Analysis of subharmonic phase control in cavity-coupled resonant tunneling diode oscillators

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-07-29 DOI:10.1007/s10825-025-02387-2

Jonas Watermann, Enes Mutlu, Jonathan Abts, Christian Preuss, Nils Weimann

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引用次数: 0

Abstract

This work proposes an efficient semi-numerical scheme to simulate phase and frequency modulation in noisy resonant tunneling diode (RTD) oscillators coupled to parasitic cavity modes. Using a separation of timescales, a compact amplitude-phase description of the coupled system is derived. In this compact system, phase modulation by fundamental and subharmonic injection locking is investigated regarding the influence of amplitude- and phase noise, the influence of external cavity modes and the limitations in the modulation bandwidth and stability. The stability of phase control against cycle slips induced by the phase modulation is expressed using a diffusion coefficient. The compact system accurately models experimental data of RTD oscillators presented in this paper, which show a strong correlation of module integration on frequency and phase control at oscillation frequencies of 550 GHz. The method lays a foundation for compact and dynamic phase-amplitude descriptions of cavity-coupled RTD oscillators and arrays for future applications in localization and sensing, in which the interaction between the RTD and external resonance modes is decisive.

查看原文本刊更多论文

腔耦合谐振隧道二极管振荡器的次谐波相位控制分析

本工作提出了一种有效的半数值方案来模拟与寄生腔模式耦合的噪声谐振隧道二极管（RTD）振荡器的相位和频率调制。利用时间尺度的分离，导出了耦合系统的紧凑幅相描述。在这个紧凑的系统中，研究了基频和次谐波注入锁定的相位调制，考虑了振幅和相位噪声的影响，外腔模式的影响以及调制带宽和稳定性的限制。用扩散系数表示相位控制对相位调制引起的周期滑动的稳定性。紧凑的系统精确地模拟了本文所提出的RTD振荡器的实验数据，表明在550 GHz振荡频率下，模块集成在频率和相位控制上具有很强的相关性。该方法为腔耦合RTD振荡器和阵列的紧凑和动态相位振幅描述奠定了基础，为未来定位和传感应用奠定了基础，其中RTD与外部谐振模式之间的相互作用是决定性的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.