Microelectronics Reliability最新文献_第10页

Threshold voltage hysteresis investigation of SiC MOSFETs with different structures under various measurement conditions 不同结构SiC mosfet在不同测量条件下的阈值电压滞回特性研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-09 DOI: 10.1016/j.microrel.2025.115657

Dong Xie , Patrick Heimler , Roman Boldyrjew-Mast , Mohamed Alaluss , Sven Thiele , Josef Lutz , Thomas Basler

引用次数: 0

Improved 2D charge carrier quantification workflow for scanning spreading resistance microscopy 改进二维电荷载流子定量工作流程扫描扩展电阻显微镜

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-09 DOI: 10.1016/j.microrel.2025.115646

T. Adlmaier , S. Doering , B. Binder , D.K. Simon , T. Mikolajick , L.M. Eng

引用次数: 0

PBO delamination and RDL corrosion detection on WLCSP package products WLCSP封装产品的PBO分层和RDL腐蚀检测

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-09 DOI: 10.1016/j.microrel.2025.115645

K. Bidaj , Y. Chen , J. Chang , O. Atance-Loustaunau , F. Braud , M. Medda

引用次数: 0

Reliability prediction of electronic components based on physical of failure with manufacturing parameters fluctuations 基于制造参数波动的物理失效的电子元件可靠性预测

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-08 DOI: 10.1016/j.microrel.2025.115662

Zijian Guo , Hao Chen , Yifan Hu , Ji Jiang , Xuerong Ye

{"title":"Reliability prediction of electronic components based on physical of failure with manufacturing parameters fluctuations","authors":"Zijian Guo , Hao Chen , Yifan Hu , Ji Jiang , Xuerong Ye","doi":"10.1016/j.microrel.2025.115662","DOIUrl":"10.1016/j.microrel.2025.115662","url":null,"abstract":"<div><div>Reliability prediction based on the physics of failure (PoF) methodology involves examining the physical variables that impact the performance parameters of electronic components, developing mathematical models to describe the evolution of these parameters, and predicting the components' reliable operational lifespan. However, the current PoF model does not account for the influence of manufacturing parameters, such as material properties and structural characteristics, which limits the accuracy of reliability predictions. Therefore, establishing a PoF model that incorporates manufacturing parameters is a critical challenge in enhancing reliability prediction accuracy. To overcome this limitation, an improved PoF model incorporating manufacturing parameters is proposed in this study. The study examines how the manufacturing parameters influence the PoF model, then develops an adapted PoF model that incorporates these factors for improved predictive accuracy. Then, a parameter estimation method based on Long Short-Term Memory (LSTM) is proposed, with the Hybrid Bat Algorithm (HBA) employed to adaptively optimize the network's parameters. Finally, the effectiveness of the proposed method is demonstrated through a case study on an electromagnetic relay. Compared to the actual lifespan, the reliability prediction model incorporating manufacturing parameters accurately estimates the relay's lifetime, achieving deviation of only 5.8 % at 100,000 cycles, thereby verifying the model is feasibility and effectiveness.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115662"},"PeriodicalIF":1.6,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143578727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wire bonding failure characterization of an IGBT based power module through impedance analysis 基于阻抗分析的基于IGBT的功率模块的线键合失效特征

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-08 DOI: 10.1016/j.microrel.2025.115669

P.-E. Vidal , S. Baffreau , G. Viné , A. Gopishetti , T.L. Long

引用次数: 0

Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase 非状态下100v GaN晶体管双重退化的证据：从介电失效到亚阈值电流增加

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-07 DOI: 10.1016/j.microrel.2025.115649

Riccardo Fraccaroli , Manuel Fregolent , Mirco Boito , Carlo De Santi , Eleonora Canato , Isabella Rossetto , Maria Eloisa Castagna , Cristina Miccoli , Alfio Russo , Ferdinando Iucolano , Alessio Pirani , Giansalvo Pizzo , Gaudenzio Meneghesso , Enrico Zanoni , Matteo Meneghini

引用次数: 0

Thermal ageing monitoring in CuAl intermetallic joints through electrical resistance drift: Comparative study of lifetime potential in pure and alloyed copper wires 通过电阻漂移监测CuAl金属间接头的热老化：纯铜线和合金铜线寿命电位的比较研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-07 DOI: 10.1016/j.microrel.2025.115660

R. Carluccio , A. Mancaleoni , G. Losacco , R. Villa , A. Serafini , L. Guarino , D. Dellasega

{"title":"Thermal ageing monitoring in CuAl intermetallic joints through electrical resistance drift: Comparative study of lifetime potential in pure and alloyed copper wires","authors":"R. Carluccio , A. Mancaleoni , G. Losacco , R. Villa , A. Serafini , L. Guarino , D. Dellasega","doi":"10.1016/j.microrel.2025.115660","DOIUrl":"10.1016/j.microrel.2025.115660","url":null,"abstract":"<div><div>Copper has pervasively replaced gold as preferred wire bonding material in Integrated Circuits (IC) plastic packaging. Different types of wires are available today in the market, with specific annealing treatments, coating and doping solutions aimed at optimizing bondability and reliability performances of the joints. In this study, the electrical resistance drift of packaged daisy chains has been analyzed to compare the lifetime potential of pure and alloyed copper wires under accelerated High Temperature Storage (HTS). Two aluminum-based bond-pads with different composition and thickness have been included in the experimental matrix. The results obtained through this statistically efficient and non-destructive methodology have been correlated with more “classical” readout data based on wire pull test, polished cross sections for Inter-Metallic Compounds (IMC) thickness measurement and TEM lamellas for phases stoichiometry characterization. Comparative analysis of the drift plots has pointed out a specific electrical signature for the consumption of the aluminum source under the IMC joint, confirmed by a Finite Element Method (FEM) simulation. A systematic delay in the IMC evolution has been demonstrated in all the samples with alloyed copper wires, correlating their lower ohmic drift with a lower thickness and a different composition of the IMC phases growing during HTS.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115660"},"PeriodicalIF":1.6,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143562347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reliability assurance in foldable displays: Design of experiment-based testing strategy for market-ready products 可折叠显示器的可靠性保证：面向市场产品的基于实验的测试策略设计

