Journal of Computational Electronics最新文献_第3页

Influence of vacancy concentration on the electronic and thermoelectric performance of Irida-Graphene nanoribbons 空位浓度对铱达-石墨烯纳米带电子和热电性能的影响

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-09-02 DOI: 10.1007/s10825-026-02629-x

Reza Kalami

{"title":"Influence of vacancy concentration on the electronic and thermoelectric performance of Irida-Graphene nanoribbons","authors":"Reza Kalami","doi":"10.1007/s10825-026-02629-x","DOIUrl":"10.1007/s10825-026-02629-x","url":null,"abstract":"<div><p>In this work, we present a comprehensive investigation of the influence of vacancy defects on the electronic and thermoelectric properties of Irida-Graphene nanoribbons (IGNRs). Using a tight-binding framework combined with the non-equilibrium Green’s function (NEGF) formalism, we systematically analyze pristine and vacancy-modified structures with up to six defects in the transport region. The results reveal that vacancies reshape the band structure, introducing midgap states, band splitting, and defect-induced localization. The density of states (DOS) becomes increasingly asymmetric with rising vacancy concentration, which enhances the Seebeck coefficient while simultaneously reducing electrical conductivity. Current–voltage characteristics confirm a monotonic suppression of current as the number of vacancies increases, while the maximum electronic figure of merit <i>ZT</i><sub><i>e,max</i></sub> displays a monotonic increase with vacancy concentration, demonstrating the effectiveness of defect engineering in enhancing thermoelectric performance. These findings demonstrate that vacancy engineering provides a powerful and tunable strategy for tailoring the band gap, transport behavior, and thermoelectric efficiency of IGNRs.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical and machine learning-based modelling of electromagnetic exposure and thermal effects in human head at 2.45 GHz 2.45 GHz下人体头部电磁暴露和热效应的数值和机器学习建模

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-08-31 DOI: 10.1007/s10825-026-02632-2

Deepshikha Bhargava, Praveen Kumar Sharma, Phadungsak Rattanadecho, Sushil Kumar Singh

{"title":"Numerical and machine learning-based modelling of electromagnetic exposure and thermal effects in human head at 2.45 GHz","authors":"Deepshikha Bhargava, Praveen Kumar Sharma, Phadungsak Rattanadecho, Sushil Kumar Singh","doi":"10.1007/s10825-026-02632-2","DOIUrl":"10.1007/s10825-026-02632-2","url":null,"abstract":"<div><p>We evaluate the distance-dependent electromagnetic (EM) exposure of a heterogeneous human head model at 2.45 GHz; a frequency widely used in wireless communication and healthcare sensing systems. While high-frequency EM waves are known to exhibit shallow penetration, a systematic analysis of how source-to-head distance influences localized absorption and thermal response in multilayer tissues remains limited. A two-dimensional (2D) head model is developed to examine these effects for source separations ranging from 1 to 50 mm, depicting practical wireless device operating conditions. Electric field, SAR, and temperature distributions are computed by solving a coupled EM wave and bioheat transfer model using Finite Element Method (FEM). Results reveal a non-monotonic dependence of EM absorption on source distance, with peak absorption occurring at a separation of 6 mm. The maximum electric field, SAR, and temperature in the skin layer are 66.11 V/m, 3.15 W/kg, and 37.08 °C, respectively, with values decreasing in deeper tissues. A machine learning (ML) framework is implemented to predict SAR and temperature variations, demonstrating strong agreement with the FEM results. The findings emphasize critical role of source proximity in near-field exposure scenarios and provide useful insights for the design and safety evaluation of wireless sensor and communication devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148928060","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Physics-constrained Neural ODE compact modeling of multi-terminal MoS2 memtransistors for LTspice neuromorphic circuit simulation 用于LTspice神经形态电路仿真的多端MoS2 mem晶体管的物理约束神经ODE紧凑建模

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-08-31 DOI: 10.1007/s10825-026-02635-z

