Journal of Computational Electronics最新文献

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Quantum transport properties of a double-barrier quantum well structure based on V-cut edge-patterned armchair graphene nanoribbon 基于v形边型扶手椅石墨烯纳米带的双势垒量子阱结构的量子输运性质
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02264-4
Bikramjit Basumatary, Agile Mathew
{"title":"Quantum transport properties of a double-barrier quantum well structure based on V-cut edge-patterned armchair graphene nanoribbon","authors":"Bikramjit Basumatary,&nbsp;Agile Mathew","doi":"10.1007/s10825-024-02264-4","DOIUrl":"10.1007/s10825-024-02264-4","url":null,"abstract":"<div><p>A double-barrier quantum well is created using a larger band gap V-cut modified armchair graphene nanoribbon (AGNR) for the barrier region and a pristine AGNR with a smaller bandgap for the channel region. The numerical non-equilibrium Green’s function (NEGF) method, based on the pi-orbital tight-binding model, is employed to study the quantum transport properties of the device. The effects of various dimensional parameters, such as contact width, channel length, and distance between V-cuts in the barrier region, are investigated. The plot of the local density of states (LDOS) shows the formation of a single quantized quasi-energy state in the channel region, corresponding to a peak in transmission. The V–I characteristics of the device exhibit negative differential resistance (NDR) regions for a certain range of bias values. This device’s resonant tunneling performance parameters are compared with those of a similar, previously reported structure.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142757972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All-optical photonic crystal logic gates and functions based on threshold logic 基于阈值逻辑的全光光子晶体逻辑门和功能
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-12-02 DOI: 10.1007/s10825-024-02256-4
Arash Firouzimoghaddam, Hojjat Sharifi
{"title":"All-optical photonic crystal logic gates and functions based on threshold logic","authors":"Arash Firouzimoghaddam,&nbsp;Hojjat Sharifi","doi":"10.1007/s10825-024-02256-4","DOIUrl":"10.1007/s10825-024-02256-4","url":null,"abstract":"<div><p>This paper presents a novel photonic crystal structure for designing all-optical photonic crystal logic gates and functions based on threshold logic concept. The structure offers two- and three-input AND/NAND logic gates as well as three-input majority/minority functions. In this method, the summation of inputs values connects to a threshold detector with varying threshold values in order to achieve different logic gates and functions. Furthermore, the impact of variations in the diameter and position of rods on the performance of the proposed structures has been examined. Simulation results demonstrate the successful operation of the proposed structures even in the presence of 14% variation in rod diameter, indicating that the presented logic gates exhibit minimal sensitivity to process variations. The finite difference time domain method was used to evaluate the performance of the proposed structures with a switching power requirement of is 2.5 W.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and simulation of the charge layer effect on the Schottky junction characteristics using an ensemble Monte Carlo model 利用系综蒙特卡罗模型设计和模拟电荷层对肖特基结特性的影响
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-11-30 DOI: 10.1007/s10825-024-02249-3
Fatemeh Haddadan, Mohammad Soroosh, Ramakrishnan Rajasekar
{"title":"Design and simulation of the charge layer effect on the Schottky junction characteristics using an ensemble Monte Carlo model","authors":"Fatemeh Haddadan,&nbsp;Mohammad Soroosh,&nbsp;Ramakrishnan Rajasekar","doi":"10.1007/s10825-024-02249-3","DOIUrl":"10.1007/s10825-024-02249-3","url":null,"abstract":"<div><p>In this research, an efficient two-valley Monte Carlo model simulates the Schottky junction. Impurity and phonon scatterings are considered, and impact ionization is included in the scattering matrix. Non-parabolic energy bands are assumed, and tunneling and thermionic emission are the current components. By adding a thin layer, it is shown that the formation of an electric field opposite to the electron motion direction at the junction boundary increases the effective height of the Schottky barrier. By changing the impurity concentration density of this thin layer, the change in the effective height of the Schottky barrier and consequently the simulated passing current is studied. A comparison of the results obtained from the simulation with valid scientific data confirms the correctness of the presented model. The proposed model can be widely used in the analysis of Schottky-based devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An efficient multispectral CsSnI3 MSM photodetector using back grooves and light trapping optimization: FDTD-GA calculations 利用背沟槽和光捕获优化技术的高效多光谱铯硒碘3 MSM 光电探测器:FDTD-GA 计算
