Journal of Computational Electronics最新文献

{"title":"Transit time induced negative differential resistance in a planar vacuum microdiode for THz generation","authors":"S. Rekhviashvili","doi":"10.1007/s10825-026-02588-3","DOIUrl":"10.1007/s10825-026-02588-3","url":null,"abstract":"<div><p>An analytical model of electron transport in a planar vacuum microdiode is developed to describe transit-time instabilities arising from self-consistent space-charge feedback. The model leads to a delay-differential equation for the electron velocity that captures the coupling between the electron transit time and plasma oscillations in the gap. Analytical expressions for the small-signal impedance and the conditions for negative differential resistance are obtained. The analysis identifies discrete frequency bands where the real part of the impedance becomes negative, enabling self-sustained oscillations. The oscillation frequency is governed by the electron transit time and plasma frequency, naturally scaling into the terahertz range for micron-scale gaps. An explicit expression for the emitted power is derived by treating the modulated current as a short dipole radiator. The proposed framework provides a compact analytical description of transport-driven instabilities in vacuum micro- and nanoelectronic devices and offers guidelines for THz source design.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148261770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MXene-graphene hybrid multi-resonator terahertz metasurface biosensor for potential non-invasive glucose monitoring: a computational design and proof-of-concept study","authors":"Hussein A. Elsayed,&nbsp;Emad Solouma,&nbsp;Jacob Wekalao,&nbsp;Ahmed Mehaney,&nbsp;Mohammed Messaoudi,&nbsp;Amuthakkannan Rajakannu,&nbsp;Pelluce Kabarokole","doi":"10.1007/s10825-026-02566-9","DOIUrl":"10.1007/s10825-026-02566-9","url":null,"abstract":"<div><p>This work presents the computational design, numerical optimization, and machine learning-assisted performance evaluation of a multi-resonator terahertz (THz) metasurface biosensor intended for potential non-invasive glucose monitoring applications. Numerical simulations using COMSOL Multiphysics reveal that the sensor achieves a high sensitivity of 1000 GHz/RIU across a refractive index range of 1.335–1.347 RIU, with a quality factor exceeding 14 and figure of merit reaching 20 RIU⁻¹. The design's versatility is demonstrated through parametric studies analysing the effects of graphene chemical potential, incident angle, and resonator dimensions on transmission spectra. For glucose detection applications, the sensor exhibits systematic frequency shifts from 0.719 THz to 0.714 THz corresponding to varying glucose concentrations, with a total tuning range of 30 GHz. One-dimensional convolutional neural networks further optimize detection accuracy, achieving up to 93% predictive effectiveness.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148281535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Small-amplitude square-modulated light intensity techniques for dye-sensitized solar cells: invoking the frequency dependence","authors":"Mahmoud Hezam,&nbsp;Hamid Ghaithan,&nbsp;Mohammad Alduraibi,&nbsp;Ahmed Alkaoud,&nbsp;Abdullah Aldwayyan","doi":"10.1007/s10825-026-02581-w","DOIUrl":"10.1007/s10825-026-02581-w","url":null,"abstract":"<div><p>Small-amplitude square-modulated light intensity techniques have been well known for the measurements of electron lifetime and electron diffusion time in dye-sensitized solar cells (DSSCs). The measurements are typically taken in the time domain, followed by exponential fitting of the resulting photovoltage/photocurrent decay. Alternatively, sinusoidally modulated light intensity techniques use frequency-domain measurements for the same purpose, which are traditionally known as intensity-modulated photovoltage spectroscopy (IMVS) and intensity-modulated photocurrent spectroscopy (IMPS), respectively, for the measurement of electron lifetime and electron diffusion time. In this work, we invoke the possibility of using square-modulated light intensity in the frequency domain. We show that invoking the frequency dependence of square modulation provides a viable alternative to IMVS/IMPS, with which electron time constants can be rapidly determined. We show good agreement between electron time constants obtained by our square-modulated technique and those obtained from IMVS/IMPS. A method to estimate the error associated with the technique is also presented, yielding a conservative upper bound of <span>(Delta tau = tau /4)</span> for the extracted time constants.