Modelling and simulation of TSV considering void and leakage defects

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-03-13 DOI:10.1007/s10825-025-02300-x

Chao Liu, Gang Dong, Changle Zhi, Zhangming Zhu

引用次数: 0

Abstract

Through-silicon-via (TSV) technology represents a significant advancement in the fabrication of three-dimensional (3D) integrated circuits, enabling the vertical interconnection of chips. This process results in several defects that impact the signal transmission performance of TSVs. This study establishes a unified equivalent circuit model that includes leakage defect TSV, void defect TSV, and defect-free TSV, using a distributed modelling approach. The established equivalent circuit model is then simulated, and its accuracy is confirmed by comparing the S-parameter values with those from 3D electromagnetic simulator simulations. The impact of defects on the transmission performance of TSV signals was investigated by varying the dimension of the leakage factor, the position of the leakage defects, and the voiding factor and void defect position. Additionally, the impact of the coexistence of void and leakage defects on TSV signal transmission performance is investigated.

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考虑空隙和泄漏缺陷的TSV建模与仿真

通过硅通孔（TSV）技术代表了三维（3D）集成电路制造的重大进步，使芯片的垂直互连成为可能。这一过程产生了一些缺陷，影响了tsv的信号传输性能。本研究采用分布式建模方法，建立了包括泄漏缺陷TSV、空隙缺陷TSV和无缺陷TSV在内的统一等效电路模型。然后对所建立的等效电路模型进行了仿真，并将s参数值与三维电磁模拟器仿真结果进行了比较，验证了该等效电路模型的准确性。通过改变泄漏因子的尺寸、泄漏缺陷的位置以及空隙因子和空隙缺陷的位置，研究了缺陷对TSV信号传输性能的影响。此外，还研究了空隙和泄漏缺陷共存对TSV信号传输性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.