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-11-28 DOI: 10.1007/s10825-024-02251-9
H. Ferhati, F. Djeffal
{"title":"An efficient multispectral CsSnI3 MSM photodetector using back grooves and light trapping optimization: FDTD-GA calculations","authors":"H. Ferhati,&nbsp;F. Djeffal","doi":"10.1007/s10825-024-02251-9","DOIUrl":"10.1007/s10825-024-02251-9","url":null,"abstract":"<div><p>The present work aims at developing a new design strategy based on optimizing light trapping management in the CsSnI<sub><i>3</i></sub> perovskite active layer using back groove engineering, to tune the broadband photoresponsivity. To do so, an extensive numerical simulations based on 2D-Finite Difference Time Domain (FDTD)-SILVACO calculations are carried out to assess the optoelectronic properties of the proposed sensor, including the impact of back grooves engineering. The effect of the groove geometry on the photosensing characteristics of the photodetector (PD) is analyzed. It is found that the depth, width and the period of the back grooves can modulate the optical behavior of the CsSnI<sub><i>3</i></sub> perovskite active layer, showing a great potential for improving the light harvesting capabilities over a wide spectral range. A Genetic Algorithm Optimization (GAO) technique is implemented to find out the best groove geometry and period, offering the highest photoresponse over UV to NIR spectral bands. The obtained results show the ability of the proposed strategy to improve and tune the optoelectronic properties of the device, demonstrating a high responsivity of 78 mA/W and an improved I<sub>ON</sub>/I<sub>OFF</sub> ratio of 61 dB. Therefore, the proposed approach can open new paths to enhance the optical and electrical performances of thin film perovskite photodetectors by optimizing the light trapping management using back groove engineering and metaheuristic calculations.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142736977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design and optimization of a terahertz photonic crystal fiber based biosensor to detect malaria disease 基于太赫兹光子晶体光纤的疟疾检测生物传感器的设计与优化
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-11-26 DOI: 10.1007/s10825-024-02255-5
Vishal Chaudhary, Sonal Singh
{"title":"Design and optimization of a terahertz photonic crystal fiber based biosensor to detect malaria disease","authors":"Vishal Chaudhary,&nbsp;Sonal Singh","doi":"10.1007/s10825-024-02255-5","DOIUrl":"10.1007/s10825-024-02255-5","url":null,"abstract":"<div><p>This study introduces a dual core photonic crystal fiber (DC-PCF) based biosensing approach for early detection of malaria in individuals by monitoring the variations in the red blood cells (RBCs). The proposed DC-PCF comprises four layers of a hexagonal lattice with circular air holes. In the proposed DC-PCF, we have used a central elliptical hole to infiltrate RBCs samples. The proposed study helps to detect various stages of malaria, such as infected RBCs, including the Ring stage, Trophozoite stage, and Schizont stage, by analyzing the changes in the peak wavelength. The proposed refractive index (RI) based sensor is designed to operate within an RI range of 1.33 to 1.41, enabling the detection of malaria. The numerical analysis indicate that our biosensor demonstrates significant sensitivity across different stages, such as 12,00000 nm/RIU for the ring stage, 11,15,263.15 nm/RIU for the trophozoite stage, and 11,13,793.10 nm/RIU for the schizont stage under x-polarization. Similarly, under y-polarization, the sensitivity is observed to be 10,50,000 nm/RIU for the ring stage, 10,54,736.84 nm/RIU for the trophozoite stage, and 10,32,758.62 nm/RIU for the schizont stage. The proposed DC-PCF-based biosensor is highly suitable for biological analysis and early malaria detection because it has a low detection limit and superior sensing performance.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142714342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of the ISO-FDTD algorithm for processing higher-order dielectric function in SF-FDTD 在 SF-FDTD 中处理高阶介电函数的 ISO-FDTD 算法研究
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-11-01 DOI: 10.1007/s10825-024-02230-0
Ke-Da Gu, Jin Xie, Hong-Wei Yang