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148281463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing the stability and optical performance of Si/SiO2 one-dimensional photonic crystals for high-temperature thermophotovoltaic applications","authors":"Asmaa N. Salih,&nbsp;Hayder M. Neamah,&nbsp;Doaa H. Hameed,&nbsp;Jamal N. Jabir","doi":"10.1007/s10825-026-02573-w","DOIUrl":"10.1007/s10825-026-02573-w","url":null,"abstract":"<div><p>This study aims to examine the potential of Si/SiO₂-based one-dimensional photonic crystals (1D-PhCs), which can be considered as advanced and alternative materials to traditional Si/SiO₂ multilayer structures for thermophotovoltaic (TPV) applications. This work will particularly emphasize the improvement of the thermal stability and optical properties of the Si/SiO₂-PhCs under high-temperature operating conditions. Using the transfer matrix method (TMM), the optical properties of the Si/SiO₂-PhCs will be analyzed, and the reflective properties of the Si/SiO₂-PhCs in the visible and infrared regions will be particularly emphasized. The results show that Si/SiO₂-PhCs have better thermal stability and optical properties compared to conventional Si/SiO₂ multilayer structures.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148281464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Deep learning-based prediction of line edge roughness-induced variability in dual-gate FinFETs","authors":"P. Deborah Roseline,&nbsp;V. P. Kavitha","doi":"10.1007/s10825-026-02578-5","DOIUrl":"10.1007/s10825-026-02578-5","url":null,"abstract":"<div><p>The continuous scaling of semiconductor devices into the sub-5-nm regime has intensified the influence of Line Edge Roughness (LER) on the electrical characteristics and reliability of Dual-Gate FinFETs, particularly when integrated with high-k gate dielectric materials. LER presents random variations in the fin geometry and gate structure which cause major variations in the key measures of performance like Static Noise Margin (SNM), Threshold Voltage (VTC), and current drivability. Although it is correct, conventional Technology Computer-Aided Design (TCAD) simulations are computationally expensive and cannot be used to model statistical variation on a large scale. To deal with this challenge, the Shallow Quaternion Reverse Generative Artificial Protozoa Adversarial Attention Networks (SQRA-P2AN) model is suggested, which is a combination of Quaternion Generative Adversarial Networks (QGAN) and a Shallow and Reverse Attention Network (SRAN). The Artificial Protozoa Optimizer (APO) is used to optimize the network parameters to enhance the rate of convergence and reduce the prediction error. The hybrid deep-learning framework is an efficient way of representing nonlinear associations between LER parameters and variation of FinFET performance, and it gives better predictive power than traditional models. The prediction results and accuracy assessment of the hybrid SQRA-P2AN model and TCAD simulation indicate that the model is highly consistent with the WMAPE value of 0.38–0.86, RSNM value of 149.05–150.12 mV, and WSNM value of 293.65–296.43 mV, as the proposed model is measured using the same parameters of LER (0.2–0.7 nm, 20–90 nm, 2) The SQRA-P2AN model decreases the average error in prediction by about 32 percent compared to the results of TCAD, and it also increases the stability of the voltage prediction by 28 percent and decreases the overall time of computation by almost 35 percent.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148237308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling and analysis of photonic logical processing unit using configurable photonic switch","authors":"Veerasamy B.,&nbsp;Vinoth Raj R.,&nbsp;Manikandan S. P.,&nbsp;Poovannan E.","doi":"10.1007/s10825-026-02575-8","DOIUrl":"10.1007/s10825-026-02575-8","url":null,"abstract":"<div><p>Digital photonic processing has received significant attention today. In this work, we have designed and numerically simulated a photonic logical processing unit (PLPU) using silicon on insulator (SOI)-based configurable photonic switch (CPS). The performance of the proposed PLPU has been analyzed and investigated using time- and frequency-domain modeling (TFDM) with MATLAB. The analysis includes the design of configurable photonic switch, photonic logic gates, adders, subtractor, encoder, decoder, multiplexer, demultiplexer, and a comparator. It is expected that such designs have the potential to be the key components for future reconfigurable digital photonic integrated circuits due to their scalability and re-usability.