Journal of Computational Electronics最新文献_第6页

Gated-anode diodes for RF and microwave rectifiers for WPT applications: a simulation study on DC and RF characteristics 用于 WPT 应用的射频和微波整流器的门控阳极二极管：直流和射频特性模拟研究

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-23 DOI: 10.1007/s10825-024-02226-w

Debaleen Biswas, Arijit Bose, Hidemasa Takahashi, Yuji Ando, Akio Wakejima

{"title":"Gated-anode diodes for RF and microwave rectifiers for WPT applications: a simulation study on DC and RF characteristics","authors":"Debaleen Biswas, Arijit Bose, Hidemasa Takahashi, Yuji Ando, Akio Wakejima","doi":"10.1007/s10825-024-02226-w","DOIUrl":"10.1007/s10825-024-02226-w","url":null,"abstract":"<div><p>AlGaN/GaN HEMT-based gated-anode diode (GAD) has been investigated with a physics-based TCAD simulation tool to understand its electrical transport characteristics. The simulation study predicted that the GAD exhibited low turn-on voltage (<span>(V_{text {on}})</span> = + 0.77 V) over a conventional Schottky barrier diode (SBD). However, the GAD suffers from low breakdown voltage (<span>(V_{text {BD}})</span>) because of strong electric field crowding at the gate edge. On the other hand, a δ-doped GaN cap (δ-DGC) layer has been able to spread out the electric field along the channel. With such modification in the epi-structure, a <span>(V_{text {BD}})</span> of ~ 335 V could be achieved with the gated-anode-to-cathode distance (<span>(L_{text {gac}})</span>) of 10 μm. TCAD-based RF simulation and small-signal S-parameter analysis were carried out to evaluate the expected RF performance of the GADs. From the transient response of the extracted small-signal equivalent circuit parameters, the cut-off frequency (<span>(f_{text {c}})</span>) of the GADs with δ-DGC layer was 35.6 GHz at the exact turn-on condition (<span>(V_{text {on}})</span>) of the device.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1368 - 1379"},"PeriodicalIF":2.2,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142598852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characteristic analysis of a line-touch mode capacitive pressure-sensitive structure 线触模式电容式压敏结构的特性分析

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-21 DOI: 10.1007/s10825-024-02234-w

Rongyan Chuai, Jianxing Wang, Xin Li, He Zhang, Zhihao Zhang

引用次数: 0

Modeling to study the shape, dimensionality and crystal structure dependence of energy band gap in nanosized semiconductors 建模研究纳米级半导体能带隙的形状、尺寸和晶体结构相关性

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-15 DOI: 10.1007/s10825-024-02229-7

Monika Goyal

{"title":"Modeling to study the shape, dimensionality and crystal structure dependence of energy band gap in nanosized semiconductors","authors":"Monika Goyal","doi":"10.1007/s10825-024-02229-7","DOIUrl":"10.1007/s10825-024-02229-7","url":null,"abstract":"<div><p>In the present paper, a simple qualitative model is proposed to study the effect of dimension and crystal structure on the energy band gap of semiconducting nanomaterials. The energy band gap variation is studied for nanoparticles, nanowires and thin films. The model takes into account the crystal structure and to incorporate the effect of crystal structure on energy band gap, lattice packing fraction is included in the mathematical formulation. The model does not involve any approximation or adjustable parameter. The study on nanosized semiconductors is performed. The model results depict the increase in the energy bandgap of nanosized semiconductors with reduction in size to nanoscale. Based on dimensionality, increment in energy band gap of spherical nanoparticles (NP’s) is more than that in cylindrical nanowires (NW’s) and thin films. The model results are found in good agreement with compared experimental and stimulated data. Drastic increase in energy band gap in nano-semiconductor of diameter or height less than 10 nm is due to the quantum confinement of charge carriers with increase in the surface area/volume ratio. With reduction in size of the Nano semiconductor, increase in the Band gap is observed leading to the blue shift. The energy band gap dependence on size in the nanorange has opened the possibility of tuning the energy band gap of the nanomaterials and use them in the opto-electronic devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1284 - 1291"},"PeriodicalIF":2.2,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analyzing the operational versatility of advanced IBC solar cells at different temperatures and also with variation in minority carrier lifetimes 分析先进 IBC 太阳能电池在不同温度下的多功能性以及少数载流子寿命的变化情况

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-14 DOI: 10.1007/s10825-024-02232-y