Sumit Vyas

{"title":"Physics-constrained Neural ODE compact modeling of multi-terminal MoS2 memtransistors for LTspice neuromorphic circuit simulation","authors":"Sumit Vyas","doi":"10.1007/s10825-026-02635-z","DOIUrl":"10.1007/s10825-026-02635-z","url":null,"abstract":"<div><p>Compact models are required to connect multi-terminal molybdenum disulfide (MoS<sub>2</sub>) memtransistors with standard circuit simulators, but only a limited number of such models are available. In this work, a physics-constrained neural ordinary differential equation (Neural ODE) compact model was developed and implemented as an LTspice behavioral subcircuit, in which the internal switching dynamics were learned from a reduced-order teacher. A Biolek-type directional window was combined with the exact hard-zero expression <span>({n}_{theta }left(w,{V}_{DS}right)-{n}_{theta }left(w,0right))</span>, due to which the state rate becomes exactly zero at zero drain–source voltage. The mean in-range coefficient of determination obtained for five seeds was <span>({R}^{2}=0.999874pm 0.000055)</span>. For the selected model, the out-of-range <span>({R}^{2})</span> values at <span>(pm 9)</span> and <span>(pm 11)</span> V were 0.8506 and 0.7586, respectively, as compared to 0.6511 and 0.3595 for the fitted linear Biolek model. The hysteresis-area error was 34.03% for the learned model, as compared to 40.23% for the fitted linear model, whereas the linear model showed smaller low-conductance-state and pulse-nonlinearity errors. The normalized comparison with published MoS<sub>2</sub> memtransistor data showed good agreement for potentiation (<span>({R}^{2}=0.9755)</span>), whereas the agreement for depression curvature was weak (<span>({R}^{2}=0.2738)</span>). The state and current <span>({R}^{2})</span> values obtained from the exported LTspice data both exceeded 0.999999, i.e., agreement at numerical precision. The results show that the model can be used as a circuit-compatible emulator within the investigated conditions, but it is not a replacement for calibration with measured device data.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148928085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analytical modeling of 2DEG and I-V characteristics for BN/diamond transistor devices BN/金刚石晶体管器件的2DEG和I-V特性分析建模

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-08-29 DOI: 10.1007/s10825-026-02623-3

Yao Li, Chenxu Wang, Kai Su, Yifan Xu, Jinfeng Zhang, Tao Lin, Jiaduo Zhu, Jincheng Zhang, Yue Hao

{"title":"Analytical modeling of 2DEG and I-V characteristics for BN/diamond transistor devices","authors":"Yao Li, Chenxu Wang, Kai Su, Yifan Xu, Jinfeng Zhang, Tao Lin, Jiaduo Zhu, Jincheng Zhang, Yue Hao","doi":"10.1007/s10825-026-02623-3","DOIUrl":"10.1007/s10825-026-02623-3","url":null,"abstract":"<div><p>Cubic boron nitride (c-BN)/diamond heterostructure provides a new solution to avert the challenging diamond n-type doping and facilitates high two-dimensional carrier density and mobility in diamond field effect transistor (FET). However, the growth of c-BN/diamond system is still difficult at present. In this study, a physics-based analytical model for the 2DEG sheet density and drain current in c-BN/diamond transistors is developed by incorporating the material-specific band structure, electrostatic conditions, and carrier transport properties of the heterostructure into the charge control and transport formulations. The crucial physical effects, such as velocity saturation, channel length modulation, and short-channel effects, are also included. The velocity field-related arguments and structural parameters of the heterostructures are varied to explore the potential performance of c-BN/diamond FETs. Our work proves that the analytical model is comparable to the TCAD simulation results when <i>u</i><sub><i>a</i></sub> is adopted as − 5.5. The saturation drain current for barrier doping concentration of 2 × 10<sup>18</sup> cm<sup>−3</sup> is as high as 1270 mA/mm for analytical calculation at gate voltage of 4 V. With more barrier doping involved, the drain current can be further improved to 1367 mA/mm with barrier doping density of 5 × 10<sup>18</sup> cm<sup>−3</sup>. This study provides a basis for the future application of c-BN/diamond FETs in large power and high-temperature electronic device fields.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148927876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of quantum nonclassicality enhancing circuit (QNC): compromise among noise figure, gain, and nonclassicality 量子非经典性增强电路的设计：噪声系数、增益和非经典性的折衷

