Journal of Computational Electronics最新文献_第5页

Miniaturized differential dual circularly polarized traveling wave dielectric resonator antenna array with high ports isolation 高端口隔离的小型化差分双圆极化行波介质谐振器天线阵列

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-07-29 DOI: 10.1007/s10825-026-02602-8

Yazeed Qasaymeh, Mohammad Alibakhshikenari, Omar Alharbi, Jaume Anguera, Isabelle Huynen, Iyad Dayoub, Takfarinas Saber, Ernesto Limiti, Abdullah Almuhaisen

{"title":"Miniaturized differential dual circularly polarized traveling wave dielectric resonator antenna array with high ports isolation","authors":"Yazeed Qasaymeh, Mohammad Alibakhshikenari, Omar Alharbi, Jaume Anguera, Isabelle Huynen, Iyad Dayoub, Takfarinas Saber, Ernesto Limiti, Abdullah Almuhaisen","doi":"10.1007/s10825-026-02602-8","DOIUrl":"10.1007/s10825-026-02602-8","url":null,"abstract":"<div><p>The present study presents a differential traveling wave series-fed dielectric resonator antenna (DRA) array with dual circularly polarized (DCP) operating for IEEE 802.11a applications. To possess circular polarization (CP) fields, a unique antenna element composed of rectangular dielectric resonators (RDR) coupled with octagonal slots (OS) at the ground plane and excited by the mean of a microstrip feed at the front plane is proposed. The proposed resonating element generates two orthogonal modes, <span>(TE_{delta 2 1}^{x})</span> and <span>(TE_{ 1 delta 1}^{y})</span>, ensuring the existence of CP performance. To obtain a DCP performance, the proposed resonator is utilized for portraying a seven-element array employing a concentric ring fed with dual differential port excitation. The concentric ring fed allows choosing the direction of the input wave and, accordingly, the orientation of the CP. Hence, synchronous feeding to both ports yields in generating waves of various polarization states. The <span>(50 times 50)</span> mm<span>(^2)</span> array exhibits an resonance bandwidth of 12.15% with an polarization purity of 12.5%. Meanwhile, the inter-port isolation varies from -18 dB to -39 dB along the resonance band. The realized measured gain ranges from 11.33 to 12.44 dBi. The proposed array exhibits DCP capability, and therefore, it fits for various applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-026-02602-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148614917","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The (2+1)-dimensional perturbed Biswas-Milovic equation having the Kerr and parabolic laws: revealing the optical solitons and modulation instability analysis 具有克尔定律和抛物定律的（2+1）维摄动比斯瓦斯-米洛维奇方程：揭示光孤子和调制不稳定性分析

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-07-28 DOI: 10.1007/s10825-026-02591-8

Hasan Cakicioglu, Muslum Ozisik, Aydin Secer, Karim K. Ahmed

{"title":"The (2+1)-dimensional perturbed Biswas-Milovic equation having the Kerr and parabolic laws: revealing the optical solitons and modulation instability analysis","authors":"Hasan Cakicioglu, Muslum Ozisik, Aydin Secer, Karim K. Ahmed","doi":"10.1007/s10825-026-02591-8","DOIUrl":"10.1007/s10825-026-02591-8","url":null,"abstract":"<div><p>This study, investigates the optical soliton solutions of the (2+1)-dimensional Biswas–Milovic equation in the presence of perturbation effects together with parabolic and Kerr laws of self-phase modulation. The new Kudryashov method is employed to construct a wide class of exact analytical solutions in closed form. The obtained solutions are systematically verified through contour, two-dimensional, and three-dimensional graphical representations under suitable parameter constraints, ensuring their physical consistency and validity. Various nonlinear wave structures, including bright, dark, and degenerate dark solitons, which are essential in describing nonlinear optical propagation phenomena, are successfully derived. Furthermore, the modulation instability characteristics of the considered model are analyzed to examine the stability behavior of the obtained wave solutions. The results demonstrate the effectiveness of the proposed analytical approach and highlight its capability to generate physically meaningful solutions for higher-dimensional nonlinear models. Overall, the findings provide valuable insights into the mathematical structure of the Biswas–Milovic equation and may stimulate further research on multidimensional nonlinear wave systems in optical physics.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148614396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Neural dynamic diversity assessment via recurrence quantification analysis in a hardware-efficient FPGA implementation of the Chialvo neuron map 神经动态多样性评估通过递归量化分析在硬件高效FPGA实现的Chialvo神经元图

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-07-27 DOI: 10.1007/s10825-026-02608-2

