Microelectronics Reliability最新文献_第10页

Development challenges of a one-sided GaN-based high-current density buck converter through multiphysics optimization for electric vehicle applications 基于单侧氮化镓的高电流密度降压变换器的多物理场优化研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-27 DOI: 10.1016/j.microrel.2025.115792

M. Belguith , S. Eloued , M. Kadi , J. Ben Hadj Slama

{"title":"Development challenges of a one-sided GaN-based high-current density buck converter through multiphysics optimization for electric vehicle applications","authors":"M. Belguith , S. Eloued , M. Kadi , J. Ben Hadj Slama","doi":"10.1016/j.microrel.2025.115792","DOIUrl":"10.1016/j.microrel.2025.115792","url":null,"abstract":"<div><div>GaN's advantages over conventional semiconductors make it an excellent candidate for deployment in the transportation area. This work aims to develop a simple, one-sided DC/DC GaN-based buck converter for manufacturing and prove its feasibility through multiphysics optimization of the chosen topology. To enhance the design, the Ansys “Q3D tool” is employed to estimate parasitic elements, which are subsequently incorporated into an electrical model in the waveform viewer software “LTspice” to evaluate their impact on the switching node signal “Vsw” of the half bridge structure. Next, we will examine the overshoots and ringings by comparing the measured and simulated converter's Vsw and the output signals. We have implemented robust thermal management in this work. Additionally, this study provides an analysis of current density in the layout and heat distribution in the converter circuit. We will present more precise measurement results that align with the simulation in the primary outcomes, showcasing the effectiveness of the converter layout optimization topology.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":""},"PeriodicalIF":1.6,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144138086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Research on the relative independence of failure mechanisms for mitigating passing word line induced row hammering 减轻通行字线诱导行锤击失效机制的相对独立性研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-27 DOI: 10.1016/j.microrel.2025.115813

Shanyong Chen, Hanqing Luo, Liping Liang

{"title":"Research on the relative independence of failure mechanisms for mitigating passing word line induced row hammering","authors":"Shanyong Chen, Hanqing Luo, Liping Liang","doi":"10.1016/j.microrel.2025.115813","DOIUrl":"10.1016/j.microrel.2025.115813","url":null,"abstract":"<div><div>In this article, we investigate the Row Hammering (RH) failure with different n-type doping profiles based on 3D TCAD simulation. We propose a simulation structure called de-electrode structure (DS). By comparing the storage node (SN) capacitance voltage variations in the normal structure and the DS, we obtain the trend of charge change induced by electron migration (EM) and capacitive crosstalk (CC) respectively. The simulation result reveals that the mechanisms responsible for RH failure exhibit distinct contributions across different failure modes. CC is the main mechanism of the one-failure induced by passing word line (PWL), while EM and CC synergistically contribute to the zero-failure induced by PWL. According to the charge calculation results, we find that as the bit line (BL) junction depth <em>D</em><sub><em>BL</em></sub> increases, EM is continuously enhanced, while CC is suppressed. Therefore, we adjust the physical environment of DRAM cell through the PWL work function (WF) improvement and fluorine (F) implantation. This adjustment makes CC the suppression of is greater than the enhancement of EM. This optimization scheme improves the limitation of <em>D</em><sub><em>BL</em></sub> increase for RH failure suppression, which has important significance for RH failure suppression research.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115813"},"PeriodicalIF":1.6,"publicationDate":"2025-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144138656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Aging modelling of Li-ion battery systems based on accelerated tests 基于加速试验的锂离子电池系统老化建模

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-24 DOI: 10.1016/j.microrel.2025.115795

A. Toscani, M. Stighezza, M. Simonazzi, N. Delmonte, P. Cova, V. Bianchi, I. De Munari

引用次数: 0

Exploring the fracture mechanism of multilayer ceramic capacitors via combined simulation and experiment 通过仿真与实验相结合的方法，探讨了多层陶瓷电容器的断裂机理

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-24 DOI: 10.1016/j.microrel.2025.115800

