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Realization of energy efficient GF Xtime multiplier using quantum dot cellular automata (QCA) for AES-MixColumn
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02248-4
P. Rajasekar, H. Mangalam, K. H. Shakthi Murugan, K. Kalaiselvi
{"title":"Realization of energy efficient GF Xtime multiplier using quantum dot cellular automata (QCA) for AES-MixColumn","authors":"P. Rajasekar,&nbsp;H. Mangalam,&nbsp;K. H. Shakthi Murugan,&nbsp;K. Kalaiselvi","doi":"10.1007/s10825-024-02248-4","DOIUrl":"10.1007/s10825-024-02248-4","url":null,"abstract":"<div><p>Recent advances in VLSI technology have led to the introduction of Quantum dot Cellular Automata (QCA) technology as a possible alternative to CMOS technology. This is owing mostly to its tiny feature size, high operating frequency, and low power consumption. During the preliminary research stage, QCA has been used to execute diverse models of combinatorial and sequential circuits, which serve as the fundamental functional components in a wide range of applications. Currently, research is focusing on the implementation of application-oriented architectures using QCA. The motivation behind this research work is to incorporate Galois Field (GF) functions into the AES Mix- Columns operation. We have proposed an Xtime multiplier implemented using QCA technology and analyzed the multiplier using various XOR models of QCA.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Next-generation high-performance complex optical sequential circuits: an electro-optic modulation in GaAlAs directional couplers
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02242-w
Ajay Yadav, Amit Prakash, Santosh Kumar, Ajay Kumar
{"title":"Next-generation high-performance complex optical sequential circuits: an electro-optic modulation in GaAlAs directional couplers","authors":"Ajay Yadav,&nbsp;Amit Prakash,&nbsp;Santosh Kumar,&nbsp;Ajay Kumar","doi":"10.1007/s10825-024-02242-w","DOIUrl":"10.1007/s10825-024-02242-w","url":null,"abstract":"<div><p>The concept of optical switching utilizing directional couplers and the electro-optic effect has been leveraged to design various sequential circuits. By applying an appropriate voltage to the core of the couplers, switching of optical pulse signals is achieved through optical tunneling phenomena. This paper presents a comprehensive mathematical analysis of electro-optic effect-based switching, demonstrating its efficacy through 3-D MATLAB simulations of the optical switch layout. A clocked D flip-flop, incorporating an optical delay unit, is examined using 3-D numerical simulations, illustrating the spatial propagation of optical pulses and providing time domain plots for verification. Employing the proposed clocked D flip-flop as a basic module, optically clocked ripple up/down-counters are implemented. Additionally, the design and analysis of an optical 4-bit shift register are discussed, showcasing its ability to effectively shift pulses via 3-D simulations of optical field propagation and time domain plots. This study presents a comprehensive analysis of the extinction ratio, contrast ratio, and amplitude modulation characteristics of the proposed optical code converter circuit. These findings offer an effective methodology for implementing both basic sequential models and complex optical circuits.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Computation of an efficient pipelined fast Fourier transform architecture characterized with real-valued functions
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02237-7
Surya Prasad, Arunachalaperumal Chellaperumal
{"title":"Computation of an efficient pipelined fast Fourier transform architecture characterized with real-valued functions","authors":"Surya Prasad,&nbsp;Arunachalaperumal Chellaperumal","doi":"10.1007/s10825-024-02237-7","DOIUrl":"10.1007/s10825-024-02237-7","url":null,"abstract":"<div><p>The computational characteristics of the fast Fourier transform associated with real-time information signals using traditional techniques is deemed the maximal hardware void with peak power consumption, which is an essential task for any researchers while illustrating the designs of architectures in very large-scale integration circuits. The proposed scheme associated with the pipeline reduces the time of processing at the cost of several registers, and to ensure the efficient contribution for reducing the power, the modification over the complex and critical multiplier has been introduced with minimal internal real-time multipliers, which in turn is reconstructed by canonical signed digit multipliers with the adaptation over the technique of resource sharing. The verification of the results of experimentation has been made. It is inferred that the proposed incorporated design is highly efficient regarding area, speed, and power compared to state-of-the-art techniques.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laser interaction with a MIM nanostructure including bowtie aperture and cylindrical holes for plasmonic field enhancement based on strong coupling of LSPR and SPPs
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02258-2
Mohsenifard Atefeh, Mohebbi Masoud
