几何参数对AlGaN/GaN异质结构MOS-HEMT生物传感器的影响

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-12-24 DOI:10.1007/s10825-024-02247-5

Abdellah Bouguenna, Driss Bouguenna, Amine Boudghene Stambouli, Aasif Mohammad Bhat

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引用次数: 0

摘要

在这项工作中，我们提出了用于蛋白质检测的AlGaN/GaN金属氧化物半导体高电子迁移率晶体管（MOS-HEMT）生物传感器的研究。研究了栅极宽度、栅极长度、AlGaN层厚度、氧化物层厚度、氧化物类型（HfO2、Al2O3和SiO2）等工艺参数对MOS-HEMT生物传感器输出特性、灵敏度和C-V特性的影响。将所建立的模型与实验数据进行了比较，验证了模型的有效性。在蛋白质介电常数为2.5时，当Wg = 100µm, Lg= 0.3µm, dAlGaN=15 nm， SiO2厚度为25 nm时，GaN/ AlGaN - mos - hemts的漏极电流变化最大，为208.08 mA。

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Impact of geometrical parameters on AlGaN/GaN heterostructure MOS-HEMT biosensor

In this work, we present the study of AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistor (MOS-HEMT) biosensors for protein detection. We study the effects of technological parameters including the gate width, gate length, AlGaN layer thickness, oxide thickness layer, and oxide type including HfO₂, Al₂O₃, and SiO₂ on the output characteristics, sensitivity of the MOS-HEMT biosensors, and C–V characteristics. The model developed is compared with experimental data to verify its validity. The AlGaN/GaN bio-MOS-HEMTs show the greatest change in drain current of 208.08 mA with W_g = 100 µm, L_g= 0.3 µm, d_AlGaN=15 nm, and SiO₂ oxide thickness of 25 nm at protein permittivity of 2.5.

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.