Double-diode and triple-diode solar cell models: invertible approximate analytical expressions based on the g-function approach

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-12-05 DOI:10.1007/s10825-024-02259-1

Martin Ćalasan

{"title":"Double-diode and triple-diode solar cell models: invertible approximate analytical expressions based on the g-function approach","authors":"Martin Ćalasan","doi":"10.1007/s10825-024-02259-1","DOIUrl":null,"url":null,"abstract":"<div>Solar cells can be represented by different n-diode models. The most commonly used models are single-diode (SDM), double-diode (DDM), and triple-diode (TDM). The SDM is the simplest and most widely used model with reversible current (I)-voltage (V) expressions. The DDM and TDM are more precise models, but only a few approximate analytical Lambert W approaches are available for current‒voltage (I–V) expressions in the literature. This paper presents approximate analytical invertible voltage‒current expressions (V–I) for DDM and TDM via a g-function. Moreover, this paper presents a new formula for calculating the root mean square error (RMSE) in voltage estimation based on the derived expressions. It also demonstrates the limitations of the Lambert W function and the numerical unsolvability of its solution through examples for these purposes. In addition, the paper discusses and tests analytical and iterative solutions for solving the g-function and provides the MATHEMATICA code for DDM and TDM V–I expressions via the g-function. Therefore, this paper confirms the effectiveness and accuracy of using the g-function in solar cell modeling.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02259-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Solar cells can be represented by different n-diode models. The most commonly used models are single-diode (SDM), double-diode (DDM), and triple-diode (TDM). The SDM is the simplest and most widely used model with reversible current (I)-voltage (V) expressions. The DDM and TDM are more precise models, but only a few approximate analytical Lambert W approaches are available for current‒voltage (I–V) expressions in the literature. This paper presents approximate analytical invertible voltage‒current expressions (V–I) for DDM and TDM via a g-function. Moreover, this paper presents a new formula for calculating the root mean square error (RMSE) in voltage estimation based on the derived expressions. It also demonstrates the limitations of the Lambert W function and the numerical unsolvability of its solution through examples for these purposes. In addition, the paper discusses and tests analytical and iterative solutions for solving the g-function and provides the MATHEMATICA code for DDM and TDM V–I expressions via the g-function. Therefore, this paper confirms the effectiveness and accuracy of using the g-function in solar cell modeling.

查看原文本刊更多论文

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.