Research on high-power high-frequency electrical transmission characteristics of through glass via interconnections

Abstract

Through Glass Via (TGV) have attracted significant attention as advanced package solutions. Compared to silicon, glass has lower dielectric losses but thermal conductivity two orders of magnitude lower. This may introduce transmission degradation due to self electro-thermal coupling in high-power, high-frequency signal applications such as RadioFrequency (RF) transceiver and high-performance computing chip package. To address the issue, A Microstrip Resonant Ring (MRR) test structure was designed and fabricated for temperature-dependent high-frequency parameter extraction. Coplanar Waveguide (CPW) and Substrate integrated waveguide (SIW) test structures were designed and fabricated for high-frequency transmission tests at various temperatures. A quadruple redundant TGV connected CPW test structure was designed and fabricated for high-frequency high-power self electro-thermal testing, followed with self electro-thermal coupling simulation to verify experimental results. The research reveals that, under high-power, high-frequency signal input, transmission losses in TGV interconnects are primarily dominated by conductor losses. The optimized quadruple redundant TGV connected CPW test structure demonstrated insertion losses of 0.51 dB, 0.94 dB, and 2.04 dB under input conditions of 10 W@6GHz, 7.9 W@12GHz, and 6.3 W@18GHz, respectively. The corresponding maximum temperatures recorded were 36.2 °C, 38.4 °C, and 55 °C for these operating conditions.