Effect of filament regimes in the resistive switching behavior of oxide-based complementary memristor

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-04-01 DOI:10.1007/s10825-025-02306-5

Yunlai Zhu, Junjie Zhang, Xi Sun, Yongjie Zhao, Ying Zhu, Siqi Wang, Jun Wu, Zuyu Xu, Zuheng Wu, Yuehua Dai

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引用次数: 0

Abstract

Oxide-based complementary memristor, derived from standard bipolar device, offers a promising solution to the challenge of sneak path currents in large-scale crossbar arrays. In this work, we investigate the impact of filament regimes on resistive behavior in tantalum oxide-based complementary memristor through finite element simulations. Our results reveal that the memristor exhibits bipolar resistive switching (BRS) characteristics within a voltage range of (-1.6 V, + 1.6 V) and transitions to a complementary resistive switching (CRS) over a broader voltage range (−1.8 V, + 1.8 V). In the CRS regime, increasing the radius of conductive filament (CF) from 5 to 10 nm and decreasing the CF length from 15 to 7.5 nm can enhance the I_on/I_off ratio by 23% and 15%, respectively, due to improved thermal effects. Conversely, reducing the CF radius to 1.2 nm or extending its length to 26 nm diminishes the internal thermal effects, affecting the CF and causing the device to exhibit BRS characteristics. Moreover, decreasing the k_th of electrodes can also improve the I_on/I_off of the complementary memristor. This research advances the understanding of the interconversion between BRS and CRS and offers strategies to improve the performance of complementary memristors.

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灯丝形态对氧化物基互补忆阻器阻性开关行为的影响

基于氧化物的互补忆阻器，源自标准双极器件，为大规模交叉栅阵列中潜行路径电流的挑战提供了一个有希望的解决方案。在这项工作中，我们通过有限元模拟研究了灯丝制度对氧化钽基互补忆阻器电阻行为的影响。我们的结果表明,记忆电阻展品双相电阻开关(BRS)特性的电压范围内(-1.6 V, + 1.6 V)和转换到一个互补的电阻开关(CRS)更广泛的电压范围(−1.8 V, + 1.8 V) CRS政权,增加导电纤维(CF)的半径长度从5到10 nm和CF减少从15到7.5纳米离子/ Ioff比可以提高23%和15%,分别将改进的热影响。相反，将CF半径减小到1.2 nm或将其长度延长到26 nm会减小内部热效应，从而影响CF并使器件表现出BRS特性。此外，减小电极的k值也可以提高互补忆阻器的离子/离合。本研究促进了对BRS和CRS之间相互转换的理解，并提供了提高互补忆阻器性能的策略。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.