Microelectronics Reliability最新文献

The impact of 10 MeV electron irradiation on switching characteristics of SiC MOSFET devices 10 MeV电子辐照对SiC MOSFET器件开关特性的影响

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-19 DOI: 10.1016/j.microrel.2025.115778

Xianghe Fu , Shuwen Guo , Wenbo Peng , Xiaolong Zhao , Quanzhe Zhu , Yongning He

{"title":"The impact of 10 MeV electron irradiation on switching characteristics of SiC MOSFET devices","authors":"Xianghe Fu , Shuwen Guo , Wenbo Peng , Xiaolong Zhao , Quanzhe Zhu , Yongning He","doi":"10.1016/j.microrel.2025.115778","DOIUrl":"10.1016/j.microrel.2025.115778","url":null,"abstract":"<div><div>The rigorous requirements of applications such as deep space exploration, nuclear power plants, and nuclear submarines, pose stringent demands on the radiation resistance of power devices. SiC exhibits excellent radiation resistance compared to Si, while the application of SiC power devices in electron radiation environments still requires further theoretical and experimental refinement. In particular, there is a lack of research on the impact of electron radiation on the switching characteristics of SiC power devices. In this work, we studied the electron radiation effects on the dynamic and static characteristics of SiC VDMOSFET via theoretical modeling, simulation analysis, and 10 MeV irradiation experiments. We further analyzed their radiation damage mechanisms, especially for the damage on the gate structure and drift region. Radiation-induced damage to the gate oxide is the main cause of changes in device characteristics. The experimental results demonstrate a nonlinear correlation between the radiation dose and the threshold voltage of SiC MOSFET devices. With the increase in radiation dose, the switching-on delay time and switching-off voltage/current change rate of the devices decrease, while the switching-off delay time and switching-on voltage/current change rate increase. Consequently, there is a reduction in switching-on losses and an increase in switching-off losses, which affect the thermal generation during the switching process of the device. We also conducted a comparative analysis with Si MOSFET devices. The dynamic and static characteristics of SiC MOSFET devices are found to be less affected by radiation compared to Si MOSFET devices, exhibiting superior radiation resistance.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115778"},"PeriodicalIF":1.6,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144084547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance characterization of lithium-ion battery and aging under constant stress conditions at low temperature 低温恒应力条件下锂离子电池性能表征及老化研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-17 DOI: 10.1016/j.microrel.2025.115785

O. Rafik, A. Capitaine, O. Briat, J.-M. Vinassa

引用次数: 0

Ultra-fast recovery transients in GaN MIS-HEMT submitted to OFF-state stress GaN miss - hemt在off状态应力下的超快速恢复瞬态

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-16 DOI: 10.1016/j.microrel.2025.115790

A. Cavaliere , N. Modolo , C. De Santi , G. Meneghesso , E. Zanoni , M. Meneghini

引用次数: 0

Optimized semi-physical EKV model for simulation of SiC MOSFETs SiC mosfet仿真的优化半物理EKV模型

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-16 DOI: 10.1016/j.microrel.2025.115780

B.D.R. Bonkoungou , R. Gwoziecki , G. Perez , L. Sterna , Z. Khatir

{"title":"Optimized semi-physical EKV model for simulation of SiC MOSFETs","authors":"B.D.R. Bonkoungou , R. Gwoziecki , G. Perez , L. Sterna , Z. Khatir","doi":"10.1016/j.microrel.2025.115780","DOIUrl":"10.1016/j.microrel.2025.115780","url":null,"abstract":"<div><div>This paper presents a detailed static characteristic model based on the EKV (Enz Krummenacher and Vittoz) model for 1200 V SiC MOSFETs in power electronic applications, with a specific focus on <span><math><msub><mi>I</mi><mi>ds</mi></msub><mfenced><msub><mi>V</mi><mi>gs</mi></msub></mfenced></math></span> at different temperatures. The study explores the nuanced behavior parameters in the model and provides a subset of results in this publication. Additionally, the methodology of parameter fitting for the model is elaborated upon, providing insights into the process of refining the model to match real-world behaviors. To validate the steady state characteristics, this paper integrates MOSFET capacitance modeling, internal diode characteristics, and the influence of parasitic elements in the printed circuit board (PCB) for dynamic simulations and comparison with experimental tests conducted. Notably, the model incorporates the physical behavior of the device and can facilitates the integration of drift models for specific parameters, such as threshold voltage <span><math><msub><mi>V</mi><mi>th</mi></msub></math></span>, on state resistance <span><math><msub><mi>R</mi><mrow><mi>ds</mi><mo>,</mo><mi>on</mi></mrow></msub></math></span>. Additionally, with the integration of aging parameters models the current sharing in parallelized devices used in power electronics can be predicted through simulation with the EKV model. This integration can be crucial for establishing models for predictive maintenance of converters equipped with SiC MOSFETs.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115780"},"PeriodicalIF":1.6,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144070124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reliability assessment of SiC power MOSFETs in dynamic reverse bias test SiC功率mosfet在动态反偏试验中的可靠性评估

