Microelectronics Reliability最新文献_第2页

Influence of different vibration directions on the solder layer fatigue in IGBT modules 不同振动方向对 IGBT 模块焊接层疲劳的影响

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2024-10-22 DOI: 10.1016/j.microrel.2024.115526

{"title":"Influence of different vibration directions on the solder layer fatigue in IGBT modules","authors":"","doi":"10.1016/j.microrel.2024.115526","DOIUrl":"10.1016/j.microrel.2024.115526","url":null,"abstract":"<div><div>Insulated-gate bipolar transistor (IGBT) modules are extensively utilized in high-speed trains, ships, and electric vehicles. Compared to those used in power systems, IGBT modules in these applications are more susceptible to vibration effects on their reliability. This paper proposes a multi-physics field simulation method and a lifetime model for IGBT modules to assess the impact of different vibration directions on solder layer fatigue. Initially, a multi-physics field model of the IGBT module is developed, incorporating electrical, thermal, mechanical, and vibration coupling. The effectiveness of this multi-physics simulation model is verified by an experimental platform. Subsequently, the influence of different vibration directions on solder layer fatigue in the IGBT module is analysed, and a life model of the IGBT is proposed through simulation. Finally, a power cycling with a vibration environment experimental platform is established to validate the effect of vibration on solder layer fatigue in the IGBT module. The simulation and experimental results indicate that vertical vibration accelerates the solder layer fatigue of IGBT modules, and the lifetime of an IGBT module operating under vertical vibration at 30 Hz is about 15 % shorter than that of an IGBT module operating under power cycling alone. The error between the calculated results of the solder layer failure and the experimental result is <5 %.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A SEGR hardened trench gate DMOS with stepped source and optimized LOCOS structure 具有阶跃源极和优化 LOCOS 结构的 SEGR 加硬沟道栅 DMOS

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2024-10-21 DOI: 10.1016/j.microrel.2024.115525

引用次数: 0

Study of the characteristics and growth of tin whiskers in orbit 研究轨道上锡须的特性和生长情况

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2024-10-21 DOI: 10.1016/j.microrel.2024.115523

{"title":"Study of the characteristics and growth of tin whiskers in orbit","authors":"","doi":"10.1016/j.microrel.2024.115523","DOIUrl":"10.1016/j.microrel.2024.115523","url":null,"abstract":"<div><div>To confirm the applicability of tin-based lead-free parts in satellites, we validated the growth characteristics of tin whiskers in orbit. The result was that the tin whiskers generated on the in-orbit samples grew thin, long, and straight. The longest tin whisker observed in the in-orbit samples was approximately 767 μm. There were fine striation rings on the side face of the tin whisker in the in-orbit samples. This characteristic is the tin whiskers generated by thermal cycling. In addition, the growth characteristics of tin whiskers in orbit and on the ground in air differed. However, tin whiskers in orbit and on the ground in a vacuum exhibited the same growth characteristics. These results indicate that thermal cycling and vacuum (i.e., no oxygen) significantly influence the growth and shape of tin whiskers in orbit. Cross-sectional scanning electron microscope showed that on the in-orbit samples, the tin plating grains were neatly arranged, and no deep grooves along the tin plating grain boundaries were identified; whereas, on the ground in air, the tin plating grain boundaries were cracked, and the interfaces with adjacent grains were separated. Therefore, tin atoms diffused more easily in orbit because of the fine alignment of the tin plating grains; many very long tin whiskers were generated in orbit.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel methodology for vibration induced fatigue life assessment of BGA devices in avionics systems of satellite launch vehicles 卫星运载火箭航空电子系统中 BGA 器件的振动诱发疲劳寿命评估新方法

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2024-10-19 DOI: 10.1016/j.microrel.2024.115524

{"title":"A novel methodology for vibration induced fatigue life assessment of BGA devices in avionics systems of satellite launch vehicles","authors":"","doi":"10.1016/j.microrel.2024.115524","DOIUrl":"10.1016/j.microrel.2024.115524","url":null,"abstract":"<div><div>A new PCB strain-based methodology for BGA fatigue damage assessment, during system level vibration analysis, is established. The Stress-Life curve for solder joints (Sn37Pb), extracted by FE modelling from peer-reviewed data, is utilized as the damage thresholds instead of traditionally used empirical criteria. To eliminate the modelling effort and resource intensive computations associated with solder joint stress calculations, a correlation between the PCB strain and device solder joint stress is established. Harmonic vibration analysis of PCBs with 3 different sizes, 2 boundary conditions, and different device locations are utilized for this purpose. A novel device and PCB model simplification technique, which does not affect PCB strain results, is also proposed. The methodology is demonstrated for fatigue life assessment of BGA device in a launch vehicle avionics package, under random vibration environment. Subsequently, design improvement to meet the fatigue life requirement is also suggested. Fatigue life is calculated using three different stress cycles estimation models namely Dirlik, Single Moment, and Steinberg's 3-band method, and Single Moment method is found to be most appropriate.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142535369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Aging resilient ring oscillators for reliable Physically Unclonable Functions (PUFs) 用于可靠的物理不可克隆函数（PUF）的抗老化环形振荡器

