Journal of Computational Electronics最新文献

{"title":"Light-based detection of aquatic algae using one-dimensional photonic crystals","authors":"Bhuvneshwer Suthar,&nbsp;Abhilasha Choudhary,&nbsp;Ravi Parihar,&nbsp;Anami Bhargava","doi":"10.1007/s10825-025-02419-x","DOIUrl":"10.1007/s10825-025-02419-x","url":null,"abstract":"<div><p>We investigate a one-dimensional photonic crystal (1D-PhC) structure with a central defect layer designed for optical biosensing applications, particularly for algae detection. The structure consists of alternate layers of silicon dioxide (SiO₂) and titanium dioxide (TiO₂). A defect layer, representing the biological sample, is introduced at the center generating a confined defect mode within the PBG. Using the transfer matrix method, we explore the effects of structural parameters, including the number of unit cells, defect layer thickness, and angle of incidence, on the transmission spectra to optimize the structural parameter. Finally, the biosensor’s performance is evaluated by simulating various algae species as defect layers. It is to mention that Green algae offers a peak shift to 584.1477 nm and FWHM of 0.060993 nm with QF of 9577.32. Other species show similar tunability and further cause redshifts in the resonance wavelength. Distinct shifts in the resonance wavelength confirm the sensor’s high sensitivity and selectivity demonstrating the potential of the device as a robust, label-free platform for environmental biosensing. Hence, such new idea is based on the detection of the presence of Aquatic Algae in water that creates water pollution hazardous for human and animals and plants.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145037533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electron Coulomb repulsion versus impurity potential in disordered interacting systems","authors":"Poorya Rabi-beigi,&nbsp;Rostam Moradian,&nbsp;Chinedu E. Ekuma","doi":"10.1007/s10825-025-02404-4","DOIUrl":"10.1007/s10825-025-02404-4","url":null,"abstract":"<div><p>In this work, we introduce a new calculation method for disordered interacting electron systems. Since both the Coulomb repulsion and impurity potential modify the system band structure and hence its electronic properties, we investigate the competition between the electrons’ Coulomb repulsion potential and the impurity potential in changing the system band structure and its phase diagram. This method is applied to a disordered interacting electron square lattice system. The advantages of our method include eliminating the influence of random numbers in the Monte Carlo process and avoiding computational errors caused by repeated evaluations of Green’s function. For comparison of the advantages of our multi-site versus single-site methods, the renormalized band structure in the dynamical mean field theory (DMFT) plus coherent potential approximation (CPA) and the multi-site beyond effective medium supercell approximation (BEMSCA) are calculated. By using realistic calculated band structures, we investigate the competition between the Coulomb interaction and impurity potential parameters in the system phase diagram. Our calculated renormalized band structures show that the (<span>(delta = 4.0t)</span>, <i>u</i> = 0) point is a point at which band splitting is observed. By increasing the Coulomb repulsion, <i>u</i>, the energy gap between split bands reduces and completely disappears at <i>u</i>_c1 = 3.11<i>t</i> and <i>u</i>_c1 = 2.7<i>t</i> for the DMFT+CPA and four-site BEMSCA, respectively. For Coulomb repulsion strengths greater than <i>u</i>_c1, <i>u</i> &gt; <i>u</i>_c1, the two bands merge into a single energy band, hence creating a paramagnetic metallic state. The metallic state occurs in a region where the strength of the Coulomb interaction is large enough to overcome the disorder potential effects. This metallic state extends until <i>u</i>_c2 = 13.99<i>t</i> and <i>u</i>_c2 = 8.15<i>t</i> for the DMFT+CPA and four sites for BEMSCA, respectively. These metallic states are sandwiched between two insulator states, band insulation <i>u</i> &lt; <i>u</i>_c1 and Mott insulation <i>u</i> &gt; <i>u</i>_c2. Another important result is the creation of a flat valence band at the Fermi energy for special Coulomb repulsion strengths. The flattening of the valence band can be considered as a mechanism contributing to the high-temperature superconductivity in ceramic superconductors.