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-16 DOI: 10.1016/j.microrel.2025.115770

Alessandro Sitta, Giuseppe Mauromicale, Michele Fiore, Michele Calabretta

引用次数: 0

Advanced power cycling test strategies on discrete SiC MOSFETs in different operating modes and the impact on lifetime 不同工作模式下分立SiC mosfet的先进功率循环测试策略及其对寿命的影响

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-15 DOI: 10.1016/j.microrel.2025.115786

L. Hein, P. Heimler, T. Lentzsch, J. Lutz, T. Basler

引用次数: 0

Evaluation with FEM analysis of peak case non-rupture current for power devices working at very high current 大电流下电力设备峰值不破裂电流的有限元分析评价

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-15 DOI: 10.1016/j.microrel.2025.115787

D. Spaggiari , P. Cova , F. Portesine , M. Aschero , N. Delmonte

引用次数: 0

Reliability study of 3D packaged memory under coupled damp and thermal conditions 湿热耦合条件下三维封装存储器可靠性研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-14 DOI: 10.1016/j.microrel.2025.115783

Shuai Zhou , Kaixue Ma , Shoufu Liu , Chi Ma

{"title":"Reliability study of 3D packaged memory under coupled damp and thermal conditions","authors":"Shuai Zhou , Kaixue Ma , Shoufu Liu , Chi Ma","doi":"10.1016/j.microrel.2025.115783","DOIUrl":"10.1016/j.microrel.2025.115783","url":null,"abstract":"<div><div>With the widespread adoption of advanced packaging technologies such as 3D packaging, it has become increasingly important to study the impact of coupled hygrothermal stress on the reliability of microelectronic devices employing these novel packaging techniques. This paper employs finite element simulation and experimental validation, focusing on 3D packaged memory modules, to investigate and analyze the reliability of 3D packaged devices under coupled hygrothermal stress. The research results indicate that the heat dissipation vents of 3D packaged memories serve as the primary entry points for moisture. The areas near these vents are significantly affected by coupled hygrothermal stress. The encapsulant material is prone to failure under the action of coupled hygrothermal stress, while the internal structure remains relatively unaffected. Kirkendall voids appear in some of the solder joints within the internal interconnects of the 3D packaged memories. The continuous exposure to high temperature and high humidity conditions associated with coupled hygrothermal stress accelerates atomic diffusion, leading to the generation of more vacancies that migrate towards the already formed voids, thereby promoting the continuous expansion of these voids.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115783"},"PeriodicalIF":1.6,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143941305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

HTRB effects on threshold instability of 4H-SiC PowerMOSFET with carrots defects HTRB对具有胡萝卜缺陷的4H-SiC功率mosfet阈值不稳定性的影响

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-13 DOI: 10.1016/j.microrel.2025.115781

L. Anoldo , G. Tosto , Z. Dahrouch , S. Bevilacqua , E. Schroer , S. Patanè , A. Russo

引用次数: 0

A review in thermal management for advanced chip packaging from chip to heat sink 先进芯片封装从芯片到散热器的热管理综述

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-12 DOI: 10.1016/j.microrel.2025.115782

Minsoo Kim , Jaehyun Kim , Woosung Park , Joon Sang Kang

{"title":"A review in thermal management for advanced chip packaging from chip to heat sink","authors":"Minsoo Kim , Jaehyun Kim , Woosung Park , Joon Sang Kang","doi":"10.1016/j.microrel.2025.115782","DOIUrl":"10.1016/j.microrel.2025.115782","url":null,"abstract":"<div><div>As the architectural complexity of semiconductor devices increases, energy-efficient thermal management in semiconductor packages has become a significant challenge. The effectiveness of thermal management dictates the performance and reliability of semiconductor packaging, making it a crucial factor in the design of high-performance and high-density systems. This review provides a detailed overview of recent advances in thermal management solutions for semiconductor packages, with a particular focus on heat conduction from the chip to the heat sink. The review first introduces advanced thermal characterization techniques, which are essential for evaluating the passive thermal performance of chip packages. It then explores the use of high thermal conductivity materials in various components, such as thermal interface materials (TIMs), heat spreaders, and package substrates, all of which are critical for improving heat dissipation. Additionally, the review examines design aspects aimed at enhancing heat removal rates, including interface engineering between dissimilar components and the incorporation of thermal vias within a package. The aforementioned approaches can be combined to optimize overall thermal performance in semiconductor packages, requiring careful material selection and appropriate thermal engineering design.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115782"},"PeriodicalIF":1.6,"publicationDate":"2025-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143935967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0