Microelectronics Reliability最新文献_第9页

RRAMulator: An efficient FPGA-based emulator for RRAM crossbar with device variability and energy consumption evaluation RRAMulator：一个高效的基于fpga的RRAM交叉杆仿真器，具有器件可变性和能耗评估

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-12 DOI: 10.1016/j.microrel.2025.115630

Jianan Wen , Fabian Luis Vargas , Fukun Zhu , Daniel Reiser , Andrea Baroni , Markus Fritscher , Eduardo Perez , Marc Reichenbach , Christian Wenger , Milos Krstic

{"title":"RRAMulator: An efficient FPGA-based emulator for RRAM crossbar with device variability and energy consumption evaluation","authors":"Jianan Wen , Fabian Luis Vargas , Fukun Zhu , Daniel Reiser , Andrea Baroni , Markus Fritscher , Eduardo Perez , Marc Reichenbach , Christian Wenger , Milos Krstic","doi":"10.1016/j.microrel.2025.115630","DOIUrl":"10.1016/j.microrel.2025.115630","url":null,"abstract":"<div><div>The in-memory computing (IMC) systems based on emerging technologies have gained significant attention due to their potential to enhance performance and energy efficiency by minimizing data movement between memory and processing unit, which is especially beneficial for data-intensive applications. Designing and evaluating systems utilizing emerging memory technologies, such as resistive RAM (RRAM), poses considerable challenges due to the limited support from electronics design automation (EDA) tools for rapid development and design space exploration. Additionally, incorporating technology-dependent variability into system-level simulations is critical to accurately assess the impact on system reliability and performance. To bridge this gap, we propose RRAMulator, a field-programmable gate array (FPGA) based hardware emulator for RRAM crossbar array. To avoid the complex device models capturing the nonlinear current–voltage (IV) relationships that degrade emulation speed and increase hardware utilization, we propose a device and variability modeling approach based on device measurements. We deploy look-up tables (LUTs) for device modeling and use the multivariate kernel density estimation (KDE) method to augment existing data, extending data variety and avoiding repetitive data usage. The proposed emulator achieves cycle-accurate, real-time emulations and provides information such as latency and energy consumption for matrix mapping and vector–matrix multiplications (VMMs). Experimental results show a significant reduction in emulation time compared to conventional behavioral simulations. Additionally, an RRAM-based discrete Fourier transform (DFT) accelerator is analyzed as a case study featuring a range of in-depth system assessments.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115630"},"PeriodicalIF":1.6,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Long-term (8000 h) reliability and failures of high-power LEDs for outdoor lighting stressed at high ambient temperatures 户外照明用大功率led在高温环境下的长期（8000小时）可靠性和故障

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-12 DOI: 10.1016/j.microrel.2025.115634

A. Caria , R. Fraccaroli , G. Pierobon , T. Castellaro , A. Huang , J. Magnien , J. Rosc , Gy Lipák , G. Hantos , J. Hegedüs , C. De Santi , M. Buffolo , N. Trivellin , E. Zanoni , A. Poppe , G. Meneghesso , M. Meneghini

{"title":"Long-term (8000 h) reliability and failures of high-power LEDs for outdoor lighting stressed at high ambient temperatures","authors":"A. Caria , R. Fraccaroli , G. Pierobon , T. Castellaro , A. Huang , J. Magnien , J. Rosc , Gy Lipák , G. Hantos , J. Hegedüs , C. De Santi , M. Buffolo , N. Trivellin , E. Zanoni , A. Poppe , G. Meneghesso , M. Meneghini","doi":"10.1016/j.microrel.2025.115634","DOIUrl":"10.1016/j.microrel.2025.115634","url":null,"abstract":"<div><div>Modern solid-state lighting systems allowed to enhance the energy efficiency of light sources, improve quality and reduce the related costs; however, the reliability of high-power light-emitting diodes (LEDs) is a critical aspect, especially in systems where high powers/small footprints are required.</div><div>In this paper, the long-term reliability of high-power light emitting diodes (LEDs) for outdoor lighting is analyzed. LEDs were stressed for 8000 h near their absolute maximum current, at different ambient temperatures (45 °C, 65 °C, 85 °C and 105 °C). The devices were mounted on metal-core printed circuit boards (PCBs), 8 LEDs per PCB. LEDs were characterized individually by means of I-V characterizations and power spectral density measurements. LEDs stressed at the lowest temperatures, which junction temperature was within absolute maximum rating, showed almost no degradation, whereas LEDs stressed at 85 °C and 105 °C, with junction temperature exceeding absolute maximum, showed an initial gradual degradation, followed by a catastrophic degradation, due to silicone cracking and darkening. X-ray imaging and shear tests highlighted a solder degradation. Remarkably, negligible thermal resistance variation was measured, but junction temperature increased during the stress. This increase was attributed to gradual silicone degradation, that increased silicone lens light absorption in a positive feedback loop, leading to the cracking/darkening of the lens.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115634"},"PeriodicalIF":1.6,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