Shiladitya Acharyya, Dibyendu Kumar Ghosh, Dipali Banerjee, Santanu Maity

{"title":"Analyzing the operational versatility of advanced IBC solar cells at different temperatures and also with variation in minority carrier lifetimes","authors":"Shiladitya Acharyya, Dibyendu Kumar Ghosh, Dipali Banerjee, Santanu Maity","doi":"10.1007/s10825-024-02232-y","DOIUrl":"10.1007/s10825-024-02232-y","url":null,"abstract":"<div><p>In this work, doped and dopant-free carrier-selective passivating contacts have been incorporated in Interdigitated Back Contact solar cells. TCAD simulation study was done to check the performance of an IBC-SHJ (Silicon Hetero-Junction) and IBC-POLO (POLy-silicon on Oxide as seen in TOPCon) cell structures for both <i>p</i> and <i>n</i>-type wafers. The IBC-POLO structure was also repeated with HfO<sub>2</sub> and ZrO<sub>2</sub> over electron transport and hole transport layers, respectively. Simulation study was done by replacing the doped silicon layers with dopant-free Transition Metal Oxides (TMOs). NiO was used as a dopant-free hole-selective contact, whereas Nb<sub>2</sub>O<sub>5</sub> was used a dopant-free electron-selective contact. The fabrication of these materials is non-hazardous and at low temperatures due to which they are preferable over the doped Si layers that require toxic gases like phosphine, diborane, etc. and may also require high temperatures. For example, poly-Si layer applied in IBC-POLO requires an annealing temperature of over 800 °C; similarly, the diffusion of Front Surface Field (FSF) layer in normal IBC cells also requires the same high temperature. Temperature variation was done on these structures to check the dependence of solar PV parameters of each IBC structure on different temperatures. Same variation was checked with minority carrier lifetime of the silicon wafer.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1170 - 1194"},"PeriodicalIF":2.2,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142260957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Chaotic computing cell based on nanostructured phase-change materials 基于纳米结构相变材料的混沌计算单元

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-13 DOI: 10.1007/s10825-024-02221-1

A. A. Nevzorov, A. A. Burtsev, A. V. Kiselev, V. A. Mikhalevsky, V. V. Ionin, N. N. Eliseev, A. A. Lotin

引用次数: 0

Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature 二维电子气体的顺磁特性取决于浓度和温度

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-11 DOI: 10.1007/s10825-024-02231-z

P. J. Baymatov, B. T. Abdulazizov, O. M. Yunusov, Kh. N. Juraev, A. A. Saydaliev

引用次数: 0

Simulations of RF wave-induced modulation of filament growth and bipolar resistive switching in conductive bridging RAM 导电桥接 RAM 中射频波诱导的灯丝生长调制和双极电阻开关模拟

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-10 DOI: 10.1007/s10825-024-02228-8

Yifei Yin, Toshihiro Nakaoka

{"title":"Simulations of RF wave-induced modulation of filament growth and bipolar resistive switching in conductive bridging RAM","authors":"Yifei Yin, Toshihiro Nakaoka","doi":"10.1007/s10825-024-02228-8","DOIUrl":"10.1007/s10825-024-02228-8","url":null,"abstract":"<div><p>We have simulated Ag–Ge–Te-based conductive bridge RAM (CBRAM) under RF electromagnetic wave input to investigate the RF effects on heat transfer and electrochemical reaction. The RF simulations agreed with the experimental transmission coefficient S<sub>21</sub> between 0.4 and 1 GHz, indicating an effective, uniform electric field applied in the RF-applicable CBRAMs. The heat transfer simulations showed a minimal temperature increase of about 1 K under the RF wave at 10 MHz and 10 dBm, indicating negligible thermal effects. The electrochemical simulations were based on the Nernst–Planck equation, taking into account the Ag ion transport in the Ag–GeTe electrolyte by diffusion and migration. Electrode kinetics were calculated for charge transfer reactions using the Butler–Volmer equation. The cathode electrode moved at a velocity equal to the rate of Ag electrodeposition on the cathode. The electrode movement represented filament growth. The electrochemical simulations successfully reproduced filament growth, bipolar resistive switching, experimental currents, and SET/RESET voltages. In addition, the electrochemical simulations under RF waves showed a decrease in the magnitude of SET and RESET voltages, consistent with experimental observations. The RF-induced SET/RESET voltage modulation was attributed to redox reactions that changed the average ion concentration during RF cycles, accelerating filament growth and dissolution.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1380 - 1390"},"PeriodicalIF":2.2,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s10825-024-02228-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A simulation study of electrostatically doped silicene and graphene nanoribbon FETs 静电掺杂硅烯和石墨烯纳米带 FET 的模拟研究

