Journal of Computational Electronics最新文献

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Geometric shape’s impact on core-shell nanocomposites’ optical properties 几何形状对核-壳纳米复合材料光学性能的影响
IF 2.5 4区 工程技术
Journal of Computational Electronics Pub Date : 2025-08-07 DOI: 10.1007/s10825-025-02388-1
Shewa Getachew Mamo
{"title":"Geometric shape’s impact on core-shell nanocomposites’ optical properties","authors":"Shewa Getachew Mamo","doi":"10.1007/s10825-025-02388-1","DOIUrl":"10.1007/s10825-025-02388-1","url":null,"abstract":"<div><p>This study presents a comprehensive theoretical and numerical investigation into the local field enhancement factor (LFEF) and optical bistability (OB) in ZnTe@Ag core-shell nanostructures embedded within dielectric host matrices. Using the quasi-static approximation, Laplace’s equation was analytically solved for both spherical and cylindrical geometries under appropriate boundary conditions. The Kerr-type nonlinearity of the host medium was incorporated to model third-order nonlinear optical effects. The dielectric response of the silver shell was described using a size-dependent Drude model. Numerical simulations revealed that spherical nanocomposites exhibit significantly stronger field enhancement and lower OB threshold intensities compared to cylindrical counterparts. Additionally, increasing the host dielectric constant or core-shell radius ratio resulted in pronounced shifts in resonance peaks and broadened bistability regions. The LFEF was found to be highly tunable with respect to geometry, size, and material composition, reaching intensities up to three times greater in spherical structures. These findings provide crucial insight into the geometric and dielectric modulation of nonlinear optical behavior, supporting the design of nanostructures for use in optical sensing, memory, and switching devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145163098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-power computing with reversible logic: a modular approach to Vedic multiplication 具有可逆逻辑的低功耗计算:吠陀乘法的模块化方法
IF 2.5 4区 工程技术
Journal of Computational Electronics Pub Date : 2025-08-06 DOI: 10.1007/s10825-025-02396-1
Diksha Ruhela, Rajni Jindal
{"title":"Low-power computing with reversible logic: a modular approach to Vedic multiplication","authors":"Diksha Ruhela,&nbsp;Rajni Jindal","doi":"10.1007/s10825-025-02396-1","DOIUrl":"10.1007/s10825-025-02396-1","url":null,"abstract":"<div><p>Driven by the growing imperative for energy-efficient computing, reversible logic gates have gained significant attention for their ability to reduce energy dissipation. These gates are essential in advanced domains such as quantum computing, DNA computing, nanotechnology, and energy-aware CMOS design. This study presents an optimized 4 × 4-bit complex Vedic multiplier designed using reversible logic, alongside modular implementations of a 4 × 4-bit Vedic multiplier, unified 8-bit adder–subtractor and two variants of a 4-bit carry-save adder. The proposed architectures are evaluated based on key performance metrics, including ancilla inputs, garbage outputs, quantum cost, and gate count. Furthermore, an entropy-based validation grounded in Shannon’s information theory confirms logical reversibility of the circuits, reinforcing their potential for ultra-low-power and quantum computing applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145162084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electric field-tuned spin Seebeck effect in doped SiC nanoribbons 掺杂SiC纳米带的电场调谐自旋塞贝克效应
IF 2.5 4区 工程技术
Journal of Computational Electronics Pub Date : 2025-08-05 DOI: 10.1007/s10825-025-02393-4
JiangXue Huang, HongQiao Su, Jin He, QiJun Huang, Hao Wang, Sheng Chang
{"title":"Electric field-tuned spin Seebeck effect in doped SiC nanoribbons","authors":"JiangXue Huang,&nbsp;HongQiao Su,&nbsp;Jin He,&nbsp;QiJun Huang,&nbsp;Hao Wang,&nbsp;Sheng Chang","doi":"10.1007/s10825-025-02393-4","DOIUrl":"10.1007/s10825-025-02393-4","url":null,"abstract":"<div><p>In this work, an electric field-tuned strategy based on dual-atom doping is proposed to achieve precise control of spin-dependent thermoelectric transport in SiC nanoribbons (SiCNRs), using first-principles calculations. The study reveals that dual-atom doping at specific sites of zigzag SiCNRs can regulate spin-dependent transmission coefficients, leading to the emergence of “X\"-shaped transmission spectra near the Fermi level. Under this condition, the two spin channels exhibit pronounced opposite signs in their Seebeck coefficients, inducing spin-polarized currents with opposite flow directions. By applying a gate voltage to the central scattering region, the density of states distribution in the doped system can be precisely modulated, thereby enabling a pronounced spin Seebeck effect. The spin Seebeck coefficient reaches a remarkable value of 225 µV/K, significantly surpassing that of conventional doped SiC nanoribbons(<span>(sim)</span>100 µV/K) and edge-doped graphene nanoribbons(<span>(sim)</span>150 µV/K). This dual-atom doping strategy establishes a new paradigm for designing room-temperature spin caloritronic devices with programmable spin current configurations.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145161696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarization-selective dual-mode metasurface for transmission, reflection, and absorption 偏振选择性双模超表面用于传输、反射和吸收