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2024-10-15 DOI: 10.1016/j.microrel.2024.115520

{"title":"Aging resilient ring oscillators for reliable Physically Unclonable Functions (PUFs)","authors":"","doi":"10.1016/j.microrel.2024.115520","DOIUrl":"10.1016/j.microrel.2024.115520","url":null,"abstract":"<div><div>Physically Unclonable Functions (PUFs) are a promising low-cost solution for authentication and key generation in cryptosystems. However, it has been shown in the literature that, due to aging mechanisms such as Bias Temperature Instability (BTI), PUFs may no longer be able to generate correct outputs after a certain lifetime, thus becoming unreliable. In order to mitigate this problem, we present a novel ring oscillator (RO) based PUF design that is highly robust against BTI degradation. It will be hereinafter referred to as Highly BTI Resilient RO – HBTIRRO. In particular, we present two possible implementations for our HBTIRRO, each one corresponding to a different tradeoff among robustness against BTI, power consumption and area occupation. We compare the effectiveness and costs of the two proposed HBTIRRO implementations to those of a standard RO, and of the most recent alternative solution presented in the literature. We show that, one of our HBTIRRO implementation features the highest robustness against BTI, enabling a reduction in frequency degradation of 57.2 % and 34.6 % with respect to the standard RO and the recent alternate solution, respectively, while requiring a similar area and some increase in power consumption. The other implementation of our HBTIRRO features a very low cost in terms of area occupation, while featuring a robustness against BTI that is comparable to the most recent alternative solution presented in the literature. Moreover, we show that, compared to both the considered alternative solutions, our two HBTIRRO implementations present similar or higher (i.e., better) values in the three classical PUF figures of merit (namely, uniqueness, reliability and randomness), and the highest standard deviation in the statistical distribution of the oscillation frequency resulting from process variation. Therefore, our two proposed HBTIRRO offer also a more secure implementation for RO-based PUF than the compared solutions.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Soft error analysis on junctionless ringFET structures and junctionless ringFET-based inverter circuits using numerical device modeling 利用数值器件建模对无结环形场效应晶体管结构和基于无结环形场效应晶体管的逆变器电路进行软误差分析

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2024-10-14 DOI: 10.1016/j.microrel.2024.115521

引用次数: 0

Non-destructive fault diagnosis of electronic interconnects by learning signal patterns of reflection coefficient in the frequency domain 通过学习频域反射系数信号模式对电子互连器件进行非破坏性故障诊断

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2024-10-14 DOI: 10.1016/j.microrel.2024.115518

{"title":"Non-destructive fault diagnosis of electronic interconnects by learning signal patterns of reflection coefficient in the frequency domain","authors":"","doi":"10.1016/j.microrel.2024.115518","DOIUrl":"10.1016/j.microrel.2024.115518","url":null,"abstract":"<div><div>Fault detection and diagnosis of the interconnects are crucial for prognostics and health management (PHM) of electronics. Traditional methods, which rely on electronic signals as prognostic factors, often struggle to accurately identify the root causes of defects without resorting to destructive testing. Furthermore, these methods are vulnerable to noise interference, which can result in false alarms. To address these limitations, in this paper, we propose a novel, non-destructive approach for early fault detection and accurate diagnosis of interconnect defects, with improved noise resilience. Our approach uniquely utilizes the signal patterns of the reflection coefficient across a range of frequencies, enabling both root cause identification and severity assessment. This approach departs from conventional time-series analysis and effectively transforms the signal data into a format suitable for advanced learning algorithms. Additionally, we introduce a novel severity rating ensemble learning (SREL) approach, which enhances diagnostic accuracy and robustness in noisy environments. Experimental results demonstrate that the proposed method is effective for fault detection and diagnosis and has the potential to extend to real-world industrial applications.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142434071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles study of Ni additions on mechanical properties of η'-Cu6Sn5-based intermetallic compound 添加镍对η'-Cu6Sn5 金属间化合物力学性能的第一性原理研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2024-10-08 DOI: 10.1016/j.microrel.2024.115514

