Journal of Computational Electronics最新文献_第4页

Wave attenuation based on Beer-Lambert law in SiO2/ZrO2, TiO2/MgF2, Si/Al2O3 and Nb2O5/CYTOP one-dimensional photonic crystals 基于Beer-Lambert定律的SiO2/ZrO2、TiO2/MgF2、Si/Al2O3和Nb2O5/CYTOP一维光子晶体中的波衰减

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-08-28 DOI: 10.1007/s10825-025-02407-1

H. Rahimi

{"title":"Wave attenuation based on Beer-Lambert law in SiO2/ZrO2, TiO2/MgF2, Si/Al2O3 and Nb2O5/CYTOP one-dimensional photonic crystals","authors":"H. Rahimi","doi":"10.1007/s10825-025-02407-1","DOIUrl":"10.1007/s10825-025-02407-1","url":null,"abstract":"<div>In this paper, according to the Beer–Lambert law, we present a numerical investigation of wave attenuation in one-dimensional photonic crystals composed of SiO2/ZrO2, TiO2/MgF2, Si/Al2O3 and Nb2O5/CYTOP bilayers deposited on polycarbonate. The wave attenuation characteristics are quantitatively evaluated through optical density (OD) measurements. The simulations were performed using the transfer matrix method implemented in MATLAB for both TE and TM polarizations. The results demonstrate a strong correlation between refractive index contrast (Δn) and photonic bandgap characteristics, where higher Δn values yield broader bandgaps and enhanced attenuation. The numerical analysis reveals that both incidence angle and layer thickness significantly influence the photonic bandgap characteristics, where increasing the angle causes a blue-shift in the bandgap position according to Bragg's law, while varying the layer thickness enables precise tuning of the bandgap width. Significantly, the Si/Al2O3 structure achieves the widest bandgap (1200–1950 nm) and highest optical density (OD = 11.5), while the Nb2O5/CYTOP configuration shows good performance (OD = 10) with potential for flexible photonic devices. Polarization-dependent analysis show that TE waves maintain consistent attenuation at oblique incidence, in contrast to TM waves which show pronounced attenuation loss near Brewster's angle. These findings provide fundamental insights into material selection and structural design for optimizing photonic crystal performance.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144914828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Threshold-controlled and compact microring resonator-based all-optical logic gates for photonic integration 基于阈值控制和紧凑微环谐振器的光子集成全光逻辑门

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-08-25 DOI: 10.1007/s10825-025-02408-0

Vineet Sharma, Mayank Anand, Lokendra Singh

{"title":"Threshold-controlled and compact microring resonator-based all-optical logic gates for photonic integration","authors":"Vineet Sharma, Mayank Anand, Lokendra Singh","doi":"10.1007/s10825-025-02408-0","DOIUrl":"10.1007/s10825-025-02408-0","url":null,"abstract":"<div>This work presents the design and simulation of all-optical logic gates using microring (MR) resonator structures for integrated photonic applications. Ring resonators (RR) offer wavelength-selective filtering through resonance, enabling them to perform logic operations by controlling the coupling and interference of optical signals. The proposed structure consists of an MR coupled to dual straight bus waveguides in an add-drop configuration. Binary logic is implemented by analyzing the output optical intensity under varying input conditions, using specific threshold values to distinguish logic states. For both the logic gates, output intensity equal to or greater than 50% is considered logic ‘1’. Simulation results confirm that the MR structure accurately performs logic functions based on the constructive or destructive interference of the input signals within the resonator. Logical outputs are derived by comparing the transmitted optical power at the drop port against the defined thresholds. The device exhibits a compact footprint, and a fast response time, making it suitable for integration into photonic circuits. The implementation does not require any external tuning mechanisms, such as thermal or electro-optic control; the system still relies on sufficient optical input power to achieve nonlinear behavior. This work emphasizes the feasibility of using RR-based designs for compact, reconfigurable, and high-speed optical computing elements. It provides a foundation for future developments in all-optical integrated logic systems.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144897078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring dielectric relaxation and AC conductivity of layered double hydroxides 探索层状双氢氧化物的介电弛豫和交流电导率

