Modeling of effective mobility in 3D NAND flash memory with polycrystalline silicon channel

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-02-28 DOI:10.1007/s10825-025-02293-7

Juhyun Kim, Hyungcheol Shin

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引用次数: 0

Abstract

In this paper, based on exponentially distributed trap density of states (DOS) for grain boundary, a solution to effective mobility (μ_eff) is derived. Within the model, an effective width of grain boundary (GB) depletion region (L_GB.eff) and drain induced grain barrier lowering effect on GB barrier height (ψ_B), is considered. The μ_eff model is then verified with μ_eff extracted from simulation. To this end, a computer aided design simulation is calibrated against the experimental data and μ_eff is then calculated from the simulated channel current. The μ_eff model is compared with calculated μ_eff to validate the model and a good agreement between them is achieved. In addition, we also investigate the dependence of μ_eff on GB DOS parameters and device temperature. The same validation process is also performed at various GB locations and angles to analyze the effect of GB shape on μ_eff.

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.