Current and voltage characteristics of a thermoelectric couple

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-12-18 DOI:10.1007/s10825-024-02267-1

Tinggang Zhang

引用次数: 0

Abstract

Formulations to determine the electric field and the electrostatic potentials in a thermoelectric couple through solving the Poisson’s equation are introduced in this work. Analytical approximations of the auxiliary energies introduced in the author’s earlier work in the relaxation time approximation of the Boltzmann transport equation are developed based on the coupled equations of heat and electric current. These auxiliary energies are used in the Poisson’s equation at each temperature node along the thermoelectric leg to obtain a set of algebraic equations with the electric field and the electrostatic potentials as unknowns. The algebraic equations are then solved using the derived algorithm and the boundary conditions determined by the continuity and the carrier concentration equations.

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.