Journal of Computational Electronics最新文献

{"title":"Constrained Bayesian optimization using a Lagrange multiplier applied to power transistor design","authors":"Ping-Ju Chuang,&nbsp;Ali Saadat,&nbsp;Sara Ghazvini,&nbsp;Hal Edwards,&nbsp;William G. Vandenberghe","doi":"10.1007/s10825-025-02356-9","DOIUrl":"10.1007/s10825-025-02356-9","url":null,"abstract":"<div><p>We propose a novel constrained Bayesian optimization (BO) algorithm optimizing the design process of laterally-diffused metal-oxide-semiconductor (LDMOS) transistors while realizing a target breakdown voltage (<span>({{varvec{BV}}})</span>). We convert the constrained BO problem into a conventional BO problem using a Lagrange multiplier. Instead of directly optimizing the traditional Figure-of-Merit (FOM), we set the Lagrangian as the objective function of BO. This adaptive objective function with a changeable Lagrange multiplier can address constrained BO problems which have constraints that require costly evaluations, without the need for additional surrogate models to approximate constraints. Our algorithm enables a device designer to set the target <span>({{varvec{BV}}})</span> in the design space, and obtain a device that satisfies the optimized FOM and the target <span>({{varvec{BV}}})</span> constraint automatically. Utilizing this algorithm, we explore the physical limits of the FOM for our devices in the 30 – 50 V range within the defined design space.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145167802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigating the impact of parametric optimization on efficiency and radiation degradation performance of triple junction InGaP/InGaAs/Ge solar cells","authors":"Prashant Bhaskar,&nbsp;Bhanu Pratap Dhamaniya,&nbsp;Krishna Priya Ganesan","doi":"10.1007/s10825-025-02381-8","DOIUrl":"10.1007/s10825-025-02381-8","url":null,"abstract":"<div><p>This computational study presents a comprehensive optimization approach adapted to achieve an enhanced power conversion efficiency of an InGaP/InGaAs/Ge lattice-matched triple junction solar cell through Crosslight APSYS, a TCAD device simulation package. The study focuses on optimizing device parameters, i.e., layered materials and their thicknesses and doping concentrations to improve efficiency and analyze radiation-induced performance degradation. Prior to the parametric optimization, the cell’s design was benchmarked against a typical commercially available triple junction solar cell with an efficiency close to 31%. Considering lattice matching and layer-wise bandgap energies, thickness and doping concentrations were systematically varied to identify optimum values. Our study demonstrates a decent enhancement in the efficiency of the optimized cell, reaching a value as high as 35.10%. Upon introducing the cell under particle irradiations, by means of introducing charge carrier traps, the power conversion efficiency is observed to degrade to ca. 30% and 31% upon 1 MeV electron irradiation with a fluence of 10¹⁶ cm⁻² and 10 MeV proton irradiation with a fluence of <span>(10^{13} {text{ cm}}^{ - 2})</span>, respectively. Additionally, Shockley–Read–Hall trap assisted recombination is observed to be prominent in the n-InGaAs layer and is relatively negligible across the other two active layers of the cell. Consequently, radiative recombination is observed to be suppressed in the middle subcell with increased irradiation fluences, as the traps densities are increasingly introduced with the irradiation. Both the recombination rates remain relatively unaffected in the bottom subcell with increase in irradiation fluences. Pre-optimization efficiencies under similar irradiation were ca. 27% and 28%. Though degradation levels were similar, the optimized cell showed ca. 3% higher open-circuit voltage, ca. 4% higher short-circuit current and 10–11% better efficiency, demonstrating superior end-of-life performance for space applications.