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148173158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation-driven design optimization of ZnO nanorod window layers for enhanced P3HT:PCBM organic solar cells","authors":"Suvindraj Rajamanickam,&nbsp;Khalid Hassan Ibnaouf,&nbsp;Bashayr Alanazi,&nbsp;Naser M. Ahmed","doi":"10.1007/s10825-026-02579-4","DOIUrl":"10.1007/s10825-026-02579-4","url":null,"abstract":"<div><p>This work presents a simulation-driven design methodology to establish the optimal structure–property relationship for ZnO nanorod window layers in P3HT:PCBM organic photovoltaic (PV) devices. Systematic optoelectrical modelling was utilized to address a critical materials’ design gap in nanostructured window layer optimization. Optical analysis identified the ideal functional geometry as a high-pitch (400 nm), 150 nm tall cylindrical nanorod array. This specific nanostructure demonstrates superior light management by utilizing continuous curvature to minimize back-scattering, which is shown to be superior to square geometries. Electrical simulations on the optimized nanorod device reveal a substantial enhancement in functional performance compared to a planar control. Specifically, the short-circuit current density J_SC increased by 62% (from 10.84 to 17.64 mA cm⁻²) and the power conversion efficiency PCE was increased from 2.57% to 4.22%. These results provide practical structural guidelines for the experimental implementation of high-efficiency functional nanomaterials in next-generation photovoltaics.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148173118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and realization of a plasmonic combinational logic circuits at 1.55 µm","authors":"Zaid Saad Al-Sabea,&nbsp;Saif Hasan Abdulnabi,&nbsp;Ali Kadhim Al-Janabi,&nbsp;Salam A. W. Al-abassi,&nbsp;Rusul Saad Alsabea","doi":"10.1007/s10825-026-02580-x","DOIUrl":"10.1007/s10825-026-02580-x","url":null,"abstract":"<div><p>This paper presents a design for realizing combinational logic circuits, including a Full-Subtractor, Full-Adder, Half-Subtractor, Half-Adder, 2 × 1 Multiplexer, 1 × 2 Demultiplexer, and a One-Bit Comparator. The proposed design consists of two sub-structures, each featuring four strips surrounding a single nanoring Operates on the principle of resonance; these sub-structures are isolated by a 50 nm wide graphene layer that acts as perfect mirror for efficient seclusion. 1550 nm is the wavelength at which the proposed design operates utilizing insulator-metal-insulator (IMI) plasmonic waveguide. The fundamental concept of these circuits’ functioning is control and input signals’ destructive and constructive intervention. Between OFF–ON states there is transmission threshold and its value is (0.25). The proposed design has dimensions (300 nm × 650 nm) fulfilling seven logic combinational circuits with highest transmission 221.1% at Full-Adder, Full-Subtractor, One-Bit Comparator and 2 × 1 Multiplexer where the design is excellent and optimum design in all circuits except Half-Subtractor, and there is a high value of modulation depth in six circuits because it’s extents more than 90%. The proposed structure participates to constructing optical signal processing nanocircuits and integrated photonic circuits.