Microelectronics Reliability最新文献_第10页

Reliability prediction of multi-level power supply system based on Failure Precursor Parameters 基于故障前兆参数的多级电源系统可靠性预测

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-04 DOI: 10.1016/j.microrel.2025.115656

W.M. Liu , C. Chen , K.W. Xiao , Y. Yu , W. Zheng , M.T. Feng , G.F. Zhai

引用次数: 0

Driving waveform modification for investigating trade-off between switching loss and gate overshoot in SiC MOSFETs

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-04 DOI: 10.1016/j.microrel.2025.115653

Bang-Ren Chen , Cheng Sung , Yu-Sheng Hsiao , Wei-Chen Yu , Wei-Cheng Lin , Surya Elangovan , Yi-Kai Hsiao , Hao-Chung Kuo , Chang-Ching Tu , Tian-Li Wu

{"title":"Driving waveform modification for investigating trade-off between switching loss and gate overshoot in SiC MOSFETs","authors":"Bang-Ren Chen , Cheng Sung , Yu-Sheng Hsiao , Wei-Chen Yu , Wei-Cheng Lin , Surya Elangovan , Yi-Kai Hsiao , Hao-Chung Kuo , Chang-Ching Tu , Tian-Li Wu","doi":"10.1016/j.microrel.2025.115653","DOIUrl":"10.1016/j.microrel.2025.115653","url":null,"abstract":"<div><div>SiC MOSFETs are crucial for efficient power conversion in electric vehicles, especially in the traction inverters operating on 800-V battery architectures. Their unipolar nature offers significantly lower switching losses compared to bipolar Si IGBTs. However, achieving high efficiency without compromising reliability remains a challenge. This study investigates the impact of driving waveforms on the SiC MOSFET switching loss and overshoot. Unlike conventional gate drivers, our approach involves a closed-loop amplifier combined with a push-pull circuit, enabling controllable gate driving waveforms through strategically placing a low-pass filter before the amplifier, so called the pre-RC method. Compared to the conventional method of placing R<sub>G</sub> in front of the gate, the pre-RC method shows notable decrease in turn-on switching loss for the t<sub>rising</sub> shorter than about 0.4 μs. The lower switching loss can be attributed to the larger |dV<sub>GS</sub>/dt|at around the V<sub>th</sub> of the SiC MOSFET. However, the larger|dV<sub>GS</sub>/dt|also leads to the larger V<sub>GS</sub> overshoot. This work demonstrates that a well balance between the switching loss and overshoot can be found by optimizing the driving waveform.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"167 ","pages":"Article 115653"},"PeriodicalIF":1.6,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of gate oxide thickness on gate latent damage induced by heavy ion in SiC power MOSFETs

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-03 DOI: 10.1016/j.microrel.2025.115663

Shiwei Zhao , Yuzhu Liu , Xiaoyu Yan , Peipei Hu , Xinyu Li , Qiyu Chen , Pengfei Zhai , Teng Zhang , Yang Jiao , Youmei Sun , Jie Liu

{"title":"Effect of gate oxide thickness on gate latent damage induced by heavy ion in SiC power MOSFETs","authors":"Shiwei Zhao , Yuzhu Liu , Xiaoyu Yan , Peipei Hu , Xinyu Li , Qiyu Chen , Pengfei Zhai , Teng Zhang , Yang Jiao , Youmei Sun , Jie Liu","doi":"10.1016/j.microrel.2025.115663","DOIUrl":"10.1016/j.microrel.2025.115663","url":null,"abstract":"<div><div>SiC materials and devices hold significant promise for aerospace applications owing to their high thermal conductivity, temperature tolerance, and resistance to harsh conditions. However, SiC power devices often encounter single event effects (SEEs) induced by high-energy ions, which limit the applications in space radiation environments. In this study, we demonstrate the impact of thickness of gate oxide layer on latent gate oxide damage in Silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs) during heavy-ion irradiation, by using a combination of experiments and technical computer-aided design (TCAD) simulations. The study exposes SiC MOSFETs with gate oxide thicknesses of 40 nm and 60 nm to 78Kr ion irradiation followed by post-irradiation gate stress (PIGS) tests, scrutinizing failure characteristics induced by irradiation. Through TCAD simulations, the internal dynamics of the gate oxide layer are scrutinized, revealing that escalated electric fields and localized energy pulses predominantly precipitate gate dielectric layer damage. The results suggest that gate oxide thickness markedly impacts latent gate damage, with thinner oxide layers exhibiting heightened susceptibility to electrical breakdown. These findings enrich the comprehension of SiC power device reliability in radiation-rich environments, furnishing invaluable insights for aerospace applications.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"167 ","pages":"Article 115663"},"PeriodicalIF":1.6,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143529661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Heat-resistant durability of AMB substrates for SiC power devices: AlN and Si3N4, which one is thermally strong?

