Journal of Computational Electronics最新文献

{"title":"Segment-wise local adiabatic design for compact photonic mode-evolution devices","authors":"Junyu Qiu,&nbsp;Yihang Yan,&nbsp;Jiarui Zhang,&nbsp;Jin Zhang,&nbsp;Wenxi Zhou,&nbsp;Baiyu Wang,&nbsp;Tu-Lu Liang","doi":"10.1007/s10825-026-02620-6","DOIUrl":"10.1007/s10825-026-02620-6","url":null,"abstract":"<div><p>Adiabatic mode evolution is widely employed in integrated photonic devices because of its broadband operation and tolerance to fabrication variations. In practice, however, adiabatic structures are often designed using heuristic geometric profiles, which can lead to unnecessarily long device footprints. This difficulty is closely related to the asymptotic dependence of transmission efficiency on device length, which makes unconstrained efficiency maximization ineffective for practical compact design synthesis. In this work, we present a segment-wise locally constrained design framework for compact adiabatic photonic devices. The method reformulates adiabatic design as a sequential construction problem in which a prescribed global transmission target is enforced through spatially distributed local coupling constraints. To quantify these constraints, we introduce the maximum mode-connection loss fraction, a phase-insensitive local metric that relates transmission requirements to segment-wise admissibility conditions. Based on this formulation, device geometries are generated through a deterministic map-and-solve procedure, where each segment is constructed near its admissible coupling boundary under the specified performance constraint. The proposed framework provides an explicit computational workflow for determining compact geometry evolution without relying on predefined global taper parameterizations. The method is validated using representative photonic components including tapers, mode converters, and directional couplers. Compared with conventional globally parameterized designs under identical transmission targets, the proposed approach consistently achieves substantial footprint reduction, with reductions of up to ~ 80% observed in strongly non-uniform coupling regimes. Additional studies further demonstrate the influence of spatial discretization and local constraint allocation on achievable device compactness. These results establish a practical numerical framework linking local coupling constraints to compact adiabatic device synthesis and provide a systematic design methodology compatible with standard simulation tools such as EME and FDTD.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148782130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction: Driftfusion: an open source code for simulating ordered semiconductor devices with mixed ionic-electronic conducting materials in one dimension","authors":"Philip Calado,&nbsp;Ilario Gelmetti,&nbsp;Benjamin Hilton,&nbsp;Mohammed Azzouzi,&nbsp;Jenny Nelson,&nbsp;Piers R. F. Barnes","doi":"10.1007/s10825-026-02618-0","DOIUrl":"10.1007/s10825-026-02618-0","url":null,"abstract":"","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148751749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-sensitivity grated D-shaped Au–SnSe₂ SPR fiber-optic sensor for temperature detection using Bayesian regularized neural networks","authors":"Rahul Rahul,&nbsp;Jaisingh Thangaraj","doi":"10.1007/s10825-026-02622-4","DOIUrl":"10.1007/s10825-026-02622-4","url":null,"abstract":"<div><p>Conventional optical-fiber temperature sensors often suffer from limited sensitivity, narrow dynamic range, and reliance on manual spectral interpretation without intelligent predictive integration. To address these limitations, we propose a grated D-shaped fiber-based SPR sensor for temperature sensing application. We used gold (Au) and tin selenide (SnSe₂) as the sensing layers. The analyte we have chosen is ethanol–chloroform solution with 50–50% and 60–40%, respectively. We varied the temperature (T) from 0 to 100 °C with 10 °C intervals. This work makes two main contributions: First, it optimizes the structure of the Au/SnSe₂ grating-assisted D-shaped configuration and analyzes its practical feasibility, including a study of how a ± 2% fabrication tolerance affects performance. Second, it introduces a machine learning framework that compares with various models: Bayesian Regularized Artificial Neural Network (BRANN), Kolmogorov–Arnold Network (KAN), Gaussian Process Regression (GPR), XGBoost, CatBoost etc., to automatically and accurately predict resonance wavelength (RW) and temperature sensitivity (TS) for the range 0–100 ⁰C. We got the best performance with the BRANN model with mean absolute percentage error (MAPE) of 0.009985%. We achieved a maximum TS of around 12 nm/°C for both concentration variations, manually. The maximum value of the figure of merit (FOM) was 0.132°C⁻¹ for 50–50% solution and 0.137 °C⁻¹ for 60–40% solution, respectively. It provides a promising platform for high-sensitivity temperature monitoring in applications requiring compact size, high immunity to electromagnetic interference, and optical remote sensing.