{"title":"Laser interaction with a MIM nanostructure including bowtie aperture and cylindrical holes for plasmonic field enhancement based on strong coupling of LSPR and SPPs","authors":"Mohsenifard Atefeh,&nbsp;Mohebbi Masoud","doi":"10.1007/s10825-024-02258-2","DOIUrl":"10.1007/s10825-024-02258-2","url":null,"abstract":"<div><p>In this paper, a metal–insulator–metal (MIM) array nanostructure consisting of a bowtie aperture and cylindrical holes is proposed as a field amplifier. This hybrid array consists of a grating film made of gold in which some cylindrical holes are replaced with a bowtie aperture, sapphire substrate, and finally a metal film. The array of cylindrical holes acting as a two-dimensional grating can effectively excite propagating surface plasmon polariton modes along a metal film, but the electric field enhancement inside it is relatively weak. On the other hand, the bowtie aperture, with its sharp corners and small gap, can provide a greater intensity enhancement factor within its gap. The combination of these two MIM nanostructures forms a strong coupling between the propagating and localized surface plasmons, leading to an improvement in field confinement in the bowtie aperture in the sub-diffraction limit and its magnitude increase of 115 times. This effective enhancement can be used in plasmonic sensors, lasers, SERS, etc., applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A simple approach for integrating quantum confinement effects into TCAD simulations of tunnel field-effect transistors
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02253-7
Bui Huu Thai, Chun-Hsing Shih, Nguyen Dang Chien
{"title":"A simple approach for integrating quantum confinement effects into TCAD simulations of tunnel field-effect transistors","authors":"Bui Huu Thai,&nbsp;Chun-Hsing Shih,&nbsp;Nguyen Dang Chien","doi":"10.1007/s10825-024-02253-7","DOIUrl":"10.1007/s10825-024-02253-7","url":null,"abstract":"<div><p>Quantum confinement effects (QCEs) are significant in tunnel field-effect transistors (TFETs) since their operation is based on the mechanism of band-to-band tunneling. This study presents a simple approach for integrating QCEs into the semiclassical TCAD simulations of TFETs. The approach was based on a post-processing computation in which 1D Schrodinger equations were first solved manually, then their solutions were used to modify the conduction and valence band profiles in the 2D TCAD simulations. For each bias condition, only a 1D potential profile at the position of the maximum tunneling generation was adopted to describe the QC through the solutions of Schrodinger equations for electrons and holes. The quantum-simulated results based on this simple method show good agreements with both quantum–mechanical simulations based on a sophisticated approach and experimental data. The analyses also show that the van Dort quantum model available in commercial TCAD simulators is not appropriate for describing QCEs in TFETs. The approach can be practically employed in studying the influences of QCEs on the electrical characteristics, in particular the dependence of QCEs on the body thickness of TFET devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum transport properties of a double-barrier quantum well structure based on V-cut edge-patterned armchair graphene nanoribbon
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02264-4
Bikramjit Basumatary, Agile Mathew
{"title":"Quantum transport properties of a double-barrier quantum well structure based on V-cut edge-patterned armchair graphene nanoribbon","authors":"Bikramjit Basumatary,&nbsp;Agile Mathew","doi":"10.1007/s10825-024-02264-4","DOIUrl":"10.1007/s10825-024-02264-4","url":null,"abstract":"<div><p>A double-barrier quantum well is created using a larger band gap V-cut modified armchair graphene nanoribbon (AGNR) for the barrier region and a pristine AGNR with a smaller bandgap for the channel region. The numerical non-equilibrium Green’s function (NEGF) method, based on the pi-orbital tight-binding model, is employed to study the quantum transport properties of the device. The effects of various dimensional parameters, such as contact width, channel length, and distance between V-cuts in the barrier region, are investigated. The plot of the local density of states (LDOS) shows the formation of a single quantized quasi-energy state in the channel region, corresponding to a peak in transmission. The V–I characteristics of the device exhibit negative differential resistance (NDR) regions for a certain range of bias values. This device’s resonant tunneling performance parameters are compared with those of a similar, previously reported structure.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142757972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All-optical photonic crystal logic gates and functions based on threshold logic
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02256-4
Arash Firouzimoghaddam, Hojjat Sharifi
{"title":"All-optical photonic crystal logic gates and functions based on threshold logic","authors":"Arash Firouzimoghaddam,&nbsp;Hojjat Sharifi","doi":"10.1007/s10825-024-02256-4","DOIUrl":"10.1007/s10825-024-02256-4","url":null,"abstract":"<div><p>This paper presents a novel photonic crystal structure for designing all-optical photonic crystal logic gates and functions based on threshold logic concept. The structure offers two- and three-input AND/NAND logic gates as well as three-input majority/minority functions. In this method, the summation of inputs values connects to a threshold detector with varying threshold values in order to achieve different logic gates and functions. Furthermore, the impact of variations in the diameter and position of rods on the performance of the proposed structures has been examined. Simulation results demonstrate the successful operation of the proposed structures even in the presence of 14% variation in rod diameter, indicating that the presented logic gates exhibit minimal sensitivity to process variations. The finite difference time domain method was used to evaluate the performance of the proposed structures with a switching power requirement of is 2.5 W.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and simulation of the charge layer effect on the Schottky junction characteristics using an ensemble Monte Carlo model
