Microelectronics Reliability最新文献

The thermal cycling response of Sn-Zn, Sn-Ag-Cu and Sn-Bi solder in industrial production 工业生产中Sn-Zn、Sn-Ag-Cu和Sn-Bi焊料的热循环响应

IF 1.9 4区工程技术

Microelectronics Reliability Pub Date : 2025-10-04 DOI: 10.1016/j.microrel.2025.115925

Tianyuan Chen , Mengran Zhou , Hao Fu , Xiaohua Xu , Xinhua Dong , Yunjian Zhao , Gaoqiang Chen , Gong Zhang , Qingyu Shi

引用次数: 0

Exploring the use of extreme temperatures to facilitate fault propagation in ReRAMs 探索在reram中使用极端温度来促进故障传播

IF 1.9 4区工程技术

Microelectronics Reliability Pub Date : 2025-09-29 DOI: 10.1016/j.microrel.2025.115919

T.S. Copetti , A. Chordia , M. Fieback , M. Taouil , S. Hamdioui , L.M. Bolzani Poehls

{"title":"Exploring the use of extreme temperatures to facilitate fault propagation in ReRAMs","authors":"T.S. Copetti , A. Chordia , M. Fieback , M. Taouil , S. Hamdioui , L.M. Bolzani Poehls","doi":"10.1016/j.microrel.2025.115919","DOIUrl":"10.1016/j.microrel.2025.115919","url":null,"abstract":"<div><div>Resistive Random-Access Memories (ReRAMs) represent a promising candidate to complement and/or replace CMOS-based memories adopted in several emerging applications. Despite all their advantages – mainly CMOS process compatibility, zero standby power, and high scalability and density – the use of ReRAMs in real applications depends on guaranteeing their quality after manufacturing. As observed in CMOS-based memories, ReRAMs are also susceptible to manufacturing deviations, including defects and process variations, that can cause faulty behaviors different from those observed in CMOS technology, increasing not only the manufacturing test complexity but also the time required to perform the test. In this context, this paper proposes to study the use of temperature to facilitate fault propagation in ReRAMs, reducing the required test time. A case study composed of a 3x3 word-based ReRAM with peripheral circuitry implemented based on a 130 nm Predictive Technology Model (PTM) library was adopted. During the proposed study, a total of 17 defects were injected in different positions of the ReRAM cell, and their respective faulty behavior was classified into conventional and unique faults, considering three different temperatures (25, 100, and -40 °C). The obtained results show that the temperature can, depending on the position of the defect, facilitate fault propagation, which reduces the time required for performing manufacturing testing.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"175 ","pages":"Article 115919"},"PeriodicalIF":1.9,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145226994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ionizing radiation damage and accuracy degradation in PMOS dosimeter constant current sources under bias-dose rate coupling 偏置-剂量率耦合下PMOS剂量计恒流源电离辐射损伤与精度退化

IF 1.9 4区工程技术

Microelectronics Reliability Pub Date : 2025-09-25 DOI: 10.1016/j.microrel.2025.115922

Jing Sun , Xingyao Zhang , Mengjun Sun , Gang Yu , Yiyuan Wang , Lin Wen , Xuefeng Yu , Qi Guo , Yudong Li

引用次数: 0

Effect of Bi element on microstructure, strength and failure mechanism of Sn-Cu-In solder alloy Bi元素对Sn-Cu-In钎料合金组织、强度及失效机理的影响

IF 1.9 4区工程技术

Microelectronics Reliability Pub Date : 2025-09-25 DOI: 10.1016/j.microrel.2025.115924

Jinlong Zhang , Chenghao Zhang , Zhen Pan , Chun Li , Xiaoqing Si , Zongjing He , Yang Liu , Jian Cao