Nimet Korkmaz

{"title":"Neural dynamic diversity assessment via recurrence quantification analysis in a hardware-efficient FPGA implementation of the Chialvo neuron map","authors":"Nimet Korkmaz","doi":"10.1007/s10825-026-02608-2","DOIUrl":"10.1007/s10825-026-02608-2","url":null,"abstract":"<div><p>The discrete neuron map models require no discretization process, and they provide favorable design for digital equipment-based neuromorphic systems compared to their continuous counterparts. However, these discrete models include certain nonlinear functions and they have a difficult implementation process with digital equipment. To address this challenge, appropriate function transformation methods are employed to facilitate their hardware realization. This study deals with the Chialvo neuron map model. Its characteristic nonlinear function is simplified to make it suitable for digital hardware implementation. In this process, the modified model must best reflect the dynamic behavior of the original one and the error must be determined as accurately as possible. Based on this requirement, the error between the original and modified CN models is calculated by utilizing their spike timing differences and these differences are determined using the “median + K × Median Absolute Deviation (MAD)” method. On the other hand, since the simplification is required to enable easier implementation with digital hardware, it is necessary to demonstrate the feasibility of the implementation and to determine the associated hardware cost. For this purpose, the modified CN model is implemented using a FPGA device. The electrical output signals are recorded with an oscilloscope, and these signals are analyzed through the “Recurrence Quantization Analysis (RQA)” method to assess the neural diversity of the modified model. Ultimately, RQA provides an alternative framework for observing dynamic neural diversity, and this study aims to promote its use in neural and neuromorphic systems.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148614662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Parameter identification of photovoltaic cells using the Pivora function and a multi-strategy differential cooperative optimization algorithm 基于Pivora函数和多策略差分协同优化算法的光伏电池参数辨识

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-07-25 DOI: 10.1007/s10825-026-02610-8

L. G. Wang, X. Liang, M. L. Liu

{"title":"Parameter identification of photovoltaic cells using the Pivora function and a multi-strategy differential cooperative optimization algorithm","authors":"L. G. Wang, X. Liang, M. L. Liu","doi":"10.1007/s10825-026-02610-8","DOIUrl":"10.1007/s10825-026-02610-8","url":null,"abstract":"<div><p>We propose a parameter identification method for heterojunction (HIT) solar cells based on the Pivora function and multi-strategy differential cooperative optimization algorithm (MSDCOA) to address the problems of relying on a large amount of measured data and being vulnerable to environmental noise in the parameter identification of HIT solar cells, as well as the insufficient convergence accuracy and proneness to falling into local optima of traditional intelligent algorithms in nonlinear multi-parameter optimization. This method utilizes the characteristic parameters provided by the manufacturer, such as short-circuit current, open-circuit voltage, and current and voltage at the maximum power point, to construct a smooth theoretical I–V curve of HIT cells through piecewise Pivora function fitting. It replaces the measured curve that is susceptible to interference, reduces the impact of measurement errors on the identification results, and achieves the purpose of accurately modeling the I–V curve of HIT cells without experiments. Experimental results show that the average errors of the theoretical I–V curve are only 0.55% and 0.81%, indicating high fitting accuracy. Subsequently, MSDCOA is adopted to solve the optimal parameters of HIT solar cells. Compared with traditional intelligent optimization algorithms, the root mean square error of parameter identification by MSDCOA is as low as 0.005519, 0.008483, 0.009900, and 0.009917, respectively, showing better performance. The proposed method does not rely on a large amount of measured data, has both high accuracy and high stability, and provides a reliable new approach for the parameter identification of HIT solar cells.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148614174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pressure-dependent band alignment in ZnO/GaN bilayer heterostructures for UV optoelectronics 紫外光电子学中ZnO/GaN双层异质结构的压力相关能带对准

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-07-25 DOI: 10.1007/s10825-026-02609-1

S. Gaurav, Shefali Kanwar, S. Shankar

{"title":"Pressure-dependent band alignment in ZnO/GaN bilayer heterostructures for UV optoelectronics","authors":"S. Gaurav, Shefali Kanwar, S. Shankar","doi":"10.1007/s10825-026-02609-1","DOIUrl":"10.1007/s10825-026-02609-1","url":null,"abstract":"<div><p>A pressure-dependent theoretical study of the electronic and electrostatic properties of a wurtzite n-ZnO/p-GaN bilayer heterojunction is presented using an integrated equation-of-state and band alignment framework. The pressure-temperature band gaps of ZnO and GaN were evaluated using analytical band gap relations with Varshni thermal corrections, while lattice compression was described using the third-order Birch–Murnaghan equation of state. Vacuum-referenced band edges were then constructed through a material-specific vacuum-referenced band-edge partition model to determine band offsets and junction electrostatics. Over 0–9 GPa at 300 K, the band gaps increase from 3.393 to 3.625 eV for GaN and from 3.396 to 3.616 eV for ZnO, leading to a blue shift in the UV cutoff wavelength from about 365 nm to 342 nm. The calculated band edges show that ZnO has a deeper conduction band and GaN retains the higher valence band. The structure preserves a Type-II band alignment under compression with moderate offsets of about 0.11–0.15 eV. After including material-specific band-edge partitioning, pressure-dependent dielectric response, explicit density-of-states parameters, and screened polarization charge, the built-in potential increases from 3.093 to 3.295 V, while the peak junction electric field increases from 862.8 to 1110.0 kV/cm. These results establish a transparent modeling route for pressure-tunable wide-bandgap heterostructures for UV optoelectronic and sensing applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148614270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel approach of NO(_2) sensing through a MoS(_2)/PANI transistor: first principle study MoS (_2) /PANI晶体管NO (_2)传感新方法：第一原理研究

