Microelectronics Reliability最新文献_第7页

Vertical scale-down of Cu/low-k interconnect development for BEOL reliability improvement of 12nm DRAM

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-06 DOI: 10.1016/j.microrel.2025.115650

J.H. Lee, B.W. Woo, Y.M. Lee, N.H. Lee, Y.Y. Lee, Y.S. Lee, S.B. Ko, S. Pae

引用次数: 0

Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-05 DOI: 10.1016/j.microrel.2025.115666

M. Cioni , G. Giorgino , A. Chini , N. Zagni , G. Cappellini , S. Principato , C. Miccoli , T. Wakrim , M.E. Castagna , A. Constant , F. Iucolano

{"title":"Effect of 2DEG density and Drain/Source Field Plate design on dynamic-RON of 650 V AlGaN/GaN HEMTs","authors":"M. Cioni , G. Giorgino , A. Chini , N. Zagni , G. Cappellini , S. Principato , C. Miccoli , T. Wakrim , M.E. Castagna , A. Constant , F. Iucolano","doi":"10.1016/j.microrel.2025.115666","DOIUrl":"10.1016/j.microrel.2025.115666","url":null,"abstract":"<div><div>The effect of 2DEG density and Drain/Source Field Plate design on dynamic-R<sub>ON</sub> of 650 V p-GaN gate AlGaN/GaN HEMTs is investigated in this work. Devices presenting three different AlGaN barrier and p-GaN layer design have been tested by means of Capacitance-Voltage measurements, Static V<sub>DS</sub> stress and Pulsed I-V characterization. C<img>V measurements allowed the extraction of 2DEG density, while Static V<sub>DS</sub> stress and Pulsed I-V put in evidence the partial recovery of the dynamic-R<sub>ON</sub> at high V<sub>DS,stress</sub>, potentially explained by a field-driven hole generation mechanism that partially compensates negatively ionized Carbon acceptors in the GaN Buffer. This hypothesis is in line with the trends observed for different 2DEG density and different drain field-plate designs, suggesting that a higher electric field under the drain terminal can significantly reduce R<sub>ON</sub>-degradation at high voltages, due to an easier holes generation. Furthermore, Pulsed I-V tests under resistive load switching mode have been addressed, highlighting the impact of the distance between source field plate and drain field plate on the dynamic-R<sub>ON</sub> degradation in conventional switch mode operations.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115666"},"PeriodicalIF":1.6,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143552894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sorption getter characterization under wafer-level packaging (WLP) conditions

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-05 DOI: 10.1016/j.microrel.2025.115677

H. Duchemin, D. Bouchu

引用次数: 0

A screening test of GaN-HEMTs for improvement of breakdown voltage uniformity

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-05 DOI: 10.1016/j.microrel.2025.115643

Wataru Saito, Shin-ichi Nishizawa

引用次数: 0

SMART protection design of automotive power distribution systems with temperature-based electronic fuses: Mathematical background, design guidelines and drawbacks of energy-based methods

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-05 DOI: 10.1016/j.microrel.2025.115635

M. Bernardoni, R. Illing, M. Tripolt, C. Djelassi-Tscheck

引用次数: 0

Selective hardening of RISCV soft-processors for space applications

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-04 DOI: 10.1016/j.microrel.2025.115667

G. Cora, C. De Sio, S. Azimi, L. Sterpone

引用次数: 0

Reliability prediction of multi-level power supply system based on Failure Precursor Parameters 基于故障前兆参数的多级电源系统可靠性预测

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-04 DOI: 10.1016/j.microrel.2025.115656

W.M. Liu , C. Chen , K.W. Xiao , Y. Yu , W. Zheng , M.T. Feng , G.F. Zhai

引用次数: 0

Driving waveform modification for investigating trade-off between switching loss and gate overshoot in SiC MOSFETs

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-04 DOI: 10.1016/j.microrel.2025.115653

Bang-Ren Chen , Cheng Sung , Yu-Sheng Hsiao , Wei-Chen Yu , Wei-Cheng Lin , Surya Elangovan , Yi-Kai Hsiao , Hao-Chung Kuo , Chang-Ching Tu , Tian-Li Wu

{"title":"Driving waveform modification for investigating trade-off between switching loss and gate overshoot in SiC MOSFETs","authors":"Bang-Ren Chen , Cheng Sung , Yu-Sheng Hsiao , Wei-Chen Yu , Wei-Cheng Lin , Surya Elangovan , Yi-Kai Hsiao , Hao-Chung Kuo , Chang-Ching Tu , Tian-Li Wu","doi":"10.1016/j.microrel.2025.115653","DOIUrl":"10.1016/j.microrel.2025.115653","url":null,"abstract":"<div><div>SiC MOSFETs are crucial for efficient power conversion in electric vehicles, especially in the traction inverters operating on 800-V battery architectures. Their unipolar nature offers significantly lower switching losses compared to bipolar Si IGBTs. However, achieving high efficiency without compromising reliability remains a challenge. This study investigates the impact of driving waveforms on the SiC MOSFET switching loss and overshoot. Unlike conventional gate drivers, our approach involves a closed-loop amplifier combined with a push-pull circuit, enabling controllable gate driving waveforms through strategically placing a low-pass filter before the amplifier, so called the pre-RC method. Compared to the conventional method of placing R<sub>G</sub> in front of the gate, the pre-RC method shows notable decrease in turn-on switching loss for the t<sub>rising</sub> shorter than about 0.4 μs. The lower switching loss can be attributed to the larger |dV<sub>GS</sub>/dt|at around the V<sub>th</sub> of the SiC MOSFET. However, the larger|dV<sub>GS</sub>/dt|also leads to the larger V<sub>GS</sub> overshoot. This work demonstrates that a well balance between the switching loss and overshoot can be found by optimizing the driving waveform.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"167 ","pages":"Article 115653"},"PeriodicalIF":1.6,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of gate oxide thickness on gate latent damage induced by heavy ion in SiC power MOSFETs

