用于28.3 THz能量收集的v形整流天线的特性

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Aboubacar Savadogo, Thomas Nyachoti Nyangonda, Bernard Odhiambo Aduda, Uli Lemmer, Mohamed Hussein
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引用次数: 0

摘要

介绍了一种基于潜在可打印v形纳米天线设计的整流天线结构,并进行了数值分析。通过电场增强和辐射效率作为评价其性能的优劣指标,研究了vsvna结构的特性。在相同尺寸约束条件下,对vsvna与传统偶极子太赫兹天线进行了比较研究。因此,VSNA在臂尖处表现出更好和更局部的场增强。此外,还对谐振频率(28.3 THz)处的电场进行了优化。与28.3太赫兹的传统偶极天线相比,建议的设计提供了超过300%的电场约束改进。这种增强归因于尖端对尖端的几何形状,导致尖端高度局部化的场。此外,通过在天线臂尖端之间插入超薄绝缘体层,利用优化后的VSNA设计形成整流天线结构。报道的整流天线结构将总效率从11%提高到26.58%,比之前报道的工作提高了141%。除了提出的设计所带来的潜力之外,其简单性使其可用于高效的能量收集应用。最后,通过量子力学模拟器(基于MATLAB软件)研究了金属-绝缘体-金属(MIM)二极管的整流能力,其中氧化铝(Al2O3)作为绝缘体夹在金(Au)和银(Ag)之间。所建议的MIM二极管(Au/Al2O3/Ag)的零偏响应率为0.93 a /W,高于之前基于Al2O3的0.5 a /W。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characteristics of a V-shaped rectenna for 28.3 THz energy harvesting

A rectenna structure based on a potentially printable V-shaped nanoantenna (VSNA) design is introduced and numerically analyzed. The characteristics of the VSNA structure have been investigated through the electric field enhancement and radiation efficiency used as figures of merit to evaluate its performance. A comparative study has been performed between the VSNA and a conventional dipole THz antenna based on the same dimension constraints. Therefore, the VSNA has shown better and more localized field enhancement at the arm tips. Furthermore, an optimization process has been carried out to maximize the electric field at the resonance frequency (28.3 THz). The suggested design offers more than 300% improvement in electric field confinement compared to a conventional dipole antenna at 28.3 THz. This enhancement is attributed to the tip-to-tip geometry, leading to a highly localized field at the tip. Further, the optimized VSNA design is employed to form a rectenna structure by inserting an ultra-thin insulator layer between the tips of the antenna arms. The reported rectenna structure increases total efficiency from 11 to 26.58%, with a 141% improvement over previously reported work. Beyond the potentialities presented by the proposed design, its simplicity makes it manufacturable for efficient energy harvesting applications. Finally, the metal–insulator–metal (MIM) diode rectification capabilities have been investigated through a quantum mechanical simulator (built on MATLAB software) with aluminum oxide (Al2O3) as an insulator sandwiched between gold (Au) and silver (Ag). The suggested MIM diode (Au/Al2O3/Ag) offers a zero–bias responsivity of 0.93 A/W, which is higher than the previous work based on Al2O3 which was 0.5 A/W.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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