Characteristics of a V-shaped rectenna for 28.3 THz energy harvesting

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Aboubacar Savadogo, Thomas Nyachoti Nyangonda, Bernard Odhiambo Aduda, Uli Lemmer, Mohamed Hussein
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引用次数: 0

Abstract

A rectenna structure based on a potentially printable V-shaped nanoantenna (VSNA) design is introduced and numerically analyzed. The characteristics of the VSNA structure have been investigated through the electric field enhancement and radiation efficiency used as figures of merit to evaluate its performance. A comparative study has been performed between the VSNA and a conventional dipole THz antenna based on the same dimension constraints. Therefore, the VSNA has shown better and more localized field enhancement at the arm tips. Furthermore, an optimization process has been carried out to maximize the electric field at the resonance frequency (28.3 THz). The suggested design offers more than 300% improvement in electric field confinement compared to a conventional dipole antenna at 28.3 THz. This enhancement is attributed to the tip-to-tip geometry, leading to a highly localized field at the tip. Further, the optimized VSNA design is employed to form a rectenna structure by inserting an ultra-thin insulator layer between the tips of the antenna arms. The reported rectenna structure increases total efficiency from 11 to 26.58%, with a 141% improvement over previously reported work. Beyond the potentialities presented by the proposed design, its simplicity makes it manufacturable for efficient energy harvesting applications. Finally, the metal–insulator–metal (MIM) diode rectification capabilities have been investigated through a quantum mechanical simulator (built on MATLAB software) with aluminum oxide (Al2O3) as an insulator sandwiched between gold (Au) and silver (Ag). The suggested MIM diode (Au/Al2O3/Ag) offers a zero–bias responsivity of 0.93 A/W, which is higher than the previous work based on Al2O3 which was 0.5 A/W.

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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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