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-07-20 DOI: 10.1007/s10825-026-02605-5

Shivangi Srivastava, Renna Shakir, J. Karthikeyan, Sajal Agarwal

{"title":"A novel approach of NO(_2) sensing through a MoS(_2)/PANI transistor: first principle study","authors":"Shivangi Srivastava, Renna Shakir, J. Karthikeyan, Sajal Agarwal","doi":"10.1007/s10825-026-02605-5","DOIUrl":"10.1007/s10825-026-02605-5","url":null,"abstract":"<div><p>This study analyzes the sensing performance of a heterojunction thin film transistors (TFT) of molybdenum disulfide (MoS<span>(_2)</span>) and polyaniline (PANI) for nitrogen dioxide (NO<span>(_2)</span>) gas through the evaluation of charge transfer and adsorption energy. First-principles calculations are utilized to analyze the charge transfer dynamics and the adsorption energy between the novel sensing surface and NO<span>(_2)</span> gas molecule. Further, these calculations are extended to different ppm and ppb levels to systematically investigate the sensing performance of the proposed TFT structure across different concentrations of NO<span>(_2)</span>. Through the comprehensive study of the different concentrations of NO<span>(_2)</span>, it is found that the proposed device has the potential to exhibit an extremely low limit of detection i.e., 5 ppb, based on the theoretical charge transfer analysis calculated by DFT, which can be extended for real-time fabrication. Additionally, the proposed device demonstrates promising capability to exhibit excellent sensitivity of <span>(approx 382 %)</span>. With the achieved sensing performance, the proposed device is effectively used in NO<span>(_2)</span> monitoring in different essential places, such as refineries and coal mines exhaust to avoid alarming situations. Along with that, this sensor can be employed in the healthcare sector for measuring NO<span>(_2)</span> levels in the human body through various pathways.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148613956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Strange non-chaotic attractor (SNA) dynamics in a ring of nonlinear coupled second-order non-autonomous circuits with threshold controller nonlinearity 具有非线性阈值控制器的二阶非线性耦合电路环中的奇异非混沌吸引子动力学

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-07-17 DOI: 10.1007/s10825-026-02607-3

I. Raja Mohamed, P. Yogamarish, R. Rizwana

引用次数: 0

Power estimation in VLSI circuits: pre- and post-synthesis analysis with interpretable generalized additive neural networks VLSI电路中的功率估计：可解释的广义加性神经网络的合成前后分析

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-07-16 DOI: 10.1007/s10825-026-02583-8

T. Thyagaraj, N. Ramavenkateswaran, Madhusudan Kulkarni, Nagaraj Bhat

{"title":"Power estimation in VLSI circuits: pre- and post-synthesis analysis with interpretable generalized additive neural networks","authors":"T. Thyagaraj, N. Ramavenkateswaran, Madhusudan Kulkarni, Nagaraj Bhat","doi":"10.1007/s10825-026-02583-8","DOIUrl":"10.1007/s10825-026-02583-8","url":null,"abstract":"<div><p>This study proposes a brand-new method for estimating power in Very-large-scale integration (VLSI) circuits: Pre- and Post-Synthesis Analysis with Interpretable Generalized Additive Neural Networks (PEVLSI-PPS-IGANN). The method starts with collecting data from the VLSI dataset, then handles missing values and normalizes the input data using the Cauchy Robust Correction-Sage Husa Extended Kalman Filter (CRCHEKF). The cleaned and preprocessed data are then fed into the IGANN, which is intended to predict power dissipation in integrated circuits during both the pre-layout and post-layout stages. The optimized IGANN model, assisted by PSOA, improves prediction accuracy and generalization while preserving interpretability. While IGANN provide interpretable predictions, it lacks the ability to automatically optimize its settings. To overcome this limitation, the PSOA is used to adjust IGANN’s mass parameters, hence improving prediction accuracy and performance. The main contributions of this study are threefold: development of a robust preprocessing framework using the CRCHEKF to handle noisy and incomplete data; design of an IGANN that explains the contribution of each feature to power dissipation; and integration of the PSOA for adaptive parameter tuning to enhance accuracy and generalization. Together, these innovations provide a unified and transparent power estimation framework for both pre- and post-synthesis analysis in VLSI circuits.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148466300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphene-based TSVs with BCB liner and p + guard ring: a paradigm for ultra-low noise 3D ICs 具有BCB衬垫和p +保护环的石墨烯基tsv：超低噪声3D集成电路的范例

