Novel junctionless GAA negative capacitance FET based on gate engineering aspects: analytical modeling and performance assessment

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Ibrahim Rahmani, Zohir Dibi, Hichem Farhati, Faycal Djeffal
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Abstract

We present a new subthreshold analytical model for dual-material junctionless gate-all-around negative capacitance field-effect transistors (DM JL GAA NCFETs). The model accurately reproduces the electrostatic potential distribution, subthreshold current characteristics of the device, threshold voltage, and subthreshold slope. By solving the Landau–Khalatnikov (L–K) equation with Poisson’s equation, the model provides a precise analytical solution that aligns closely with numerical results. The impact of various parameters such as channel length, DM gate ratio, and ferroelectric layer thickness on the device subthreshold behavior is systematically analyzed. It is found that the strategic combination between the JL structure and NC effect can allow achieving enhanced device performance at the nanoscale level. The results demonstrate that the optimized DM JL GAA NCFET exhibits enhanced short-channel performance at nanoscale level, reduced subthreshold swing of 49 mV/dec, lower threshold voltage of 0.20 V, and reduced OFF-current of 1.5 × 10–5 nA. Therefore, the proposed design framework strategy paves the way for designers not only to identify the appropriate DM gate configuration and the suitable ferroelectric material for the development of ultralow-power and high-performance nanoelectronic circuits.

Abstract Image

基于栅极工程方面的新型无结GAA负电容场效应管:分析建模和性能评估
提出了一种新的双材料无结栅-全负电容场效应晶体管(DM JL GAA ncfet)亚阈值分析模型。该模型准确再现了器件的静电电位分布、阈下电流特性、阈下电压和阈下斜率。通过用泊松方程求解Landau-Khalatnikov (L-K)方程,该模型提供了与数值结果密切一致的精确解析解。系统分析了通道长度、DM栅极比、铁电层厚度等参数对器件亚阈值性能的影响。研究发现,JL结构与NC效应的战略结合可以实现纳米级器件性能的增强。结果表明,优化后的DM JL GAA NCFET具有纳米级短通道性能增强,亚阈值摆幅减小49 mV/dec,阈值电压降低0.20 V, off电流减小1.5 × 10-5 nA。因此,所提出的设计框架策略不仅为设计人员确定合适的DM栅极配置和合适的铁电材料,为开发超低功耗和高性能纳米电子电路铺平了道路。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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