Microelectronics Reliability最新文献

{"title":"Effect of Co on microstructure evolution and thermal fatigue stability of lead-free solder alloys of SACBSN series","authors":"Zhendong Wang ,&nbsp;Jiaojiao Yang ,&nbsp;Jikang Yan ,&nbsp;Biao Wang ,&nbsp;Chongyan Leng ,&nbsp;Linyan Zhao","doi":"10.1016/j.microrel.2024.115395","DOIUrl":"https://doi.org/10.1016/j.microrel.2024.115395","url":null,"abstract":"<div><p>The majority of studies on high-reliability solder alloys have focused on the six-element system of Sn, Ag, Cu, Bi, Sb, and Ni. However, there is limited research on the influence of Co element within this system. In this study, a Sn<img>3.0Ag<img>0.5Cu<img>Bi<img>Sb<img>Ni<img>xCo (x = 0 wt%, 0.02 wt%, 0.05 wt%, 0.08 wt%, 0.1 wt%) alloy (referred to as SACBSN-xCo alloy) was prepared using a melting method. The mechanical properties of SACBSN-xCo alloy solder joints were evaluated through ultimate shear strength testing. The composition analysis of the alloy, phase composition examination, intermetallic compound (IMC) investigation and interfacial layer morphology analysis were conducted using ICP, XRD, SEM and EDS techniques respectively. Furthermore, the evolution process of solder structure and solder joint interface layer under different aging times was observed in detail. Results indicate that with the addition of Co element in the alloy solder system two heat release peaks appear during the solidification process; specifically when adding 0.05 wt% Co element content to the mixture it reduces supercooling degree by 15.17 °C to only 1.03 °C; Moreover wettability improvement can be achieved to some extent when adding either 0.02 wt% or 0.05 wt% Co content. The addition of trace Co can inhibit the excessive growth of IMC in the solder alloy matrix and refine the alloy structure. It can promote the growth of Cu₆Sn₅-based IMCs and inhibit the growth of Cu₃Sn layer in intermetallic compound layer (IMCs). In addition, the mechanical properties and thermal fatigue stability of the solder joints are steadily improved by Co element. After adding Co element, the shear strength of the alloy solder joint is increased by about 14.84 %. After aging at 150 °C for 25 days, the shear strength of SACBSN-xCo alloy solder joints is increased by about 20.4 %, which significantly improves the thermal fatigue stability of the solder joints after high temperature aging treatment. The results show that when Co content is 0.05 wt%, the alloy solder has better comprehensive properties.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140645204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of eutectic gallium-indium-based transparent conductive electrodes on flexible substrates for touch sensor integration","authors":"Hongseok Kim ,&nbsp;Youngjun Song ,&nbsp;Sung-pil Chang","doi":"10.1016/j.microrel.2024.115402","DOIUrl":"https://doi.org/10.1016/j.microrel.2024.115402","url":null,"abstract":"<div><p>In this study, the adaptability of liquid metal (LM)-based transparent conductive electrodes (TCEs) to flexible substrates and their potential applications in various electronics fields were investigated. To achieve this, conventional microfabrication techniques were employed to pattern polydimethylsiloxane (PDMS) channels and introduce an Eutectic Gallium-Indium (EGaIn) LM with the aim of enhancing transmittance and reducing sheet resistance. Microfluidic channel structures with varying pitch lengths and widths were fabricated in the types of grid patterns, labeled Pattern A (2000 μm pitch, 40 μm width), Pattern B (2000 μm pitch, 80 μm width), Pattern C (200 μm pitch, 40 μm width), and Pattern D (200 μm pitch, 80 μm width. The corresponding average transmittance values for the EGaIn LM-based TCE were 90 %, 71.8 %, 61.8 %, and 43.2 % for Patterns A, B, C, and D, respectively. To illustrate the potential in touch sensor applications, resistance changes in Patterns A, B, C, and D were assessed under applied forces ranging from 0 N to 150 N, revealing resistance changes of 0.0265 Ω, 0.03617 Ω, 0.03977 Ω, and 0.11629 Ω, respectively.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140631857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical and simulation-based assessment of electrically doped junctionless TFET with metal-strip and hetero-material considering interface trap charges","authors":"Bandi Venkata Chandan,&nbsp;Kaushal Kumar Nigam","doi":"10.1016/j.microrel.2024.115393","DOIUrl":"https://doi.org/10.1016/j.microrel.2024.115393","url":null,"abstract":"<div><p>The fabrication complexity, ambipolar current conduction (<span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>a</mi><mi>m</mi><mi>b</mi><mi>i</mi></mrow></msub></math></span>), inferior ON-state current (<span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>o</mi><mi>n</mi></mrow></msub></math></span>), and poor analog/RF performance are major limitations of