{"title":"Study of the ISO-FDTD algorithm for processing higher-order dielectric function in SF-FDTD","authors":"Ke-Da Gu,&nbsp;Jin Xie,&nbsp;Hong-Wei Yang","doi":"10.1007/s10825-024-02230-0","DOIUrl":"10.1007/s10825-024-02230-0","url":null,"abstract":"<div><p>We use an improved shift operator finite-difference time-domain (ISO-FDTD) algorithm, previously proposed by others, to further process more complex dielectric functions including critical models and several higher-order Lorentz models that we fitted ourselves. These function models have a total of 6–8 sub-terms, and each sub-term consists of two complex poles (Lorentz model). This work supports the universal applicability of the ISO-FDTD algorithm for processing higher-order complex dispersive materials. We applied this ISO-FDTD algorithm in split-field FDTD (SF-FDTD) to simulate dispersion media under oblique incidence. The simulation results agree well with the analytical solutions. Thus, this approach provides researchers with an alternative option apart from auxiliary differential equations (ADE) or piecewise linear recursive convolution (PLRC) methods when processing high-order dispersive media in SF-FDTD.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1391 - 1401"},"PeriodicalIF":2.2,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-024-02230-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142598812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
UTC-PD's optoelectronic mixing principle and optimal working condition UTC-PD 的光电混合原理和最佳工作条件
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-10-21 DOI: 10.1007/s10825-024-02235-9
Jihong Ye, Yongqing Huang, Mingxi Yang, Shuhu Tan, Xuejie Wang
{"title":"UTC-PD's optoelectronic mixing principle and optimal working condition","authors":"Jihong Ye,&nbsp;Yongqing Huang,&nbsp;Mingxi Yang,&nbsp;Shuhu Tan,&nbsp;Xuejie Wang","doi":"10.1007/s10825-024-02235-9","DOIUrl":"10.1007/s10825-024-02235-9","url":null,"abstract":"<div><p>In this article, we illustrate the working principle of optoelectronic mixing for uni-traveling-carrier photodetector (UTC-PD). As a result of the combined influence of local oscillators (LO) and bias modulation signals (RF), the velocity and concentration of photogenerated electrons in the depletion region exhibit mixing components with frequencies of <span>(|{f}_{LO}pm {f}_{RF}|)</span>. The optoelectronic mixing signal is primarily generated by these two components, and its peak value is determined by the concentration of photogenerated electron. Moreover, the cliff layer can greatly enhance the output power of the mixed frequency signal, since it allows more photogenerated electrons to be transmitted to the depletion region.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1423 - 1430"},"PeriodicalIF":2.2,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142598804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-profile MIMO antenna for sub-6G smartphone applications with minimal footprint: an SVM-guided approach 用于 6G 以下智能手机应用、占用空间最小的低剖面 MIMO 天线:SVM 引导方法
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-10-11 DOI: 10.1007/s10825-024-02236-8
Devisowjanya Potti, Sakthi Abirami Balakrishnan, Vijaiya Kesavan Kesavan Murugesan, Soundar Rajan Gomathinayagam
{"title":"Low-profile MIMO antenna for sub-6G smartphone applications with minimal footprint: an SVM-guided approach","authors":"Devisowjanya Potti,&nbsp;Sakthi Abirami Balakrishnan,&nbsp;Vijaiya Kesavan Kesavan Murugesan,&nbsp;Soundar Rajan Gomathinayagam","doi":"10.1007/s10825-024-02236-8","DOIUrl":"10.1007/s10825-024-02236-8","url":null,"abstract":"<div><p>This paper investigates the performance of a low-profile 8 × 8 multi-input-multi-output (MIMO) antenna with zero ground clearance, designed using an intelligent antenna recommender system. A dissimilar antenna pair is employed to achieve multi-band resonance and enhance isolation for sub-6G mobile communication. The primary antenna is a loop antenna resonating at n77, n79, and n46 bands, designed with the aid of a model developed using a support vector machine (SVM). The auxiliary antenna is a modified monopole resonating at n78 and n79 bands to minimize the antenna footprint on mobile devices. An eight-antenna MIMO array is fabricated, and measured results demonstrate that the proposed antenna has a reflection coefficient of less than − 10 dB at 3.5, 3.7, 4.5, and 5.2 GHz, with diversity gain and isolation greater than 9 dBi and 15 dB, respectively. SAR analysis conducted on a human head model shows a maximum SAR value of less than 1.6 W/kg at all sub-6G bands, compliant with FCC standards. The proposed MIMO antenna offers a viable solution, even when integrated with a battery and display, without occupying internal space within a mobile phone.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1402 - 1412"},"PeriodicalIF":2.2,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142598827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of in-plane electric field on the optical properties of CO2 adsorbed 2D MoSe2 monolayer: application as a photodetector 面内电场对二氧化碳吸附二维 MoSe2 单层光学特性的影响:作为光探测器的应用
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-09-30 DOI: 10.1007/s10825-024-02233-x
S. N. Jaiswal, Bramha P. Pandey