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-08-28 DOI: 10.1007/s10825-026-02630-4

Ahmad Salmanogli

{"title":"Design of quantum nonclassicality enhancing circuit (QNC): compromise among noise figure, gain, and nonclassicality","authors":"Ahmad Salmanogli","doi":"10.1007/s10825-026-02630-4","DOIUrl":"10.1007/s10825-026-02630-4","url":null,"abstract":"<div><p>This study presents the design and analysis of a specialized RF/MW circuit named the Quantum Non-classicality Enhancing Circuit, specifically developed for quantum applications. The primary objective is to reduce the noise figure within the operational frequency range of 4–8 GHz to enhance nonclassical properties in quantum signals. To achieve this, a HEMT was chosen due to its exceptional noise reduction capabilities, which are critical for quantum engineering. While targeting a noise figure of less than 0.065 dB within the specified frequency band, a trade-off with gain was identified. This issue was addressed by introducing additional amplification stages to stabilize the noise figure without compromising overall performance. Quantum analysis of the circuit, based on a simplified HEMT model, provided valuable insights into its nonlinear behavior and the interaction between circuit components and environmental factors. Using the QuTiP toolbox in Python, a time-evolution analysis of the system was conducted, revealing the circuit’s response as an open quantum system under cryogenic conditions. The study also explores the relationship between quantum correlation (measured by quantum discord) and the noise figure, raising significant questions about the impact of noise minimization on enhancing nonclassicality at low temperatures. Alongside the quantum analysis, a detailed circuit layout was designed and optimized to minimize the noise figure. The findings from the quantum analysis demonstrated that nonclassicality generation and noise minimization share a common foundation, reinforcing the design approach. This comprehensive study highlights the complex interplay between circuit design and quantum properties, offering a strategic path toward improved quantum signal processing at cryogenic temperatures.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148838019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance THz-inspired metamaterial sensor with perfect absorption for cancer cell detection 高性能太赫兹启发的超材料传感器，具有完美的吸收，用于癌细胞检测

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-08-27 DOI: 10.1007/s10825-026-02631-3

Pratibha Kumari, Ajeet Kumar

{"title":"High-performance THz-inspired metamaterial sensor with perfect absorption for cancer cell detection","authors":"Pratibha Kumari, Ajeet Kumar","doi":"10.1007/s10825-026-02631-3","DOIUrl":"10.1007/s10825-026-02631-3","url":null,"abstract":"<div><p>In this paper, we propose a highly sensitive terahertz (THz) metamaterial biosensor for detecting cancer-related analytes. The finite element method and frequency- domain solver in the CST Studio Suite are used for analyzing the proposed design. The proposed structure employs gallium arsenide (GaAs) as the substrate material and a gold resonator architecture optimized for the THz frequency range. Unlike previously reported multilayer THz sensors, the proposed single-layer metamaterial sensor achieves absorptivity of 99.99% at a resonance frequency of 2.69 THz, with a maximum figure of merit of 60 RIU<sup><b>−1</b></sup><b>.</b> A high quality factor of 134.50 indicates strong field confinement and sharp resonance behavior while maintaining the simple and fabrication-friendly structure. The analyte layer, representing various cancer-related biomolecules, is modelled by varying its refractive index (RI) to evaluate the sensor’s responsiveness. Significant redshift in the resonant frequency is observed with increasing refractive index, demonstrating excellent sensitivity and facilitating the cancerous cells detection. By changing the RI (1.36 to 1.40), a maximum sensitivity of 1200 GHz/RIU with an average sensitivity of 1040 GHz/RIU is achieved. The sensor attains a high R<sup>2</sup> value of 0.999 with a detection limit of 0.014 RIU. Furthermore, the maximum sensitivity of 1100 GHz/RIU, in addition to the quality factor of 132.95, is observed for basal cells. The use of GaAs enhances the electromagnetic field localization, thus improving sensor performance. Therefore, the proposed biosensor holds great potential for the early-stage identification of various cancer cells<b>,</b> providing a non-invasive, label-free solution for advanced biomedical diagnostics in the THz domain.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148838241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling, validation, and performance analysis of nonlinear dynamics of CMUT membrane CMUT膜非线性动力学建模、验证及性能分析