conventional tunnel field-effect transistors (TFETs). To address these challenges, we propose a novel approach utilizing hetero-material (HM) and metal-strip (MS) technology to develop an electrically doped junctionless TFET (HM-MS-ED-JL-TFET). Utilizing work function engineering (4.72 eV) at the control gate (CG) establishes an intrinsic region along the channel, while a combination of work function engineering (4.72 eV) and a polarity bias (electrically doped) of PG = -1.2 V at the polarity gate (PG) induces a <span><math><msup><mrow><mi>P</mi></mrow><mrow><mo>+</mo></mrow></msup></math></span> region across the source, forming an <span><math><msup><mrow><mi>N</mi></mrow><mrow><mo>+</mo></mrow></msup></math></span>-i-<span><math><msup><mrow><mi>P</mi></mrow><mrow><mo>+</mo></mrow></msup></math></span> structure over the thin <span><math><msup><mrow><mi>N</mi></mrow><mrow><mo>+</mo></mrow></msup></math></span>-<span><math><msup><mrow><mi>N</mi></mrow><mrow><mo>+</mo></mrow></msup></math></span>-<span><math><msup><mrow><mi>N</mi></mrow><mrow><mo>+</mo></mrow></msup></math></span> silicon body. This approach effectively mitigates concerns regarding random dopant fluctuations (RDF) without necessitating a thermal budget, streamlining fabrication compared to conventional TFETs. Furthermore, the integration of hetero-material into the source region narrows the tunneling barrier width, enhancing band-to-band tunneling at the source-channel interface and improving critical metrics such as ON-state current (<span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>o</mi><mi>n</mi></mrow></msub></math></span>), subthreshold slope (SS), transconductance (<span><math><msub><mrow><mi>g</mi></mrow><mrow><mi>m</mi></mrow></msub></math></span>), and cut-off frequency (<span><math><msub><mrow><mi>f</mi></mrow><mrow><mi>T</mi></mrow></msub></math></span>). Concurrently, the inclusion of a metal strip at the drain-channel region raises the energy band and suppresses the ambipolar current. To optimize device performance, a comprehensive optimization phase involving material selection, length, and work function tuning of the metal strip is incorporated. Additionally, reliability concerns arising from interface trap charges (ITCs) at the oxide-semiconductor interface during fabrication are investigated. Through extensive simulations utilizing the Silvaco ATLAS device simulator, we demonstrate the enhanced immunity of the HM-MS-ED-JLTFET to various ITCs, rendering it more reliable for ultra-low-power and high-frequency applications compared to conventional counterparts like ED-JLTFET and MS-ED-JLTFET.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140631273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Application of 2D Walsh-Hadamard transform in SRAM upset bitmaps processing","authors":"A.S. Pilipenko ,&nbsp;L.S. Zubkov ,&nbsp;M.I. Tikhonov","doi":"10.1016/j.microrel.2024.115398","DOIUrl":"https://doi.org/10.1016/j.microrel.2024.115398","url":null,"abstract":"<div><p>Upset bitmaps distribution features in SRAM arrays exposed by various types of pulsed ionizing radiation (X-rays, n-γ, laser-accelerated protons) were analyzed by experimental data processing with 2D Walsh-Hadamard transform, i.e. expansion of orthogonal rectangle functions on closed set basis. Using such processing with comparison to expansion on 1D Fourier or Walsh-Hadamard transform allows one to detect additional regularities in upset distribution. The presence of these regularities can be explained by voltage dropdown across integrated circuit voltage supply buses arising under pulsed radiation exposure as a result of dose rate effects. The “stripe-like” upset bitmap is explicitly observed under the pulsed X-ray exposure. In the case of pulsed complex n-γ (fission neutrons) and laser-accelerated protons exposure the dose rate effects significance and therefore the presence of any regularities in upset bitmaps are strongly device-specific. A quantitative criterion was introduced on basis of 2D Walsh-Hadamard amplitude spectra's statistical examination permitting to pick out upset bitmaps with regularities even for visually uniform upset bitmaps.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140631856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative study: AutoDPR-SEM for enhancing CNN reliability in SRAM-based FPGAs through autonomous reconfiguration","authors":"Haonan Tian ,&nbsp;Younis Ibrahim ,&nbsp;Rui Chen ,&nbsp;Yixiu Wang ,&nbsp;Chen Jin ,&nbsp;George Belev ,&nbsp;Li Chen","doi":"10.1016/j.microrel.2024.115392","DOIUrl":"https://doi.org/10.1016/j.microrel.2024.115392","url":null,"abstract":"<div><p>Convolutional neural networks (CNNs) are widely adopted in safety-critical systems, including space applications and autonomous vehicles. Field-programmable gate arrays (FPGAs) based on SRAM are preferred for accelerating CNN computations due to their unique