Neurobiological transition of magnetized and demagnetized dynamism for fractional Hindmarsh–Rose neuron model via fractal numerical simulations

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Kashif Ali Abro, Imran Qasim Memon, Khidir Shaib Mohamed, Khaled Aldwoah
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Abstract

This manuscript investigates how magnetic and non-magnetic effects influence the firing patterns, oscillations, and synchronization properties of the Hindmarsh–Rose neuron model under different magnetic conditions. The development of a fractal–fractional Hindmarsh–Rose neuron model is proposed for investigating self-similarity across different scales to analyze and understand the complexities when extreme magnetic flux varies and reaches its critical value. The mathematical modeling of the Hindmarsh–Rose neuron model is established under an application of the Caputo–Fabrizio and Atangana–Baleanu fractional differential operators. For the sake of numerical simulations via the Adams–Bashforth–Moulton method, the discretization of spatial and time domains on fractal–fractional derivatives is employed to generate numerically powerful schemes within approximate accuracy. For understanding the brain function and neural oscillations, the magnetized and demagnetized Hindmarsh–Rose neuron model revealed suppressed neuronal activity and the effects of transcranial magnetic stimulation. Our results suggested two aspects: one is trapping of neurons, striking phenomena and firing patterns under demagnetization, while the other is neurological disorders, spiking and bursting in neurons based on neural interfaces under demagnetization.

分形数值模拟分数阶Hindmarsh-Rose神经元模型磁化与退磁动态的神经生物学转换
本文研究了磁和非磁效应如何影响Hindmarsh-Rose神经元模型在不同磁条件下的放电模式、振荡和同步特性。提出了一种分形-分数形Hindmarsh-Rose神经元模型,用于研究不同尺度上的自相似性,以分析和理解极端磁通量变化并达到临界值时的复杂性。应用Caputo-Fabrizio和Atangana-Baleanu分数阶微分算子,建立了Hindmarsh-Rose神经元模型的数学模型。为了通过Adams-Bashforth-Moulton方法进行数值模拟,在分形-分数阶导数上采用了空间和时间域的离散化,在近似精度范围内生成了数值上强大的格式。为了了解脑功能和神经振荡,磁化和退磁的Hindmarsh-Rose神经元模型揭示了经颅磁刺激抑制神经元活动和影响。我们的研究结果揭示了两个方面的问题:一是退磁作用下神经元的捕获、撞击现象和放电模式;二是退磁作用下基于神经界面的神经元的突峰和破裂等神经紊乱。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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