Microelectronics Reliability最新文献_第2页

Enhancing AC degradation modeling by considering the degradation profile in SiON pMOSFETs 通过考虑pmosfet的退化特性来增强交流退化建模

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-09 DOI: 10.1016/j.microrel.2025.115771

Yeohyeok Yun

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Corrosion failure analysis of printed circuit boards exposed to H2S resulting from the decomposition of sargassum algae 马尾藻分解产生的H2S对印刷电路板的腐蚀失效分析

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-08 DOI: 10.1016/j.microrel.2025.115784

Benoit Lescop , Olivia Amintas , Carole Boullanger , Stéphane Rioual

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An analytical model for calculating transient temperatures of 3-D integrated system considering heat capacity variations 考虑热容变化的三维集成系统瞬态温度分析模型

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-07 DOI: 10.1016/j.microrel.2025.115777

Xin Jin, Junqin Zhang, Luhao Zhai, Wenting Chen, Guangbao Shan, Yintang Yang

{"title":"An analytical model for calculating transient temperatures of 3-D integrated system considering heat capacity variations","authors":"Xin Jin, Junqin Zhang, Luhao Zhai, Wenting Chen, Guangbao Shan, Yintang Yang","doi":"10.1016/j.microrel.2025.115777","DOIUrl":"10.1016/j.microrel.2025.115777","url":null,"abstract":"<div><div>Constant pressure heat capacity is an important property that affects thermal diffusivity when calculating the transient temperature of three-dimensional (3-D) integrated systems, but current analytical models usually do not consider the effect of heat capacity. Acknowledging the temperature-dependent nature of heat capacity for materials within the AlN-substrate-based 3-D integrated system, a novel anisotropic transient thermal analytical model that takes into account the heat capacity's temperature-dependent variation is proposed. Initially, the AlN substrate, integrated with a through ceramic via (TCV) array, is modeled as a homogenized structure utilizing the equivalent thermal conductivity (ETC) model. Subsequently, an anisotropic transient thermal analytical model based on Fourier series was established, and the heat capacity values of various materials in the analytical model were updated in real time. The analytical model was compared with the finite element method (FEM), showing a relative error of about 0.73 % in the transient peak temperature predictions, which indicates a high level of agreement with the FEM results. Furthermore, the time required to extract the transient peak temperature within a 10-s simulation using our analytical model was only 0.43 s, which is 885 times faster than the FEM. This demonstrates that the proposed model excels in computational precision and velocity, offering a reliable and efficient strategy for predicting the thermal management needs of 3-D integrated systems.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115777"},"PeriodicalIF":1.6,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143916542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

New methodology for optimal preconditioning of GaN HEMT devices GaN HEMT器件最佳预处理的新方法

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-06 DOI: 10.1016/j.microrel.2025.115776

Maroun Alam , Valeria Rustichelli , Christophe Banc , Jean-François Pieprzyk , Olivier Perrotin , Romain Ceccarelli , David Trémouilles , Mohamed Matmat , Fabio Coccetti

{"title":"New methodology for optimal preconditioning of GaN HEMT devices","authors":"Maroun Alam , Valeria Rustichelli , Christophe Banc , Jean-François Pieprzyk , Olivier Perrotin , Romain Ceccarelli , David Trémouilles , Mohamed Matmat , Fabio Coccetti","doi":"10.1016/j.microrel.2025.115776","DOIUrl":"10.1016/j.microrel.2025.115776","url":null,"abstract":"<div><div>High Electron Mobility Transistors (HEMTs) based on p-type Gallium Nitride (p-GaN) gate have emerged as promising candidates for next-generation high frequency and high-power applications. However, these devices present a threshold-voltage (V<sub>th</sub>) fluctuation impacting their performance and reliability over time. While V<sub>th</sub> fluctuations have been commonly associated with device aging, recent research has uncovered evidence suggesting that certain variations are unrelated to aging effects but rather stem from potentially recoverable trapping phenomena.</div><div>This study has demonstrated that the biases applied to the gate and drain contribute to the observed variations in V<sub>th</sub>. To mitigate these fluctuations, a systematic methodology is proposed for establishing an optimal preconditioning protocol capable of stabilizing the V<sub>th</sub> and ensuring consistent device measurements over different biasing conditions. The optimal electrical preconditioning protocol involves applying a defined voltage to the gate and or to the drain right before V<sub>th</sub> measurement, ensuring an acceptable stability of V<sub>th</sub> measurements. Furthermore, our findings illustrate that the preconditioning protocol is dependent on the technology of the reference.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115776"},"PeriodicalIF":1.6,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143907800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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DC and RF aging test of AlGaN/GaN HEMT technology on SiC substrate SiC衬底上AlGaN/GaN HEMT技术的直流和射频老化试验

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-03 DOI: 10.1016/j.microrel.2025.115772

Thomas Pallaro , Tristan Dubois , Magali De Matos , Christophe Chang , Nathalie Labat , Benoit Lambert , Nathalie Malbert

引用次数: 0

Study of trapping mechanisms affecting AlGaN/GaN HEMTs adopting AlGaN back-barriers with different aluminum concentrations 不同铝浓度的AlGaN背势垒对AlGaN/GaN hemt捕集机理的影响研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-03 DOI: 10.1016/j.microrel.2025.115758

Andrea Carlotto, Fabiana Rampazzo, Marco Saro, Francesco De Pieri, Manuel Fregolent, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni

引用次数: 0

Spacecraft sensor data reliability improvement based on spatio-temporal information fusion model 基于时空信息融合模型的航天器传感器数据可靠性改进

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-02 DOI: 10.1016/j.microrel.2025.115774

