{"title":"Design and performance optimization of a novel perovskite photodetector based on a bipolar heterojunction phototransistor","authors":"Lingyan Lin, Linqin Jiang, Ping Li, Hao Xiong, Shui-Yang Lien, Donyin Chen, Xiaoyuan Lin, Heng Jiang, Baodian Fan, Yu Qiu","doi":"10.1007/s10825-025-02307-4","DOIUrl":null,"url":null,"abstract":"<div><p>Perovskite photodetectors have attracted great interest because of their excellent physical properties and the feasibility of low-cost manufacturing by printing processes. Among various types of photodetectors, phototransistors are usually characterized by superior gain due to their inherent amplification function. In the work, an n-SnO<sub>2</sub>/p-CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>/n-CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> heterojunction bipolar phototransistor is proposed and numerical analyzed with Silvaco TCAD simulator for the first time. The influence of perovskite base and collector doping concentration, base thickness, and SnO<sub>2</sub> emitter doping concentration are investigated to optimize the device performance. The simulation results indicate that properly reducing the perovskite base thickness and doping concentration will greatly enhance the emitter injection efficiency and spectral response. With higher collector doping concentration, the base–collector junction can form a higher electric field, which is conducive to producing a higher spectral response. Moreover, an enhanced emitter injection efficiency can be obtained with a higher SnO<sub>2</sub> emitter doping concentration. Under realistic conditions, the device exhibits excellent performance with a high external quantum efficiency of 1.48 × 10<sup>3</sup>% at 425 nm, a responsivity of 6.8 A/W at 650 nm and a detectivity is 1.63 × 10<sup>14</sup> Jones at 650 nm under a low bias voltage of 0.8 V. Simulation result indicates that the proposed perovskite NPN heterojunction bipolar phototransistor is a promising architecture and will open a new path for the development of high-performance perovskite photodetector.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 2","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-025-02307-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Perovskite photodetectors have attracted great interest because of their excellent physical properties and the feasibility of low-cost manufacturing by printing processes. Among various types of photodetectors, phototransistors are usually characterized by superior gain due to their inherent amplification function. In the work, an n-SnO2/p-CH3NH3PbI3/n-CH3NH3PbI3 heterojunction bipolar phototransistor is proposed and numerical analyzed with Silvaco TCAD simulator for the first time. The influence of perovskite base and collector doping concentration, base thickness, and SnO2 emitter doping concentration are investigated to optimize the device performance. The simulation results indicate that properly reducing the perovskite base thickness and doping concentration will greatly enhance the emitter injection efficiency and spectral response. With higher collector doping concentration, the base–collector junction can form a higher electric field, which is conducive to producing a higher spectral response. Moreover, an enhanced emitter injection efficiency can be obtained with a higher SnO2 emitter doping concentration. Under realistic conditions, the device exhibits excellent performance with a high external quantum efficiency of 1.48 × 103% at 425 nm, a responsivity of 6.8 A/W at 650 nm and a detectivity is 1.63 × 1014 Jones at 650 nm under a low bias voltage of 0.8 V. Simulation result indicates that the proposed perovskite NPN heterojunction bipolar phototransistor is a promising architecture and will open a new path for the development of high-performance perovskite photodetector.
期刊介绍:
he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered.
In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.