{"title":"Impact of in-plane electric field on the optical properties of CO2 adsorbed 2D MoSe2 monolayer: application as a photodetector","authors":"S. N. Jaiswal,&nbsp;Bramha P. Pandey","doi":"10.1007/s10825-024-02233-x","DOIUrl":"10.1007/s10825-024-02233-x","url":null,"abstract":"<div><p>We present the results of an investigation of the optical characteristics of pristine and CO<sub>2</sub>-adsorbed MoSe<sub>2</sub> monolayers with (without) an external electric field. The optical parameters of interest are the absorption coefficient (<i>α</i>), reflectance (<i>R</i><sub><i>f</i></sub>), refractive index (<i>n</i>), and photoconductivity (<i>σ</i>). The impact of an external electric field (−2 × 10<sup>8</sup> V/cm) on the optical behavior of the MoSe<sub>2</sub> monolayer is systematically investigated. The results show the peaks of the real component (<span>(varepsilon_{1})</span>) of the dielectric function for both pristine and CO<sub>2</sub>-adsorbed MoSe<sub>2</sub> monolayers in the energy range of 2–3 eV. The imaginary part (<span>(varepsilon_{2})</span>) of the dielectric function exhibits a shift toward the visible region from the ultraviolet (UV) region, in which CO<sub>2</sub> is adsorbed, and this shift increases toward the visible region with the application of an external electric field. Analysis of the absorption index, refractive index, and reflectance reveals that the peaks are aligned in the visible range for both the pristine MoSe<sub>2</sub> and CO<sub>2</sub>-adsorbed MoSe<sub>2</sub> monolayers, with (without) an external electric field. The shifts of these peaks follow a similar trend as the imaginary part of the dielectric constant. Lastly, this study provides additional insight into the photo-detection performance parameters (internal quantum efficiency [IQE], external quantum efficiency [EQE], light extraction efficiency [LEE], and responsivity) for both pristine and CO<sub>2</sub>-adsorbed MoSe<sub>2</sub> monolayers, considering the presence or absence of an external field.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1325 - 1336"},"PeriodicalIF":2.2,"publicationDate":"2024-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142598928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Empirical mathematical model based on optimized parameter extraction from captured electrohydrodynamic inkjet memristor device with LTspice model 基于 LTspice 模型从捕获的电流体动力喷墨记忆晶体管器件中提取优化参数的经验数学模型
IF 2.2 4区 工程技术
Journal of Computational Electronics Pub Date : 2024-09-27 DOI: 10.1007/s10825-024-02223-z
Eman Omar, Hesham H. Aly, Ola E. Hassan, Mostafa Fedawy
{"title":"Empirical mathematical model based on optimized parameter extraction from captured electrohydrodynamic inkjet memristor device with LTspice model","authors":"Eman Omar,&nbsp;Hesham H. Aly,&nbsp;Ola E. Hassan,&nbsp;Mostafa Fedawy","doi":"10.1007/s10825-024-02223-z","DOIUrl":"10.1007/s10825-024-02223-z","url":null,"abstract":"<div><p>This research presents a simulating electrohydrodynamically (EHD) inkjet-printed memristors in LTspice environment, a popular tool for analog circuit simulation. EHD printing technique is used as one of low cost fabrication technique for fabricate flexible thin films and memristors with high precision and resolution in a scale of nanometers. Memristors are cutting-edge components for AI hardware, and they can be fabricated through various methods, including traditional semiconductor processes and printed electronics techniques. However, printed electronics fabrication based for memristor modeling accurately remains a challenge. This paper introduces a mathematical model specifically for (EHD) inkjet-printed memristors, employing empirical mathematics to ensure compatibility with LTspice. While the modeling of printed electronic devices still in the early stage—to the knowledge of the authors-this paper will discuss for the first time mathematical and Spice modeling for printed memristor. The model is validated against actual memristors with a sandwiched structure (<span>(text {Ag/ZrO}_{2}/text {Ag})</span>), showing acceptable error percentage. It involves modifying an existing memristor model by incorporating a function that reflects the characteristics of the EHD printing process. This function is designed to capture the impact of the printing technique on various device parameters, such as width and length, with a focus on accurately modeling the width in the LTspice environment. This paper presents a developed LTspice model based on the proposed empirical mathematical model. The results are based on different sizes: 40 nm, 120 nm, 680 nm, respectively.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1455 - 1472"},"PeriodicalIF":2.2,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142598878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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