IF 2.5 4区 工程技术
Journal of Computational Electronics Pub Date : 2025-08-02 DOI: 10.1007/s10825-025-02391-6
Neema K, Deepti Das Krishna, Magnel Rose Mathew
{"title":"Polarization-selective dual-mode metasurface for transmission, reflection, and absorption","authors":"Neema K,&nbsp;Deepti Das Krishna,&nbsp;Magnel Rose Mathew","doi":"10.1007/s10825-025-02391-6","DOIUrl":"10.1007/s10825-025-02391-6","url":null,"abstract":"<div><p>In this paper, a metasurface design is proposed, which can be reconfigured to operate in two modes. In Mode 1, it functions as a polarization-selective transmitter/reflector in the 3.19<span>(-)</span>3.7 GHz range, transmitting <i>x</i>-polarized waves and reflecting <i>y</i>-polarized waves when the RF switch is OFF, while reflecting both when ON. In Mode 2, it functions as a polarization-selective absorber/reflector by integrating an absorber to the structure. It allows <i>x</i>-polarized waves to be either absorbed or reflected based on the switch state, while <i>y</i>-polarized waves are always reflected. The four-layer metallic structure integrates PIN diodes with a simplified embedded bias network, minimizing complexity and achieving 99.7% absorptivity. Theoretical validation is provided through surface current distribution and an equivalent circuit model, with experimental measurements confirming performance. It features a slimmer design, improved angular stability, and a simplified DC biasing network, demonstrating a multifunctional solution for advanced electromagnetic applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145160738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photonic crystal fiber-based gas sensor for HCN detection in industrial environments 用于工业环境中HCN检测的光子晶体光纤气体传感器
IF 2.5 4区 工程技术
Journal of Computational Electronics Pub Date : 2025-08-01 DOI: 10.1007/s10825-025-02395-2
S. Mohamed Nizar, S. Kalpana, S. Abinaya
{"title":"Photonic crystal fiber-based gas sensor for HCN detection in industrial environments","authors":"S. Mohamed Nizar,&nbsp;S. Kalpana,&nbsp;S. Abinaya","doi":"10.1007/s10825-025-02395-2","DOIUrl":"10.1007/s10825-025-02395-2","url":null,"abstract":"<div><p>A gas sensor based on a hexagonally organized core photonic crystal fiber (PCF) is presented in this research. One of the deadly and hazardous gases that contributes to environmental air pollution is hydrogen cyanide. This work presents the design of a novel PCF that provides minimal confinement loss and great sensitivity in the absorption frequency of hydrogen cyanide gas (HCN). With a hexagonal core and an outside cladding that has been filled with HCN gas, the suggested sensor is made of four layers of circular air holes in the cladding region. Version 5.4 of the COMSOL Multiphysics Software is utilized as a simulation and design tool. The findings are simulated using the finite element method (FEM). The result shows that at a frequency of 0.75 THz, the PCF provides a low confinement loss of zero for maximum input frequency and a high relative sensitivity of 91%. The effect of raising the HCN concentration on confinement loss and relative sensitivity is examined. Compared to existing sensors, the proposed PCF’s superior sensitivity and low confinement losses suggest that this optical structure could be a viable option for detecting this gas in both industrial and medical applications. We are certain that the sensor’s contribution to useful applications and its optimized geometrical structure will make it easy to manufacture. Additionally, our suggested PCF fiber will be perfect for a variety of businesses in the terahertz (THz) zones.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145160811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A current–voltage model for organic solar cells with carrier transport layers based on a combined analytical and regression approach 基于分析与回归相结合的载流子输运层有机太阳能电池电流-电压模型
IF 2.5 4区 工程技术
Journal of Computational Electronics Pub Date : 2025-07-31 DOI: 10.1007/s10825-025-02389-0
M. L. Inche Ibrahim