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-08-26 DOI: 10.1007/s10825-026-02621-5

Avik Ghosh Dastidar, Reshmi Maity, Ramesh Chandra Tiwari, Deepanwita Ghosh, Niladri Pratap Maity

{"title":"Modeling, validation, and performance analysis of nonlinear dynamics of CMUT membrane","authors":"Avik Ghosh Dastidar, Reshmi Maity, Ramesh Chandra Tiwari, Deepanwita Ghosh, Niladri Pratap Maity","doi":"10.1007/s10825-026-02621-5","DOIUrl":"10.1007/s10825-026-02621-5","url":null,"abstract":"<div><p>For a variety of causes, including membrane stretching and electrostatic softening, the membrane of a microelectromechanical system (MEMS)-based capacitive micromachined ultrasonic transducer (CMUT) exhibits nonlinear behavior when vibrating in response to an AC electrical signal over a DC bias. Effects like harmonic distortion, bi-stability, and frequency shifts are brought about by these occurrences. The higher-order modes that result from the deflections caused by nonlinear coupling are frequently difficult for various analytical models, such as lumped-element techniques, to capture. Using the Föppl–von Kármán equation, a dedicated theory for CMUT nonlinear vibrations is developed in this paper. Geometric nonlinearity, viscous damping, and external force are incorporated into a reduced-order Föppl–von Kármán plate equation. The nonlinear partial differential equations are converted into slow-flow amplitude and phase equations that characterize the membrane’s effective modal dynamics using perturbation-based averaging techniques. A CMUT model is developed for FEM simulation and calibrated with experimental data of resonance frequency. It is performed at sub-resonant (50 kHz), near-resonant (100 kHz), and super-resonant (150 kHz) regimes for a substantial period of time. The resulting time-domain displacement responses are then evaluated using Hilbert-transform-based amplitude. The key characteristics seen in FEM data, such as amplitude saturation, resonance detuning, asymmetric displacement envelopes, and sluggish modulation of oscillation amplitude close to resonance, are satisfactorily explained by the analytical model. The envelope modulation and enhanced phase sensitivity were observed near resonance. The analytical model explained the phenomenon as a consequence of nonlinear frequency pulling and the coexistence of stable and unstable fixed points in the amplitude–phase plane.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148837566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advanced photonic crystal-based design for NAND and NOR optical logic gates using spectral domain reconstruction graph neural network 基于谱域重构图神经网络的先进光子晶体NAND和NOR光逻辑门设计

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-08-18 DOI: 10.1007/s10825-026-02624-2

Sweety Julia, Jayam Pradeep Kumar

{"title":"Advanced photonic crystal-based design for NAND and NOR optical logic gates using spectral domain reconstruction graph neural network","authors":"Sweety Julia, Jayam Pradeep Kumar","doi":"10.1007/s10825-026-02624-2","DOIUrl":"10.1007/s10825-026-02624-2","url":null,"abstract":"<div><p>Photonic crystal-based optical logic gates are promising candidates for next-generation all-optical computing because of their high speed, compact size, and low power consumption. However, their practical implementation is often limited by fabrication sensitivity and restricted operational bandwidth. This paper presents an advanced photonic crystal-based design for NAND and NOR optical logic gates using spectral domain reconstruction graph neural network (SDRGNN) and stellar oscillation optimizer (SOO). A square-lattice photonic crystal structure with a photonic bandgap of 1.43–2.14 µm is employed, where waveguides and defect rods are strategically configured to control light propagation and output power. SDRGNN enables reliable all-optical computation by exploiting the photonic crystal’s energy gap and spectral characteristics, while SOO optimizes gate output performance. Simulation results demonstrate stable and accurate logic operations. The NOR gate achieves output intensities of 0.784, 0.052, 0.113, and 0.021 a.u., whereas the NAND gate produces 1.08, 0.556, 0.582, and 0.151 a.u. for different input states. The proposed design also attains a compact footprint of 95 µm and a stabilization time of 0.28 ps. These results confirm the effectiveness of the proposed framework for high-speed, reliable, and scalable photonic computing and optical signal processing applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical confinement-based pixel architecture for enhanced broadband near-infrared sensitivity in CMOS image sensors 提高CMOS图像传感器宽带近红外灵敏度的基于光学约束的像素结构