characteristics. However, the configuration memory of FPGAs is susceptible to single event effects (SEEs), which can corrupt computations and lead to misclassification of CNN outputs. In this study, we investigated the impact of SEEs on SRAM-based FPGAs with Two-Photon Absorption (TPA) laser fault injections through a comparative analysis of two popular CNN acceleration architectures: streaming architecture (SA) and single compute engine (SCE). Experimental results show that SA-based CNNs require more hardware resources but exhibit superior resilience against single event upsets (SEUs). Without any Radiation Hardened by Design (RHBD) protection, SCE has an error rate approximately twice as high as SA. To mitigate errors, the Xilinx IP core - Soft Error Mitigation (SEM) is used for error detection and correction, leading to error rate reductions of up to 50 % in both architectures. Importantly, we propose the AutoDPR-SEM (Autonomous Dynamic Partial Reconfiguration for Soft Error Mitigation) approach, which automatically reconfigures the SEM IP core when it remains idle due to uncorrectable errors. AutoDPR-SEM significantly improves CNN error rates, reducing errors by approximately 17.8 times in SCE and 14.8 times in SA. We also applied software level simulation to validate the TPA experiment, showing similar trends of the testing results across all models. In conclusion, the study confirms the feasibility of AutoDPR-SEM in both architectures, showcasing its potential to improve CNN error rates in safety-critical systems.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140631398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A survey on LED Prognostics and Health Management and uncertainty reduction","authors":"Roberto Rocchetta ,&nbsp;Elisa Perrone ,&nbsp;Alexander Herzog ,&nbsp;Pierre Dersin ,&nbsp;Alessandro Di Bucchianico","doi":"10.1016/j.microrel.2024.115399","DOIUrl":"https://doi.org/10.1016/j.microrel.2024.115399","url":null,"abstract":"<div><p>Hybrid Prognostics and Health Management (PHM) frameworks for light-emitting diodes (LEDs) seek accurate remaining useful life (RUL) predictions by merging information from physics-of-failure laws with data-driven models and tools for online monitoring and data collection. Uncertainty quantification (UQ) and uncertainty reduction are essential to achieve accurate predictions and assess the effect of heterogeneous operational-environmental conditions, lack of data, and noises on LED durability. Aleatory uncertainty is considered in hybrid frameworks, and probabilistic models and predictions are applied to account for inherent variability and randomness in the LED lifetime. On the other hand, hybrid frameworks often neglect epistemic uncertainty, lacking formal characterization and reduction methods. In this survey, we propose an overview of accelerated data collection methods and modeling options for LEDs. In contrast to other works, this review focuses on uncertainty quantification and the fusion of hybrid PHM models with optimal design of experiment methods for epistemic uncertainty reduction. In particular, optimizing the data collection with a combination of statistical optimality criteria and accelerated degradation test schemes can substantially reduce the epistemic uncertainty and enhance the performance of hybrid prognostic models.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0026271424000799/pdfft?md5=c4098effdd52db5b1e66e31d5f01407b&pid=1-s2.0-S0026271424000799-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140621051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Utilizing CNN to predict homogeneous thermo-mechanical properties of conductive layers for reliability numerical analysis in electronics","authors":"Guoshun Wan ,&nbsp;Qi Dong ,&nbsp;Xiaochen Sun ,&nbsp;Hao Zheng ,&nbsp;Mengxuan Cheng ,&nbsp;Wen Qiao ,&nbsp;Yuxi Jia","doi":"10.1016/j.microrel.2024.115400","DOIUrl":"https://doi.org/10.1016/j.microrel.2024.115400","url":null,"abstract":"<div><p>This study explores the application of Convolutional Neural Networks (CNN) in predicting the partitioned homogeneous properties (PHPs) of electronic product wiring structures, aiming to enhance the efficiency of reliability analysis through Finite Element Analysis (FEA). A systematic and novel method was developed to generate the input partitioned wiring diagram image sets that foster model generalization and universality. The performance of the CNN-based approach was assessed through regression analysis by employing a leave-one-out cross-validation (LOOCV) approach across three PCBs. Additionally, the predicted PHPs of one of the PCBs were applied in product-level FEA to validate their reliability, further demonstrating the practical applicability of the CNN-based method. The results demonstrate that a well-trained CNN model can accurately predict the properties of previously unencountered wiring structures, thereby facilitating direct application in product-level reliability FEA and improving the efficiency of reliability assessment. Furthermore, efficiency evaluation revealed that the CNN-based method offers significant advantages in terms of time and cost economy compared to the mesoscopic FEA method in determining, highlighting its potential for broader application in electronic product reliability analysis. The findings provide preliminary insights and propose strategies to enhance the applicability of CNN methods in this domain, ultimately aiming to improve the efficiency and reduce costs in reliability assessments, thereby streamlining the overall product development process.