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145167622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization","authors":"M. Balasubbareddy,&nbsp;K. Sivasankaran,&nbsp;A. E. Atamuratov,&nbsp;M. M. Khalilloev","doi":"10.1007/s10825-025-02384-5","DOIUrl":"10.1007/s10825-025-02384-5","url":null,"abstract":"<div><p>Junctionless stacked nanosheet FETs (JL-SNSHFETs) are advanced devices with uniformly doped active regions, offering a wider effective channel width, improved electrostatics, and reduced short-channel effects (SCEs). However, self-heating is the major concern in nanosheet FETs, negatively impacting the device's performance. RF stability is critical for devices operating in the radio frequency range, as self-heating can significantly affect it. This work presents the insights meticulously investigated using the Synopsys Sentaurus TCAD tool on the impact of self-heating on the RF stability performance of JL-SNSHFET for different geometrical parameter variations of the device. The increase in nanosheet width and thickness increases the effective channel width and thereby increases the on-current; however, it also elevates the lattice temperature due to self-heating, which, in turn, deteriorates the RF stability. A ~ 10% difference in critical frequency is observed with and without self-heating. The proposed optimized JL-SNSHFET achieves an improved <i>f</i>_<i>T</i> of 145 GHz and <i>f</i>_max of 340 GHz, becoming unconditionally stable beyond the critical frequency of 170 GHz without any stabilization network. The propounded findings expedite the RF circuit design where self-heating is a major concern.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145167376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and performance improvement of silver-gallium sulfide-TDMC heterostructure-based surface plasmon resonance nano biosensor for detection of fat in milk","authors":"Snehanagasri Malakalapalli,&nbsp;Hemanth Reddy Vajrala,&nbsp;Chella Santhosh,&nbsp;Yesudasu Vasimalla,&nbsp;Suman Maloji,&nbsp;Santosh Kumar","doi":"10.1007/s10825-025-02386-3","DOIUrl":"10.1007/s10825-025-02386-3","url":null,"abstract":"<div><p>Milk fat is an important constituent of dairy products, which strongly determines the flavor, texture, nutrition, and market price of dairy products. Determining the fat content accurately is essential for the quality control of dairy products. In this work, we investigate, numerically, the performance of a surface plasmon resonance (SPR) Nano-biosensor for milk fat detection by angular interrogation method at a wavelength of 633 nm. The proposed sensor’s design using Kretschmann configuration composed of multilayered-Sulfide-based structure targeting for enhanced effective serial detection. Silver (Ag) layer is deposited on the substrate, followed by two layers which are silver gallium sulfide (<span>({AgGaS}_{2})</span>) and lithium gallium sulfide (<span>({LiGaS}_{2})</span>). Moreover, hybrids nanomaterials like BlueP/<span>({WSe}_{2})</span>, BlueP/<span>({MoSe}_{2},)</span> BlueP/<span>({MoS}_{2})</span>, and BlueP/<span>({WS}_{2})</span> are incorporated to enhance the performance. Such materials exploit surface plasmon excitations and evanescent fields for highly sensitive fat detection. The higher field intensity and further penetration into the sensing layer contributes to the larger interaction volume, hence the increase in sensitivity of the sensor. The range of the biological analytes that can be detected by the proposed sensor is as low as 1.3450 to 1.3621 refractive index. Throughout the investigation the proposed structure shows the highest maximum sensitivity (359°/RIU), quality factor (97.42 RIU⁻¹), and detection accuracy (1.66), showing a significant improvement compared with existing work.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145167360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimized multi-functional plasmonic logic gates by the coupling of nonlinear Kerr effect","authors":"Mohamed Salah Bouaouina,&nbsp;Nadhir Djeffal,&nbsp;Mohamed Redha Lebbal,&nbsp;Abdallah Hedir","doi":"10.1007/s10825-025-02383-6","DOIUrl":"10.1007/s10825-025-02383-6","url":null,"abstract":"<div><p>In this work, we propose a novel structure of multifunctional optical AND and OR gates that can be realized for various functions in optical communications including parity checking, address recognition, data integrity verification, and data encryption/decryption. The AND and OR optical gates which are being demonstrated are built around a hybrid photonic crystal resonator that mixes nonlinear doped glass rods with metallic hollow circles. In this hybrid configuration, Ge rods material and Ag hollow circles fused in air are used as dielectric and metal rods, respectively. We use the FDTD and PWE methods to analyze the properties of the proposed hybrid structure. Surface plasmon polaritons is produced when the plasmonic mode created by the metallic hollow circles and the resonant PhC are properly coupled. This mode is highly confined to the metal–dielectric interface, leading to an enhancement of the optical field and an enhanced transmission of the