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-03 DOI: 10.1016/j.microrel.2025.115676

Yun-Chan Kim , Dong-Yurl Yu , Shin-Il Kim , Yong-Mo Kim , Dongjin Byun , Junghwan Bang , Dongjin Kim

{"title":"Heat-resistant durability of AMB substrates for SiC power devices: AlN and Si3N4, which one is thermally strong?","authors":"Yun-Chan Kim , Dong-Yurl Yu , Shin-Il Kim , Yong-Mo Kim , Dongjin Byun , Junghwan Bang , Dongjin Kim","doi":"10.1016/j.microrel.2025.115676","DOIUrl":"10.1016/j.microrel.2025.115676","url":null,"abstract":"<div><div>In terms of long-term reliability, the present study investigated the heat-resistant durability of both AlN- and Si<sub>3</sub>N<sub>4</sub> cored active metal brazing (AMB) substrates to demonstrate which material can be a better option for use in silicon carbide (SiC) power applications. Interfacial degradation behaviors, peeling strengths, and fracture modes of the AlN- and Si<sub>3</sub>N<sub>4</sub>-AMB substrates were carried out before and after thermal shock cycling tests. The interfacial microstructure analysis of the AlN- and Si₃N₄-AMB substrates observed different brazing filler metal (BFM) reaction layers depending on the type of ceramic. As a result, it was noteworthy that AlN and Si<sub>3</sub>N<sub>4</sub>-AMB substrates subjected to repeated thermal shock cycles with Δ190 °C for up to 1000 cycles represented different failure modes with different strength in the peel strength test, respectively. Namely, these two kinds of ceramic type AMB substrates have fundamental differences in thermal shock durability. Nevertheless, cracks between the AMB and ceramic layers were equally caused on the edge side of the AlN and Si<sub>3</sub>N<sub>4</sub> cases after the thermal shock test. These cracks are the underlying principles that explain the load-extension plots in the peel strength test. This study systematically discussed the heat-resistant reliability of AMB substrates with AlN and Si<sub>3</sub>N<sub>4</sub> as key materials for application to next-generation SiC power devices.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"167 ","pages":"Article 115676"},"PeriodicalIF":1.6,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143534751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

FEM-based development of novel 3D-printable plastic direct coolers for power semiconductor modules

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-03 DOI: 10.1016/j.microrel.2025.115671

N. Delmonte, D. Spaggiari, C. Sciancalepore, R. Menozzi, P. Cova

引用次数: 0

Physics-informed Markov chains for remaining useful life prediction of wire bonds in power electronic modules

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-02 DOI: 10.1016/j.microrel.2025.115644

M. Ghrabli , M. Bouarroudj , L. Chamoin , E. Aldea

{"title":"Physics-informed Markov chains for remaining useful life prediction of wire bonds in power electronic modules","authors":"M. Ghrabli , M. Bouarroudj , L. Chamoin , E. Aldea","doi":"10.1016/j.microrel.2025.115644","DOIUrl":"10.1016/j.microrel.2025.115644","url":null,"abstract":"<div><div>This paper presents a new approach to estimate the remaining useful life of a power electronic module where failure is caused by degradation in the wire bonds. The novelty of this work is that estimation is given for each loading cycle as opposed to estimating only the number of cycles to failure. A direct consequence is that one can make predictions on variable loading profiles using the proposed method, whereas classical solutions assume periodic loading, which limits their applicability. Experimental data of failure tests are used alongside finite element simulation to mechanically describe the state of the power module at each cycle. Using these mechanical quantities, we iteratively infer how the degradation evolves using Markov chains until failure. A first machine learning algorithm is used to establish a relationship between the degradation and the health indicator, and a second algorithm is used as a surrogate model for finite element simulations to drastically reduce computational time. Results show high extrapolation and interpolation capabilities of the obtained model, meaning that precise predictions can be obtained from experimental data where loading conditions are significantly different from realistic conditions.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"167 ","pages":"Article 115644"},"PeriodicalIF":1.6,"publicationDate":"2025-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143527164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation and thermal ageing of power semiconductor die attachments based on porous film electrodeposition

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-02 DOI: 10.1016/j.microrel.2025.115648

G. Janod , L. Chachay , J. Schoenleber , Y. Avenas , D. Bouvard , R. Daudin , J.-M. Missiaen , M.-P. Gigandet , J.-Y. Hihn , R. Khazaka

引用次数: 0

Cause analysis on abnormal defects between metal layers of IGBT dies for power modules

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-01 DOI: 10.1016/j.microrel.2025.115642

