Design and performance optimization of a novel perovskite photodetector based on a bipolar heterojunction phototransistor

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Lingyan Lin, Linqin Jiang, Ping Li, Hao Xiong, Shui-Yang Lien, Donyin Chen, Xiaoyuan Lin, Heng Jiang, Baodian Fan, Yu Qiu
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Abstract

Perovskite photodetectors have attracted great interest because of their excellent physical properties and the feasibility of low-cost manufacturing by printing processes. Among various types of photodetectors, phototransistors are usually characterized by superior gain due to their inherent amplification function. In the work, an n-SnO2/p-CH3NH3PbI3/n-CH3NH3PbI3 heterojunction bipolar phototransistor is proposed and numerical analyzed with Silvaco TCAD simulator for the first time. The influence of perovskite base and collector doping concentration, base thickness, and SnO2 emitter doping concentration are investigated to optimize the device performance. The simulation results indicate that properly reducing the perovskite base thickness and doping concentration will greatly enhance the emitter injection efficiency and spectral response. With higher collector doping concentration, the base–collector junction can form a higher electric field, which is conducive to producing a higher spectral response. Moreover, an enhanced emitter injection efficiency can be obtained with a higher SnO2 emitter doping concentration. Under realistic conditions, the device exhibits excellent performance with a high external quantum efficiency of 1.48 × 103% at 425 nm, a responsivity of 6.8 A/W at 650 nm and a detectivity is 1.63 × 1014 Jones at 650 nm under a low bias voltage of 0.8 V. Simulation result indicates that the proposed perovskite NPN heterojunction bipolar phototransistor is a promising architecture and will open a new path for the development of high-performance perovskite photodetector.

基于双极异质结光电晶体管的新型钙钛矿光电探测器的设计与性能优化
钙钛矿光电探测器由于其优异的物理性能和通过印刷工艺低成本制造的可行性而引起了人们的极大兴趣。在各种类型的光电探测器中,光电晶体管由于其固有的放大功能,通常具有优越的增益。本文提出了一种n-SnO2/p-CH3NH3PbI3/n-CH3NH3PbI3异质结双极光电晶体管,并首次在Silvaco TCAD模拟器上进行了数值分析。研究了钙钛矿基极和捕集剂掺杂浓度、基极厚度和SnO2发射极掺杂浓度对器件性能的影响。仿真结果表明,适当降低钙钛矿基体厚度和掺杂浓度,可以大大提高发射极注入效率和光谱响应。集电极掺杂浓度越高,基底-集电极结形成的电场越大,有利于产生更高的光谱响应。此外,SnO2掺杂浓度越高,射极注入效率越高。在实际条件下,该器件在425nm处具有1.48 × 103%的外量子效率,在650nm处具有6.8 a /W的响应率,在650nm处具有1.63 × 1014 Jones的探测率,在0.8 V的低偏置电压下具有优异的性能。仿真结果表明,所提出的钙钛矿NPN异质结双极光电晶体管是一种很有前途的结构,将为高性能钙钛矿光电探测器的发展开辟一条新的道路。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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