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148751640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical design and optimization of a black phosphorus-BiFeO3 multilayer SPR sensor for enhanced refractive index sensing toward anemia diagnosis","authors":"Debashish Pal,&nbsp;Arijit De,&nbsp;Prithviraj Singh Chouhan,&nbsp;Subhankar Shome,&nbsp;Manoj Sharma,&nbsp;M. Chethan,&nbsp;Helen Merina Albert,&nbsp;Tapasmini Sahoo,&nbsp;Anita Gehlot,&nbsp;Amrindra Pal","doi":"10.1007/s10825-026-02619-z","DOIUrl":"10.1007/s10825-026-02619-z","url":null,"abstract":"<div><p>This research details the design and optimization of a surface plasmon resonance (SPR) biosensor with enhanced sensitivity, achieved through the implementation of multilayer heterostructures comprising black phosphorus (BP), BaTiO₃ and BiFeO₃. SPR sensors are vital for label-free biomolecule detection due to their high sensitivity and real-time monitoring capabilities, but traditional designs often suffer from limited field confinement and suboptimal sensitivity. Addressing these limitations, we propose innovative configurations based on a BK7 prism coupled with Ag/Dielectric/Ag/BP multilayers. The reflectivity and sensitivity of each configuration were assessed using the transfer matrix method, with variations in silver and dielectric layer thicknesses. The results demonstrate that the incorporation of BP significantly improves field confinement, resulting in sharper resonance dips and more pronounced resonance angle shifts, especially when combined with BiFeO₃. The BK7/ Ag(55 nm)/ BiFeO₃(4 nm)/ Ag(1 nm)/ BP(1 nm) sensor exhibited the highest sensitivity, reaching 350.44°/RIU, exceeding that of the BaTiO₃-based sensor (305.38°/RIU). Further investigation showed that increasing the BP layer thickness and the refractive index of the sensing medium, like blood, further boosted the sensor’s sensitivity, reaching values exceeding 520°/RIU for the BiFeO₃-based sensor. This enhanced performance is attributed to BP’s outstanding optoelectronic properties, including high carrier mobility and strong light-matter interaction. These results highlight the critical role of BP in improving SPR biosensor performance, making it a highly promising material for precise, label-free detection of biomolecules, in clinical diagnostics and environmental monitoring applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148751334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bridging the gap between heterocyclic rings and pyrene-based chromophores for optoelectronic applications","authors":"Shamsa Bibi,&nbsp;Irfa Areej,&nbsp;Shabbir Muhammad,&nbsp;Shafiq urRehman,&nbsp;Abdullah G. Al-Sehemi,&nbsp;Aijaz Rasool Chaudhry,&nbsp;Abdul Qayyum Khan","doi":"10.1007/s10825-026-02615-3","DOIUrl":"10.1007/s10825-026-02615-3","url":null,"abstract":"<div><p>Nonlinear optical (NLO) materials are a foundation of future photonics and optoelectronics technologies and their advancements in high-speed communications, ultrafast signal processing, and sophisticated light–matter interaction. In this study, a series of novel 2,7-disubstituted pyrene-based derivatives were systematically designed by incorporating various heterocyclic fragments such as thiophene, furan, thiazole, benzothiazole, oxazole, benzoxazole, phenyl, and pyridine at the 2 and 7 positions of the pyrene core based on two topologies, A–π‒A and D‒π‒D. The designed systems, including DT-P, DF-P, DTZ-P, DZ-P, BDZ-P, BDTZ-P, DPH-P, and DPYR-P, were studied employing the M06-2X functional with the 6-311G** basis set by applying density functional theory (DFT) to analyze their charge transfer, optoelectronic, and NLO responses. DFT calculations determine the lowest transition energy of 3.550 eV for BDTZ-P, indicating good optoelectronic properties. Frontier molecular orbital (FMO) analysis indicates that BDTZ-P has the lowest HOMO–LUMO energy gap (5.547 eV), which agrees with its effective charge transfer and NLO behavior. BDTZ-P displays a redshift according to UV–visible outcomes, with <i>λ</i>_max indicating the maximum absorption wavelength at 293 nm. Vibrational spectra show strong bands at 1386 cm⁻¹ (C=N) and 1066 cm⁻¹ (C–S); the observed redshift is attributed to sulfur substitution. This broad study highlights the potential of pyrene-based chromophores in photonic and optoelectronic applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148751081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"From microstructure to instability: a multimodal data-driven workflow for leakage-aware screening of memristive devices","authors":"Saba Zamankhani,&nbsp;Hauke Honig,&nbsp;Michaela Blum,&nbsp;Eric Troebs,&nbsp;Peter Schaaf,&nbsp;Kai-Uwe Sattler","doi":"10.1007/s10825-026-02611-7","DOIUrl":"10.1007/s10825-026-02611-7","url":null,"abstract":"<div><p>Stress-induced microstructural and interfacial changes are widely implicated in the electrical instability of memristive devices, yet they are rarely