Yingqi Wang , Yuchen Song , Runze Yu , Shengwei Meng , Yu Peng , Datong Liu

{"title":"Spacecraft sensor data reliability improvement based on spatio-temporal information fusion model","authors":"Yingqi Wang , Yuchen Song , Runze Yu , Shengwei Meng , Yu Peng , Datong Liu","doi":"10.1016/j.microrel.2025.115774","DOIUrl":"10.1016/j.microrel.2025.115774","url":null,"abstract":"<div><div>Spacecraft sensor data is crucial for evaluating the operating status and environment of spacecraft. However, due to factors such as component aging, space environment interference, and unstable satellite-to-ground communication, obtaining high-reliability sensor data is challenging. Additionally, the high dimensionality, complex correlations, strong temporal dependencies, and noise in sensor data further complicate efforts to improve data reliability. To address these challenges, this paper proposes a sensor reliability improvement method based on a multi-layer spatio-temporal information fusion model (STIFM). First, a moving average filter is applied to the raw data to reduce the impact of noise on modeling. Next, the Transformer model is used to establish data estimation models for different sensors in spatial scale and the same sensor in temporal scale. The outputs from these spatiotemporal models are then fused using particle filtering, and the uncertainty of the results is quantitatively assessed. Based on this, data anomaly detection and recovery are performed using the confidence interval of the STIFM output. Finally, the proposed method is validated using satellite flywheel on-orbit data. Experimental results show that the proposed method achieves at least 93.55 % accuracy in abnormal scenarios and significantly extends the mean time to failures (MTTF), outperforming existing methods. This indicates that the method proposed in this paper can effectively enhance the reliability of spacecraft sensor data.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115774"},"PeriodicalIF":1.6,"publicationDate":"2025-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143895366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design-of-Experiments and ALT plan for reliability qualification of chip resistors based on mission profile of AIMDs 基于空空导弹任务剖面的片式电阻器可靠性鉴定实验设计与ALT方案

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-02 DOI: 10.1016/j.microrel.2025.115773

F.-E. Indmeskine , L. Saintis , A. Kobi , H. Marceau

引用次数: 0

Alumina layers deposited with different precursors for different microelectronic applications 不同前驱体沉积的氧化铝层可用于不同的微电子应用

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-04-30 DOI: 10.1016/j.microrel.2025.115769

Vl. Kolkovsky, R. Stübner

{"title":"Alumina layers deposited with different precursors for different microelectronic applications","authors":"Vl. Kolkovsky, R. Stübner","doi":"10.1016/j.microrel.2025.115769","DOIUrl":"10.1016/j.microrel.2025.115769","url":null,"abstract":"<div><div>Alumina thin films are widely used as barriers in HF etch processes in modern microelectronics. In various microelectronic applications, films deposited on driving electrodes of MEMS devices, such as those made of alumina, might be responsible for various charging effects leading to the degradation of actuator performances. This necessitates high-quality alumina layers with a low density of defects and interface states. In the present study, we compare the electrical properties of alumina layers deposited with different oxidants (ozone and water) using the atomic layer deposition technique. Capacitance-voltage measurements reveal that all as-deposited alumina layers contain negatively charged defects, but their concentration is significantly higher in layers prepared with ozone. The origin of these defects will be discussed. Furthermore, we demonstrate that the density of interface states in layers prepared with ozone is also significantly higher compared to those prepared with water. However, this can be optimized by varying the deposition temperature or the flow of O<sub>3</sub>. Such defects also influence current-voltage characteristics, which are also analysed in this study.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115769"},"PeriodicalIF":1.6,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143887881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Warpage prediction of fan-out wafer-level package based on coupled deep learning and finite element simulation 基于深度学习和有限元模拟的扇形圆片级封装翘曲预测

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-04-28 DOI: 10.1016/j.microrel.2025.115759

Xiaohui Zhao , Hao Zheng , Zhiyan Zhao , Mengxuan Cheng , Wenqian Li , Guoshun Wan , Yuxi Jia

{"title":"Warpage prediction of fan-out wafer-level package based on coupled deep learning and finite element simulation","authors":"Xiaohui Zhao , Hao Zheng , Zhiyan Zhao , Mengxuan Cheng , Wenqian Li , Guoshun Wan , Yuxi Jia","doi":"10.1016/j.microrel.2025.115759","DOIUrl":"10.1016/j.microrel.2025.115759","url":null,"abstract":"<div><div>In recent years, fan-out wafer-level package (FOWLP) has gained widespread attention in integrated circuit industry due to its significant potential in enhancing packaging performance, reducing costs and minimizing size. However, accurate prediction of warpage in FOWLP remains a formidable challenge, as conventional prediction methods often suffer from prolonged iterative cycles and high computational costs. This study integrates the finite element method (FEM) with artificial intelligence (AI) techniques to develop highly accurate and efficient warpage prediction model for FOWLP based on varying chip sizes and spacings. Automated modeling and data generation were performed using simulation technique and python scripts, resulting in the creation of two datasets of different scales for regression training and optimization. Prediction results indicate that Residual Network-152 (ResNet-152) performs best on smaller datasets, while Global Context Vision Transformer-Tiny (GCViT-Tiny) exhibits greater stability on larger datasets. The Huber loss function was employed to optimize the deep learning (DL) model weights through backpropagation, significantly improving both training efficiency and prediction accuracy. Additionally, the reliability and practicality of the DL model were validated by performing simulations and AI predictions on structures not included in the dataset. Finally, the trained DL model provided brief technical guidance for optimizing warpage in wafers for the integrated circuit industry. In terms of efficiency, DL models offer a clear advantage in industrial applications. The research results provide effective theoretical support and practical guidance for FOWLP optimum design and reliability assessment, demonstrating significant application potential.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"170 ","pages":"Article 115759"},"PeriodicalIF":1.6,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143878531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0