Optical properties and its atomistic doping manipulation of two-dimensional Janus MoSTe photodetectors

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Yange Peng, Xiuwen Wu, Gen Li, Jiansheng Dong, Hairui Bao, Wenhu Liao
{"title":"Optical properties and its atomistic doping manipulation of two-dimensional Janus MoSTe photodetectors","authors":"Yange Peng,&nbsp;Xiuwen Wu,&nbsp;Gen Li,&nbsp;Jiansheng Dong,&nbsp;Hairui Bao,&nbsp;Wenhu Liao","doi":"10.1007/s10825-024-02269-z","DOIUrl":null,"url":null,"abstract":"<div><p>The optical properties of two-dimensional (2D) Janus MoSTe photodetectors under irradiation of polarized light have attracted tremendous attention recently due to their potential applications in low power consumption nanoelectronics and optoelectronics. By using the nonequilibrium Green's function method combined with density functional theory, we theoretically investigate the optical properties of various substitution-doped Janus MoSTe photodetectors. It has been demonstrated that the photocurrents along the armchair direction for all built devices exhibit a cosine-function-like behavior, and those along the zigzag direction present a sine-function-like relationship with the polarization angle <i>θ</i> under irradiation of linearly polarized light. The maximum photocurrents are in range from 3.06 <span>\\({\\text{a}}_{0}^{2}/\\text{photon}\\)</span> to 16.82 <span>\\({\\text{a}}_{0}^{2}/\\text{photon}\\)</span> among As substituted Mo, W substituted Mo, S substituted Te, Te substituted S, and Se substituted S of the Janus MoSTe photodetectors, apparently larger than the photocurrent of 0.61 <span>\\({\\text{a}}_{0}^{2}/\\text{photon}\\)</span> for pure MoSTe photodetector, since the atomistic doping significantly reduce the structural symmetry of the photodetectors. Interestingly, a maximum extinction ratio of 4.26 × 10<sup>2</sup> has been observed in Janus MoSTe photodetectors with W substituted by Mo atom, implying the ultrahigh polarization sensitivity of the Janus MoSTe photodetectors. In addition, an obvious anisotropy between the armchair and zigzag directions of system has been observed, since the generated photocurrent along the armchair direction is much larger than that along the zigzag direction. Therefore, the 2D Janus MoSTe monolayer should be a good candidate material for future nanoelectronic and optoelectronic applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2024-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02269-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The optical properties of two-dimensional (2D) Janus MoSTe photodetectors under irradiation of polarized light have attracted tremendous attention recently due to their potential applications in low power consumption nanoelectronics and optoelectronics. By using the nonequilibrium Green's function method combined with density functional theory, we theoretically investigate the optical properties of various substitution-doped Janus MoSTe photodetectors. It has been demonstrated that the photocurrents along the armchair direction for all built devices exhibit a cosine-function-like behavior, and those along the zigzag direction present a sine-function-like relationship with the polarization angle θ under irradiation of linearly polarized light. The maximum photocurrents are in range from 3.06 \({\text{a}}_{0}^{2}/\text{photon}\) to 16.82 \({\text{a}}_{0}^{2}/\text{photon}\) among As substituted Mo, W substituted Mo, S substituted Te, Te substituted S, and Se substituted S of the Janus MoSTe photodetectors, apparently larger than the photocurrent of 0.61 \({\text{a}}_{0}^{2}/\text{photon}\) for pure MoSTe photodetector, since the atomistic doping significantly reduce the structural symmetry of the photodetectors. Interestingly, a maximum extinction ratio of 4.26 × 102 has been observed in Janus MoSTe photodetectors with W substituted by Mo atom, implying the ultrahigh polarization sensitivity of the Janus MoSTe photodetectors. In addition, an obvious anisotropy between the armchair and zigzag directions of system has been observed, since the generated photocurrent along the armchair direction is much larger than that along the zigzag direction. Therefore, the 2D Janus MoSTe monolayer should be a good candidate material for future nanoelectronic and optoelectronic applications.

二维Janus MoSTe光电探测器的光学性质及其原子掺杂操纵
二维Janus MoSTe光电探测器在偏振光照射下的光学特性由于其在低功耗纳米电子学和光电子学方面的潜在应用而引起了人们的广泛关注。利用非平衡格林函数方法结合密度泛函理论,从理论上研究了各种掺杂取代的Janus MoSTe光电探测器的光学性质。结果表明,在线偏振光照射下,所有器件沿扶手椅方向的光电流均表现出类似余弦函数的特性,而沿之字形方向的光电流则与极化角θ呈类似正弦函数的特性。As取代Mo、W取代Mo、S取代Te、Te取代S和Se取代S的Janus MoSTe光电探测器的最大光电流范围为3.06 \({\text{a}}_{0}^{2}/\text{photon}\) ~ 16.82 \({\text{a}}_{0}^{2}/\text{photon}\),明显大于纯MoSTe光电探测器的光电流0.61 \({\text{a}}_{0}^{2}/\text{photon}\),这是由于原子掺杂显著降低了光电探测器的结构对称性。有趣的是,当Mo原子取代W原子时,Janus MoSTe光电探测器的最大消光比为4.26 × 102,这表明Janus MoSTe光电探测器具有超高的偏振灵敏度。另外,系统的扶手椅方向与之字形方向存在明显的各向异性,扶手椅方向产生的光电流远大于之字形方向产生的光电流。因此,二维Janus MoSTe单层材料应该是未来纳米电子和光电子应用的良好候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信