quantified within a single leakage-aware predictive framework. Here we present a proof-of-concept small-data study that integrates registered pre- and post-stress SEM differencing, DC current–voltage hysteresis descriptors, and illumination-sensitive electrochemical impedance spectroscopy features to predict a device-level electrical instability proxy. All analyses are performed using strict device- and batch-aware grouping to prevent cross-device leakage and to evaluate cross-batch generalization. Multimodal fusion improves predictive performance relative to single-modality baselines under device-grouped validation, whereas leave-one-batch-out analysis reveals heterogeneous transfer across fabrication batches. Grouped permutation testing and bootstrap uncertainty estimates support a modest average cross-batch benefit while highlighting substantial fabrication-dependent domain shift. Feature attribution identifies complementary predictive signals across modalities: SEM texture and Fourier descriptors summarize stress-associated image changes, DC metrics capture switching asymmetry, and impedance phase features reflect illumination-sensitive interfacial response. These attributions are interpreted as physically motivated, hypothesis-generating indicators rather than direct evidence of unique causal mechanisms. Together, these results establish a reproducible workflow for instability-oriented screening and batch-level process assessment in memristive materials, while defining a small-data benchmark for future validation against direct reliability endpoints.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-026-02611-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148750930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multivariate comparison of CdTe- and CIGS-based thin-film solar cell efficiencies under intraday temperature, humidity, and cloudiness conditions","authors":"Mehmet Fatih Gözükızıl","doi":"10.1007/s10825-026-02616-2","DOIUrl":"10.1007/s10825-026-02616-2","url":null,"abstract":"<div><p>This study aims to investigate the performance of CdTe and CIGS thin film solar cells using atmospheric conditions (temperature: 17.3–39.3 °C; mean 27.3 °C; relative humidity: 21–94%; mean 58.1%; cloudiness) and spectral data in the range of 300–900 nm measured at 08:00, 11:00, 13:00, 15:00 and 18:00 every day during June. The efficiency values ranged between 2.55−16.87% for CdTe cells and 7.19−16.48% for CIGS cells. During the day, the lowest efficiencies were measured at 08:00 am, under high humidity and low irradiance, with an average of 5.28% (CdTe) and 8.94% (CIGS), respectively. At 13:00, when the spectral intensity reached its maximum, the CdTe efficiency increased to an average of 12.95% and the CIGS efficiency to an average of 13.87%. At 15:00, the temperature averaged at 33.8 °C, CdTe was 11.27% and CIGS 12.74%; at 18:00, with decreasing irradiance and increasing cloudiness, CdTe was 8.26% and CIGS 10.80%. At 13:00 on 12 June, it increased to 16.87% and 16.48%. The average temperature at 13 h and 15 h was 31.9 °C and 34.1 °C, respectively. The average temperature jump of 6.5 percent reduced the efficiencies of CdTe and CIGS-based solar cells by 12.97% and 8.14%, respectively. Correlation analyses revealed correlations between temperature and efficiency and between humidity and efficiency. The correlation between CdTe and CIGS efficiencies is high (r=0.996, p&lt;0.001). Both cell types respond similarly to environmental variables. One-way ANOVA revealed a significant effect of cloudiness on both cell efficiencies (p&lt;0.001), while two-way ANOVA revealed independent effects of both time and cloudiness. A comparative study of the efficiencies of CdTe- and CIGS-based thin film solar cells under varying environmental conditions (time of day, temperature, humidity and cloudiness) showed that CdTe cells maintained their performance at high temperature and steep sun angles, while CIGS cells maintained their performance at low irradiance and high relative humidity. The highest efficiency values recorded during the peak hours of the day (11:00-15:00) were confirmed to be in line with the standard AM1.5G reference conditions. The development of optimisation strategies based on regional climate data can improve solar energy efficiency and reliability.