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-07 DOI: 10.1016/j.microrel.2025.115673

U.H. Jeong , S.Y. Lim , S.S. Han

{"title":"Reliability assurance in foldable displays: Design of experiment-based testing strategy for market-ready products","authors":"U.H. Jeong , S.Y. Lim , S.S. Han","doi":"10.1016/j.microrel.2025.115673","DOIUrl":"10.1016/j.microrel.2025.115673","url":null,"abstract":"<div><div>Foldable displays have many moving parts and can operate in different environments. These conditions lead to potential interactions between diverse failure mechanisms and stresses, making reliability assurance a major challenge. Ensuring reliability while considering all these potential failure mechanisms and stresses is very challenging. This paper introduces a method for efficiently evaluating the reliability and lifespan of foldable displays. First, potential failure modes associated with foldable displays were identified, and corresponding influencing factors were determined. In addition to the fundamental stress factor of repetitive folding, temperatures, humidity, and temperature changes were chosen as influencing factors. To assess the influence of these factors on the display performance, two levels of stress severity were selected. Using these three factors and two stress levels, experiments were conducted using the design of experiments (DOE) method. The test results intuitively revealed the principal effects of each stress factor on the final quality and performance of the display. We found that low temperatures and temperature changes can affect the catastrophic failure of the display panel, and the number of folds impacts the degradation of the hinge parts. The proposed DOE-based evaluation method provides an efficient and economical approach for assessing the reliability of foldable displays.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115673"},"PeriodicalIF":1.6,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143562349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Degradation prediction of IGBT module based on CNN-LSTM network 基于CNN-LSTM网络的IGBT模块退化预测

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-07 DOI: 10.1016/j.microrel.2025.115639

Liangjun Bai, Meng Huang, Shangzhi Pan, Kang Li, Xiaoming Zha

{"title":"Degradation prediction of IGBT module based on CNN-LSTM network","authors":"Liangjun Bai, Meng Huang, Shangzhi Pan, Kang Li, Xiaoming Zha","doi":"10.1016/j.microrel.2025.115639","DOIUrl":"10.1016/j.microrel.2025.115639","url":null,"abstract":"<div><div>The reliability of insulated gate bipolar transistor (IGBT) directly affects the safe and stable operation of power electronic system. Based on the IGBT accelerated aging open data set provided by NASA PCoE, the peak collector-emitter voltage during IGBT shutdown is selected as the failure characteristic parameter. Convolutional neural network and long short-term memory network (CNN-LSTM) model is used to predict IGBT failure precursor parameters and estimate the degradation behavior of IGBT modules in this paper. The sliding window method is employed to construct input and output data. When the window width is 3, the prediction model works best. By running the proposed model many times, the average values of MAPE, MAE, MSE and RMSE of the CNN-LSTM network proposed in this paper are 0.0038,0.0468,0.0059,0.0600, which have higher accuracy than other networks. At the same time, the four indicators of the CNN-LSTM model are the most stable and the prediction credibility is higher through the box plot analysis. This prediction method provides a new idea for IGBT degradation behavior prediction.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115639"},"PeriodicalIF":1.6,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143562348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of humidity protection behavior of protective coatings on PCB with components 含元件PCB板防护涂层的防潮性能研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-06 DOI: 10.1016/j.microrel.2025.115672

Ioannis Mantis , Anish Rao Lakkaraju , Mike Bixenman , Kapil Kumar Gupta , Rajan Ambat

{"title":"Investigation of humidity protection behavior of protective coatings on PCB with components","authors":"Ioannis Mantis , Anish Rao Lakkaraju , Mike Bixenman , Kapil Kumar Gupta , Rajan Ambat","doi":"10.1016/j.microrel.2025.115672","DOIUrl":"10.1016/j.microrel.2025.115672","url":null,"abstract":"<div><div>In this work, humidity performance of two types of protective coatings was investigated on a PCB with typical components with the aim of understanding synergistic effect of coating/process and board design. Coatings are 2-component Polyurethane (PU, mixture of Ether and Ester polyols) and ultra-thin Plasma enhanced chemical vapor deposition (PECVD) coating. Test PCB used for testing consisted of components such as a Quad flat no‑lead package (QFN), Ball grid array (BGA), and Pin connector. The performance of coated PCB was evaluated in terms of process-induced no-clean flux residues introduced during reflow and wave soldering of components. The test profile used was constant humidity (95 %) condition with temperature cycling (40°C–65°C). Moisture permeation through the coatings and its effects on component performance was evaluated using electrochemical AC impedance and subsequent DC potentiostatic measurement under climatic exposure. Coating-PCB-Components interfaces were analyzed using Scanning electron microscopy (SEM) and Energy dispersive spectroscopy (EDS) before and after testing. The study revealed that the PCBA cleanliness after a soldering process is a major factor determining the coating performance, component geometrical shape and standoff height affected uniformity of coating and under-filling affecting humidity performance.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115672"},"PeriodicalIF":1.6,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143561561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0