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145037479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-band model of T-graphene","authors":"Hamze Mousavi","doi":"10.1007/s10825-025-02410-6","DOIUrl":"10.1007/s10825-025-02410-6","url":null,"abstract":"<div><p>Utilizing a two-band tight-binding Hamiltonian model in conjunction with Green’s function methodology, this study examines the effects of localized <span>(sigma)</span> and delocalized <span>(pi)</span> electrons on the density of states, Pauli paramagnetic susceptibility, and electronic heat capacity of a T-graphene sheet. The analysis reveals an expansion in the bandwidth and an increase in the number of Van-Hove singularities. Importantly, in addition to the magnetic characteristics, which encompass diamagnetism in graphene-based nanosystems, a paramagnetic response linked to the itinerant <span>(pi)</span> electrons can also manifest. Furthermore, a Schottky anomaly in the heat capacity has been observed at various temperatures, attributed to the contributions from the <span>(sigma)</span> and <span>(pi)</span> bands. This investigation underscores the significant contributions of both <span>(sigma)</span> and <span>(pi)</span> electrons to the aforementioned physical properties.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145037532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tracing radiation-induced degradation in bipolar junction transistors: a novel predictive data-driven framework","authors":"Xiang Huang","doi":"10.1007/s10825-025-02414-2","DOIUrl":"10.1007/s10825-025-02414-2","url":null,"abstract":"<div><p>Bipolar junction transistors’ (BJTs’) dependability in radiation-hardened electronics, nuclear instrumentation, and space systems is adversely affected by total ionizing dose (TID)-induced degradation, which presents a serious obstacle to the longevity and functionality of the device. Proactive maintenance and efficient reliability assessment depend on the accurate prediction of such degradation. This research tackles this issue by creating a thorough data-driven framework that makes use of sophisticated supervised machine learning (ML) models, such as light gradient boosting machine, extreme gradient boosting, and categorical boosting (CatBoost), in addition to ensemble techniques like Stacking and Voting regressors. An 80/20 train-test split and rigorous fivefold cross-validation were used to ensure model robustness, and a carefully selected experimental dataset of 565 data points from different BJT types was used. The metaheuristic pufferfish optimization algorithm (POA) was used to systematically perform hyperparameter tuning, which significantly improved predictive performance. With a test R² of 0.9827, RMSE of 0.0926, and MAE of 0.0628, the POA-Voting model outperformed the rest of the models in terms of accuracy. The models showed accurate and dependable degradation forecasts, continuously keeping mean absolute percentage errors (MAPE) below 2.1%. Comparative studies demonstrated POA’s superior hyperparameter optimization over a genetic algorithm, while SHAP analysis validated the dominant influence of total ionizing dose on degradation. Real-time monitoring, prognostics, and improved device design in crucial radiation-exposed applications are made possible by the resulting ML pipeline, which provides an interpretable and precise tool for predicting radiation-induced transistor degradation.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145021651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reliability optimization of charge deduction approach employing bio-tunnel FET","authors":"Amit Bhattacharyya,&nbsp;Manash Chanda","doi":"10.1007/s10825-025-02409-z","DOIUrl":"10.1007/s10825-025-02409-z","url":null,"abstract":"<div><p>This article presents a study of the reliability of miscellaneous biomarker recognition in serum for both healthy and diseased males and females and the relevant sensitivity analysis using a short-gated dual-pocket-doped hetero-gate metal stack with hetero-structure tunnel FET-supported biosensor (SG-DP-HGM Bio-HTFET). The significant biomarkers preferred and modeled in this article comprise prostate-specific antigen (PSA), human epididymis protein 4 (HE4), C-erbB-2, and monokine induced by interferon gamma (MIG). The charge deduction reliant approach has been utilized, and the outcomes align through the theoretical perceptive of the model. Device optimization for superior sensitivity is achieved by using Silvaco ATLAS TCAD device simulator. A maximum 17.94% inaccuracy in sensitivity regarding sub-threshold swing (<i>S</i>_SS) has been obtained when we presume steric effect rather repulsive steric effect throughout the concentration deviations. Hence, repulsive steric effect must be addressed during the study of label-free biosensing.