Jie Chen , Yi Gong , Zhen-Guo Yang

{"title":"Cause analysis on abnormal defects between metal layers of IGBT dies for power modules","authors":"Jie Chen , Yi Gong , Zhen-Guo Yang","doi":"10.1016/j.microrel.2025.115642","DOIUrl":"10.1016/j.microrel.2025.115642","url":null,"abstract":"<div><div>IGBT dies are widely applied in power modules for new energy vehicles at present, and meanwhile, the reliability has been a research emphasis. As addressed in this paper, abnormal defects at the Al-Ni interfaces of IGBT dies resulted in the failure of power modules for new energy vehicles during the power cycling tests. Based on the failure characteristics, a systematical investigation was conducted to explore the root causes of these defects through a series of study methods such as process traceability, characterization analysis and theoretical analysis. At last, the root causes of the failure were determined through the comprehensive analysis. Furthermore, the formation processes of abnormal defects under different states were reverted, and the detailed formation mechanisms were also confirmed from the special separation characteristics at the Al-Ni interface. Besides, the corresponding countermeasures were also proposed according to the conclusions obtained. It was believed that the achievements would help improve the preparation quality of metal layers of IGBT dies and enhance the integral reliability of power modules for new energy vehicles.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"167 ","pages":"Article 115642"},"PeriodicalIF":1.6,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143519529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evolution analysis of mechanical behaviours of through‑silicon via under thermal cycling load

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-01 DOI: 10.1016/j.microrel.2025.115647

Kaihong Hou , Zhengwei Fan , Xun Chen , Shufeng Zhang , Yashun Wang , Yu Jiang

{"title":"Evolution analysis of mechanical behaviours of through‑silicon via under thermal cycling load","authors":"Kaihong Hou , Zhengwei Fan , Xun Chen , Shufeng Zhang , Yashun Wang , Yu Jiang","doi":"10.1016/j.microrel.2025.115647","DOIUrl":"10.1016/j.microrel.2025.115647","url":null,"abstract":"<div><div>As the key interconnecting structure of high-performance 3D chips, through‑silicon via (TSV) is of great significance to improve the packaging efficiency and computing performance of chips. However, under the increasingly complex and severe service environment, the failure mechanism of TSV is increasingly becoming a key problem hindering the development of 3D chips in the future. In this study, based on the crystal plasticity theory and with the help of literature data, the plasticity constitutive considering thermal expansion coefficient and temperature dependent plasticity parameters is constructed to simulate the mechanical behavior evolution mechanism of TSV under thermal cycling load. Results show that the mean Cu grain area increases from 55.42 μm<sup>2</sup> to 65.74 μm<sup>2</sup> after thermal cyclic loading, and the mean misorientation angle decreases from 41.34° to 35.53° correspondingly. The stability at the grain boundary is lower than that inside the grain, which can be proof by the resolved shear stress distribution, shear rate distribution and slip resistance distribution in different slip system. This study can be regard as the basis for the reliability research in extreme service environments, and has certain reference significance for promoting the development of 3D chips.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"167 ","pages":"Article 115647"},"PeriodicalIF":1.6,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143527162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Experimental and numerical analysis of cyclic ratchetting and low cycle fatigue behaviour in meander-shaped interconnects for stretchable electronics applications

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-01 DOI: 10.1016/j.microrel.2025.115632

Amir Sarikhan Khelejani , Amir Jahanshahi , Mahnaz Shamshirsaz

{"title":"Experimental and numerical analysis of cyclic ratchetting and low cycle fatigue behaviour in meander-shaped interconnects for stretchable electronics applications","authors":"Amir Sarikhan Khelejani , Amir Jahanshahi , Mahnaz Shamshirsaz","doi":"10.1016/j.microrel.2025.115632","DOIUrl":"10.1016/j.microrel.2025.115632","url":null,"abstract":"<div><div>Stretchable interconnect is a crucial component of a wearable device, responsible for establishing electrical connections throughout the system. Among various technologies, thin film-based interconnects provide superior electrical conductivity comparable to bulk metals, enabling high-quality signals in diverse wearable applications. Nevertheless, their relatively low mechanical fatigue life remains a significant challenge. Research has shown that flexible polymer-supported interconnects exhibit improved fatigue life compared to non-supported counterparts.</div><div>Albeit widespread adoption of thin film-based stretchable tracks, underlying physical principles governing their fatigue life is not thoroughly studied. In this work, stretchable interconnects are fabricated and analysed using a cost-effective method suitable for mass fabrication. This study focuses on modelling of the stretchable interconnects using FEM under both static and dynamic loadings to discover the significant role of flexible polymer in increasing the cyclic fatigue life. Polyimide (PI)-supported interconnects show a major decrease (~ 20 %) in maximum strain under static load compared to non-supported interconnects. It has been demonstrated that under dynamic loading, non-supported interconnects fail mostly based on ratcheting strain, whereas low cycle fatigue (LCF) governs the failure mechanism of PI supported tracks. The latter happens due to the beneficial residual stress imposed by the flexible support layer. The findings are supported by characterizing the experimentally fabricated stretchable interconnects.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"167 ","pages":"Article 115632"},"PeriodicalIF":1.6,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143519527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0