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-07-16 DOI: 10.1007/s10825-026-02604-6

Debika Chaudhuri, Hafizur Rahaman, Tamal Ghosh

{"title":"Graphene-based TSVs with BCB liner and p + guard ring: a paradigm for ultra-low noise 3D ICs","authors":"Debika Chaudhuri, Hafizur Rahaman, Tamal Ghosh","doi":"10.1007/s10825-026-02604-6","DOIUrl":"10.1007/s10825-026-02604-6","url":null,"abstract":"<div><p>3-dimensional integrated circuits (3D ICs) facilitate miniaturization, enhanced bandwidth, reduced power consumption, superior performance, and scalability. Through-silicon vias (TSVs) serve as essential interconnects in 3D integration technology. However, numerous design challenges arise with TSVs. Furthermore, TSVs can significantly contribute to noise throughout the substrate. Consequently, noise coupling from TSVs is regarded as a critical factor in the design of 3D ICs. This paper presents an in-depth analysis of noise induced by TSVs, examining various key design parameters. The performance of structures utilizing carbon nanotubes (CNTs) and graphene as core materials for TSVs was evaluated in terms of noise coupling reduction. Furthermore, the noise isolation effectiveness of a p + guard ring around the signal TSV in 3D ICs is verified using the TSV noise coupling model. The impact of the proposed shielding techniques was evaluated in both the frequency and time domains. Additionally, noise coupling from TSVs to the silicon substrate was examined with various liner materials, such as silicon dioxide (SiO<sub>2</sub>), benzocyclobutene (BCB), Teflon, and Perylene-N. In comparison to traditional copper (Cu)-filled TSVs, the results show that graphene nanoribbon (GNR) and CNT based TSVs greatly reduce substrate and inter TSV noise. While time domain data indicate a decreased peak substrate noise voltage, frequency domain analysis indicates an improvement in forward transmission. Noise isolation is further improved by the addition of a p + guard ring and optimum liner materials. For next-generation 3D ICs, the suggested TSV architectures provide enhanced signal integrity and thermal-electrical performance. Based on the constraints, the results show that a graphene TSV with BCB as the liner material and a p + guard ring offer the best noise reduction between the TSV and the substrate.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148466284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing linear photogalvanic effect via defects in a photodetector device based on the Janus SeBAlS monolayer 利用Janus SeBAlS单层光电探测器的缺陷增强线性光电效应

IF 2.8 4区工程技术

Journal of Computational Electronics Pub Date : 2026-07-15 DOI: 10.1007/s10825-026-02594-5

LingXiang Li, Haixia Gao, Xi Fu, Guangyao Liang

{"title":"Enhancing linear photogalvanic effect via defects in a photodetector device based on the Janus SeBAlS monolayer","authors":"LingXiang Li, Haixia Gao, Xi Fu, Guangyao Liang","doi":"10.1007/s10825-026-02594-5","DOIUrl":"10.1007/s10825-026-02594-5","url":null,"abstract":"<div><p>The photogalvanic effect (PGE) in two-dimensional materials has drawn abundant attention in the last several years. In this paper, based on a special Janus monolayer, namely the Janus SeBAlS monolayer, we built a two-probe armchair-edged photodetector device containing four different vacancy and four different substitution doping conditions and studied the enhanced photocurrent produced by the linear PGE. It was found that the photocurrent in the Janus SeBAlS photodetector showed the relation cos(2<i>θ</i>) with the polarization angle. Moreover, since the symmetry of the Janus SeBAlS monolayer decreases from <i>C</i><sub><i>3v</i></sub> to <i>C</i><sub><i>s</i></sub>, when importing different point defects, namely vacancy or substitution doping, the photocurrent is strongly increased, indicating heightening of PGE, and our results further prove that the symmetry <i>C</i><sub><i>s</i></sub> mainly causes the cosine relationship with the polarization angle. Furthermore, the large extinction ratios show that the Janus SeBAlS photodetector is highly sensitive. Therefore, these results reveal that the Janus SeBAlS holds considerable potential for actual applications in low-energy power devices in optoelectronics, and may be superior to the Janus MoSSe and Janus In<sub>2</sub>SSe monolayers.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"25 4","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148465908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0