About the influence of temperature operation and packaging stress on the threshold for catastrophic optical damage in laser diodes 研究了温度操作和封装应力对激光二极管灾难性光损伤阈值的影响

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-12 DOI: 10.1016/j.microrel.2025.115695

Jorge Souto, José Luis Pura, Julian Anaya, Juan Jimenez

引用次数: 0

Active gate driver for current overshoot suppression of SiC+Si hybrid switches with dynamic gate current regulation 具有动态门电流调节的SiC+Si混合开关的电流超调抑制有源门驱动器

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-12 DOI: 10.1016/j.microrel.2025.115689

Ping Liu , Yongjie Liu , Qi Cao , Biao Xiao , Mingbin Tang , Chunming Tu , Bin Yu

{"title":"Active gate driver for current overshoot suppression of SiC+Si hybrid switches with dynamic gate current regulation","authors":"Ping Liu , Yongjie Liu , Qi Cao , Biao Xiao , Mingbin Tang , Chunming Tu , Bin Yu","doi":"10.1016/j.microrel.2025.115689","DOIUrl":"10.1016/j.microrel.2025.115689","url":null,"abstract":"<div><div>Hybrid Switch (HyS) is consisted of a high-current Si-insulated gate bipolar transistor (IGBT) and a low-current Silicon Carbide (SiC)-MOSFET connected in parallel, which has been widely studied due to their high efficiency and low cost. In general, to realize the zero-voltage conduction of IGBTs, the switching timing of the Hys is usually chosen to turn on the SiC earlier or at the same instant. However, HyS will have current overcurrent stress problem in practical applications, resulting in the maximum current rating being limited. In this paper, an active drive circuit is proposed to suppress the SiC MOSFET current overshoot by extracting part of the driving current during the SiC current rise phase, so as to ensure the operational reliability of the hybrid switches. A double-pulse test platform was built to verify the proposed driver circuit under different load current conditions. The experimental results show that compared with the conventional gate driver (CGD) circuit, the Si/SiC hybrid switches with the active gate driver(AGD) circuit proposed in this paper suppresses the current overshoot of the SiC by 38.3 %, 28.4 %, and 22 % in the heavy-load, medium-load, and light-load conditions, respectively, when the drain resistance is selected to be 3 Ω. The peak current of the SiC is within the limit of the safe operating area, while the increased switching loss is within the acceptable range.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115689"},"PeriodicalIF":1.6,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143611528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Device edge termination effects on TDDB in galvanic isolators based on polymeric dielectrics 基于聚合物介质的电隔离器中器件边缘终止对TDDB的影响

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-12 DOI: 10.1016/j.microrel.2025.115670

Matteo Greatti , Jurij L. Mazzola , Lorenzo Cantù , Marco Salina , Fabrizio Speroni , Michele Lauria , Francesco Guzzi , Donata Asnaghi , Dario Paci , Vincenzo Marano , Alessandro Spinelli , Christian Monzio Compagnoni , Gerardo Malavena

引用次数: 0

Gate lifetime investigation at low temperature for p-GaN HEMT 低温下p-GaN HEMT栅极寿命研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-11 DOI: 10.1016/j.microrel.2025.115658

M. Alam , V. Rustichelli , M. Zerarka , C. Banc , J. Pieprzyk , O. Perrotin , R. Ceccarelli , D. Trémouilles , M. Matmat , F. Coccetti