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-10 DOI: 10.1007/s10825-024-02224-y

Armin Gooran-Shoorakchaly, Sarah Safura Sharif, Yaser Mike Banad

{"title":"A simulation study of electrostatically doped silicene and graphene nanoribbon FETs","authors":"Armin Gooran-Shoorakchaly, Sarah Safura Sharif, Yaser Mike Banad","doi":"10.1007/s10825-024-02224-y","DOIUrl":"10.1007/s10825-024-02224-y","url":null,"abstract":"<div><p>This paper evaluates the performance of electrostatic-doped silicene nanoribbon field-effect transistors (ED SiNR-FET) and graphene nanoribbon field-effect transistors (ED GNR-FET) through quantum-based electron transport simulations. It assesses the impact of ribbon widths and device geometry, revealing that ED SiNR-FET generally outperforms ED GNR-FET, particularly in terms of resistance to impurities and short-channel effects. The study identifies optimal ribbon widths for superior performance and introduces the extended channel ED (ECED) structure, which significantly enhances the <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> ratio to 3.8 × 10<sup>5</sup> in SiNR-FET compared to 3.9 × 10<sup>3</sup> in GNR-FET for 15 nm devices. Additionally, analyses of ECED SiNR-FETs and ECED GNR-FET across various channel and gate lengths suggest that ECED devices are suitable for low-power and high-performance applications, with the ECED SiNR-FET displaying excellent subthreshold swing (SS) of 64 mV/dec and high transconductance (g<sub>m</sub>) of 63 µS. This research confirms the advanced performance of SiNR-FETs over GNR-FETs and the potential of ECED SiNR-FETs in diverse applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1315 - 1324"},"PeriodicalIF":2.2,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On efficient modeling of drain current for designing high-power GaN HEMT-based circuits 为设计基于 GaN HEMT 的大功率电路建立漏极电流的高效模型

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-09 DOI: 10.1007/s10825-024-02225-x

Anwar Jarndal, Famin Rahman Rakib, Mohammad Abdul Alim

{"title":"On efficient modeling of drain current for designing high-power GaN HEMT-based circuits","authors":"Anwar Jarndal, Famin Rahman Rakib, Mohammad Abdul Alim","doi":"10.1007/s10825-024-02225-x","DOIUrl":"10.1007/s10825-024-02225-x","url":null,"abstract":"<div><p>In this paper, different modeling approaches to the drain current, including analytical and artificial neural network (ANN) modeling, are investigated. The adopted models address the inherent self-heating and kink effects, especially in high-power GaN-based high electron mobility transistors (HEMTs). Different optimization algorithms were demonstrated for extracting the model parameters, including genetic algorithm optimization (GAO), gray wolf optimization (GWO), growth optimization (GO), and particle swarm optimization (PSO). The modeling approaches are applied to DC IV measurements of 1-mm, 4-mm, and 2-mm GaN HEMTs on SiC and Si substrates. An improved optimization procedure was applied to the analytical models to find the main parameters responsible for fitting the general nonlinear behavior of the device. Then, the thermal or self-heating parameters are tuned for best fitting in the high-power dissipation region. The kink effect has been counted by adding another factor to the analytical formula to characterize the voltage dependency of this effect. The ANN modeling provides an efficient and cost-effective solution to accurately simulate the IV characteristics with less effort. In this technique, there is no need for a predefined closed formula or a complicated fitting parameter extraction process. Also, the model training was enhanced by using a genetic algorithm augmented backpropagation technique. The investigated analytical and ANN techniques were demonstrated by modeling the IV characteristics of the considered GaN HEMTs. The results obtained confirm the advantages of using ANN modeling for solving such problems and large-signal modeling applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1355 - 1367"},"PeriodicalIF":2.2,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142194985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synergistic effect of total ionizing dose and single event gate rupture in MOSFET with Si3N4–SiO2 stacked gate 带 Si3N4-SiO2 叠层栅极的 MOSFET 中总电离剂量和单次栅极破裂的协同效应

IF 2.2 4区工程技术

Journal of Computational Electronics Pub Date : 2024-09-06 DOI: 10.1007/s10825-024-02227-9

Rongxing Cao, Hanxun Liu, Kejia Wang, Dike Hu, Yiyuan Wang, Xianghua Zeng, Yuxiong Xue

引用次数: 0