Modeling total ionizing dose radiation effects in p-type polycrystalline silicon thin film transistors

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-05-20 DOI:10.1016/j.microrel.2025.115788

Shaoman Peng , Haoliang Shan , Ruifan Yang , Yuan Liu , Wanling Deng

引用次数: 0

Abstract

A continuous analytical model is presented for the radiation-induced degradation of p-type polysilicon Thin Film Transistors (TFTs). Drawing upon the analyses of the physical mechanisms encompassing hole trapping in the oxide layer and proton-induced generation of interface traps, a physical-based model is developed to explain the correlations between ionizing radiation doses and the resultant densities of oxide-trapped and interface-trapped charges. The influences of these trapped charges are embedded in the computation of the explicit surface potential. By comparing with the experimental characteristics of devices after gamma-ray irradiation, the validity of the model is verified, thereby ensuring the accurate simulation of the degradation in I-V characteristics of p-type polysilicon TFTs attributable to exposure to ionizing radiation.

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p型多晶硅薄膜晶体管总电离剂量辐射效应模拟

提出了p型多晶硅薄膜晶体管辐射降解的连续解析模型。在分析了氧化层空穴捕获和质子诱导界面陷阱产生的物理机制的基础上，建立了一个基于物理的模型来解释电离辐射剂量与氧化陷阱和界面陷阱电荷密度之间的相关性。这些被捕获电荷的影响被嵌入到显表面势的计算中。通过与伽玛射线辐照后器件的实验特性进行对比，验证了模型的有效性，从而保证了p型多晶硅TFTs在电离辐射照射下I-V特性退化的准确模拟。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.