{"title":"Effect of Bi element on microstructure, strength and failure mechanism of Sn-Cu-In solder alloy","authors":"Jinlong Zhang , Chenghao Zhang , Zhen Pan , Chun Li , Xiaoqing Si , Zongjing He , Yang Liu , Jian Cao","doi":"10.1016/j.microrel.2025.115924","DOIUrl":"10.1016/j.microrel.2025.115924","url":null,"abstract":"<div><div>In this paper, the changes of the microstructure, wettability, and mechanical properties, of the Sn-0.5Cu-3In solder alloy were studied after adding 0.3–0.7 wt% Bi. The addition of Bi to Sn-0.5Cu-3In solder alloy resulted in changes to the microstructure, with a decrease in grain size and an increase in uniformity. The β-Sn phase size also decreased, and the distribution of intermetallic compounds became denser. When the amount of Bi element added is less than 0.5 wt%, the impact performance of the solder alloy changes little, and the impact work reaches a maximum of 62.2 J when 0.5 wt% Bi is added. The shear test results of the solder joints show that the addition of Bi element effectively improves the reliability of the solder joints, and the shear strength reaches a maximum value of 46.8 MPa at the addition of 0.5 wt% of Bi element. This is because the Bi and β-Sn forms a solid solution, resulting in solid solution strengthening. And the Bi element refines the grains of the solder alloy, so the shear strength of the solder joint is significantly improved.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"175 ","pages":"Article 115924"},"PeriodicalIF":1.9,"publicationDate":"2025-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145159529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Research on the lifetime model of IGBT modules based on coupling failure of bonding wire and solder layer 基于焊线与焊层耦合失效的IGBT模块寿命模型研究

IF 1.9 4区工程技术

Microelectronics Reliability Pub Date : 2025-09-24 DOI: 10.1016/j.microrel.2025.115923

Biao Li , Zhaolei Zheng , Feng Wang , Zhuangzhuang Li , Jun Liu

{"title":"Research on the lifetime model of IGBT modules based on coupling failure of bonding wire and solder layer","authors":"Biao Li , Zhaolei Zheng , Feng Wang , Zhuangzhuang Li , Jun Liu","doi":"10.1016/j.microrel.2025.115923","DOIUrl":"10.1016/j.microrel.2025.115923","url":null,"abstract":"<div><div>To address the issues of insulated gate bipolar transistor module failure and lifetime prediction, a physical model of the insulated gate bipolar transistor module has been established. Through thermo-electrical structural coupling simulations, the failure mechanisms of the bonding wire and solder layer have been analyzed. Based on the failure mechanisms of both components, a lifetime model for insulated gate bipolar transistor modules, considering the coupling failures of the bonding wire and solder layer, has been constructed. Additionally, the failure model has been fitted using data from power cycling tests, and a comparative analysis has been conducted between the parallel failure lifetime model and the energy-based lifetime model and Coffin-Manson lifetime model in terms of prediction accuracy. The results indicate that the insulated gate bipolar transistor module lifetime model based on parallel failures of the bonding wire and solder layer has an average error of less than 5 %, reducing the error by 7.74 % compared to the classical lifetime model. Furthermore, it shows a 59.38 % reduction in error compared to the energy-based lifetime model that considers only solder layer failure, significantly improving prediction accuracy. The development of the model and its results provide important reference significance for the reliability assessment of insulated gate bipolar transistor modules.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"175 ","pages":"Article 115923"},"PeriodicalIF":1.9,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145158881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An FPGA-based architecture for time-resolved polarization probing of FeRAM fatigue 基于fpga的FeRAM疲劳时间分辨极化探测结构

IF 1.9 4区工程技术

Microelectronics Reliability Pub Date : 2025-09-24 DOI: 10.1016/j.microrel.2025.115920

