Analyzing the impact of drain-engineered DG GNR-TFET on analog/RF performance metrics

This paper presents a novel drain-engineered (DE) double-gate (DG) graphene nanoribbon (GNR) tunnel field-effect transistor (TFET) designed to address the limitations of conventional DG GNR-TFETs. The proposed device introduces a p⁺-n–n configuration, replacing the conventional p⁺-i-n⁺ structure by incorporating uniform n-type doping (N_cd) in both the channel and drain regions. This structural modification enhances the electric field at the source-channel junction, significantly improving ON-state band-to-band tunneling (BTBT) current. The performance of the optimized GNR-TFET is evaluated by varying N_cd, and the optimal configuration with N_cd = 2.5 × 10¹² cm⁻² exhibits: a 5.5-order reduction in ambipolar current (I_AMB) and an improvement in the I_ON/I_OFF ratio by ~6.88 × 10⁴%. Furthermore, the device demonstrates superior analog and RF performance, including: ~1.4% increase in transconductance (g_m), a ~189% enhancement in the transconductance generation factor (TGF), and ~46.2% rise in the cut-off frequency (f_T). These improvements establish the proposed DE-DG GNR-TFET as a high-performance, energy-efficient candidate for next-generation electronic and RF applications. Additionally, the optimal device exhibits superior derived RF performance, achieving enhancements of 52.2% in the transconductance frequency product (TFP), 60.3% in the gain frequency product (GFP), and 216% in the gain transfer frequency product (GTFP). Finally, a linearity analysis is conducted to compare the DE-DG GNR-TFET with the conventional GNR-TFET, further validating the effectiveness of uniform n-type doping.