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145028107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and Analysis of the performance of strained Ge-based pin switch through Machine Learning framework for application in mm-wave frequency","authors":"Bias Bhadra,&nbsp;Abhijit Kundu,&nbsp;Jhuma Kundu,&nbsp;Moumita Mukherjee,&nbsp;Radha Tamal Goswami","doi":"10.1007/s10825-025-02411-5","DOIUrl":"10.1007/s10825-025-02411-5","url":null,"abstract":"<div><p>We discuss the design and analysys of the performance of a strain modulated Ge/Ge_0.98Sn_0.02 vertical channel <i>pin</i>-based switch for application in mm-wave frequency. The device's performance in the mm-wave region is assessed using a Nano-mixed Quantum Corrected Strain Modified Drift–Diffusion Nonlinear mathematical (NQCSM-DD) model along with Machine Learning Framework. The study investigates the switching characteristics of the device, considering V-I characteristics, reverse recovery time, power dissipation, Insertion Loss (IL), and Isolation (ISOL).The inherent material attributes of the DUT (Device Under Test) are improved considerably by the addition of 2% of Sn into the intrinsic Ge material. The NQCSM-DD model is calibrated by analyzing the experimental and simulated performance of a flat structure-based Si <i>pin</i> device under similar circumstances. The detailed investigation and analysis proves that the switching performance of the proposed DUT is significantly enhanced. The results, compared with the super-lattice structure-based GaN/AlGaN <i>pin</i> device, show that Ge/Ge_0.98Sn_0.02 outperforms its GaN/AlGaN counterpart in terms of reverse recovery tim, power dissipation, and, IL and ISOL. The proposed DUT offer low IL (0.121 dB and 0.03671 dB for series-shunt &amp; shunt SPST switches, respectively) and high ISOL (69.72 dB and 80.23 dB for series-shunt &amp; shunt SPST switches, respectively) at 120 GHz . Furthermore, the Random-Forest-Regression (R-F-R) model within a Machine Learning Framework (MLF) is applied to determine the device’s efficiency. The proposed model’s reliability study is reported in this paper in details. Ge/Ge_0.98Sn_0.02 vertical channel <i>pin</i>-based device for the application in mm-wave frequency.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145011794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermodynamically consistent stabilization of the drift-diffusion model for arbitrary band structures and carrier statistics","authors":"Tobias Linn,&nbsp;Max Renner,&nbsp;Christoph Jungemann","doi":"10.1007/s10825-025-02412-4","DOIUrl":"10.1007/s10825-025-02412-4","url":null,"abstract":"<div><p>To this day, the drift-diffusion model remains the most widely applied semiconductor simulation tool. This is due to its unrivaled numerical robustness when it is discretized with the finite volume method and the Scharfetter–Gummel stabilization. Unfortunately, this stabilization is only valid for nondegenerate carrier statistics. Several extensions of the Scharfetter–Gummel scheme to degenerate semiconductors have been proposed; however, they either rely on additional approximations or lack the stability for a full-scale device simulation. In this paper, we address this issue and present a generalization of the Scharfetter–Gummel scheme using no further approximations. Our scheme works for arbitrary band structures and coarse grids and is guaranteed to be thermodynamically consistent. Similar to Scharfetter–Gummel, it leads to a diagonally dominant Jacobian (M-matrix) for the discrete continuity equation preserving its excellent stability properties. An implementation of the algorithm is available online via Zenodo under the MIT license. It has already been used in a 2D device simulation at 4K where it exhibited excellent stability at a negligible runtime penalty.