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-08-22 DOI: 10.1007/s10825-025-02401-7

Abderrahmane Elmelouky, Hairch Youssef, Kholood A. Dahlous, Mohammad Shahidul Islam, Nivedita Acharjee, Mohammed Salah, Ahmed Mohamed Tawfeek

{"title":"Exploring dielectric relaxation and AC conductivity of layered double hydroxides","authors":"Abderrahmane Elmelouky, Hairch Youssef, Kholood A. Dahlous, Mohammad Shahidul Islam, Nivedita Acharjee, Mohammed Salah, Ahmed Mohamed Tawfeek","doi":"10.1007/s10825-025-02401-7","DOIUrl":"10.1007/s10825-025-02401-7","url":null,"abstract":"<div>In this study, we present impedance spectroscopy measurements on Zn–Al layered double hydroxides (LDH) with chloride (Cl−) as the interlayer anion and a Zn/Al molar ratio of 2:1. Electrical properties, including conductivity, modulus, and dielectric permittivity, were examined over a temperature range of 298–363 K and a frequency (F) range of 200 Hz to 1 MHz. Our findings indicate that electrode polarization significantly influences the relaxation processes within the material. Peaks observed in the imaginary components of permittivity and modulus suggest the presence of relaxing dipoles, with these peaks shifting to higher frequencies as temperature increases, implying a reduction in relaxation time. The AC conductivity generally adheres to Jonscher’s universal power law, with minor deviations. The distinct activation energies obtained confirm that the transport mechanism in this compound is not governed by simple hopping. To further elucidate the conduction mechanism, we applied the non-overlapping small polaron tunneling model, which provides a quantum mechanical framework for understanding the AC conductivity and its F dependence. These findings contribute to a deeper understanding of the electrical behavior of LDH materials, which can be crucial for optimizing their performance in applications such as energy storage, electronics, and potentially in the development of advanced materials for solar cells.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Suppression of ambipolarity without compromising delay using drain-side lateral heterojunction for future TFETs 在不影响延迟的情况下利用漏极侧异质结抑制双极性

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-08-18 DOI: 10.1007/s10825-025-02402-6

Sayani Ghosh, Priyajit Mukherjee, Hafizur Rahaman

引用次数: 0

A study on the influence of temperature on the output parameters of silicon heterojunction solar cells 温度对硅异质结太阳能电池输出参数影响的研究

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-08-15 DOI: 10.1007/s10825-025-02400-8

Sharifa B. Utamuradova, Evgeniy I. Terukov, Omonboy K. Ataboev, Irina E. Panaiotti, Artem I. Baranov, Oleg P. Mikhaylov

{"title":"A study on the influence of temperature on the output parameters of silicon heterojunction solar cells","authors":"Sharifa B. Utamuradova, Evgeniy I. Terukov, Omonboy K. Ataboev, Irina E. Panaiotti, Artem I. Baranov, Oleg P. Mikhaylov","doi":"10.1007/s10825-025-02400-8","DOIUrl":"10.1007/s10825-025-02400-8","url":null,"abstract":"<div>This work is devoted to the investigation of the influence of temperature on the output parameters of heterojunction solar cells based on n-type crystalline silicon in the range of 173–373 K under AM0 spectrum (136.7 mW/cm2). Experimental results revealed an s-shaped light current–voltage characteristics near the open-circuit voltage at low temperatures, which leads to a reduction in fill factor and conversion efficiency of heterojunction solar cells. The short-circuit current density was found to increase linearly with temperature, exhibiting a positive temperature coefficient of + 0.055%/K. The temperature dependence of the open-circuit voltage displayed more complex behavior: Its value decreased slowly between 173 K and 233 K, followed by a linear decrease at a higher rate above 233 K, characterized by a negative temperature coefficient of− 0.23%/K. The theoretically derived temperature dependence of the open-circuit voltage showed good agreement with the experimental data. Both the maximum output power and conversion efficiency of the heterojunction solar cells initially increased linearly with rising temperature from 173 K, reaching peak values of 25.2 mW/cm2 and 18.53% at 233 K. However, with further temperature increase up to 373 K, both parameters decreased linearly. The maximum output power of the heterojunction solar cells exhibited two different negative temperature coefficients: − 0.15%/K in the range of 173–233 K and − 0.31%/K in the range of 273–373 K.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144853577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modelling of a two-port patch antenna with metasurface absorber using machine learning algorithms 基于机器学习算法的双端口贴片天线超表面吸收器建模