Sen Yang , Qin Xu , Fei Shen , Liao-Liang Ke

{"title":"Exploring the fracture mechanism of multilayer ceramic capacitors via combined simulation and experiment","authors":"Sen Yang , Qin Xu , Fei Shen , Liao-Liang Ke","doi":"10.1016/j.microrel.2025.115800","DOIUrl":"10.1016/j.microrel.2025.115800","url":null,"abstract":"<div><div>As a basic component, multilayer ceramic capacitors (MLCCs) have been widely used in many engineering fields. Failure caused by printed circuit board flex deserves special attention throughout the entire lifecycle of MLCCs. In this failure pattern, the failure probabilities vary across different types of MLCCs. The initial damage location and the direction of cracking propagation display distinct characteristics. This paper presents the MLCC equivalent model by using homogenization theory in finite element method (FEM), and simulates the flex failure of different types of MLCCs. Three-point bending experiments are conducted to validate the FEM results, revealing the underlying cause of flex cracking. The failure pattern inferred by FEM aligns well with the experiment result, with the maximum error of only 7.56 %, demonstrating the equivalent model's effectiveness. Furthermore, we conduct a sensitivity analysis of geometric parameters, including the length-width ratio, terminal electrode width, stacking height, and solder joint height. Our study reveals the underlying mechanism of MLCC flex failure and identifies the key design factors influencing MLCC reliability. These findings provide valuable insights into the design, application, and enhancement of MLCC reliability.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115800"},"PeriodicalIF":1.6,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144131282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dependence between drain current saturation level and short-circuit robustness of p-GaN HEMTs p-GaN hemt漏极电流饱和水平与短路稳健性的关系

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-23 DOI: 10.1016/j.microrel.2025.115794

M.L. Dedew , S. Lefebvre , T.A. Nguyen , T.L. Le , V. Rustichelli , J. Oliveira , M. Alam , F. Coccetti

{"title":"Dependence between drain current saturation level and short-circuit robustness of p-GaN HEMTs","authors":"M.L. Dedew , S. Lefebvre , T.A. Nguyen , T.L. Le , V. Rustichelli , J. Oliveira , M. Alam , F. Coccetti","doi":"10.1016/j.microrel.2025.115794","DOIUrl":"10.1016/j.microrel.2025.115794","url":null,"abstract":"<div><div>This work presents an experimental investigation of drain current saturation (I<sub>D−SAT</sub>) effect on short-circuit (SC) robustness of 650 V normally-off gallium nitride (GaN) high electron mobility transistors (HEMTs). SC tests were performed at a drain-source voltage (V<sub>DS</sub>) of 400 V, varying parameters such as gate resistance (R<sub>G</sub>), on-state gate-source voltage (V<sub>GS</sub>), and parasitic source inductance (L<sub>S</sub>) on the device under test (DUT). As expected, variation on maximum of I<sub>D−SAT</sub> (I<sub>D−SAT−max</sub>) was observed by varying these parameters. In single shot destructive SCs, components demonstrated a very high robustness, withstanding SC durations of hundreds of microseconds. However, in repetitive SCs of very short durations, components proved extremely fragile, failing after only a few SC cycles, sometimes as few as two cycles. Results suggest that in repetitive SCs, the failure appears to result from a critical dissipated energy (E<sub>SC</sub>) being exceeded depending on several parameters. This critical E<sub>SC</sub> value also seems to depend on SC pulse width (t<sub>p</sub>). In one-shot destructive SCs, the cause of failure remains unclear, as no critical E<sub>SC</sub> or I<sub>D−SAT−max</sub> threshold was observed. However, it is important to note that, in destructive SCs, a correlation between I<sub>D−SAT−max</sub> and SC withstanding time (SCWT) has been identified.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115794"},"PeriodicalIF":1.6,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144116650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analytical modeling of CV and I-V characteristics in p-GaN gate HEMTs based on the unified 2DEG density expression 基于统一2DEG密度表达式的p-GaN栅极hemt的CV和I-V特性分析建模

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-21 DOI: 10.1016/j.microrel.2025.115789