{"title":"First-principles study of Ni additions on mechanical properties of η'-Cu6Sn5-based intermetallic compound","authors":"","doi":"10.1016/j.microrel.2024.115514","DOIUrl":"10.1016/j.microrel.2024.115514","url":null,"abstract":"<div><div>Amorphous Ni<img>P layers have been employed as barrier layers to regulate the formation and growth of intermetallic compounds (IMCs) within industrial contexts. The doping of Ni atoms into the crystal structure of η'-Cu<sub>6</sub>Sn<sub>5</sub> resulted in the formation of the IMC of η'- (Cu,Ni)<sub>6</sub>Sn<sub>5</sub>. An examination of the mechanical properties of IMCs is crucial for the evaluation of solder joint longevity. Based on first-principles calculations and VRH methods, the bulk modulus, shear modulus and the elastic modulus and hardness values of η'-Cu<sub>6</sub>Sn<sub>5</sub>, η'-Cu<sub>5.75</sub>Ni<sub>0.25</sub>Sn<sub>5</sub>, η'-Cu<sub>5.5</sub>Ni<sub>0.5</sub>Sn<sub>5</sub> and η'-Cu<sub>5.25</sub>Ni<sub>0.75</sub>Sn<sub>5</sub> IMCs were analyzed, which showed that η'- (Cu,Ni)<sub>6</sub>Sn<sub>5</sub> possessed a stronger anisotropy and hardness. The <em>K</em><sub><em>IC</em></sub> of all η'-Cu<sub>6</sub>Sn<sub>5</sub>-based IMCs are 1.830, 1.933, 1.961, and 1.960, respectively, indicating that the doping of Ni atoms into the η'-Cu<sub>6</sub>Sn<sub>5</sub> cells can favourably affect their mechanical properties reducing the likelihood of microcracking at the interface during use and increasing the shear resistance of the joint. The thermodynamic disorder parameter (TDOS) for all η'-Cu<sub>6</sub>Sn<sub>5</sub>-based IMCs is primarily influenced by the Sn-s and Cu-d states, which exhibit metallic properties. It has been demonstrated that the compound η'- (Cu,Ni)<sub>6</sub>Sn<sub>5</sub> is more stable than the compound η'-Cu<sub>6</sub>Sn<sub>5</sub>. This phenomenon can be attributed to the formation of robust covalent bonds between the Ni atoms and their neighbouring Cu and Sn atoms, which occurs when Ni atoms are doped. The findings of this research can serve as a valuable reference point and theoretical foundation for future applications of Ni<img>P barrier layers in soldering.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142421875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel multi-information fusion CNN for defect detection in laser soldering of SAC305 用于 SAC305 激光焊接缺陷检测的新型多信息融合 CNN

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2024-10-08 DOI: 10.1016/j.microrel.2024.115519

{"title":"A novel multi-information fusion CNN for defect detection in laser soldering of SAC305","authors":"","doi":"10.1016/j.microrel.2024.115519","DOIUrl":"10.1016/j.microrel.2024.115519","url":null,"abstract":"<div><div>Identification of laser soldering of lead-free solder Sn-3.0Ag-0.5Cu (SAC305) in electronic packaging was still an enormous challenge. It was difficult to detect defects in large-scale production. This work proposed an identification model based on multi-information fusion convolutional neural network (MIFCNN) for inspecting laser soldering process. In this method, the forty images in chronological order and the temperature data were combined as the input to be utilized in detecting defects. The results demonstrated that MIFCNN had best accuracy for three types of joints with accuracy of 98.28 % due to the combination of images and temperature information. The ICNN and TCNN had poor recognition accuracy for the warpage defect with 73.9 % and the poor wetting defect with 66.5 %, respectively. This was because the images and temperature information were the key to identifying the poor wetting defects and warpage defects, respectively. The poor wetting defect could be recognized by difference of contact angle, while the warpage defect could be significantly detected by maximum temperature. This work could help detecting defects of laser soldering in the actual production and widen the application of MIFCNN in the field of laser soldering.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142422028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Research of SEB effects in trench IGBT based on the TCAD simulation 基于 TCAD 仿真的沟槽式 IGBT SEB 效应研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2024-10-07 DOI: 10.1016/j.microrel.2024.115517

{"title":"Research of SEB effects in trench IGBT based on the TCAD simulation","authors":"","doi":"10.1016/j.microrel.2024.115517","DOIUrl":"10.1016/j.microrel.2024.115517","url":null,"abstract":"<div><div>In this paper, based on TCAD simulation, a detailed investigation of the SEB failure mechanism of trench IGBTs featuring a deep trench with slanted side-walls structure is conducted for the first time by studying the temporal evolution of electrostatic potential, impact ionization, electric field, current density, and hole concentration distributions. The study reveals that heavy ion irradiation can induce the turning-on of inherent parasitic transistors, leading to the formation of latch-up and consequently SEB. Firstly, the peak electric field transfer leads to high-level impact ionization at the homojunction, injecting ionized electrons into the base-neutral region to turn on the parasitic PNP transistor. Secondly, ionized holes flow through the P-well towards the emitter, diminishing the potential barrier between the P-well and the N+ source region, thus activating the parasitic NPN transistor. Finally, with the parasitic NPN transistor remaining forward-biased, it continuously supplies electron current to the parasitic PNP transistor, thereby sustaining its operation. In summary, the conclusions obtained from the study can provide important references for a deeper understanding of the failure mechanisms of trench IGBT devices in harsh radiation environments.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142422027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0