Yubin Liao , Zerong He , Xiangyin Chen , Zhongguang Xu

{"title":"An FPGA-based architecture for time-resolved polarization probing of FeRAM fatigue","authors":"Yubin Liao , Zerong He , Xiangyin Chen , Zhongguang Xu","doi":"10.1016/j.microrel.2025.115920","DOIUrl":"10.1016/j.microrel.2025.115920","url":null,"abstract":"<div><div>Traditional approaches to assessing Ferroelectric RAM (FeRAM) reliability rely on direct electrical access to individual capacitors. While effective on isolated test structures, such methods are infeasible for high-density, packaged memory arrays, creating a critical gap between device-level physics and system-level reliability assessment. To bridge this gap, we propose Time-Resolved Polarization Probing (TRPP), a novel indirect methodology that infers the internal polarization state by precisely measuring the minimum switching time accessible at the cell terminals. We implement TRPP on a custom FPGA-based platform that integrates a flexible MBIST engine for controlled fatigue stressing with a carry-chain programmable delay generator offering 53ps resolution. Experimental results on FeRAM devices demonstrate that TRPP effectively quantifies the progressive degradation of polarization kinetics under stress up to <span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>9</mn></mrow></msup></mrow></math></span> cycles. The measurements further reveal disproportionately severe degradation at lower operating voltages, underscoring critical implications for low-power and compute-in-memory applications. Overall, this work establishes TRPP as a high-resolution, scalable methodology for reliability characterization, bridging the gap between device physics and system-level deployment.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"175 ","pages":"Article 115920"},"PeriodicalIF":1.9,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145158882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The dynamic and static radiation damage of silicon carbide MOSFETs with different gate oxide thickness 不同栅氧化层厚度碳化硅mosfet的动态和静态辐射损伤

IF 1.9 4区工程技术

Microelectronics Reliability Pub Date : 2025-09-17 DOI: 10.1016/j.microrel.2025.115918

Dan Zhang , Yudong Li , Haonan Feng , Xiaowen Liang , Chengcheng Shi , Yu Song , Ying Wei , Dong Zhou , Jingyi Xu , Yongheng Luo , Jie Feng , Xuefeng Yu , Qi Guo , Teng Zhang , Bo Wang

{"title":"The dynamic and static radiation damage of silicon carbide MOSFETs with different gate oxide thickness","authors":"Dan Zhang , Yudong Li , Haonan Feng , Xiaowen Liang , Chengcheng Shi , Yu Song , Ying Wei , Dong Zhou , Jingyi Xu , Yongheng Luo , Jie Feng , Xuefeng Yu , Qi Guo , Teng Zhang , Bo Wang","doi":"10.1016/j.microrel.2025.115918","DOIUrl":"10.1016/j.microrel.2025.115918","url":null,"abstract":"<div><div>Radiation effects are a critical issue for SiC MOSFETs in space and nuclear applications. The thickness of the oxide layer is an important factor affecting the radiation resistance of SiC MOSFETs. The thickness of the gate oxide layer will affect the radiation effects of Si MOSFETs, to study the effects of different gate oxide thickness (<em>t</em><sub>ox</sub>) on the total dose radiation damage of SiC MOSFETs, In this paper, we demonstrate the effects of two different <em>t</em><sub>ox</sub> with 50 nm and 70 nm on the dynamic and static characteristics of SiC vertical double-diffused MOS (VDMOS) after gamma irradiation, and the total dose effect radiation damage mechanism is revealed through experiments and simulations, the main reasons for the degradation of static parameters and dynamic characteristics of the devices are identified. The results indicate that gate oxide thickness will also impact the radiation effects of SiC MOSFETs significantly, a thicker gate oxide layer accumulates more captured charge under the total ionizing dose (TID), thus producing a more severe performance degradation. The results can provide a basis for the optimization of the gate oxide thickness and the application of TID radiation-resistant of SiC MOSFETs.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"175 ","pages":"Article 115918"},"PeriodicalIF":1.9,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An informer network-based circuit boards fault detection method using infrared temperature series 基于信息网络的红外温度序列线路板故障检测方法

IF 1.9 4区工程技术

Microelectronics Reliability Pub Date : 2025-09-17 DOI: 10.1016/j.microrel.2025.115890

