GaN miss - hemt在off状态应力下的超快速恢复瞬态

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2025-05-16 DOI:10.1016/j.microrel.2025.115790

A. Cavaliere , N. Modolo , C. De Santi , G. Meneghesso , E. Zanoni , M. Meneghini

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引用次数: 0

摘要

我们研究了在电源应用中正常开启（NON） mish - hemt中由OFF状态应力条件引起的退化。通过自定义设置，通过考虑应力期间阈值电压值随时间的变化和随后的恢复阶段来跟踪设备的状态。在胁迫和恢复之间的过渡过程中，我们观察到VTH在10 μs内立即部分恢复（70%），而剩余的VTH在100 μs左右恢复。通过专门的分析，我们第一次成功地研究了这种超快速恢复瞬态，我们观察到来自2DEG的电子与电离供体的重组是这种动态的原因。

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Ultra-fast recovery transients in GaN MIS-HEMT submitted to OFF-state stress

We investigate the degradation induced by an OFF state stress condition in normally-on (NON) MIS-HEMTs for power applications. The state of the devices was tracked by considering the shift in the threshold voltage value over time during the stress and the following recovery phase by means of a custom setup. During the transition between stress and recovery, we observed an immediate partial recovery of the V_TH (70 %) that occurs in <10 μs, while the remaining V_TH is recovered in about 100 s.

With a dedicated analysis, we managed to investigate this ultra-fast recovery transient for the first time, and we observed that the recombination of electrons from 2DEG with ionized donors is responsible for this dynamic.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.