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-08-16 DOI: 10.1007/s10825-026-02627-z

Mustafa Ozber Yucekul, Mahmud Yusuf Tanrikulu

{"title":"Optical confinement-based pixel architecture for enhanced broadband near-infrared sensitivity in CMOS image sensors","authors":"Mustafa Ozber Yucekul, Mahmud Yusuf Tanrikulu","doi":"10.1007/s10825-026-02627-z","DOIUrl":"10.1007/s10825-026-02627-z","url":null,"abstract":"<div><p>The limited near-infrared (NIR) sensitivity of silicon-based complementary metal–oxide–semiconductor (CMOS) image sensors remains a fundamental constraint for low-light and broadband imaging applications, primarily due to the weak absorption of silicon at longer wavelengths. In this work, an optical confinement-based pixel architecture is proposed to enhance broadband near-infrared (NIR) sensitivity without modifying the material system or increasing the silicon thickness. The design introduces a geometrically engineered light-trapping mechanism that redistributes incident photons, increases their propagation path within the silicon, and suppresses transmission losses at the pixel level. The structure is analyzed using finite-difference time-domain (FDTD) simulations over the 400–1000 nm spectral range and compared with a conventional flat pixel configuration. The results indicate that, while the optical efficiency remains largely unchanged in the visible spectrum, a substantial enhancement is achieved in the near-infrared region. In particular, the optical efficiency reaches up to 0.94 at 1000 nm, corresponding to an enhancement factor of approximately 3.7 compared to the conventional structure. This improvement is attributed to enhanced photon confinement enabled by angular redistribution and multiple internal reflections within the pixel structure. The proposed architecture provides a broadband, fabrication-compatible, and scalable solution for extending the spectral response of CMOS image sensors.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Explicit near-threshold inversion charge solution for III–V MOSFETS within the unified charge control model 统一电荷控制模型下III-V型mosfet的显式近阈值反转电荷解

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-08-16 DOI: 10.1007/s10825-026-02617-1

Tijana Kevkić, Slavica Jovanović, Dragana Todorović, Miljana Milentijević

{"title":"Explicit near-threshold inversion charge solution for III–V MOSFETS within the unified charge control model","authors":"Tijana Kevkić, Slavica Jovanović, Dragana Todorović, Miljana Milentijević","doi":"10.1007/s10825-026-02617-1","DOIUrl":"10.1007/s10825-026-02617-1","url":null,"abstract":"<div><p>In long-channel III–V bulk MOSFETs, inversion charge is commonly described within the Unified Charge Control Model (UCCM) through an implicit nonlinear charge–voltage relation that generally requires numerical solution. In this work, the Homotopy Perturbation Method (HPM), a semi-analytical technique widely used for nonlinear problems in physics, is applied to the normalized UCCM relation in order to derive an explicit approximate solution in the near-threshold regime, where inversion charge control dominates. A third-order closed-form solution is obtained without numerical inversion or additional empirical fitting beyond the standard model parameterization. Compared with the numerical UCCM solution, the HPM-based approximation shows relative errors on the order of 10⁻<sup>6</sup> near threshold. Comparable accuracy is obtained in the corresponding drain–current evaluation in the near-threshold low-<span>({V}_{DS})</span> linear regime. The explicit approximation also enables a significant reduction in computational effort relative to numerical inversion by allowing non-iterative <span>(Oleft(1right))</span> evaluation of the inversion charge. Although demonstrated for long-channel <span>({In}_{0.53}{Ga}_{0.47}As)</span> nMOSFETs, the formulation is general within the UCCM framework and can be extended to other III–V channel materials through appropriate parameter selection.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 5","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148752167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0