Effect of filament regimes in the resistive switching behavior of oxide-based complementary memristor

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-04-01 DOI:10.1007/s10825-025-02306-5

Yunlai Zhu, Junjie Zhang, Xi Sun, Yongjie Zhao, Ying Zhu, Siqi Wang, Jun Wu, Zuyu Xu, Zuheng Wu, Yuehua Dai

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引用次数: 0

Abstract

Oxide-based complementary memristor, derived from standard bipolar device, offers a promising solution to the challenge of sneak path currents in large-scale crossbar arrays. In this work, we investigate the impact of filament regimes on resistive behavior in tantalum oxide-based complementary memristor through finite element simulations. Our results reveal that the memristor exhibits bipolar resistive switching (BRS) characteristics within a voltage range of (-1.6 V, + 1.6 V) and transitions to a complementary resistive switching (CRS) over a broader voltage range (−1.8 V, + 1.8 V). In the CRS regime, increasing the radius of conductive filament (CF) from 5 to 10 nm and decreasing the CF length from 15 to 7.5 nm can enhance the I_on/I_off ratio by 23% and 15%, respectively, due to improved thermal effects. Conversely, reducing the CF radius to 1.2 nm or extending its length to 26 nm diminishes the internal thermal effects, affecting the CF and causing the device to exhibit BRS characteristics. Moreover, decreasing the k_th of electrodes can also improve the I_on/I_off of the complementary memristor. This research advances the understanding of the interconversion between BRS and CRS and offers strategies to improve the performance of complementary memristors.

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.