendu Kumar Ghosh, Dipali Banerjee, Santanu Maity

{"title":"Analyzing the operational versatility of advanced IBC solar cells at different temperatures and also with variation in minority carrier lifetimes","authors":"Shiladitya Acharyya, Dibyendu Kumar Ghosh, Dipali Banerjee, Santanu Maity","doi":"10.1007/s10825-024-02232-y","DOIUrl":"10.1007/s10825-024-02232-y","url":null,"abstract":"<div>In this work, doped and dopant-free carrier-selective passivating contacts have been incorporated in Interdigitated Back Contact solar cells. TCAD simulation study was done to check the performance of an IBC-SHJ (Silicon Hetero-Junction) and IBC-POLO (POLy-silicon on Oxide as seen in TOPCon) cell structures for both p and n-type wafers. The IBC-POLO structure was also repeated with HfO2 and ZrO2 over electron transport and hole transport layers, respectively. Simulation study was done by replacing the doped silicon layers with dopant-free Transition Metal Oxides (TMOs). NiO was used as a dopant-free hole-selective contact, whereas Nb2O5 was used a dopant-free electron-selective contact. The fabrication of these materials is non-hazardous and at low temperatures due to which they are preferable over the doped Si layers that require toxic gases like phosphine, diborane, etc. and may also require high temperatures. For example, poly-Si layer applied in IBC-POLO requires an annealing temperature of over 800 °C; similarly, the diffusion of Front Surface Field (FSF) layer in normal IBC cells also requires the same high temperature. Temperature variation was done on these structures to check the dependence of solar PV parameters of each IBC structure on different temperatures. Same variation was checked with minority carrier lifetime of the silicon wafer.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1170 - 1194"},"PeriodicalIF":2.2,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Chaotic computing cell based on nanostructured phase-change materials 基于纳米结构相变材料的混沌计算单元

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-13 DOI: 10.1007/s10825-024-02221-1

A. A. Nevzorov, A. A. Burtsev, A. V. Kiselev, V. A. Mikhalevsky, V. V. Ionin, N. N. Eliseev, A. A. Lotin

引用次数: 0

Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature 二维电子气体的顺磁特性取决于浓度和温度

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-11 DOI: 10.1007/s10825-024-02231-z

P. J. Baymatov, B. T. Abdulazizov, O. M. Yunusov, Kh. N. Juraev, A. A. Saydaliev

引用次数: 0

Simulations of RF wave-induced modulation of filament growth and bipolar resistive switching in conductive bridging RAM 导电桥接 RAM 中射频波诱导的灯丝生长调制和双极电阻开关模拟

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-10 DOI: 10.1007/s10825-024-02228-8

Yifei Yin, Toshihiro Nakaoka

{"title":"Simulations of RF wave-induced modulation of filament growth and bipolar resistive switching in conductive bridging RAM","authors":"Yifei Yin, Toshihiro Nakaoka","doi":"10.1007/s10825-024-02228-8","DOIUrl":"10.1007/s10825-024-02228-8","url":null,"abstract":"<div>We have simulated Ag–Ge–Te-based conductive bridge RAM (CBRAM) under RF electromagnetic wave input to investigate the RF effects on heat transfer and electrochemical reaction. The RF simulations agreed with the experimental transmission coefficient S21 between 0.4 and 1 GHz, indicating an effective, uniform electric field applied in the RF-applicable CBRAMs. The heat transfer simulations showed a minimal temperature increase of about 1 K under the RF wave at 10 MHz and 10 dBm, indicating negligible thermal effects. The electrochemical simulations were based on the Nernst–Planck equation, taking into account the Ag ion transport in the Ag–GeTe electrolyte by diffusion and migration. Electrode kinetics were calculated for charge transfer reactions using the Butler–Volmer equation. The cathode electrode moved at a velocity equal to the rate of Ag electrodeposition on the cathode. The electrode movement represented filament growth. The electrochemical simulations successfully reproduced filament growth, bipolar resistive switching, experimental currents, and SET/RESET voltages. In addition, the electrochemical simulations under RF waves showed a decrease in the magnitude of SET and RESET voltages, consistent with experimental observations. The RF-induced SET/RESET voltage modulation was attributed to redox reactions that changed the average ion concentration during RF cycles, accelerating filament growth and dissolution.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1380 - 1390"},"PeriodicalIF":2.2,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-024-02228-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0