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148173072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First-principles insights into LiXYSn (X = La, Lu; Y = Ni, Pd) compounds: promising narrow band gap semiconductors","authors":"Maria Kanwal,&nbsp;Nahida Kousar,&nbsp;Farah Andleeb,&nbsp;Sadia Malik,&nbsp;Salah Knani,&nbsp;Fareeha Fatima,&nbsp;Muhammad Nasir Rasul","doi":"10.1007/s10825-026-02571-y","DOIUrl":"10.1007/s10825-026-02571-y","url":null,"abstract":"<div><p>Quaternary compounds have gained significant interest as versatile materials for thermoelectric, catalytic, and optoelectronic applications. In this study LiXYSn (X = La, Lu; Y = Ni, Pd) compounds are investigated for their structural, phononic, optoelectronic and mechanical attributes using DFT-based VASP computations with GGA and mBJ as exchange–correlational potential. The compounds are thermodynamically stable in F<span>(overline{4 })</span>3m space group with lattice constants 6.808, 6.471, 6.985, and 6.664 Å for LiLaNiSn, LiLuNiSn, LiLaPdSn and LiLuPdSn respectively. All four compounds are mechanically robust and dynamically stable, showing no imaginary phonon modes. Phonon splitting is specifically examined through the inclusion of non-analytic corrections (NAC). Furthermore, the phonon angular momentum (PHAM) analysis reveals that PHAM originates from circular and elliptical atomic vibrations in optical modes near high-symmetry points (X, L, W), while acoustic modes near Γ contribute minimally. The distinct <span>({J}_{x}/hslash)</span>, <span>({J}_{y}/hslash)</span> and <span>({J}_{z}/hslash)</span> PHAM components underscore the strong coupling between lattice vibrations and rotational motion across the Brillouin zone. This highlights the dynamic interplay between lattice vibrations and angular momentum offering potential for optomechanical and thermal control applications. The electronic properties reveal narrow indirect band gaps of 0.3288 (0.6133), 0.2456 (0.473), 0.2087 (0.2738) and 0.2319 (0.3779) <span>(text{e}text{V})</span> using GGA (mBJ) for LiLaNiSn, LiLuNiSn, LiLaPdSn and LiLuPdSn respectively. The –COHP analysis indicates that Ni-X pair exhibits the strongest bonding interactions, contributing to the structural stability. Moreover, the optoelectronic properties indicate strong potential for infrared to visible light driven applications. The mechanical characteristics along with anisotropic behavior have also been thoroughly examined in 2D and 3D crystallographic planes.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148173119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photonic crystal architecture for all-optical approximate computing: A low-power full adder using threshold–majority gate","authors":"Arash Firouzimoghaddam,&nbsp;Hatam Abdoli,&nbsp;Saeid Seyedi","doi":"10.1007/s10825-026-02574-9","DOIUrl":"10.1007/s10825-026-02574-9","url":null,"abstract":"<div><p>The exploration of all-optical arithmetic circuits is an important task in the development of ultrafast and low-power computing architectures. Most of the adders built using photonic crystals (PhC), however, suffer from high power consumption or complex device configurations that prevent them from being integrated into scalable optical systems. In this paper, we report on the design of a novel PhC structure featuring a compact, threshold–majority logic-based all-optical approximate full adder that pursues low-power operation. The structure supports a triangular lattice arrangement of silicon (Si) rods in air with Kerr nonlinearities introduced using silicon nanocrystals (Si-nc). A cascaded circuit of two three-input majority cells was realized using nonlinear directional couplers. The threshold operation control is achieved by tuning the radius of certain rods. We analyzed the photonic band structure (PBS) and the optical response of our design around 1550 nm using the plane wave expansion (PWE) and two-dimensional finite-difference time-domain (FDTD) methods, respectively. Simulation results revealed that the maximum value of input power at which the operation is stable is 2.5 W, where clear switching behavior is observed. Taking the operating power and the structural complexity of the adder as a figure of merit, the proposed work exhibits lower operational power and reduced structural complexity with reliable performance for moderate process variations compared to most of the previously reported PhC adders. Overall, these findings indicate the potential of threshold–majority logic in implementing compact, low-power, and scalable all-optical arithmetic circuits, which would be demanded toward pursuing efficient photonic computing with integrated photonic crystal platforms.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2026-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148172262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}