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-08-14 DOI: 10.1007/s10825-025-02399-y

Neha K. Saini, Anand Vardhan Bhalla, Ashish Bagwari, Ravitesh Mishra, Ch. Anil Kumar

引用次数: 0

Optimized dielectric-plasmonic interfaces for long-range surface plasmon resonance sensors 远距离表面等离子体共振传感器的优化介电-等离子体界面

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-08-13 DOI: 10.1007/s10825-025-02403-5

Rajeev Kumar, Shivam Singh, Rachana Arya, Mayank, Abdullah Saad Alsubaie, Amrindra Pal, Arshdeep Singh, Lalit Garia

{"title":"Optimized dielectric-plasmonic interfaces for long-range surface plasmon resonance sensors","authors":"Rajeev Kumar, Shivam Singh, Rachana Arya,  Mayank, Abdullah Saad Alsubaie, Amrindra Pal, Arshdeep Singh, Lalit Garia","doi":"10.1007/s10825-025-02403-5","DOIUrl":"10.1007/s10825-025-02403-5","url":null,"abstract":"<div>In this seminal work, we propose a novel-guided wave long-range surface plasmon resonance (GW-LRSPR) sensor. The multilayer sensor structure combines 2S2G prism, cytop, BaTiO3, and silver (Ag). The inclusion of barium titanate (BaTiO3: perovskite material), a material with high permittivity and piezoelectric properties, significantly enhances the imaging sensitivity (Simag) of the proposed GW-LRSPR sensor as it allows for the tuning of the plasmonic response through electrical or mechanical stimuli. Additionally, the use of a Cytop layer as an insulating and protective dielectric layer further enhances the sensor’s durability and optical performance. By incorporating the BaTiO3 layer, the sensor achieves a maximum Simag of 73,031 RIU−1, significantly higher than the 44,542 RIU−1 obtained without the layer. Hence, the GW-LRSPR sensor demonstrated strong capability in analyte detection. The sensor also exhibits a figure of merit (FoM) of 7.3 × 106 RIU−1, with detection accuracies (DA) of 169.49/° and 185.18/° for the LRSPR and GW-LRSPR sensors, respectively. Overall, the proposed GW-LRSPR sensor improves imaging sensitivity by nearly 64% compared to the LRSPR sensor.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144832316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spontaneous emission spectra of GaAsBi/GaAs double quantum well structures GaAsBi/GaAs双量子阱结构的自发发射光谱

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-08-13 DOI: 10.1007/s10825-025-02397-0

DongFeng Liu

{"title":"Spontaneous emission spectra of GaAsBi/GaAs double quantum well structures","authors":"DongFeng Liu","doi":"10.1007/s10825-025-02397-0","DOIUrl":"10.1007/s10825-025-02397-0","url":null,"abstract":"<div>This study systematically investigates the spontaneous emission spectra of GaAs1-xBix/GaAs double quantum wells (DQWs) through an eight-band k•p model, elucidating the dependence of the emission characteristics across varying well widths, barrier thicknesses, Bi compositions, doping densities, and temperatures. The emission peak intensity decreases and redshifts with increasing well-width due to weakened quantum confinement, with DQWs showing a more gradual intensity decay than SQWs. The GaAs barrier thickness of the DQWs is found to affect minimally the spontaneous emission spectra, but a GaAs0.95Bi0.05/GaAs DQW, where the interwell barrier is a GaAs0.99Bi0.01 barrier layer, demonstrates the tunability of the emission intensity with varying barrier thickness. Varying the Bi composition in the GaAs1-xBix wells of the DQWs shows invariant peak intensity across low compositions (0.01–0.05) and a pronounced redshift over 30 meV. On the other hand, simultaneous variation of Bi compositions in both wells enables a monotonic redshift. This shows a method to realize a broadband frequency tunability. A thicker interwell GaAs1-xBix barrier layer, for a specified Bi composition, can result in a relatively larger redshift. Increased carrier density boosts peak intensity. As the temperature increases, the peak intensity decreases, and the peak position undergoes a redshift. Notably, DQWs exhibit slower decay rates at high energies compared to SQWs. Furthermore, under equivalent confinement conditions, DQWs demonstrate superior emission rates relative to SQWs.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144832270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Multifunctional coding metasurfaces based on polarization and propagation direction 基于极化和传播方向的多功能编码元曲面