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140619091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Failure analysis of heavy ion-irradiated silicon carbide junction barrier Schottky diodes","authors":"Shuang Cao,&nbsp;Qingkui Yu,&nbsp;Qianyuan Wang,&nbsp;He Wang,&nbsp;Yi Sun,&nbsp;He Lv,&nbsp;Bo Mei,&nbsp;Rigen Mo,&nbsp;Pengwei Li,&nbsp;Hongwei Zhang","doi":"10.1016/j.microrel.2024.115401","DOIUrl":"https://doi.org/10.1016/j.microrel.2024.115401","url":null,"abstract":"<div><p>An analysis of damage, including single event burnout (SEB) and single event leakage current (SELC) caused by heavy ion irradiation in silicon carbide (SiC) junction barrier Schottky diodes (JBSDs), was performed using Auger electron spectroscopy (AES), emission microscope (EMMI), focused ion beam (FIB), transmission electron microscopy (TEM) and other methods. The damage of SEB extending from the Schottky contact through the epitaxial layer to the SiC substrate was observed. The damage causing SELC was related to the micro-burnout of the Schottky contact. It was concluded that the damage of Schottky contact was induced by incident high-energy particles under a large electric field, forming a leakage current path, resulting in SEB and SELC in the SiC device.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140619092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improvement of VRT immunity using low 10-boron word line in recent DRAM","authors":"Dongkyu Jang ,&nbsp;Daekyum Kim ,&nbsp;Jieun Lee ,&nbsp;Inkyum Lee ,&nbsp;Sang Bin Ahn ,&nbsp;Yoonki Hong ,&nbsp;Shindeuk Kim ,&nbsp;Taehoon Park ,&nbsp;Hyodong Ban","doi":"10.1016/j.microrel.2024.115396","DOIUrl":"https://doi.org/10.1016/j.microrel.2024.115396","url":null,"abstract":"<div><p>This paper investigated the variable retention time (VRT) problems in DRAM owing to 10-Boron (¹⁰B) in dynamic random access memory (DRAM). Recently, since the random telegraph noise (RTN) increased due to the shrink of DRAM, it is very difficult to secure the robust VRT properties. The main types of VRT problems are single-bit (SB) failures which are caused by ¹⁰B in DRAM cell, so it is important to develop a proper technology to reduce ¹⁰B. In particular, a large amount of ¹⁰B flows into DRAM cell from Diborane (B₂H₆) used as a precursor for the word line (WL) formation in sub-20 nm DRAMs. In this paper, we present and discuss the effect of ¹⁰B on the cell transistors (Cell Tr) from a process perspective. In addition, we propose the appropriate reduction of ¹⁰B in WL with improved VRT properties.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140619090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of proton irradiation damage on SnAg/Cu microbump simulation using Monte Carlo method","authors":"Xinyi Jing ,&nbsp;Keyu Luo ,&nbsp;Kyung-Wook Paik ,&nbsp;Peng He ,&nbsp;Shuye Zhang","doi":"10.1016/j.microrel.2024.115391","DOIUrl":"https://doi.org/10.1016/j.microrel.2024.115391","url":null,"abstract":"<div><p>The requirements for small size and high performance of electronic devices in space applications have made microbump technology a popular topic in current research. Based on the Monte Carlo method, using the SRIM program to simulate the irradiation effects on microbumps can effectively shorten the test period and avoid the chance problem of the actual test. Therefore, in this study, the SRIM program was used to simulate the atomic distribution and energy loss inside the microbump for different incident ions, incident energy, and incident angles. The results show that at the same incident energy and incident angle, ions with larger relative atomic mass are incident closer and cause more damage to the microbump. Meanwhile, in a certain range, the increase of incident energy significantly increases the damage inside the microbumps, but when the incident energy reaches a certain value, the damage instead appears to decrease to a certain extent due to the existence of Bragg's law. In addition, the incident distance and the range of energy release decrease with the increase of the incident angle.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140548619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}