proposed gates. With its small footprint of 134.6 µm², an excellent contrast ratio of 22.78 db and low consumption power equal to 0.4 W/µm². The hybrid AND and OR gates are well suited for applications in integrated opto-plasmonic devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145166348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Detection of arsenic impurities using tetracene-based molecular junctions","authors":"Sukhdeep Kaur,&nbsp;Rupendeep Kaur,&nbsp;Deep Kamal Kaur Randhawa,&nbsp;Manjit Sandhu,&nbsp;Harmandar Kaur","doi":"10.1007/s10825-025-02390-7","DOIUrl":"10.1007/s10825-025-02390-7","url":null,"abstract":"<div><p>Major advances in molecular diagnostics have fueled the search for nanosensors that can detect anomalies in their early stages of development. In this research work, we have investigated a tetracene molecule bridged between gold electrodes in a device configured for sensor application in medical diagnostics. Density functional theory (DFT) and non-equilibrium Green’s (NEGF) functions have been utilized to study the feasibility of tetracene molecular junctions for detecting the presence of arsenic and tracing its concentration. In this context, transmission spectra, molecular-projected self-consistent Hamiltonian (MPSH), current–voltage curve, conductance trends, and HOMO–LUMO gap (HLG) at different operating voltages are determined. Notably, during exposure of the molecular junction to varying concentrations of arsenic, substantial changes are detected in the electron transport properties. Both the conductance and current of the molecular junction escalates with the increase in impurity of the arsenic atoms, thus proving that tetracene is a suitable candidate to be explored as a nanosensor. </p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145165305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of structural and conformational stability, electronic transition, NLO, FMO, and DSSC parameters of trans-dichloro-nitro chalcone isomers: a DFT insight","authors":"Hazhi Hasan Hussein,&nbsp;Ghazwan Faisal Fadhil","doi":"10.1007/s10825-025-02378-3","DOIUrl":"10.1007/s10825-025-02378-3","url":null,"abstract":"<div><p>The density functional theory (DFT) with Becke’s three-parameter Lee–Yang–Parr (B3LYP) hybrid functional and the 6-311G(d,p) basis set was utilized to investigate the structural and conformational stability, the energies of the highest occupied molecular orbital (HOMO), and lowest unoccupied molecular orbital (LUMO), as well as related reactivity parameters, electrostatic potential, electronic transitions, nonlinear optical (NLO) properties, and dye-sensitized solar cell (DSSC) characteristics of six isomers of (<i>E</i>)-3-(i,j-dichlorophenyl)-1-(4′-nitrophenyl)prop-2-en-1-one, where i, j = 2–6 and i ≠ j. The <i>s-cis</i> conformers are more stable than the <i>s-trans</i> conformers. The <i>syn</i> conformers are more stable for five of the isomers than their <i>anti-syn</i> counterparts. The (3,5) isomer was the most stable among the isomers. All isomers demonstrated the ability to inject and recover electrons. The (2,5) isomer exhibited the highest exciton binding energy, while the (3,4) isomer showed the lowest dye regeneration driving force. The highest open-circuit voltage was observed for the (2,6) and (2,3) isomers. The (3,4) isomer had the highest light-harvesting efficiency, whereas the (2,5) isomer had the lowest. All chalcones exhibit higher first-order hyperpolarizability <i>β</i> values than urea, with the <i>anti</i>-(3,4) isomer having the highest <i>β</i> and the smallest (HOMO–LUMO) energy gap. TD-DFT (B3LYP/6-311G(d,p)) in the gas phase reveals that the chalcones display two UV bands. Band 1 arises from the electronic transition between the HOMO and LUMO. However, band 2 consists of electron excitation from HOMO and HOMO-2 to LUMO + 1. The chalcones investigated show promise as candidates for NLO and DSSC applications. </p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145164989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"THz graphene circulator with quadrupole mode resonator","authors":"Victor Dmitriev,&nbsp;Thiago Oliveira","doi":"10.1007/s10825-025-02379-2","DOIUrl":"10.1007/s10825-025-02379-2","url":null,"abstract":"<div><p>We present a compact and efficient three-port graphene-based circulator operating in the terahertz (THz) frequency range. Conventional designs are predicated on dipole resonances. In contrast, the present approach exploits the quadrupole mode of a circular graphene resonator, magnetized