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-11-30 DOI: 10.1007/s10825-024-02249-3
Fatemeh Haddadan, Mohammad Soroosh, Ramakrishnan Rajasekar
{"title":"Design and simulation of the charge layer effect on the Schottky junction characteristics using an ensemble Monte Carlo model","authors":"Fatemeh Haddadan,&nbsp;Mohammad Soroosh,&nbsp;Ramakrishnan Rajasekar","doi":"10.1007/s10825-024-02249-3","DOIUrl":"10.1007/s10825-024-02249-3","url":null,"abstract":"<div><p>In this research, an efficient two-valley Monte Carlo model simulates the Schottky junction. Impurity and phonon scatterings are considered, and impact ionization is included in the scattering matrix. Non-parabolic energy bands are assumed, and tunneling and thermionic emission are the current components. By adding a thin layer, it is shown that the formation of an electric field opposite to the electron motion direction at the junction boundary increases the effective height of the Schottky barrier. By changing the impurity concentration density of this thin layer, the change in the effective height of the Schottky barrier and consequently the simulated passing current is studied. A comparison of the results obtained from the simulation with valid scientific data confirms the correctness of the presented model. The proposed model can be widely used in the analysis of Schottky-based devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An efficient multispectral CsSnI3 MSM photodetector using back grooves and light trapping optimization: FDTD-GA calculations 利用背沟槽和光捕获优化技术的高效多光谱铯硒碘3 MSM 光电探测器：FDTD-GA 计算
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-11-28 DOI: 10.1007/s10825-024-02251-9
H. Ferhati, F. Djeffal
{"title":"An efficient multispectral CsSnI3 MSM photodetector using back grooves and light trapping optimization: FDTD-GA calculations","authors":"H. Ferhati,&nbsp;F. Djeffal","doi":"10.1007/s10825-024-02251-9","DOIUrl":"10.1007/s10825-024-02251-9","url":null,"abstract":"<div><p>The present work aims at developing a new design strategy based on optimizing light trapping management in the CsSnI<sub><i>3</i></sub> perovskite active layer using back groove engineering, to tune the broadband photoresponsivity. To do so, an extensive numerical simulations based on 2D-Finite Difference Time Domain (FDTD)-SILVACO calculations are carried out to assess the optoelectronic properties of the proposed sensor, including the impact of back grooves engineering. The effect of the groove geometry on the photosensing characteristics of the photodetector (PD) is analyzed. It is found that the depth, width and the period of the back grooves can modulate the optical behavior of the CsSnI<sub><i>3</i></sub> perovskite active layer, showing a great potential for improving the light harvesting capabilities over a wide spectral range. A Genetic Algorithm Optimization (GAO) technique is implemented to find out the best groove geometry and period, offering the highest photoresponse over UV to NIR spectral bands. The obtained results show the ability of the proposed strategy to improve and tune the optoelectronic properties of the device, demonstrating a high responsivity of 78 mA/W and an improved I<sub>ON</sub>/I<sub>OFF</sub> ratio of 61 dB. Therefore, the proposed approach can open new paths to enhance the optical and electrical performances of thin film perovskite photodetectors by optimizing the light trapping management using back groove engineering and metaheuristic calculations.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and optimization of a terahertz photonic crystal fiber based biosensor to detect malaria disease 基于太赫兹光子晶体光纤的疟疾检测生物传感器的设计与优化
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-11-26 DOI: 10.1007/s10825-024-02255-5
Vishal Chaudhary, Sonal Singh
{"title":"Design and optimization of a terahertz photonic crystal fiber based biosensor to detect malaria disease","authors":"Vishal Chaudhary,&nbsp;Sonal Singh","doi":"10.1007/s10825-024-02255-5","DOIUrl":"10.1007/s10825-024-02255-5","url":null,"abstract":"<div><p>This study introduces a dual core photonic crystal fiber (DC-PCF) based biosensing approach for early detection of malaria in individuals by monitoring the variations in the red blood cells (RBCs). The proposed DC-PCF comprises four layers of a hexagonal lattice with circular air holes. In the proposed DC-PCF, we have used a central elliptical hole to infiltrate RBCs samples. The proposed study helps to detect various stages of malaria, such as infected RBCs, including the Ring stage, Trophozoite stage, and Schizont stage, by analyzing the changes in the peak wavelength. The proposed refractive index (RI) based sensor is designed to operate within an RI range of 1.33 to 1.41, enabling the detection of malaria. The numerical analysis indicate that our biosensor demonstrates significant sensitivity across different stages, such as 12,00000 nm/RIU for the ring stage, 11,15,263.15 nm/RIU for the trophozoite stage, and 11,13,793.10 nm/RIU for the schizont stage under x-polarization. Similarly, under y-polarization, the sensitivity is observed to be 10,50,000 nm/RIU for the ring stage, 10,54,736.84 nm/RIU for the trophozoite stage, and 10,32,758.62 nm/RIU for the schizont stage. The proposed DC-PCF-based biosensor is highly suitable for biological analysis and early malaria detection because it has a low detection limit and superior sensing performance.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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