{"title":"A current–voltage model for organic solar cells with carrier transport layers based on a combined analytical and regression approach","authors":"M. L. Inche Ibrahim","doi":"10.1007/s10825-025-02389-0","DOIUrl":"10.1007/s10825-025-02389-0","url":null,"abstract":"<div><p>Organic solar cells (OSCs) have many potential applications due to attributes such as high mechanical flexibility, relatively low production cost, good transparency, and lightweight. Since the power conversion efficiency (PCE) of OSCs is relatively low currently, their PCE must be further improved to better exploit their potential in the future. The use of carrier transport layers (CTLs) is essential to maximize the PCE of OSCs. Therefore, a model that can accurately and reliably describe the current voltage (J-V) characteristics of OSCs with CTLs is also essential. Such a model is proposed in this paper. The proposed model is based on the semiconductor drift–diffusion transport model, which is the standard physics-based approach for modeling semiconductor devices including solar cells. In obtaining the proposed model, the approximate electric fields and the approximate boundary conditions in OSCs with CTLs are derived and then applied to the carrier continuity equations, which are then solved using a recently proposed combined analytical and regression method. The use of the recently proposed method makes the proposed model to be more accurate than analytical drift–diffusion-based J-V models and more reliable than numerical drift–diffusion-based J-V models. We verify that the proposed model works well and show that it can provide insights into how to optimize the design and improve the PCE of OSCs with CTLs. Therefore, owing to its unique quality, the proposed model can be a valuable tool for predicting and analyzing the J-V characteristics, and ultimately for improving the design and the PCE of OSCs with CTLs.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-025-02389-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145171870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of subharmonic phase control in cavity-coupled resonant tunneling diode oscillators 腔耦合谐振隧道二极管振荡器的次谐波相位控制分析
IF 2.5 4区 工程技术
Journal of Computational Electronics Pub Date : 2025-07-29 DOI: 10.1007/s10825-025-02387-2
Jonas Watermann, Enes Mutlu, Jonathan Abts, Christian Preuss, Nils Weimann
{"title":"Analysis of subharmonic phase control in cavity-coupled resonant tunneling diode oscillators","authors":"Jonas Watermann,&nbsp;Enes Mutlu,&nbsp;Jonathan Abts,&nbsp;Christian Preuss,&nbsp;Nils Weimann","doi":"10.1007/s10825-025-02387-2","DOIUrl":"10.1007/s10825-025-02387-2","url":null,"abstract":"<div><p>This work proposes an efficient semi-numerical scheme to simulate phase and frequency modulation in noisy resonant tunneling diode (RTD) oscillators coupled to parasitic cavity modes. Using a separation of timescales, a compact amplitude-phase description of the coupled system is derived. In this compact system, phase modulation by fundamental and subharmonic injection locking is investigated regarding the influence of amplitude- and phase noise, the influence of external cavity modes and the limitations in the modulation bandwidth and stability. The stability of phase control against cycle slips induced by the phase modulation is expressed using a diffusion coefficient. The compact system accurately models experimental data of RTD oscillators presented in this paper, which show a strong correlation of module integration on frequency and phase control at oscillation frequencies of 550 GHz. The method lays a foundation for compact and dynamic phase-amplitude descriptions of cavity-coupled RTD oscillators and arrays for future applications in localization and sensing, in which the interaction between the RTD and external resonance modes is decisive.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-025-02387-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145171373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new fault-tolerance majority voter circuit for quantum-based nano-scale digital systems 一种新的基于量子纳米级数字系统的容错多数选民电路
IF 2.5 4区 工程技术
Journal of Computational Electronics Pub Date : 2025-07-28 DOI: 10.1007/s10825-025-02357-8
Seyed-Sajad Ahmadpour, Nima Jafari Navimipour, Mohammad Mosleh, Mojtaba Noorallahzadeh, Sankit Kassa, Suhaib Ahmed
{"title":"A new fault-tolerance majority voter circuit for quantum-based nano-scale digital systems","authors":"Seyed-Sajad Ahmadpour,&nbsp;Nima Jafari Navimipour,&nbsp;Mohammad Mosleh,&nbsp;Mojtaba Noorallahzadeh,&nbsp;Sankit Kassa,&nbsp;Suhaib Ahmed","doi":"10.1007/s10825-025-02357-8","DOIUrl":"10.1007/s10825-025-02357-8","url":null,"abstract":"<div><p>Quantum-dot cellular automata (QCA) technology has gained attention lately due to its ability to reduce energy dissipation and minimize circuit area. However, the existing research shows that a critical challenge arises from the lack of circuit resistance in QCA systems when confronted with defects. This issue directly impacts circuit stability and output generation. Moreover, the 3-input majority gate (MV3) is a foundational component within QCA circuits, making its improvement crucial for developing fault-tolerant circuits. One approach is to design MV3 that incorporates essential quantum cells within a single clock cycle. Thus, this paper presents a unique cellular structure for the MV3 gate, utilizing simple quantum