Modeling of effective mobility in 3D NAND flash memory with polycrystalline silicon channel

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-02-28 DOI:10.1007/s10825-025-02293-7

Juhyun Kim, Hyungcheol Shin

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Abstract

In this paper, based on exponentially distributed trap density of states (DOS) for grain boundary, a solution to effective mobility (μ_eff) is derived. Within the model, an effective width of grain boundary (GB) depletion region (L_GB.eff) and drain induced grain barrier lowering effect on GB barrier height (ψ_B), is considered. The μ_eff model is then verified with μ_eff extracted from simulation. To this end, a computer aided design simulation is calibrated against the experimental data and μ_eff is then calculated from the simulated channel current. The μ_eff model is compared with calculated μ_eff to validate the model and a good agreement between them is achieved. In addition, we also investigate the dependence of μ_eff on GB DOS parameters and device temperature. The same validation process is also performed at various GB locations and angles to analyze the effect of GB shape on μ_eff.

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基于多晶硅通道的3D NAND闪存有效迁移率建模

本文基于晶界的指数分布阱态密度（DOS），导出了有效迁移率（μeff）的解。模型中考虑了晶界耗竭区有效宽度（GB .eff）和排水引起的晶界屏障降低对晶界屏障高度（ψB）的影响。然后用仿真中提取的μeff对模型进行验证。为此，根据实验数据进行了计算机辅助设计模拟，并根据模拟的通道电流计算μeff。将仿真得到的μeff模型与计算得到的μeff进行了比较，验证了模型的正确性。此外，我们还研究了μeff与GB DOS参数和器件温度的关系。同样的验证过程也在不同的GB位置和角度进行，以分析GB形状对μeff的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.