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-08-13 DOI: 10.1007/s10825-025-02392-5

Mingxiu Han, Song Tian, Juan Xu

{"title":"Multifunctional coding metasurfaces based on polarization and propagation direction","authors":"Mingxiu Han, Song Tian, Juan Xu","doi":"10.1007/s10825-025-02392-5","DOIUrl":"10.1007/s10825-025-02392-5","url":null,"abstract":"<div>With the continuous research on electromagnetic (EM) metasurfaces, it has been found that a variety of EM modulation functions can be realized by polarization multiplexing and frequency multiplexing, thus forming multifunctional EM metasurfaces. However, the inherent property of EM wave propagation direction has not been effectively utilized to realize multifunctional EM devices that depend on propagation direction. Here, a multifunctional coding metasurface is proposed based on Fourier convolution operation that can achieve different functions in opposite propagation directions. As a proof of concept, the proposed multifunctional metasurface is capable of achieving orbital angular momentum (OAM) beam with mode number l = 1 and divergence angle ± 6° in the upper half-space when a circularly polarized EM wave at 13 GHz is incident. On top of this the Fourier convolution operation is superimposed to achieve anomalous reflection of the OAM beam and OAM beam splitting. When X-polarized EM wave at 12.2 GHz is incident, beam splitting can be achieved in the lower half-space. The experimental results are in good agreement with the numerical results, and this multifunctional metasurface provides a new way for the development of new multifunctional devices and paves the way for their use in other fields such as antennas and communications.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144832269","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design-driven efficiency enhancement of CdTe1−xSex solar cells via interface band alignment and optimization 设计驱动的CdTe1−xSex太阳能电池的界面带对准和优化效率提高

IF 2.5 4区工程技术

Journal of Computational Electronics Pub Date : 2025-08-07 DOI: 10.1007/s10825-025-02394-3

Hichem Bencherif, Ziyad Younsi, Faycal Meddour, Mohamed Abbas, Shaeen Kalathil, Tarek Hidouri, Latha Marasamy, Ponnusamy Sasikumar

{"title":"Design-driven efficiency enhancement of CdTe1−xSex solar cells via interface band alignment and optimization","authors":"Hichem Bencherif, Ziyad Younsi, Faycal Meddour, Mohamed Abbas, Shaeen Kalathil, Tarek Hidouri, Latha Marasamy, Ponnusamy Sasikumar","doi":"10.1007/s10825-025-02394-3","DOIUrl":"10.1007/s10825-025-02394-3","url":null,"abstract":"<div>This study develops a comprehensive optical–electrical model to identify the efficiency-limiting mechanisms in CdTe1−xSex solar cells. The aim is to provide a unified understanding of how various recombination pathways, tunneling-enhanced, Auger, Shockley–Read–Hall (SRH), interface, and non-radiative recombination, collectively impact device performance. While prior research typically focuses on isolated mechanisms, our integrated approach reveals their combined influence on efficiency losses. The model shows strong agreement with experimental data and serves as a fitness function for a multi-objective genetic algorithm (MOGA), enabling systematic optimization of device parameters. Our results identify Ga2O3 as a promising Cd-free ETL, achieving an optimized efficiency of 25.8%, with JSC = 24.93 mA/cm2, VOC = 1.27 V, and FF = 80.28%. These findings offer valuable insights into degradation mechanisms and provide a pathway for designing high-performance, environmentally friendly CdTe1-xSex solar cells.</div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145163100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0