cells. The proposed gate, comprising only twelve cells, serves as a building block for QCA circuits. It boasts several key features, including low power consumption, efficient output polarity (± 9.93e00−1), and high reliability. Furthermore, to show the efficiency of the suggested gate, it is employed in realizing a 2:1 multiplexer and a full adder/subtractor. Lastly, the proposed MV3 gate is utilized to develop a simultaneous multi-logic gate  which is producing several vital digital circuits, such as AND, OR, NOT, NAND, Copy, Subtractor, and Adder. The circuits are designed using QCADesigner and QCAPro, with power estimation included in the process. The comparative analysis reveals that the proposed structures significantly enhance the trade-off between complexity, fault tolerance, and power consumption compared to previous designs.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145170752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A semi-analytical physics-based transient model for program (PGM) operation of charge-trap-based 3-D NAND flash memories 基于电荷阱的三维NAND闪存程序(PGM)运行的半解析物理瞬态模型
IF 2.5 4区 工程技术
Journal of Computational Electronics Pub Date : 2025-07-24 DOI: 10.1007/s10825-025-02385-4
Jinil Yoo, Haechan Choi, Hyungcheol Shin
{"title":"A semi-analytical physics-based transient model for program (PGM) operation of charge-trap-based 3-D NAND flash memories","authors":"Jinil Yoo,&nbsp;Haechan Choi,&nbsp;Hyungcheol Shin","doi":"10.1007/s10825-025-02385-4","DOIUrl":"10.1007/s10825-025-02385-4","url":null,"abstract":"<div><p>In this paper, we propose a new program (PGM) transient model for three-dimensional (3-D) gate-all-around (GAA) cylindrical NAND flash memory. An emission term is added to previous models and is combined into a compact form with distinct acceptor/donor-like trap levels. The continuity equation is solved, including Shockley–Read–Hall (SRH) recombination theory to track the concentration of the conduction band (CB) free electrons. The threshold voltage transient is obtained from the electron/hole concentrations, and single/incremental step pulse programming (ISPP) pulse experimental data are calibrated with the model to check its validity.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-025-02385-4.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145168405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimizing the efficiency of perovskite solar cells for improved performance and energy conversion using temporal dynamic graph neural network 利用时间动态图神经网络优化钙钛矿太阳能电池的效率,以提高性能和能量转换
IF 2.5 4区 工程技术
Journal of Computational Electronics Pub Date : 2025-07-21 DOI: 10.1007/s10825-025-02373-8
T. D. Subha, T. D. Subash, S. D. Lalitha, J. Shobana
{"title":"Optimizing the efficiency of perovskite solar cells for improved performance and energy conversion using temporal dynamic graph neural network","authors":"T. D. Subha,&nbsp;T. D. Subash,&nbsp;S. D. Lalitha,&nbsp;J. Shobana","doi":"10.1007/s10825-025-02373-8","DOIUrl":"10.1007/s10825-025-02373-8","url":null,"abstract":"<div><p>Perovskite solar cells represent a promising solution for next-generation solar energy due to their high power conversion efficiency (PCE) and cost-effective fabrication. However, enhancing their performance remains a major challenge, largely because existing material selection and optimization methods rely heavily on time-consuming, trial-and-error experimentation. To overcome these limitations, a hybrid framework combining temporal dynamic graph neural networks (TDGNN) and human evolutionary optimization (HEO) referred to as the TDGNN-HEO method is proposed for improving prediction accuracy and optimizing the efficiency of perovskite tandem solar cells. The main goal of this strategy is to precisely forecast cell performance and maximize PCE. TDGNN is used to capture temporal and structural dependencies among solar cell parameters, enabling precise prediction of short-circuit current. HEO is applied to optimize the neural network’s weight parameters, enhancing learning effectiveness and overall model performance. The methodology is implemented in MATLAB and evaluated against established techniques, including convolutional neural networks, random forest algorithm, and K-nearest neighbors. Results demonstrate that the TDGNN-HEO method achieves a PCE of 20.5%, significantly outperforming the benchmark models, which yield 18.7%, 15.5%, and 10.13%, respectively. In terms of prediction accuracy, TDGNN-HEO attains 97%, compared to 85%, 75%, and 65% for the other techniques. These outcomes highlight the effectiveness of the TDGNN-HEO framework in improving both the efficiency and predictive reliability of perovskite solar cells, offering a robust data-driven solution for advancing solar cell design and performance optimization.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145167801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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