{"title":"Gate lifetime investigation at low temperature for p-GaN HEMT","authors":"M. Alam , V. Rustichelli , M. Zerarka , C. Banc , J. Pieprzyk , O. Perrotin , R. Ceccarelli , D. Trémouilles , M. Matmat , F. Coccetti","doi":"10.1016/j.microrel.2025.115658","DOIUrl":"10.1016/j.microrel.2025.115658","url":null,"abstract":"<div><div>This paper investigates the time-dependent gate degradation of Schottky-type p-GaN gate transistors by the application of constant electrical stress until the breakdown of the device, indicated by a sudden increase in the gate leakage current. Tests are performed at voltage levels outside the datasheet limits to accelerate the occurrence of failure. To understand the impact of temperature on the failure mechanism, tests encompass temperature ranges from −55 °C to 80 °C, within datasheet recommendations. Results demonstrate that the lower the temperature, the shorter the lifetime, indicating a negative activation energy. Results also present a non-constant activation energy within the range of tested temperatures, demonstrating a complex temperature dependence of the failure mechanism that might not be unique over this temperature range. A very low lifetime of only one day was estimated at −55 °C at the nominal datasheet voltage. The validity of the projection was experimentally confirmed. This underlines the importance of further investigating the gate behavior at low temperatures, as it could be critical for certain applications. Additionally, this challenges the standard gate reliability tests typically performed at the maximum temperature rating of the device, which do not appear to represent the worst-case condition for the gate lifetime.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115658"},"PeriodicalIF":1.6,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143592879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-11 DOI: 10.1016/j.microrel.2025.115698

A. Marcuzzi , M. Avramenko , C. De Santi , P. Moens , G. Meneghesso , E. Zanoni , M. Meneghini

引用次数: 0

On the influence of the porosity and homogeneity of sintered die-attach layers on the power cycling performance 烧结模附层的孔隙率和均匀性对功率循环性能的影响

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-10 DOI: 10.1016/j.microrel.2025.115691

L. Mikutta, F. Otto, J. Schadewald

引用次数: 0

On the validity of rainflow counting-based lifetime assessment for power electronics assembly 基于雨流计数的电力电子组件寿命评估有效性研究

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-10 DOI: 10.1016/j.microrel.2025.115651

D. Zhao, S. Letz, J. Leib, B. Eckardt

{"title":"On the validity of rainflow counting-based lifetime assessment for power electronics assembly","authors":"D. Zhao, S. Letz, J. Leib, B. Eckardt","doi":"10.1016/j.microrel.2025.115651","DOIUrl":"10.1016/j.microrel.2025.115651","url":null,"abstract":"<div><div>The lifetime assessment of power electronics based on mission profiles is increasingly applied to obtain realistic lifetime predictions while considering application-close operational scenarios. Generally, mission profile-based lifetime is calculated by individual temperature cycles disassembled from the mission profiles using specific counting methods. Among the different methods, rainflow counting (RC) method is the most common algorithmic procedure for determining damage-relevant events in power electronics. However, the conventional RC method does not consider the mechanical sequential effect and transient effect on damage caused by time-dependent material properties, especially at high temperatures during power module operation. In this paper, we investigate the validity of using the RC method for mission profile-based lifetime assessment of power modules. Through finite element (FE) modeling, we explicitly calculate both effects driven by the mission profile. For the selected mission profiles, we find that the lifetime of bond wire calculated by the FE approach shows a difference of 9 %, which cannot be sensed by the conventional RC approach. Furthermore, through a comparison between different approaches, it appears that the lifetime calculated by the RC approach is higher than the lifetime assessed by the FE approach by around 20 %. Simultaneously at the solder, the deviation between both approaches reaches around 95 %.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"168 ","pages":"Article 115651"},"PeriodicalIF":1.6,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143578646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A geometry-scalable electrothermal compact circuit model of SiC merged-PiN-Schottky diodes accounting for the snapback mechanism: Application to current surge events 考虑回吸机制的SiC合并pin - schottky二极管的几何可伸缩电热紧凑电路模型：在电流浪涌事件中的应用

IF 1.6 4区工程技术

Microelectronics Reliability Pub Date : 2025-03-10 DOI: 10.1016/j.microrel.2025.115668

A. Borghese, V. Terracciano, M. Boccarossa, A. Irace, V. d'Alessandro

引用次数: 0