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-025-02412-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145021652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On estimating the threshold voltage of vertical junctionless GaN power fin-MOSFETs","authors":"Smriti Singh,&nbsp;Ankita Mukherjee,&nbsp;Aasim Ashai,&nbsp;Tanmoy Pramanik,&nbsp;Biplab Sarkar","doi":"10.1007/s10825-025-02406-2","DOIUrl":"10.1007/s10825-025-02406-2","url":null,"abstract":"<div><p>Traditional analytical models derived for Si logic devices fail to estimate the threshold voltage (<i>V</i>_<i>TH</i>) of vertical junctionless GaN power Fin-channel metal oxide semiconductor field effect transistors (VJ GaN Fin-MOSFETs). Solving two-dimensional Poisson’s equation inside the drift region of VJ GaN Fin- MOSFETs is not a viable option as of now. Thus, we report an alternate methodology to derive the analytical model for estimating the <i>V</i>_<i>TH</i> of VJ GaN Fin-MOSFETs. The proposed model uses an available baseline model followed by adding tuning parameters to the baseline model via a standard procedure. The proposed model faithfully predicts the effect of crucial geometrical and bias parameters on <i>V</i>_<i>TH</i>; along with estimating the drain induced barrier lowering effect. The proposed methodology is generic in nature; it can be applied to other (ultra)wide bandgap semiconductor based VJ power MOSFETs that are currently under extensive investigation.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 6","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145005500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A conformal miniaturized frequency selective surface with high angular stability for EMI shielding in 5G n258 band applications","authors":"Nigar Berna Teşneli,&nbsp;Fehmi Sandıkçı","doi":"10.1007/s10825-025-02413-3","DOIUrl":"10.1007/s10825-025-02413-3","url":null,"abstract":"<div><p>We present the design and analysis of a polarization-insensitive, angular stable, conformal, miniaturized stopband frequency selective surface (FSS) for fifth-generation (5G), n258 (26 GHz) band electromagnetic (EM) shielding applications. The unit cell of the FSS comprises a basic square-loop resonator with four stub arms placed on inside of each edge. The optimized FSS resonates at 26.02 GHz, with a bandwidth (BW) of 7.43 GHz (21.96–29.39 GHz), effectively covering the desired 5G n258 band. The presented FSS exhibits a stable frequency response, enabling a well BW stability merit across a wide range of incidence angles, from 0° to 80°, for both transverse electric (TE) and transverse magnetic (TM) polarizations. Due to the thin-profile flexible substrate, FSS provides a high conformity and maintains a stable transmission response up to 180° conformal angle. To validate the simulation results, an equivalent circuit model was determined, and measurements were performed on a manufactured prototype of the FSS. And good agreement is observed between the full wave and equivalent circuit simulations, and measurement results. Finally, the novel FSS is proposed as a potential candidate for n258 band electromagnetic interference (EMI) shielding, owing to its presented advantages.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144920539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficient quantum transport simulations in nanodevices using multi-band discontinuous Galerkin methods","authors":"Valmir Ganiu,&nbsp;Dirk Schulz","doi":"10.1007/s10825-025-02398-z","DOIUrl":"10.1007/s10825-025-02398-z","url":null,"abstract":"<div><p>As interest in advanced nanodevices grows, incorporating interband coupling effects becomes crucial for obtaining accurate and physically meaningful results when analyzing transport phenomena. This study presents a novel approach that combines the multi-band envelope function model with the discontinuous Galerkin method, resulting in an efficient algorithm tailored for simulating interband kinetics. Our method achieves a relative <span>(L^infty)</span> error that is <span>(40;)</span>% lower than traditional finite difference schemes while maintaining comparable runtime. Furthermore, numerical experiments confirm the improved convergence behavior of the proposed algorithm, particularly for simulations of resonant interband tunneling diodes.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-025-02398-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144914827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}