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148750556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical modeling ionic transport and LiPF6 dissociation in lithium-ion battery electrolytes: a one-dimensional approach","authors":"Oulmi Kafia,&nbsp;Djaraoui Afaf,&nbsp;Haddad Djamel","doi":"10.1007/s10825-026-02612-6","DOIUrl":"10.1007/s10825-026-02612-6","url":null,"abstract":"<div><p>While conventional models often assume fully dissociated electrolytes, this article presents a one-dimensional mathematical model to explicitly investigate LiPF₆ salt dissociation effects on Li⁺ transport in lithium-ion batteries through a parametric sensitivity analysis following the established theoretical framework of Danilov et al. [1]. The model incorporates diffusion and migration using the Nernst–Planck approach under electroneutrality, excluding convection, serving as an optimized baseline framework to resolve nonlinear LiPF₆ dissociation and recombination kinetics. By treating the equilibrium dissociation fraction (<i>δ</i>) as an independent control parameter to simulate varying electrolyte formulations, we examine the dynamic impact of applied currents on lithium-ion and undissociated salt profiles. Results quantitatively show that <span>(delta)</span> between 0.7 and 0.85 ensures efficient ion transport, with <span>(delta =0.8)</span> yielding a nearly uniform distribution and extended discharge time at 0.667 A. Conversely, low dissociation <span>(left(delta le 0.3right))</span> severely limits ion transport, causing strong concentration gradients at anode/electrolyte and electrolyte/cathode interfaces, leading to premature, incomplete discharge. Furthermore, temporal analysis reveals migration dominates early discharge, with diffusion progressively homogenizing concentrations. Ultimately, this model provides a detailed understanding of dynamic ion transport mechanisms, offering a theoretical quantitative tool to optimize electrolyte conditions and mitigate polarization in high-rate lithium-ion battery performance.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148614937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A graphene-based dual-gate ISFET with circuit-level integration for high-sensitivity and wide-range pH sensing: design and simulation study","authors":"Ahmed Harb,&nbsp;Mustafa Istanbullu","doi":"10.1007/s10825-026-02614-4","DOIUrl":"10.1007/s10825-026-02614-4","url":null,"abstract":"<div><p>This study presents the design and simulation of a graphene-channel, aluminum oxide sensing, dual-gate ISFET architecture integrated with a differential analog readout circuit for wide-range <span>(text{p}text{H})</span> sensing applications. The system was evaluated using a combination of TCAD-based physical device modeling and Verilog-A-level circuit co-simulation to capture both device physics and system-level behavior. Simulations were conducted across the full <span>(text{p}text{H})</span> spectrum from 1 to 14, and the sensor exhibited a monotonic current response with an average sensitivity of <span>(1063 ;text{m}text{V}/text{p}text{H})</span>. The local sensitivity varied from <span>(-606)</span> to <span>(-1455 ;text{m}text{V}/text{p}text{H})</span>, while the linearity of the output was confirmed with a coefficient of determination of <span>({R}^{2}=0.984)</span>. Unlike many previously reported ISFET designs that offer high sensitivity over limited <span>(pH)</span> intervals, the proposed sensor maintains consistently high transduction performance across acidic, neutral, and alkaline ranges. The integration of a graphene channel and <span>({text{Al}}_{2}{text{O}}_{3})</span> sensing membrane, combined with dual-gate capacitive control and a custom analog readout stage, enables strong signal amplification and wide-range operability. These features, along with full-system modeling and validation, position the proposed design as a promising platform for future experimental realization in portable, wearable, or lab-on-chip bio sensing applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148614800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Developing an ultimate 3D NAND flash memory simulation environment for operation and optimization","authors":"Jooyoung Lee,&nbsp;Jinil Yoo,&nbsp;Hyungcheol Shin","doi":"10.1007/s10825-026-02613-5","DOIUrl":"10.1007/s10825-026-02613-5","url":null,"abstract":"<div><p>In this study, we optimize the reprogram scheme in program operation of a 3D NAND flash memory based on device-level simulations. To enhance the reliability during program operation, it is crucial to reduce the width of the threshold voltage (V_th) distribution. For this purpose, commonly used schemes in industrial practice, such as incremental step pulse programming (ISPP) and reprogram, are incorporated. The simulations utilize a physical device model and statistically consider key variability sources, including electron injection spread (EIS), random telegraph noise (RTN), and Z-interference. Furthermore, the impact of short-term retention caused by rapid electron loss in the charge trap layer (CTL) is included in program simulation and analyzed. Results of simulation are calibrated using machine learning-based data fitting. Finally, using this simulation framework, the optimization identifies conditions that minimize the V_th distribution width without degrading other device characteristics, using interpolation in distribution width contour. The proposed approach is quantitatively compared with conventional methods, demonstrating significant improvement.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-026-02613-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148614936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}