波导尺寸对色散和超连续介质中裂芯光波导的影响

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
V. Hitaishi, Jayakrishnan Kulanthaivel, Nandam Ashok
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引用次数: 0

摘要

本文介绍了一种新型硫系光波导的理论研究。波导的核心由两个由平板隔开的d形结构组成。包层是一个矩形板,在其尺寸内包含一个核心。硫族化合物GeAsSe和GeAsS分别被认为是波导的核心和包层。计算了顶部D形岩心半径(D)和与底部岩心右端偏移距离(D)的不同值的色散效应和超连续谱(SC)。SC是通过在3.5µm的中心波长以1kw的峰值功率泵送50fs正割双曲(sech)脉冲产生的。当D = 1.7µm和D = 0.4µm时,光谱宽范围为2.2 ~ 6.5µm。增加‘ d ’可以在牺牲少量展宽的情况下使输出SC光谱强度均匀。这些结果将有助于在近红外到中红外区域制造出均匀强度和广谱的SC光源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of waveguide dimensions on split-core optical waveguide for dispersion and supercontinuum applications

This article presents the theoretical study of a novel chalcogenide optical waveguide. The core of waveguide consists of two D-shaped structures separated by a slab. The cladding is a rectangular slab containing a core within its dimensions. The chalcogenides GeAsSe and GeAsS are considered to be core and cladding of the waveguide, respectively. The dispersion effects and supercontinuum (SC) were calculated for various values of the radius of the top D-shaped core (D) and offset distance (d) from the right end of the bottom core. SC is generated by pumping 50 fs secant hyperbolic (sech) pulses at 1 kW peak power at 3.5 µm as a central wavelength. The maximum wide-spectrum, ranging from 2.2 to 6.5 µm was obtained for D = 1.7 µm and d = 0.4 µm. Increase in ‘d’ leads to a uniform intensity of output SC spectra with sacrificing a small amount of broadening. These results should be useful to create SC sources with uniform intensity as well as broad spectrum in the near to mid-infrared regions.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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