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-03 DOI: 10.1016/j.microrel.2025.115663

Shiwei Zhao , Yuzhu Liu , Xiaoyu Yan , Peipei Hu , Xinyu Li , Qiyu Chen , Pengfei Zhai , Teng Zhang , Yang Jiao , Youmei Sun , Jie Liu

{"title":"Effect of gate oxide thickness on gate latent damage induced by heavy ion in SiC power MOSFETs","authors":"Shiwei Zhao , Yuzhu Liu , Xiaoyu Yan , Peipei Hu , Xinyu Li , Qiyu Chen , Pengfei Zhai , Teng Zhang , Yang Jiao , Youmei Sun , Jie Liu","doi":"10.1016/j.microrel.2025.115663","DOIUrl":"10.1016/j.microrel.2025.115663","url":null,"abstract":"<div><div>SiC materials and devices hold significant promise for aerospace applications owing to their high thermal conductivity, temperature tolerance, and resistance to harsh conditions. However, SiC power devices often encounter single event effects (SEEs) induced by high-energy ions, which limit the applications in space radiation environments. In this study, we demonstrate the impact of thickness of gate oxide layer on latent gate oxide damage in Silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs) during heavy-ion irradiation, by using a combination of experiments and technical computer-aided design (TCAD) simulations. The study exposes SiC MOSFETs with gate oxide thicknesses of 40 nm and 60 nm to 78Kr ion irradiation followed by post-irradiation gate stress (PIGS) tests, scrutinizing failure characteristics induced by irradiation. Through TCAD simulations, the internal dynamics of the gate oxide layer are scrutinized, revealing that escalated electric fields and localized energy pulses predominantly precipitate gate dielectric layer damage. The results suggest that gate oxide thickness markedly impacts latent gate damage, with thinner oxide layers exhibiting heightened susceptibility to electrical breakdown. These findings enrich the comprehension of SiC power device reliability in radiation-rich environments, furnishing invaluable insights for aerospace applications.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"167 ","pages":"Article 115663"},"PeriodicalIF":1.6,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Heat-resistant durability of AMB substrates for SiC power devices: AlN and Si3N4, which one is thermally strong?

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-03 DOI: 10.1016/j.microrel.2025.115676

Yun-Chan Kim , Dong-Yurl Yu , Shin-Il Kim , Yong-Mo Kim , Dongjin Byun , Junghwan Bang , Dongjin Kim

{"title":"Heat-resistant durability of AMB substrates for SiC power devices: AlN and Si3N4, which one is thermally strong?","authors":"Yun-Chan Kim , Dong-Yurl Yu , Shin-Il Kim , Yong-Mo Kim , Dongjin Byun , Junghwan Bang , Dongjin Kim","doi":"10.1016/j.microrel.2025.115676","DOIUrl":"10.1016/j.microrel.2025.115676","url":null,"abstract":"<div><div>In terms of long-term reliability, the present study investigated the heat-resistant durability of both AlN- and Si<sub>3</sub>N<sub>4</sub> cored active metal brazing (AMB) substrates to demonstrate which material can be a better option for use in silicon carbide (SiC) power applications. Interfacial degradation behaviors, peeling strengths, and fracture modes of the AlN- and Si<sub>3</sub>N<sub>4</sub>-AMB substrates were carried out before and after thermal shock cycling tests. The interfacial microstructure analysis of the AlN- and Si₃N₄-AMB substrates observed different brazing filler metal (BFM) reaction layers depending on the type of ceramic. As a result, it was noteworthy that AlN and Si<sub>3</sub>N<sub>4</sub>-AMB substrates subjected to repeated thermal shock cycles with Δ190 °C for up to 1000 cycles represented different failure modes with different strength in the peel strength test, respectively. Namely, these two kinds of ceramic type AMB substrates have fundamental differences in thermal shock durability. Nevertheless, cracks between the AMB and ceramic layers were equally caused on the edge side of the AlN and Si<sub>3</sub>N<sub>4</sub> cases after the thermal shock test. These cracks are the underlying principles that explain the load-extension plots in the peel strength test. This study systematically discussed the heat-resistant reliability of AMB substrates with AlN and Si<sub>3</sub>N<sub>4</sub> as key materials for application to next-generation SiC power devices.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"167 ","pages":"Article 115676"},"PeriodicalIF":1.6,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0