Lili Zhang, Yanan Yin, Yiwu Qiu, Tao Wang, Pingwei Zhang, Xinjie Zhou

{"title":"Analytical modeling of CV and I-V characteristics in p-GaN gate HEMTs based on the unified 2DEG density expression","authors":"Lili Zhang, Yanan Yin, Yiwu Qiu, Tao Wang, Pingwei Zhang, Xinjie Zhou","doi":"10.1016/j.microrel.2025.115789","DOIUrl":"10.1016/j.microrel.2025.115789","url":null,"abstract":"<div><div>This work proposes a physics-based analytical model for p-GaN gate high electron mobility transistors (HEMTs), developed through a self-consistent solution of the Schrödinger-Poisson equations. The model explicitly accounts for voltage distribution across the device, focusing on voltage drops across the metal/p-GaN Schottky junction and the AlGaN barrier layer. A comprehensive analysis is conducted to evaluate the impact of several factors on the electrical characteristics of p-GaN gate HEMTs. The investigated factors include the net polarization charge density at the AlGaN/GaN interface, out-diffused Mg acceptor density in the AlGaN barrier, and depletion charge density in the unintentionally doped GaN (UID-GaN) buffer layer. Furthermore, a unified expression for the two-dimensional electron gas (2DEG) charge density is derived, which is valid across all operation regions. On this basis, expressions for gate capacitance and drain current are developed. The model's credibility is validated by the agreement between modeled and measured <em>C</em><img><em>V</em> and <em>I</em>-<em>V</em> characteristics across three p-GaN gate HEMT samples.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115789"},"PeriodicalIF":1.6,"publicationDate":"2025-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144106386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Modeling total ionizing dose radiation effects in p-type polycrystalline silicon thin film transistors p型多晶硅薄膜晶体管总电离剂量辐射效应模拟

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-20 DOI: 10.1016/j.microrel.2025.115788

Shaoman Peng , Haoliang Shan , Ruifan Yang , Yuan Liu , Wanling Deng

引用次数: 0

The impact of 10 MeV electron irradiation on switching characteristics of SiC MOSFET devices 10 MeV电子辐照对SiC MOSFET器件开关特性的影响

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-19 DOI: 10.1016/j.microrel.2025.115778

Xianghe Fu , Shuwen Guo , Wenbo Peng , Xiaolong Zhao , Quanzhe Zhu , Yongning He

{"title":"The impact of 10 MeV electron irradiation on switching characteristics of SiC MOSFET devices","authors":"Xianghe Fu , Shuwen Guo , Wenbo Peng , Xiaolong Zhao , Quanzhe Zhu , Yongning He","doi":"10.1016/j.microrel.2025.115778","DOIUrl":"10.1016/j.microrel.2025.115778","url":null,"abstract":"<div><div>The rigorous requirements of applications such as deep space exploration, nuclear power plants, and nuclear submarines, pose stringent demands on the radiation resistance of power devices. SiC exhibits excellent radiation resistance compared to Si, while the application of SiC power devices in electron radiation environments still requires further theoretical and experimental refinement. In particular, there is a lack of research on the impact of electron radiation on the switching characteristics of SiC power devices. In this work, we studied the electron radiation effects on the dynamic and static characteristics of SiC VDMOSFET via theoretical modeling, simulation analysis, and 10 MeV irradiation experiments. We further analyzed their radiation damage mechanisms, especially for the damage on the gate structure and drift region. Radiation-induced damage to the gate oxide is the main cause of changes in device characteristics. The experimental results demonstrate a nonlinear correlation between the radiation dose and the threshold voltage of SiC MOSFET devices. With the increase in radiation dose, the switching-on delay time and switching-off voltage/current change rate of the devices decrease, while the switching-off delay time and switching-on voltage/current change rate increase. Consequently, there is a reduction in switching-on losses and an increase in switching-off losses, which affect the thermal generation during the switching process of the device. We also conducted a comparative analysis with Si MOSFET devices. The dynamic and static characteristics of SiC MOSFET devices are found to be less affected by radiation compared to Si MOSFET devices, exhibiting superior radiation resistance.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"171 ","pages":"Article 115778"},"PeriodicalIF":1.6,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144084547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance characterization of lithium-ion battery and aging under constant stress conditions at low temperature 低温恒应力条件下锂离子电池性能表征及老化研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-17 DOI: 10.1016/j.microrel.2025.115785

O. Rafik, A. Capitaine, O. Briat, J.-M. Vinassa

引用次数: 0

Ultra-fast recovery transients in GaN MIS-HEMT submitted to OFF-state stress GaN miss - hemt在off状态应力下的超快速恢复瞬态

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-05-16 DOI: 10.1016/j.microrel.2025.115790

A. Cavaliere , N. Modolo , C. De Santi , G. Meneghesso , E. Zanoni , M. Meneghini

引用次数: 0