by a perpendicular direct current magnetic field. The structure is composed of a single-layer graphene resonator that is coupled to three graphene waveguides. These waveguides are supported by silica and silicon substrates. Through the optimization of resonator geometry and the tuning of graphene chemical potential, a substantial reduction in operational requirements was achieved, enabling functionality with a magnetic field of 0.2 T and a Fermi energy of 0.1 eV. Full-wave simulations performed in COMSOL Multiphysics demonstrate excellent nonreciprocal performance, with isolation better than –21 dB, insertion loss around –2.6 dB, and reflection of –18 dB at 5.38 THz. The frequency response is in good agreement with the predictions of temporal coupled-mode theory (TCMT), which confirms a fractional bandwidth of approximately 6.3% around the central frequency of 5.58 THz under the applied magnetic bias. A comparison of the proposed circulator with existing designs reveals a substantial reduction in both its physical dimensions and its weight. Furthermore, the circulator functions under conditions that demand less voltage and magnetic field strength than existing designs. In conclusion, the practical feasibility of device fabrication is discussed, with a focus on the compatibility of the proposed structure with current graphene-based photonic manufacturing technologies.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145164714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fast approximate solutions for solar cell I–V characteristics using resistance–diode circuits: bridging circuit theory and photovoltaics","authors":"Martin Ćalasan","doi":"10.1007/s10825-025-02380-9","DOIUrl":"10.1007/s10825-025-02380-9","url":null,"abstract":"<div><p>This letter presents novel approximate analytical solutions for modeling solar cells’ current–voltage (I–V) characteristics by applying resistance–diode (RD) circuit approaches. Three different approximation methods are developed and used to modified solar cell equivalent circuits, including single, double, and triple-diode configurations. The proposed solutions demonstrate excellent agreement with numerical simulations and experimental measurements, while achieving significant reductions in computational time. These features make the methods suitable for real-time applications in power electronics and smart grid environments. The approach provides a valuable analytical tool for enhancing photovoltaic modeling and strengthens the connection between circuit theory and solar energy systems.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145163439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Application of machine learning for predicting the millimetre-wave and sub-millimetre-wave characteristics of avalanche transit time sources","authors":"Prerona Sanyal,&nbsp;Sneha Ray,&nbsp;Aritra Acharyya,&nbsp;Arndam Biswas,&nbsp;Rudra Sankar Dhar","doi":"10.1007/s10825-025-02382-7","DOIUrl":"10.1007/s10825-025-02382-7","url":null,"abstract":"<div><p>We explore the application of artificial neural networks (ANNs) for predicting the millimetre-wave (mm-wave) and sub-millimetre-wave (sub-mm-wave) characteristics of double-drift region (DDR) Si IMPATT diodes. The proposed ANN models predict key parameters such as DC, large-signal (L-S) performance, and avalanche noise characteristics across frequencies ranging from 94 to 500 GHz. A dataset derived from self-consistent quantum drift–diffusion (SCQDD) simulations is used to train the ANN models, which accurately capture the influence of structural, doping, and biasing variations. The ANN models showed a significant reduction in computational time, predicting device characteristics in just 4.4–15% of the time required by SCQDD simulations, while maintaining high accuracy. The mean square error (MSE) between ANN predictions and SCQDD simulations for breakdown voltage and power output was observed to be in the order of 10⁻³ Unit², indicating excellent predictive performance. The models were validated against experimental data, showing strong agreement in terms of power output, efficiency, and noise characteristics. This work demonstrates that machine learning can effectively replace traditional time-intensive simulations, making it a promising approach for the rapid design and optimization of high-frequency semiconductor devices.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"24 5","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145162942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}