An ultra-fast and precise automatic design framework for predicting and constructing high-performance shallow-trench-isolation LDMOS devices

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Chenggang Xu, Hongyu Tang, Yuxuan Zhu, Yue Cheng, Xuanzhi Jin, Dawei Gao, Yitao Ma, Kai Xu
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引用次数: 0

Abstract

The shallow trench isolation-based laterally diffused metal–oxide–semiconductor (STI LDMOS) is a crucial device for power integrated circuits. In this article, a novel framework that integrates an optimal objective function, Bayesian optimization (BO) algorithm, and deep neural network (DNN) model is proposed to fully realize the automatic and optimal design of STI LDMOS devices. On the one hand, given the structure of the device, the DNN model in the proposed method can provide ultra-fast and highly accurate performance estimation including breakdown voltage (BV) and specific on-resistance (Ronsp). The experimental results demonstrate 98.68% average prediction accuracy for both BV and Ronsp, higher than that for other machine learning (ML) algorithms. On the other hand, to target the specified value of BV and Ronsp, the proposed framework can fully automatically and optimally design the precise device structure that simultaneously achieves the target performance with the optimal figure of merit (FOM) of the device. Compared to technology computer-aided design (TCAD), there is only a 0.002% error in FOM and a 2.83% average error in BV and Ronsp. Moreover, considering the training time of the DNN model, the proposed framework is 100 times as efficient as other conventional frameworks. Thus, this research provides the experimental groundwork for constructing an automatic design framework for an LDMOS device and opens new opportunities for accelerating the development of LDMOS technology in the future.

Abstract Image

一种用于预测和构建高性能浅沟隔离LDMOS器件的超快速、精确的自动设计框架
基于浅沟槽隔离的横向扩散金属氧化物半导体(stidmos)是功率集成电路的关键器件。本文提出了一种集成最优目标函数、贝叶斯优化(BO)算法和深度神经网络(DNN)模型的新框架,以全面实现STI LDMOS器件的自动优化设计。一方面,考虑到器件的结构,该方法中的DNN模型可以提供超快速和高精度的性能估计,包括击穿电压(BV)和比导通电阻(Ronsp)。实验结果表明,BV和Ronsp的平均预测准确率均为98.68%,高于其他机器学习(ML)算法。另一方面,针对BV和Ronsp的规定值,所提出的框架可以完全自动地优化设计精确的器件结构,同时以器件的最优优值(FOM)实现目标性能。与计算机辅助设计技术(TCAD)相比,FOM的平均误差仅为0.002%,BV和Ronsp的平均误差为2.83%。此外,考虑到DNN模型的训练时间,该框架的效率是其他传统框架的100倍。因此,本研究为构建LDMOS器件的自动设计框架提供了实验基础,并为未来加速LDMOS技术的发展开辟了新的机遇。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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