基于电荷阱的三维NAND闪存程序（PGM）运行的半解析物理瞬态模型

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2025-07-24 DOI:10.1007/s10825-025-02385-4

Jinil Yoo, Haechan Choi, Hyungcheol Shin

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引用次数: 0

摘要

本文提出了三维栅极全能（GAA）圆柱NAND闪存的一种新的程序（PGM）瞬态模型。在以前的模型中添加了一个发射项，并将其组合成具有不同的受体/供体陷阱水平的紧凑形式。利用Shockley-Read-Hall （SRH）复合理论求解连续性方程，跟踪导带（CB）自由电子的浓度。利用电子/空穴浓度得到了阈值电压瞬态，并用该模型标定了单步/增量步进脉冲规划（ISPP）脉冲实验数据，验证了该模型的有效性。

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A semi-analytical physics-based transient model for program (PGM) operation of charge-trap-based 3-D NAND flash memories

In this paper, we propose a new program (PGM) transient model for three-dimensional (3-D) gate-all-around (GAA) cylindrical NAND flash memory. An emission term is added to previous models and is combined into a compact form with distinct acceptor/donor-like trap levels. The continuity equation is solved, including Shockley–Read–Hall (SRH) recombination theory to track the concentration of the conduction band (CB) free electrons. The threshold voltage transient is obtained from the electron/hole concentrations, and single/incremental step pulse programming (ISPP) pulse experimental data are calibrated with the model to check its validity.

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.