Shengze Yang , Chenxiao Li , Yangyi Zhu , Hangtian Shen , Liyong Fang

{"title":"An informer network-based circuit boards fault detection method using infrared temperature series","authors":"Shengze Yang , Chenxiao Li , Yangyi Zhu , Hangtian Shen , Liyong Fang","doi":"10.1016/j.microrel.2025.115890","DOIUrl":"10.1016/j.microrel.2025.115890","url":null,"abstract":"<div><div>As industrial demand for circuit board fault detection increases, infrared thermography has become a crucial non-invasive technique for the efficient identification of internal faults. However, existing methods exhibit limitations in feature extraction, local detail capture, and the modeling of correlations between chips and faults. To address these challenges, a comprehensive method that integrates a preprocessing stage and an enhanced Informer-based model, termed Informer-Fault-Net, is proposed. This method begins with preprocessing the long-term time-series heating data of components, which is collected by infrared cameras during power-on cycles. Subsequently, the processed data is fed into the Informer-Fault-Net model to identify faulty components on circuit boards. Within this network, a Statistic-SENet module is designed to pre-condition the input data by leveraging multiple statistical characteristics of component temperatures, and a channel attention mechanism is embedded within this module to strengthen the correlation between different chips and faults, thereby improving detection accuracy and robustness. Simultaneously, a Fully Convolutional Network (FCN) and an improved distillation mechanism are incorporated into the Informer encoder to enhance the model's capacity for local feature extraction and to reduce computational cost. A multi-scale feature fusion strategy is also employed to improve the model's ability to capture features across multiple scales. To validate the effectiveness of the proposed method, we designed and implemented an experimental hardware platform to collect a temperature time-series dataset from the components of circuit boards for fault detection. Finally, a series of experiments showed that the proposed method achieved an accuracy of 0.990.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"175 ","pages":"Article 115890"},"PeriodicalIF":1.9,"publicationDate":"2025-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparative analysis of mechanical and thermal stresses in ITO and AZO thin films on flexible PET substrates for flexible electronic applications 柔性电子用PET基板上ITO和AZO薄膜的机械和热应力比较分析

IF 1.9 4区工程技术

Microelectronics Reliability Pub Date : 2025-09-16 DOI: 10.1016/j.microrel.2025.115921

Mohammad M. Hamasha , Sa'd Hamasha , Khalid Alzoubi , Raghad Massadeh , Khozima Hamasha

{"title":"Comparative analysis of mechanical and thermal stresses in ITO and AZO thin films on flexible PET substrates for flexible electronic applications","authors":"Mohammad M. Hamasha , Sa'd Hamasha , Khalid Alzoubi , Raghad Massadeh , Khozima Hamasha","doi":"10.1016/j.microrel.2025.115921","DOIUrl":"10.1016/j.microrel.2025.115921","url":null,"abstract":"<div><div>This study investigates the mechanical and thermal characteristics of indium tin oxide (ITO) and aluminum-doped zinc oxide (AZO) thin films on flexible polyethylene terephthalate (PET) substrates. The percentage change in electrical resistance (PCER) was investigated through cyclic bending fatigue, thermal cycling, and thermal aging tests to simulate the film's degradation over time under conditions similar to real-life use. Results reveal that AZO films are more prone to crack development and resistance increase under mechanical and thermal stress, especially at elevated temperatures. ITO films proved to be more stable and have smaller PCER values with superior performance under long-term stress. The findings pinpoint ITO's superior mechanical and thermal reliability when compared with AZO and its applicability in long-term flexible electronic devices. This comparative study presents important evidence towards the stability of transparent conductive oxides (TCOs) on flexible substrates and educates the selection of material in stable, resilient, and flexible optoelectronic and photovoltaic devices.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"175 ","pages":"Article 115921"},"PeriodicalIF":1.9,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145107577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Soft fault localization on CMOS differential circuit using dynamic analysis by laser stimulation 基于激光激励动态分析的CMOS差分电路软故障定位

IF 1.9 4区工程技术

Microelectronics Reliability Pub Date : 2025-09-16 DOI: 10.1016/j.microrel.2025.115917

Chi He , Diwei Fan , Kuibo Lan , Sheng Xie

引用次数: 0